A. V. Gelatos

840 total citations
28 papers, 600 citations indexed

About

A. V. Gelatos is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, A. V. Gelatos has authored 28 papers receiving a total of 600 indexed citations (citations by other indexed papers that have themselves been cited), including 28 papers in Electrical and Electronic Engineering, 17 papers in Materials Chemistry and 6 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in A. V. Gelatos's work include Thin-Film Transistor Technologies (21 papers), Silicon Nanostructures and Photoluminescence (17 papers) and Semiconductor materials and devices (13 papers). A. V. Gelatos is often cited by papers focused on Thin-Film Transistor Technologies (21 papers), Silicon Nanostructures and Photoluminescence (17 papers) and Semiconductor materials and devices (13 papers). A. V. Gelatos collaborates with scholars based in United States. A. V. Gelatos's co-authors include J. David Cohen, Jerzy Kanicki, C. E. Michelson, J. P. Harbison, C. J. Mogab, Richard J. Marsh, M. Kottke, Ajay K. Jain, C.M. Fortmann and Thomas Unold and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

A. V. Gelatos

28 papers receiving 580 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
A. V. Gelatos United States 12 565 373 112 90 33 28 600
Mau-Phon Houng Taiwan 15 413 0.7× 267 0.7× 127 1.1× 106 1.2× 15 0.5× 49 520
D. Roan United States 14 1.1k 1.9× 417 1.1× 146 1.3× 87 1.0× 55 1.7× 20 1.1k
Dwi Wicaksana United States 6 316 0.6× 251 0.7× 59 0.5× 46 0.5× 26 0.8× 10 389
W. Kissinger Germany 13 369 0.7× 264 0.7× 139 1.2× 36 0.4× 25 0.8× 33 430
A. Piotrowska Poland 12 293 0.5× 243 0.7× 92 0.8× 171 1.9× 22 0.7× 47 433
Pengshou Xu China 11 223 0.4× 348 0.9× 61 0.5× 148 1.6× 26 0.8× 66 459
Antonio Rotondaro United States 16 927 1.6× 223 0.6× 150 1.3× 75 0.8× 46 1.4× 54 974
P. Y. Hung United States 10 519 0.9× 228 0.6× 76 0.7× 39 0.4× 17 0.5× 29 576
T. Boƫilă Romania 12 311 0.6× 323 0.9× 76 0.7× 38 0.4× 8 0.2× 37 405
L. Harmatha Slovakia 12 393 0.7× 181 0.5× 153 1.4× 46 0.5× 16 0.5× 76 495

Countries citing papers authored by A. V. Gelatos

Since Specialization
Citations

This map shows the geographic impact of A. V. Gelatos's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by A. V. Gelatos with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites A. V. Gelatos more than expected).

Fields of papers citing papers by A. V. Gelatos

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by A. V. Gelatos. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by A. V. Gelatos. The network helps show where A. V. Gelatos may publish in the future.

