Nae-In Lee

776 total citations
54 papers, 627 citations indexed

About

Nae-In Lee is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Nae-In Lee has authored 54 papers receiving a total of 627 indexed citations (citations by other indexed papers that have themselves been cited), including 54 papers in Electrical and Electronic Engineering, 11 papers in Atomic and Molecular Physics, and Optics and 9 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Nae-In Lee's work include Semiconductor materials and devices (51 papers), Advancements in Semiconductor Devices and Circuit Design (29 papers) and Ferroelectric and Negative Capacitance Devices (14 papers). Nae-In Lee is often cited by papers focused on Semiconductor materials and devices (51 papers), Advancements in Semiconductor Devices and Circuit Design (29 papers) and Ferroelectric and Negative Capacitance Devices (14 papers). Nae-In Lee collaborates with scholars based in South Korea and United States. Nae-In Lee's co-authors include Cheol Seong Hwang, Jong‐Ho Lee, Chul‐Hi Han, Jaehoo Park, Ho-Kyu Kang, Hyeong Joon Kim, Ho-Kyu Kang, Jin‐Woo Lee, Hyung‐Suk Jung and Sang‐Young Lee and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

Nae-In Lee

53 papers receiving 606 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Nae-In Lee South Korea 14 613 274 69 60 32 54 627
M.-Y. Ho United States 5 577 0.9× 331 1.2× 72 1.0× 76 1.3× 14 0.4× 6 601
R. Rai United States 11 736 1.2× 255 0.9× 116 1.7× 53 0.9× 18 0.6× 17 761
G. Pant United States 14 417 0.7× 135 0.5× 43 0.6× 32 0.5× 39 1.2× 17 428
Taeko Ikarashi Japan 13 319 0.5× 172 0.6× 99 1.4× 25 0.4× 39 1.2× 24 373
H.C. Wen United States 14 666 1.1× 182 0.7× 162 2.3× 53 0.9× 51 1.6× 43 698
Tomo Ueno Japan 11 288 0.5× 217 0.8× 61 0.9× 61 1.0× 54 1.7× 36 358
P. Y. Hung United States 10 519 0.8× 228 0.8× 76 1.1× 39 0.7× 58 1.8× 29 576
Pierre‐Yves Lesaicherre Japan 8 311 0.5× 288 1.1× 26 0.4× 74 1.2× 56 1.8× 16 370
Abdennaceur Karoui United States 12 230 0.4× 184 0.7× 84 1.2× 59 1.0× 63 2.0× 45 333
Tsunehiro Ino Japan 11 447 0.7× 152 0.6× 80 1.2× 44 0.7× 19 0.6× 27 487

Countries citing papers authored by Nae-In Lee

Since Specialization
Citations

This map shows the geographic impact of Nae-In Lee's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Nae-In Lee with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Nae-In Lee more than expected).

Fields of papers citing papers by Nae-In Lee

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Nae-In Lee. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Nae-In Lee. The network helps show where Nae-In Lee may publish in the future.

