Martin Eickhoff

9.9k total citations · 2 hit papers
240 papers, 8.1k citations indexed

About

Martin Eickhoff is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Materials Chemistry. According to data from OpenAlex, Martin Eickhoff has authored 240 papers receiving a total of 8.1k indexed citations (citations by other indexed papers that have themselves been cited), including 115 papers in Electrical and Electronic Engineering, 109 papers in Condensed Matter Physics and 93 papers in Materials Chemistry. Recurrent topics in Martin Eickhoff's work include GaN-based semiconductor devices and materials (109 papers), ZnO doping and properties (67 papers) and Ga2O3 and related materials (65 papers). Martin Eickhoff is often cited by papers focused on GaN-based semiconductor devices and materials (109 papers), ZnO doping and properties (67 papers) and Ga2O3 and related materials (65 papers). Martin Eickhoff collaborates with scholars based in Germany, Spain and France. Martin Eickhoff's co-authors include M. Stutzmann, O. Ambacher, Gerhard Müller, Gustav Steinhoff, Martin Hermann, Florian Furtmayr, L.F. Eastman, J. Schalwig, Markus Eck and C. R. Miskys and has published in prestigious journals such as Journal of the American Chemical Society, Physical Review Letters and Advanced Materials.

In The Last Decade

Martin Eickhoff

234 papers receiving 7.9k citations

Hit Papers

Pyroelectric properties o... 2002 2026 2010 2018 2002 2012 250 500 750
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures
    2002 821 citations O. Ambacher, Martin Hermann et al. profile →
  2. Binary copper oxide semiconductors: From materials towards devices
    2012 597 citations Martin Eickhoff et al. profile →

Author Peers

Peers are selected by citation overlap in the author's most active subfields. citations · hero ref

Author Last Decade Papers Cites
Martin Eickhoff 3.8k 3.6k 3.5k 2.1k 2.1k 240 8.1k
Rong Zhang 3.8k 1.0× 5.0k 1.4× 2.6k 0.7× 1.5k 0.7× 3.1k 1.5× 539 8.3k
Bin Liu 3.3k 0.9× 3.2k 0.9× 2.1k 0.6× 1.6k 0.7× 2.1k 1.0× 408 6.2k
Shoou‐Jinn Chang 8.3k 2.2× 8.2k 2.3× 4.6k 1.3× 2.9k 1.4× 4.6k 2.2× 726 13.8k
Yasuo Koide 6.6k 1.8× 7.5k 2.1× 2.5k 0.7× 1.9k 0.9× 3.4k 1.6× 322 11.2k
Shangjr Gwo 3.4k 0.9× 3.9k 1.1× 2.0k 0.6× 3.8k 1.8× 3.7k 1.8× 253 8.8k
Meiyong Liao 8.3k 2.2× 10.8k 3.0× 1.2k 0.4× 2.9k 1.4× 5.0k 2.4× 271 14.5k
A. Waag 7.4k 2.0× 7.9k 2.2× 3.6k 1.0× 2.1k 1.0× 3.6k 1.7× 639 14.2k
V. Cimalla 3.3k 0.9× 2.8k 0.8× 1.9k 0.6× 1.5k 0.7× 1.3k 0.6× 263 5.5k
I. M. Tiginyanu 4.5k 1.2× 5.3k 1.5× 749 0.2× 2.1k 1.0× 1.7k 0.8× 363 7.2k
Edward T. Yu 6.7k 1.8× 4.3k 1.2× 2.8k 0.8× 3.6k 1.7× 2.4k 1.1× 258 10.8k

Countries citing papers authored by Martin Eickhoff

Since Specialization
Citations

This map shows the geographic impact of Martin Eickhoff's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Martin Eickhoff with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Martin Eickhoff more than expected).

Fields of papers citing papers by Martin Eickhoff

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Martin Eickhoff. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Martin Eickhoff. The network helps show where Martin Eickhoff may publish in the future.

