Martin Eickhoff

9.9k total citations · 2 hit papers
240 papers, 8.1k citations indexed

About

Martin Eickhoff is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Materials Chemistry. According to data from OpenAlex, Martin Eickhoff has authored 240 papers receiving a total of 8.1k indexed citations (citations by other indexed papers that have themselves been cited), including 115 papers in Electrical and Electronic Engineering, 109 papers in Condensed Matter Physics and 93 papers in Materials Chemistry. Recurrent topics in Martin Eickhoff's work include GaN-based semiconductor devices and materials (109 papers), ZnO doping and properties (67 papers) and Ga2O3 and related materials (65 papers). Martin Eickhoff is often cited by papers focused on GaN-based semiconductor devices and materials (109 papers), ZnO doping and properties (67 papers) and Ga2O3 and related materials (65 papers). Martin Eickhoff collaborates with scholars based in Germany, Spain and France. Martin Eickhoff's co-authors include M. Stutzmann, O. Ambacher, Gerhard Müller, Gustav Steinhoff, Martin Hermann, Florian Furtmayr, L.F. Eastman, J. Schalwig, Markus Eck and C. R. Miskys and has published in prestigious journals such as Journal of the American Chemical Society, Physical Review Letters and Advanced Materials.

In The Last Decade

Martin Eickhoff

234 papers receiving 7.9k citations

Hit Papers

align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures

2002 821 citations O. Ambacher, Martin Hermann et al. profile →
Binary copper oxide semiconductors: From materials towards devices

2012 597 citations Martin Eickhoff et al. profile →

Peers

Countries citing papers authored by Martin Eickhoff

Since Specialization

Citations

This map shows the geographic impact of Martin Eickhoff's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Martin Eickhoff with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Martin Eickhoff more than expected).

Fields of papers citing papers by Martin Eickhoff

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Martin Eickhoff. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Martin Eickhoff. The network helps show where Martin Eickhoff may publish in the future.

