Y. Bogumilowicz

1.2k citations

37 papers · 753 indexed · h-index 16

Impact in

Atomic and Molecular Physics, and Optics top 5%
- Semiconductor Quantum Structures and Devices
Electrical and Electronic Engineering top 5%
- Photonic and Optical Devices
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Thin-Film Transistor Technologies
- Semiconductor Lasers and Optical Devices

Papers in

Atomic and Molecular Physics, and Optics 19
- Semiconductor Quantum Structures and Devices 15
Electrical and Electronic Engineering 34
- Semiconductor materials and devices 16
- Advancements in Semiconductor Devices and Circuit Design 13
- Thin-Film Transistor Technologies 9
- Photonic and Optical Devices 6
- Semiconductor Lasers and Optical Devices 4
- Silicon and Solar Cell Technologies 4

Co-authors: Jean‐Michel Hartmann T. Billon G. Rolland P. Holliger M. Martin F. Bassani T. Baron J.F. Damlencourt
Journals: Journal of Crystal Growth (7 papers)Semiconductor Science and Technology (4 papers)Applied Physics Letters (3 papers)Thin Solid Films (3 papers)Materials Science and Engineering B (3 papers)
Partner nations: France United States Switzerland

In The Last Decade

Y. Bogumilowicz

37 papers receiving 724 citations

Peers

Countries citing papers authored by Y. Bogumilowicz

Since Specialization

Citations

This map shows the geographic impact of Y. Bogumilowicz's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Y. Bogumilowicz with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Y. Bogumilowicz more than expected).

Fields of papers citing papers by Y. Bogumilowicz

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Y. Bogumilowicz. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Y. Bogumilowicz. The network helps show where Y. Bogumilowicz may publish in the future.