Co-authorship network of co-authors of Martin Eickhoff

This figure shows the co-authorship network connecting the top 25 collaborators of Martin Eickhoff. A scholar is included among the top collaborators of Martin Eickhoff based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Martin Eickhoff. Martin Eickhoff is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
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Kopf, Achim, S. Bhattacharya, Eric P. Achterberg, et al.. (2024). Initial results of a pilot project for sub-seabed basalt storage of carbon dioxide on the Reykjanes Ridge. SHILAP Revista de lepidopterología. 13. 100265–100265. 3 indexed citations
4.
Sakamoto, Takeshi, et al.. (2024). Electrochemical Detection of Selective Anion Transport through Subnanopores in Liquid-Crystalline Water Treatment Membranes. The Journal of Physical Chemistry B. 128(18). 4537–4543. 2 indexed citations
5.
Tessarek, Christian, Tim Grieb, Florian F. Krause, et al.. (2024). Atomic vs. sub-atomic layer deposition: impact of growth rate on the optical and structural properties of MoS2 and WS2. 2D Materials. 11(2). 25031–25031. 2 indexed citations
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Schowalter, Marco, Jonathan P. McCandless, Debdeep Jena, et al.. (2024). Growth, catalysis, and faceting of α-Ga2O3 and α-(InxGa1−x)2O3 on m-plane α-Al2O3 by molecular beam epitaxy. APL Materials. 12(1). 12 indexed citations
8.
Schowalter, Marco, et al.. (2023). Growth and characterization of sputter-deposited Ga2O3-based memristive devices. Applied Physics Letters. 123(21). 2 indexed citations
9.
Figge, S., et al.. (2023). Indium: A surfactant for the growth of ɛ/κ-Ga2O3 by molecular beam epitaxy. APL Materials. 11(9). 4 indexed citations
10.
Nippert, Felix, Benjamin März, Tim Grieb, et al.. (2023). Origin of the spectral red-shift and polarization patterns of self-assembled InGaN nanostructures on GaN nanowires. Nanoscale. 15(15). 7077–7085. 1 indexed citations
11.
Pokhrel, Suman, Marco Schowalter, Christian Tessarek, et al.. (2021). Comparing Co‐catalytic Effects of ZrOx, SmOx, and Pt on COx Methanation over Co‐based Catalysts Prepared by Double Flame Spray Pyrolysis. ChemCatChem. 13(12). 2815–2831. 19 indexed citations
12.
Hille, Pascal, et al.. (2021). Time-resolved cathodoluminescence investigations of AlN:Ge/GaN nanowire structures. Nano Express. 2(3). 34001–34001. 4 indexed citations
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Hille, Pascal, Felix Walther, Philip Klement, et al.. (2018). Influence of the atom source operating parameters on the structural and optical properties of InxGa1−xN nanowires grown by plasma-assisted molecular beam epitaxy. Journal of Applied Physics. 124(16). 2 indexed citations
14.
Klement, Philip, et al.. (2018). Effects of the Fermi level energy on the adsorption of O 2 to monolayer MoS 2. 2D Materials. 5(4). 45025–45025. 13 indexed citations
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Hönig, Gerald, Pascal Hille, Tim Grieb, et al.. (2018). Suppression of the quantum-confined Stark effect in polar nitride heterostructures. Communications Physics. 1(1). 18 indexed citations
16.
Callsen, Gordon, Pascal Hille, Jörg Schörmann, et al.. (2018). Optical emission of GaN/AlN quantum-wires – the role of charge transfer from a nanowire template. Nanoscale. 10(12). 5591–5598. 11 indexed citations
17.
Hille, Pascal, Sara Martí‐Sánchez, Marı́a de la Mata, et al.. (2018). Optical Analysis of Oxygen Self‐Diffusion in Ultrathin CeO2 Layers at Low Temperatures. Advanced Energy Materials. 8(29). 5 indexed citations
18.
Hille, Pascal, Jörg Schörmann, A. J. Frank, et al.. (2017). Passivation layers for nanostructured photoanodes: ultra-thin oxides on InGaN nanowires. Journal of Materials Chemistry A. 6(2). 565–573. 29 indexed citations
19.
Kioseoglou, Joseph, Th. Kehagias, Ph. Komninou, et al.. (2015). Structural and electronic properties of GaN nanowires with embedded InxGa1−xN nanodisks. Journal of Applied Physics. 118(3). 10 indexed citations
20.
Eickhoff, Martin, J. Schalwig, Gustav Steinhoff, et al.. (2003). Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures – Part B: Sensor applications. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 1908–1918. 111 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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