Co-authorship network of co-authors of Nae-In Lee

This figure shows the co-authorship network connecting the top 25 collaborators of Nae-In Lee. A scholar is included among the top collaborators of Nae-In Lee based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Nae-In Lee. Nae-In Lee is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Park, Jongwoo, Il-Gon Kim, Sangwoo Pae, et al.. (2014). Development of thermal neutron SER-resilient high-k/metal gate technology. 2B.4.1–2B.4.3. 6 indexed citations
2.
Kim, Woo‐Hee, et al.. (2014). Thickness and Post-annealing Effects of the Sputtered La-Capping Layer Inserted between the TiN Gate and Hf-Based Dielectrics. ACS Applied Materials & Interfaces. 6(7). 5199–5205. 2 indexed citations
3.
Song, Ji Hun, et al.. (2014). Reduction in the Interfacial Trap Density of Al2O3/GaAs Gate Stack by Adopting High Pressure Oxidation. ECS Journal of Solid State Science and Technology. 3(12). Q232–Q235. 1 indexed citations
4.
5.
Kim, Hyo Kyeom, Sang‐Young Lee, Joohwi Lee, et al.. (2012). Reduction of Charge Trapping in $\hbox{HfO}_{2}$ Film on Ge Substrates by Atomic Layer Deposition of Various Passivating Interfacial Layers. IEEE Transactions on Electron Devices. 59(9). 2350–2356. 11 indexed citations
6.
Jung, Hyung‐Suk, Sang‐Young Lee, Hyo Kyeom Kim, et al.. (2011). Impacts of Zr Composition in $\hbox{Hf}_{1-x} \hbox{Zr}_{x}\hbox{O}_{y}$ Gate Dielectrics on Their Crystallization Behavior and Bias-Temperature-Instability Characteristics. IEEE Transactions on Electron Devices. 58(7). 2094–2103. 36 indexed citations
7.
Oh, Tae-Hwan, et al.. (2010). Noble design of Si-SOH in trilayer resist process for sub-30-nm logic device. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 7639. 763927–763927. 1 indexed citations
8.
Jung, Hyung‐Suk, Jeong Hwan Kim, Joohwi Lee, et al.. (2010). Bias Temperature Instability Characteristics of n- and p-Type Field Effect Transistors Using HfO[sub 2] Gate Dielectrics and Metal Gate. Journal of The Electrochemical Society. 157(3). H355–H355. 7 indexed citations
9.
Jung, Hyung‐Suk, Hyo Kyeom Kim, Jeong Hwan Kim, et al.. (2010). Electrical and Bias Temperature Instability Characteristics of n-Type Field-Effect Transistors Using HfO[sub x]N[sub y] Gate Dielectrics. Journal of The Electrochemical Society. 157(5). G121–G121. 18 indexed citations
10.
Jung, Hyung‐Suk, Tae Joo Park, Jeong Hwan Kim, et al.. (2009). Systematic study on bias temperature instability of various high-k gate dielectrics ; HfO2, HfZrxOy and ZrO2. 971–972. 6 indexed citations
11.
Kim, Byung‐Sung, Sung-Ho Lee, Hong‐Jae Shin, & Nae-In Lee. (2007). Size tolerance of sub-resolution assist features for sub-50-nm node device. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 6520. 652027–652027. 1 indexed citations
12.
13.
Lee, Jungeun, et al.. (2005). Integration and reliability of a noble TiZr/TiZrN alloy barrier for Cu/low-k interconnects. 138–140. 2 indexed citations
14.
15.
Park, Jaehoo, Cheol Seong Hwang, Hyeong Joon Kim, et al.. (2003). Post-Annealing Effects on Fixed Charge and Slow/Fast Interface States of TiN/Al2O3/p-Si Metal–Oxide–Semiconductor Capacitor. Japanese Journal of Applied Physics. 42(Part 1, No. 3). 1222–1226. 51 indexed citations
16.
Kim, Yunseok, Jong‐Ho Lee, Nae-In Lee, et al.. (2003). Improved current performance of CMOSFETs with nitrogen incorporated HfO/sub 2/-Al/sub 2/O/sub 3/ laminate gate dielectric. 853–856. 8 indexed citations
17.
Lee, Jin‐Woo, Nae-In Lee, Hoon‐Ju Chung, & Chul‐Hi Han. (2002). Improved stability of polysilicon thin-film transistors under self-heating and high endurance EEPROM cells for systems-on-panel. 18. 265–268. 5 indexed citations
18.
Oh, Junghoon, Hoon‐Ju Chung, Nae-In Lee, & Chul‐Hi Han. (2000). A high-endurance low-temperature polysilicon thin-film transistor EEPROM cell. IEEE Electron Device Letters. 21(6). 304–306. 6 indexed citations
19.
Lee, Nae-In, Jin‐Woo Lee, Hyoung-Sub Kim, & Chul‐Hi Han. (1999). High-performance EEPROMs using N- and P-channel polysilicon thin-film transistors with electron cyclotron resonance N2O-plasma oxide. IEEE Electron Device Letters. 20(1). 15–17. 8 indexed citations
20.
Lee, Nae-In, et al.. (1994). Microstructures of Tungsten Suicide Films Deposited by CVD and by Sputtering. MRS Proceedings. 355. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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