Y. Bogumilowicz

1.2k citations

37 papers · 753 · h-index 16

Impact in

Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices
Electrical and Electronic Engineering top 5%
- Photonic and Optical Devices
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Thin-Film Transistor Technologies
- Semiconductor Lasers and Optical Devices

Papers in

Electrical and Electronic Engineering 34
- Semiconductor materials and devices 16
- Advancements in Semiconductor Devices and Circuit Design 13
- Thin-Film Transistor Technologies 9
- Photonic and Optical Devices 6
- Semiconductor Lasers and Optical Devices 4
- Silicon and Solar Cell Technologies 4
Biomedical Engineering 20
- Nanowire Synthesis and Applications 16

Co-authors: Jean‐Michel Hartmann (20 shared papers)T. Billon (9 shared papers)G. Rolland (9 shared papers)P. Holliger (4 shared papers)M. Martin (8 shared papers)F. Bassani (7 shared papers)T. Baron (8 shared papers)J.F. Damlencourt (1 shared paper)
Journals: Journal of Crystal Growth (7 papers)Semiconductor Science and Technology (4 papers)Applied Physics Letters (3 papers)Thin Solid Films (3 papers)Materials Science and Engineering B (3 papers)
Partner nations: France United States Switzerland

In The Last Decade

Y. Bogumilowicz

37 papers receiving 724 citations

Peers

Countries citing papers authored by Y. Bogumilowicz

Since Specialization

Citations

This map shows the geographic impact of Y. Bogumilowicz's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Y. Bogumilowicz with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Y. Bogumilowicz more than expected).

Fields of papers citing papers by Y. Bogumilowicz

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Y. Bogumilowicz. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Y. Bogumilowicz. The network helps show where Y. Bogumilowicz may publish in the future.

