M. V. Raymond

1.1k total citations
19 papers, 843 citations indexed

About

M. V. Raymond is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, M. V. Raymond has authored 19 papers receiving a total of 843 indexed citations (citations by other indexed papers that have themselves been cited), including 16 papers in Electrical and Electronic Engineering, 14 papers in Materials Chemistry and 5 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in M. V. Raymond's work include Ferroelectric and Piezoelectric Materials (13 papers), Semiconductor materials and devices (11 papers) and Electronic and Structural Properties of Oxides (5 papers). M. V. Raymond is often cited by papers focused on Ferroelectric and Piezoelectric Materials (13 papers), Semiconductor materials and devices (11 papers) and Electronic and Structural Properties of Oxides (5 papers). M. V. Raymond collaborates with scholars based in United States. M. V. Raymond's co-authors include D. M. Smyth, D. Dimos, Bruce A. Tuttle, W. L. Warren, J. T. Evans, Husam N. Alshareef, R. Ramesh, G. E. Pike, Robert W. Schwartz and Carl H. Mueller and has published in prestigious journals such as Applied Physics Letters, Journal of Physics and Chemistry of Solids and Journal of materials research/Pratt's guide to venture capital sources.

In The Last Decade

M. V. Raymond

19 papers receiving 812 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
M. V. Raymond United States 12 704 488 293 267 73 19 843
Yuichi Nakao Japan 10 662 0.9× 434 0.9× 303 1.0× 210 0.8× 69 0.9× 15 750
Toshiyuki Sakuma Japan 12 800 1.1× 587 1.2× 246 0.8× 142 0.5× 47 0.6× 21 870
Yoichiro Masuda Japan 13 746 1.1× 440 0.9× 379 1.3× 344 1.3× 123 1.7× 58 834
V. Bornand France 14 534 0.8× 289 0.6× 265 0.9× 237 0.9× 116 1.6× 47 617
Moon Yong Lee South Korea 12 587 0.8× 547 1.1× 162 0.6× 125 0.5× 41 0.6× 27 722
M. J. Lefevre United States 7 661 0.9× 264 0.5× 281 1.0× 340 1.3× 30 0.4× 11 722
Ken Numata Japan 14 550 0.8× 423 0.9× 217 0.7× 136 0.5× 53 0.7× 32 625
B. Jiménez Spain 18 882 1.3× 510 1.0× 400 1.4× 378 1.4× 78 1.1× 56 938
Tadashi Sekiya Japan 13 610 0.9× 391 0.8× 314 1.1× 247 0.9× 72 1.0× 25 679
Keiko Kushida Japan 14 631 0.9× 286 0.6× 425 1.5× 159 0.6× 66 0.9× 22 753

Countries citing papers authored by M. V. Raymond

Since Specialization
Citations

This map shows the geographic impact of M. V. Raymond's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. V. Raymond with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. V. Raymond more than expected).

Fields of papers citing papers by M. V. Raymond

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. V. Raymond. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. V. Raymond. The network helps show where M. V. Raymond may publish in the future.

Co-authorship network of co-authors of M. V. Raymond

This figure shows the co-authorship network connecting the top 25 collaborators of M. V. Raymond. A scholar is included among the top collaborators of M. V. Raymond based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. V. Raymond. M. V. Raymond is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