Co-authorship network of co-authors of Martin Eickhoff

This figure shows the co-authorship network connecting the top 25 collaborators of Martin Eickhoff. A scholar is included among the top collaborators of Martin Eickhoff based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Martin Eickhoff. Martin Eickhoff is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Structural evolution and nucleation dynamics of RF sputtered Ga2O3 films on Ru(0001): The impact of deposition temperature and Ru surface morphology 2025 ·APL Materials ·(unknown), Marco Schowalter, (unknown), (unknown), Thorsten Mehrtens, (unknown), Andreas Rosenauer, Martin Eickhoff, J. Falta	0
2	Lattice parameters and elastic properties for strain analysis in κ-(InxGa1−x)2O3/κ-Ga2O3/Al2O3 heterostructures from density functional theory, x-ray diffraction, and scanning precession nanobeam electron diffraction 2025 ·Journal of Applied Physics ·Marco Schowalter, (unknown), Florian F. Krause, (unknown), (unknown), (unknown), Tim Grieb, Christoph Mahr, Thorsten Mehrtens, Martin Eickhoff, Andreas Rosenauer	0
3	Initial results of a pilot project for sub-seabed basalt storage of carbon dioxide on the Reykjanes Ridge 2024 ·SHILAP Revista de lepidopterología ·Achim Kopf, S. Bhattacharya, (unknown), (unknown), (unknown), (unknown), (unknown), Eric P. Achterberg, Wolfgang Bach, Ralf Bachmayer, (unknown), Martin Eickhoff, Mario Espósito, Tim Freudenthal, (unknown), (unknown), Lars Rüpke, (unknown), (unknown), Matthias Zabel	3
4	Electrochemical Detection of Selective Anion Transport through Subnanopores in Liquid-Crystalline Water Treatment Membranes 2024 ·The Journal of Physical Chemistry B ·(unknown), Takeshi Sakamoto, Martin Eickhoff, Takashi Kato, Motomu Tanaka	2
5	Growth, catalysis, and faceting of α-Ga2O3 and α-(InxGa1−x)2O3 on m-plane α-Al2O3 by molecular beam epitaxy 2024 ·APL Materials ·(unknown), (unknown), Marco Schowalter, (unknown), (unknown), Jonathan P. McCandless, Debdeep Jena, Andreas Rosenauer, Martin Eickhoff, Patrick Vogt	12
6	Atomic vs. sub-atomic layer deposition: impact of growth rate on the optical and structural properties of MoS₂ and WS₂ 2024 ·2D Materials ·Christian Tessarek, Tim Grieb, Florian F. Krause, Christian Petersen, (unknown), (unknown), (unknown), (unknown), S. Figge, (unknown), Thomas Schmidt, J. Falta, Andreas Rosenauer, Martin Eickhoff	2
7	Accurate and Robust Wide‐Range Luminescent Microthermometer Based on ALD‐Encapsulated Ga₂O₃:Cr DBR Microcavities 2024 ·Advanced Materials Technologies ·(unknown), (unknown), (unknown), Marco Schowalter, Andreas Rosenauer, Emilio Nogales, Bianchi Méndez, Martin Eickhoff	0
8	Origin of the spectral red-shift and polarization patterns of self-assembled InGaN nanostructures on GaN nanowires 2023 ·Nanoscale ·(unknown), Felix Nippert, Benjamin März, (unknown), Tim Grieb, (unknown), Pascal Hille, (unknown), Eser Metin Akinoglu, E. Speiser, (unknown), Jörg Schörmann, Matthias Auf der Maur, Knut Müller‐Caspary, Andreas Rosenauer, N. Esser, Martin Eickhoff, Markus R. Wagner	1
9	Indium: A surfactant for the growth of ɛ/κ-Ga2O3 by molecular beam epitaxy 2023 ·APL Materials ·(unknown), (unknown), S. Figge, Marco Schowalter, Patrick Vogt, Andreas Rosenauer, Martin Eickhoff	4
10	Growth and characterization of sputter-deposited Ga2O3-based memristive devices 2023 ·Applied Physics Letters ·(unknown), (unknown), Marco Schowalter, Thorsten Mehrtens, (unknown), Andreas Rosenauer, Martin Eickhoff, J. Falta	2
11	Enhanced epitaxial growth of Ga2O3 using an ultrathin SnO2 layer 2022 ·Journal of Applied Physics ·(unknown), (unknown), Patrick Vogt, (unknown), (unknown), Jörg Schörmann, Marcus Rohnke, Jürgen Janek, J. Falta, Martin Eickhoff	5
12	Comparing Co‐catalytic Effects of ZrO_x, SmO_x, and Pt on CO_x Methanation over Co‐based Catalysts Prepared by Double Flame Spray Pyrolysis 2021 ·ChemCatChem ·(unknown), (unknown), Suman Pokhrel, Marco Schowalter, Christian Tessarek, Andreas Rosenauer, Martin Eickhoff, Marcus Bäumer, Lutz Mädler	19
13	Influence of the atom source operating parameters on the structural and optical properties of InxGa1−xN nanowires grown by plasma-assisted molecular beam epitaxy 2018 ·Journal of Applied Physics ·Pascal Hille, Felix Walther, Philip Klement, (unknown), Jörg Schörmann, (unknown), Slobodan Mitic, Nils W. Rosemann, Sangam Chatterjee, Andreas Beyer, Katharina Gries, Kerstin Volz, Martin Eickhoff	2
14	Effects of the Fermi level energy on the adsorption of O ₂ to monolayer MoS ₂ 2018 ·2D Materials ·Philip Klement, (unknown), Sangam Chatterjee, Tim O. Wehling, Martin Eickhoff	13
15	Optical emission of GaN/AlN quantum-wires – the role of charge transfer from a nanowire template 2018 ·Nanoscale ·(unknown), (unknown), (unknown), Gordon Callsen, Pascal Hille, Jörg Schörmann, Markus R. Wagner, A. Schliwa, Sara Martí‐Sánchez, Jordi Arbiol, A. Hoffmann, Martin Eickhoff	11
16	Optical Analysis of Oxygen Self‐Diffusion in Ultrathin CeO₂ Layers at Low Temperatures 2018 ·Advanced Energy Materials ·(unknown), Pascal Hille, Sara Martí‐Sánchez, Marı́a de la Mata, Mariona Coll, Jordi Arbiol, Martin Eickhoff	5
17	Suppression of the quantum-confined Stark effect in polar nitride heterostructures 2018 ·Communications Physics ·(unknown), Gerald Hönig, (unknown), Pascal Hille, Tim Grieb, (unknown), J. Teubert, Jörg Schörmann, Markus R. Wagner, Andreas Rosenauer, Martin Eickhoff, Axel Hoffmann, Gordon Callsen	18
18	Passivation layers for nanostructured photoanodes: ultra-thin oxides on InGaN nanowires 2017 ·Journal of Materials Chemistry A ·(unknown), Pascal Hille, Jörg Schörmann, A. J. Frank, Christian Reitz, Sara Martí‐Sánchez, Marı́a de la Mata, Mariona Coll, Jordi Arbiol, Roland Marschall, Martin Eickhoff	29
19	Structural and electronic properties of GaN nanowires with embedded InxGa1−xN nanodisks 2015 ·Journal of Applied Physics ·Joseph Kioseoglou, (unknown), Th. Kehagias, Ph. Komninou, Th. Karakostas, C. D. Latham, M. J. Rayson, P. R. Briddon, Martin Eickhoff	10
20	Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures – Part B: Sensor applications 2003 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Martin Eickhoff, J. Schalwig, Gustav Steinhoff, (unknown), L. Görgens, R. Neuberger, Martin Hermann, Barbara Baur, Gerhard Müller, O. Ambacher, M. Stutzmann	111

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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