Co-authors

The 25 scholars most cited alongside Y. Bogumilowicz, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Y. Bogumilowicz Line = papers co-authored together Y. Bogumilowicz links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 37 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Reduced pressure-chemical vapor deposition of intrinsic and doped Ge layers on Si(001) for microelectronics and optoelectronics purposes Journal of Crystal Growth ·Jean‐Michel Hartmann, J.F. Damlencourt, Y. Bogumilowicz, P. Holliger, G. Rolland, T. Billon	2004	115
2	Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility APL Materials ·Reynald Alcotte, M. Martin, J. Moeyaert, R. Cipro, Sylvain David, F. Bassani, F. Ducroquet, Y. Bogumilowicz, E. Sánchez, Z. Ye, Xinyu Bao, Jean-Baptiste Pin, T. Baron	2016	100
3	Chemical vapour etching of Si, SiGe and Ge with HCl; applications to the formation of thin relaxed SiGe buffers and to the revelation of threading dislocations Semiconductor Science and Technology ·Y. Bogumilowicz, Jean‐Michel Hartmann, R. Truche, Y. Campidelli, G. Rolland, T. Billon	2004	71
4	High-performance waveguide-integrated germanium PIN photodiodes for optical communication applications [Invited] Photonics Research ·Léopold Virot, Laurent Vivien, Jean-Marc Fédéli, Y. Bogumilowicz, Jean-Michel Hartmann, F. Bœuf, P. Crozat, Delphine Marris‐Morini, Éric Cassan	2013	47
5	Toward the III–V/Si co-integration by controlling the biatomic steps on hydrogenated Si(001) Applied Physics Letters ·M. Martin, Damien Caliste, R. Cipro, Reynald Alcotte, J. Moeyaert, Sylvain David, F. Bassani, Tiphaine Cerba, Y. Bogumilowicz, E. Sánchez, Z. Ye, Xinyu Bao, Jean-Baptiste Pin, T. Baron, Pascal Pochet	2016	39
6	Low defect InGaAs quantum well selectively grown by metal organic chemical vapor deposition on Si(100) 300 mm wafers for next generation non planar devices Applied Physics Letters ·R. Cipro, T. Baron, M. Martin, J. Moeyaert, Sylvain David, Viktoriia Gorbenko, F. Bassani, Y. Bogumilowicz, Jean‐Paul Barnes, N. Rochat, V. Loup, C. Vizioz, N. Allouti, Nicolas Chauvin, Xinyu Bao, Z. Ye, Jean-Baptiste Pin, E. Sánchez	2014	39
7	High germanium content SiGe virtual substrates grown at high temperatures Journal of Crystal Growth ·Y. Bogumilowicz, Jean‐Michel Hartmann, F. Laugier, G. Rolland, T. Billon, N. Cherkashin, A. Claverie	2005	38
8	Reduced pressure chemical vapour deposition of SiGe virtual substrates for high mobility devices Semiconductor Science and Technology ·Jean‐Michel Hartmann, Y. Bogumilowicz, P. Holliger, F. Laugier, R. Truche, G. Rolland, M.N. Séméria, V. Renard, E. B. Olshanetsky, O. Estibals, Z. D. Kvon, J.C. Portal, Lee Wen Sheng Vincent, F. Cristiano, A. Claverie	2003	38
9	Threading dislocations in GaAs epitaxial layers on various thickness Ge buffers on 300 mm Si substrates Journal of Crystal Growth ·Y. Bogumilowicz, J. M. Hartmann, N. Rochat, A. Salaün, M. Martin, F. Bassani, T. Baron, Sylvain David, Xinyu Bao, E. Sánchez	2016	24
10	Anti-phase boundaries–Free GaAs epilayers on “quasi-nominal” Ge-buffered silicon substrates Applied Physics Letters ·Y. Bogumilowicz, Jean‐Michel Hartmann, R. Cipro, Reynald Alcotte, M. Martin, F. Bassani, J. Moeyaert, T. Baron, Jean-Baptiste Pin, Xinyu Bao, Z. Ye, E. Sánchez	2015	23
11	High-temperature growth of very high germanium content SiGe virtual substrates Journal of Crystal Growth ·Y. Bogumilowicz, Jean‐Michel Hartmann, C. Di Nardo, P. Holliger, Anne‐Marie Papon, G. Rolland, T. Billon	2006	23
12	SiGe high-temperature growth kinetics in reduced pressure-chemical vapor deposition Journal of Crystal Growth ·Y. Bogumilowicz, Jean‐Michel Hartmann, G. Rolland, T. Billon	2004	19
13	Anti phase boundary free GaSb layer grown on 300 mm (001)-Si substrate by metal organic chemical vapor deposition Thin Solid Films ·Tiphaine Cerba, M. Martin, J. Moeyaert, S. David, Jean‐Luc Rouvière, L. Cerutti, Reynald Alcotte, Jean‐Baptiste Rodriguez, M. Bawedin, H. Boutry, F. Bassani, Y. Bogumilowicz, Patrice Gergaud, E. Tournié, T. Baron	2017	19
14	Reduced pressure–chemical vapor deposition of high Ge content Si1−xGex and high C content Si1−yCy layers for advanced metal oxide semiconductor transistors Journal of Crystal Growth ·Jean‐Michel Hartmann, Y. Bogumilowicz, F. Andrieu, P. Holliger, G. Rolland, T. Billon	2005	18
15	Selective chemical vapour etching of Si_1−xGe_x versus Si with gaseous HCl Semiconductor Science and Technology ·Y. Bogumilowicz, Jean‐Michel Hartmann, J M Fabri, T. Billon	2006	15
16	SiGe virtual substrates growth up to 50% Ge concentration for Si/Ge dual channel epitaxy Materials Science and Engineering B ·Y. Bogumilowicz, Jean‐Michel Hartmann, N. Cherkashin, A. Claverie, G. Rolland, T. Billon	2005	15
17	Reduced Pressure–Chemical Vapour Deposition of Si/SiGe heterostructures for nanoelectronics Materials Science and Engineering B ·Jean‐Michel Hartmann, F. Andrieu, D. Lafond, T. Ernst, Y. Bogumilowicz, V. Delaye, O. Weber, D. Rouchon, A.-M. Papon, N. Cherkashin	2008	14
18	Quantitative strain and stress measurements in Ge/Si dual channels grown on a Si0.5Ge0.5 virtual substrate Materials Science and Engineering B ·N. Cherkashin, Martin Hÿtch, E. Snoeck, A. Claverie, Jean‐Michel Hartmann, Y. Bogumilowicz	2005	13
19	Quantitative local strain measurements in compressive strained Ge/tensile strained Si bi-layers grown on top of relaxed Si0.5Ge0.5 virtual substrates Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·N. Cherkashin, Martin Hÿtch, E. Snoeck, F. Hüe, Jean‐Michel Hartmann, Y. Bogumilowicz, A. Claverie	2006	12
20	Reduced-pressure chemical vapor deposition of boron-doped Si and Ge layers Thin Solid Films ·Y. Bogumilowicz, Jean‐Michel Hartmann	2013	10

About Y. Bogumilowicz

Y. Bogumilowicz is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry and Surfaces, Coatings and Films, having authored 37 papers that have together received 753 indexed citations. Recurring topics across this work include Nanowire Synthesis and Applications (16 papers), Semiconductor materials and devices (16 papers), Semiconductor Quantum Structures and Devices (15 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers), Thin-Film Transistor Technologies (9 papers), Photonic and Optical Devices (6 papers), Semiconductor Lasers and Optical Devices (4 papers) and Silicon and Solar Cell Technologies (4 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (401 citations), Electrical and Electronic Engineering (690 citations), Structural Biology (10 citations), Biomedical Engineering (211 citations) and Surfaces, Coatings and Films (22 citations). Y. Bogumilowicz has collaborated with scholars based in France, United States and Switzerland. Frequent co-authors include Jean‐Michel Hartmann, T. Billon, G. Rolland, P. Holliger, M. Martin, F. Bassani, T. Baron, J.F. Damlencourt, E. Sánchez and Xinyu Bao. Their work appears in journals such as Journal of Crystal Growth, Semiconductor Science and Technology, Applied Physics Letters, Thin Solid Films and Materials Science and Engineering B.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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