O. Salicio

515 total citations
28 papers, 444 citations indexed

About

O. Salicio is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, O. Salicio has authored 28 papers receiving a total of 444 indexed citations (citations by other indexed papers that have themselves been cited), including 26 papers in Electrical and Electronic Engineering, 17 papers in Materials Chemistry and 7 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in O. Salicio's work include Semiconductor materials and devices (18 papers), Ferroelectric and Negative Capacitance Devices (7 papers) and Electronic and Structural Properties of Oxides (7 papers). O. Salicio is often cited by papers focused on Semiconductor materials and devices (18 papers), Ferroelectric and Negative Capacitance Devices (7 papers) and Electronic and Structural Properties of Oxides (7 papers). O. Salicio collaborates with scholars based in Italy, France and Lithuania. O. Salicio's co-authors include Alessio Lamperti, M. Fanciulli, Claudia Wiemer, Sabina Spiga, F. Driussi, Massimo Longo, C. Vallée, L. Lamagna, A. Abrutis and Wojciech Gawełda and has published in prestigious journals such as Nano Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

O. Salicio

27 papers receiving 418 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
O. Salicio Italy 14 368 314 86 59 33 28 444
N.Z. El-Sayed Egypt 8 269 0.7× 280 0.9× 73 0.8× 50 0.8× 38 1.2× 13 390
A. GuruSampath Kumar India 10 243 0.7× 229 0.7× 88 1.0× 19 0.3× 57 1.7× 25 335
Yanina Fedorenko Belgium 12 375 1.0× 228 0.7× 35 0.4× 167 2.8× 44 1.3× 33 454
J.L. Gauffier France 12 285 0.8× 335 1.1× 119 1.4× 105 1.8× 25 0.8× 30 422
L. B. Matyushkin Russia 10 252 0.7× 232 0.7× 53 0.6× 84 1.4× 75 2.3× 50 364
Huiqiang Bao China 7 187 0.5× 272 0.9× 127 1.5× 39 0.7× 26 0.8× 11 364
H. Rinnert France 10 328 0.9× 272 0.9× 26 0.3× 80 1.4× 54 1.6× 30 398
M. Schmidt Germany 13 485 1.3× 227 0.7× 61 0.7× 104 1.8× 70 2.1× 41 566
Y.S. No South Korea 10 289 0.8× 320 1.0× 106 1.2× 25 0.4× 40 1.2× 35 400

Countries citing papers authored by O. Salicio

Since Specialization
Citations

This map shows the geographic impact of O. Salicio's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by O. Salicio with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites O. Salicio more than expected).

Fields of papers citing papers by O. Salicio

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by O. Salicio. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by O. Salicio. The network helps show where O. Salicio may publish in the future.