Co-authorship network of co-authors of A. V. Gelatos

This figure shows the co-authorship network connecting the top 25 collaborators of A. V. Gelatos. A scholar is included among the top collaborators of A. V. Gelatos based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with A. V. Gelatos. A. V. Gelatos is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Carr, Adra, C. Lavoie, H. van Meer, et al.. (2017). Highly-selective superconformai CVD Ti silicide process enabling area-enhanced contacts for next-generation CMOS architectures. T216–T217. 19 indexed citations
2.
Agrawal, Ashish, Jiarui Lin, Shashank Sharma, et al.. (2013). Barrier height reduction to 0.15eV and contact resistivity reduction to 9.1×10 −9 Ω-cm 2 using ultrathin TiO 2−x interlayer between metal and silicon. Symposium on VLSI Technology. 11 indexed citations
3.
Zhang, Amy, Tong Zhang, A. V. Gelatos, et al.. (2003). Effect of NH3 thermal treatment on an atomic layer deposited on tungsten films and formation of W–B–N. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 21(4). 1466–1471. 4 indexed citations
4.
Gelatos, A. V., Bich-Yen Nguyen, Richard J. Marsh, et al.. (1996). Copper metallization for on-chip interconnects. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 2875. 346–346. 1 indexed citations
5.
Jain, Ajay K., A. V. Gelatos, Toivo T. Kodas, et al.. (1995). Selective chemical vapor deposition of copper using (hfac) copper(I) vinyltrimethylsilane in the absence and presence of water. Thin Solid Films. 262(1-2). 52–59. 29 indexed citations
6.
Gelatos, A. V., Richard J. Marsh, M. Kottke, & C. J. Mogab. (1993). Chemical vapor deposition of copper from Cu+1 precursors in the presence of water vapor. Applied Physics Letters. 63(20). 2842–2844. 49 indexed citations
7.
Cohen, J. David, Thomas Unold, A. V. Gelatos, & C.M. Fortmann. (1992). Deep defect structure and carrier dynamics in amorphous silicon and silicon-germanium alloys determined by transient photocapacitance methods. Journal of Non-Crystalline Solids. 141. 142–154. 35 indexed citations
8.
Gelatos, A. V., et al.. (1992). The Properties of a Plasma Deposited Candidate Insulator for Future Multilevel Interconnects Technology.. MRS Proceedings. 260. 2 indexed citations
9.
10.
Godet, C., Jerzy Kanicki, & A. V. Gelatos. (1991). Transient photocapacitance and capacitance studies of interface and bulk states in metal / a-SiN1.6:H / a-Si:H / c-Si devices. Journal of Non-Crystalline Solids. 137-138. 1051–1054. 3 indexed citations
11.
Kanicki, Jerzy, et al.. (1990). Stretched exponential illumination time dependence of positive charge and spin generation in amorphous silicon nitride. Applied Physics Letters. 57(7). 698–700. 31 indexed citations
12.
Gelatos, A. V. & Jerzy Kanicki. (1990). Direct observation of the silicon nitride on amorphous silicon interface states. Applied Physics Letters. 56(10). 940–942. 13 indexed citations
13.
Gelatos, A. V., Peter Wagner, & Jerzy Kanicki. (1989). Investigation of the plasma deposited silicon dioxide on hydrogenated amorphous silicon interface by capacitance measurements. Journal of Non-Crystalline Solids. 114. 699–701. 4 indexed citations
14.
Gelatos, A. V. & Jerzy Kanicki. (1989). Investigation of the Silicon Nitride on Hydrogenated Amorphous Silicon Interface. MRS Proceedings. 149. 7 indexed citations
15.
Kanicki, Jerzy, D. Jousse, A. V. Gelatos, & M. S. Crowder. (1989). Light-induced effects in hydrogenated amorphous nitrogen-rich silicon nitride films. Journal of Non-Crystalline Solids. 114. 612–614. 10 indexed citations
16.
Gelatos, A. V., et al.. (1988). Transient photocapacitance and photocurrent studies of undoped hydrogenated amorphous silicon. Applied Physics Letters. 53(5). 403–405. 44 indexed citations
17.
Gelatos, A. V., J. David Cohen, & J. P. Harbison. (1986). Assessment of lattice relaxation effects in transitions from mobility gap states in hydrogenated amorphous silicon using transient photocapacitance techniques. Applied Physics Letters. 49(12). 722–724. 48 indexed citations
18.
Gelatos, A. V., J. David Cohen, & J. P. Harbison. (1985). Correlation of optical and thermal emission from mobility GAP states in doped hydrogenated amorphous silicon. Journal of Non-Crystalline Solids. 77-78. 291–294. 8 indexed citations
19.
Michelson, C. E., A. V. Gelatos, & J. David Cohen. (1985). Drive-level capacitance profiling: Its application to determining gap state densities in hydrogenated amorphous silicon films. Applied Physics Letters. 47(4). 412–414. 145 indexed citations
20.
Gelatos, A. V., J. David Cohen, & J. P. Harbison. (1984). Correlation of optical and thermal emission processes for bound-to-free transitions from mobility gap states in doped hydrogenerated amorphous silicon. AIP conference proceedings. 120. 16–23. 3 indexed citations

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