19 of 19 papers shown
1.
Milosevic, Erik, V. Kamineni, Hemant Dixit, et al.. (2018). Validity and Application of the TCR Method to MOL contactS. 95304. 36–38. 1 indexed citations
2.
Milosevic, Erik, V. Kamineni, Hemant Dixit, et al.. (2018). Validity and Application of the TCR Method to MOL contactS. 95304. 36–38. 2 indexed citations
3.
Schaeffer, J., D. C. Gilmer, C. Capasso, et al.. (2007). Application of group electronegativity concepts to the effective work functions of metal gate electrodes on high-κ gate oxides. Microelectronic Engineering. 84(9-10). 2196–2200. 33 indexed citations
4.
Schaeffer, J., S. Samavedam, D. C. Gilmer, et al.. (2002). Physical and electrical properties of metal gate electrodes on HfO2 gate dielectrics. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 21(1). 11–17. 85 indexed citations
5.
Samavedam, S., J. Schaeffer, D. C. Gilmer, et al.. (2002). Evaluation of Candidate Metals for Dual-Metal Gate CMOS with HfO2 Gate Dielectric. MRS Proceedings. 716. 4 indexed citations
6.
Schwartz, Robert W., M. T. Sebastian, & M. V. Raymond. (2000). Evaluation of LSCO Electrodes for Sensor Protection Devices. MRS Proceedings. 623. 4 indexed citations
7.
Zürcher, P., Clarence J. Tracy, Robert E. Jones, et al.. (1998). Barium Strontium Titanate Capacitors for Embedded Dram. MRS Proceedings. 541. 4 indexed citations
8.
Alshareef, Husam N., D. Dimos, Bruce A. Tuttle, & M. V. Raymond. (1997). Metallization schemes for dielectric thin film capacitors. Journal of materials research/Pratt's guide to venture capital sources. 12(2). 347–354. 27 indexed citations
9.
Dimos, D., M. V. Raymond, Robert W. Schwartz, Husam N. Alshareef, & Carl H. Mueller. (1997). Tunability and Calculation of the Dielectric Constant of Capacitor Structures with Interdigital Electrodes. Journal of Electroceramics. 1(2). 145–153. 83 indexed citations
10.
Raymond, M. V. & D. M. Smyth. (1996). Defects and charge transport in perovskite ferroelectrics. Journal of Physics and Chemistry of Solids. 57(10). 1507–1511. 219 indexed citations
11.
Raymond, M. V., Husam N. Alshareef, Bruce A. Tuttle, D. Dimos, & J. T. Evans. (1996). Rf Magnetron Sputter-Deposition of La0.5Sr0.5CoO3//Pt Composite Electrodes for Pb(Zr, Ti)O3 Thin Film Capacitors. MRS Proceedings. 433. 6 indexed citations
12.
Aggarwal, S., A. M. Dhote, R. Ramesh, et al.. (1996). Hysteresis relaxation in (Pb,La)(Zr,Ti)O3 thin film capacitors with (La,Sr)CoO3 electrodes. Applied Physics Letters. 69(17). 2540–2542. 46 indexed citations
13.
Raymond, M. V., et al.. (1996). RF magnetron sputter-deposition of La{sub 0.5}CoO{sub 3}//Pt composite electrodes for Pb(Zr,Ti)O{sub 3} thin film capacitors. University of North Texas Digital Library (University of North Texas). 1 indexed citations
14.
Alshareef, Husam N., Bruce A. Tuttle, W. L. Warren, et al.. (1996). Low temperature processing of Nb-doped Pb(Zr,Ti)O3 capacitors with La0.5Sr0.5CoO3 electrodes. Applied Physics Letters. 68(2). 272–274. 39 indexed citations
15.
Tuttle, Bruce A., Husam N. Alshareef, W. L. Warren, et al.. (1995). La0.5Sr0.5CoO3 electrode technology for Pb(Zr,Ti)O3 thin film nonvolatile memories. Microelectronic Engineering. 29(1-4). 223–230. 13 indexed citations
16.
Warren, W. L., D. Dimos, G. E. Pike, et al.. (1995). Voltage shifts and imprint in ferroelectric capacitors. Applied Physics Letters. 67(6). 866–868. 177 indexed citations
17.
Raymond, M. V. & D. M. Smyth. (1994). Defect chemistry and transport properties of Pb(Zr1/2Ti1/2)O3. Integrated ferroelectrics. 4(2). 145–154. 51 indexed citations
18.
Raymond, M. V., et al.. (1994). Degradation of ferroelectric thin films: A defect chemistry approach. Integrated ferroelectrics. 5(1). 73–78. 31 indexed citations
19.
Raymond, M. V. & D. M. Smyth. (1993). Defects and transport in Pb(Zr½Ti½)O3. Ferroelectrics. 144(1). 129–135. 17 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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