Co-authorship network of co-authors of O. Salicio

This figure shows the co-authorship network connecting the top 25 collaborators of O. Salicio. A scholar is included among the top collaborators of O. Salicio based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with O. Salicio. O. Salicio is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Gassilloud, R., et al.. (2019). Area selective deposition of TiO2 by intercalation of plasma etching cycles in PEALD process: A bottom up approach for the simplification of 3D integration scheme. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 37(2). 32 indexed citations
2.
Lamperti, Alessio, et al.. (2012). Multi-Layered Al2O3/HfO2/SiO2/Si3N4/SiO2Thin Dielectrics for Charge Trap Memory Applications. ECS Journal of Solid State Science and Technology. 2(1). N1–N5. 7 indexed citations
3.
Longo, Massimo, Roberto Fallica, Claudia Wiemer, et al.. (2012). Metal Organic Chemical Vapor Deposition of Phase Change Ge1Sb2Te4Nanowires. Nano Letters. 12(3). 1509–1515. 25 indexed citations
4.
Fallica, Roberto, et al.. (2012). Electronic properties of crystalline Ge1-xSbxTey thin films. Applied Physics Letters. 101(10). 6 indexed citations
5.
6.
Vangelista, S., et al.. (2011). Chemical vapor deposition growth of Fe3O4 thin films and Fe/Fe3O4 bi-layers for their integration in magnetic tunnel junctions. Thin Solid Films. 520(14). 4617–4621. 23 indexed citations
7.
Lamperti, Alessio, E. Cianci, Ugo Russo, et al.. (2011). Synthesis and characterization of DyScO films deposited on Si and Si-rich SiN by atomic layer deposition for blocking layer replacement in TANOS stack. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 29(1). 01AE03–01AE03. 7 indexed citations
8.
Wiemer, Claudia, Alessio Lamperti, L. Lamagna, et al.. (2011). Detection of the Tetragonal Phase in Atomic Layer Deposited La-Doped ZrO2 Thin Films on Germanium. Journal of The Electrochemical Society. 158(8). G194–G194. 8 indexed citations
9.
Spiga, Sabina, Ugo Russo, Alessio Lamperti, et al.. (2011). Evaluation of DyScOx as an alternative blocking dielectric in TANOS memories with Si3N4 or Si-rich SiN charge trapping layers. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 29(1). 6 indexed citations
10.
Dubourdieu, C., Isabelle Gélard, O. Salicio, et al.. (2010). Epitaxial growth of germanium on silicon using a Gd2O3/Si (111) crystalline template. HAL (Le Centre pour la Communication Scientifique Directe). 6 indexed citations
11.
Wiemer, Claudia, L. Lamagna, Michele Perego, et al.. (2010). Dielectric properties of Er−doped HfO2 (Er∼15%) grown by atomic layer deposition for high-κ gate stacks. Applied Physics Letters. 96(18). 37 indexed citations
12.
Gélard, Isabelle, et al.. (2010). Oxides heterostructures for nanoelectronics. International Journal of Nanotechnology. 7(4/5/6/7/8). 320–320. 21 indexed citations
13.
Spiga, Sabina, Ugo Russo, Alessio Lamperti, et al.. (2010). Experimental and simulation study of the program efficiency of HfO<inf>2</inf> based charge trapping memories. Institutional Research Information System (University of Udine). 408–411. 11 indexed citations
14.
Longo, Massimo, Claudia Wiemer, O. Salicio, et al.. (2010). Au-catalyzed self assembly of GeTe nanowires by MOCVD. Journal of Crystal Growth. 315(1). 152–156. 14 indexed citations
15.
Abrutis, A., Valentina Plaušinaitienė, Martynas Skapas, et al.. (2008). Chemical vapor deposition of chalcogenide materials for phase-change memories. Microelectronic Engineering. 85(12). 2338–2341. 19 indexed citations
16.
Longo, Massimo, O. Salicio, Claudia Wiemer, et al.. (2008). Growth study of GexSbyTez deposited by MOCVD under nitrogen for non-volatile memory applications. Journal of Crystal Growth. 310(23). 5053–5057. 18 indexed citations
17.
Abrutis, A., Valentina Plaušinaitienė, Martynas Skapas, et al.. (2008). Hot-Wire Chemical Vapor Deposition of Chalcogenide Materials for Phase Change Memory Applications. Chemistry of Materials. 20(11). 3557–3559. 35 indexed citations
18.
Muret, Pierre, Laurent Auvray, O. Salicio, & C. Dubourdieu. (2006). Investigation of both interface states spectrum and deep oxide states from differential isothermal transient spectroscopy. Materials Science in Semiconductor Processing. 9(6). 885–888. 2 indexed citations
19.
Lhostis, S., Y. Rozier, O. Salicio, et al.. (2004). Characterization of crystalline MOCVD SrTiO3 films on SiO2/Si(100). Microelectronics Reliability. 45(5-6). 941–944. 10 indexed citations
20.
Durand, Christophe, C. Vallée, V. Loup, et al.. (2004). Metal–insulator–metal capacitors using Y2O3 dielectric grown by pulsed-injection plasma enhanced metalorganic chemical vapor deposition. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 22(3). 655–660. 28 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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