Co-authors

The 25 scholars most cited alongside Y. Bogumilowicz, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Y. Bogumilowicz Line = papers co-authored together Y. Bogumilowicz links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Heteroepitaxy of GaAs on Ge buffered silicon substrates: Nucleation and crystalline defects Journal of Crystal Growth ·Y. Bogumilowicz, J. M. Hartmann, M. Martin, A.-M. Papon, D. Muyard, Zineb Saghi, Sylvain David, T. Baron	2025	1
2	Evaluation of Crystal Quality and Dopant Activation of Smart Cut<sup>TM</sup> - Transferred 4H-SiC Thin Film Materials science forum ·Guillaume Gelineau, J. Widiez, E. Rolland, Krenema Vladimirova, Alexandre Moulin, Vladimir Prudkovskiy, Nicolas Troutot, Patrice Gergaud, D. Mariolle, S. Barbet, Vincent Amalbert, G. Lapertot, Karine Mony, Séverin Rouchier, R. Boulet, Guillaume Berre, W. Schwarzenbach, Y. Bogumilowicz	2023	2
3	SiGe nano-heteroepitaxy on Si and SiGe nano-pillars Nanotechnology ·Marouane Mastari, Matthew Charles, Y. Bogumilowicz, Quang Minh Thai, Patricia Pimenta‐Barros, Maxime Argoud, Anne‐Marie Papon, Patrice Gergaud, Didier Landru, Y Kim, Jean-Michel Hartmann	2018	5
4	Nano-Heteroepitaxy: An Investigation of SiGe Nano-Pillars Coalescence ECS Transactions ·Marouane Mastari, Matthew Charles, Y. Bogumilowicz, Patricia Pimenta‐Barros, Maxime Argoud, Raluca Tiron, Anne‐Marie Papon, D. Muyard, Nicolas Chevalier, Didier Landru, Youngpil Kim, Jean‐Michel Hartmann	2018	1
5	Toward the III–V/Si co-integration by controlling the biatomic steps on hydrogenated Si(001) Applied Physics Letters ·M. Martin, Damien Caliste, R. Cipro, Reynald Alcotte, J. Moeyaert, Sylvain David, F. Bassani, Tiphaine Cerba, Y. Bogumilowicz, E. Sánchez, Z. Ye, Xinyu Bao, Jean-Baptiste Pin, T. Baron, Pascal Pochet	2016	39
6	Threading dislocations in GaAs epitaxial layers on various thickness Ge buffers on 300 mm Si substrates Journal of Crystal Growth ·Y. Bogumilowicz, J. M. Hartmann, N. Rochat, A. Salaün, M. Martin, F. Bassani, T. Baron, Sylvain David, Xinyu Bao, E. Sánchez	2016	24
7	Anti-phase boundaries–Free GaAs epilayers on “quasi-nominal” Ge-buffered silicon substrates Applied Physics Letters ·Y. Bogumilowicz, Jean‐Michel Hartmann, R. Cipro, Reynald Alcotte, M. Martin, F. Bassani, J. Moeyaert, T. Baron, Jean-Baptiste Pin, Xinyu Bao, Z. Ye, E. Sánchez	2015	23
8	Low defect InGaAs quantum well selectively grown by metal organic chemical vapor deposition on Si(100) 300 mm wafers for next generation non planar devices Applied Physics Letters ·R. Cipro, T. Baron, M. Martin, J. Moeyaert, Sylvain David, Viktoriia Gorbenko, F. Bassani, Y. Bogumilowicz, Jean‐Paul Barnes, N. Rochat, V. Loup, C. Vizioz, N. Allouti, Nicolas Chauvin, Xinyu Bao, Z. Ye, Jean-Baptiste Pin, E. Sánchez	2014	39
9	Realization and characterization of thin single crystal Ge films on sapphire Semiconductor Science and Technology ·Y. Bogumilowicz, Alexandra Abbadie, V. Klinger, L. Benaissa, Patrice Gergaud, D. Rouchon, Cécile Maurois, Christophe Lecouvey, Nils Blanc, Cédric Charles-Alfred, A. Drouin, B. Ghyselen, A. Wekkeli, Frank Dimroth, V. Carron	2013	5
10	Reduced-pressure chemical vapor deposition of boron-doped Si and Ge layers Thin Solid Films ·Y. Bogumilowicz, Jean‐Michel Hartmann	2013	10
11	Splitting kinetics of Si0.8Ge0.2 layers implanted with H or sequentially with He and H Journal of Applied Physics ·P. Nguyen, K.K. Bourdelle, C. Aulnette, F. Lallement, N. Daix, Nicolas Daval, Ian Cayrefourcq, F. Letertre, C. Mazuré, Y. Bogumilowicz, A. Tauzin, C. Deguet, N. Cherkashin, A. Claverie	2008	4
12	Laser Scattering: a Fast, Sensitive, In-Line Technique for Advanced Process Development and Monitoring AIP conference proceedings ·Emmanuel Nolot, Brice Arrazat, S. Favier, Yannick Borde, J.-F. Damlencourt, B. Vincent, O. Kermarrec, V. Carron, F. Nemouchi, P. Vandelle, Y. Bogumilowicz, Adrien Danel, David G. Seiler, Alain C. Diebold, Robert McDonald, C. Michael Garner, Daniel Herr, Rajinder P. Khosla, Erik M. Secula	2007	9
13	Selective chemical vapour etching of Si_1−xGe_x versus Si with gaseous HCl Semiconductor Science and Technology ·Y. Bogumilowicz, Jean‐Michel Hartmann, J M Fabri, T. Billon	2006	15
14	Performance and physics of sub-50nm strained Si on Si1−xGex-on-insulator (SGOI) nMOSFETs Solid-State Electronics ·F. Andrieu, T. Ernst, O. Faynot, O. Rozeau, Y. Bogumilowicz, Jean‐Michel Hartmann, L. Brévard, A. Toffoli, D. Lafond, B. Ghyselen, Frank Fournel, G. Ghibaudo, S. Deleonibus	2006	2
15	Highly-Strained Silicon-On-Insulator Development ECS Transactions ·T. Akatsu, Jean‐Michel Hartmann, C. Aulnette, Yves-Matthieu Le Vaillant, D. Rouchon, Alexandra Abbadie, Y. Bogumilowicz, Lionel Portigliatti, Cyrille Colnat, Nicolas Boudou, F. Lallement, Fanny Triolet, Christophe Figuet, Muriel Martinez, P. Nguyen, Cécile Delattre, Kira Tsyganenko, Cécile Berne, F. Allibert, C. Deguet	2006	7
16	High germanium content SiGe virtual substrates grown at high temperatures Journal of Crystal Growth ·Y. Bogumilowicz, Jean‐Michel Hartmann, F. Laugier, G. Rolland, T. Billon, N. Cherkashin, A. Claverie	2005	38
17	Quantitative strain and stress measurements in Ge/Si dual channels grown on a Si0.5Ge0.5 virtual substrate Materials Science and Engineering B ·N. Cherkashin, Martin Hÿtch, E. Snoeck, A. Claverie, Jean‐Michel Hartmann, Y. Bogumilowicz	2005	13
18	Reduced pressure–chemical vapor deposition of high Ge content Si1−xGex and high C content Si1−yCy layers for advanced metal oxide semiconductor transistors Journal of Crystal Growth ·Jean‐Michel Hartmann, Y. Bogumilowicz, F. Andrieu, P. Holliger, G. Rolland, T. Billon	2005	18
19	Impact of the Growth Parameters on the Structural Properties of Si<sub>0.8</sub>Ge<sub>0.2</sub> Virtual Substrates Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena ·Y. Bogumilowicz, Jean‐Michel Hartmann, F. Laugier, G. Rolland, T. Billon	2005	5
20	SiGe high-temperature growth kinetics in reduced pressure-chemical vapor deposition Journal of Crystal Growth ·Y. Bogumilowicz, Jean‐Michel Hartmann, G. Rolland, T. Billon	2004	19

About Y. Bogumilowicz

Y. Bogumilowicz is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Biomedical Engineering, Surfaces, Coatings and Films and Industrial and Manufacturing Engineering, having authored 37 papers that have together received 753 indexed citations. Recurring topics across this work include Nanowire Synthesis and Applications (16 papers), Semiconductor materials and devices (16 papers), Semiconductor Quantum Structures and Devices (15 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers), Thin-Film Transistor Technologies (9 papers), Photonic and Optical Devices (6 papers), Semiconductor Lasers and Optical Devices (4 papers) and Silicon and Solar Cell Technologies (4 papers). The work is most often cited by research in Atomic and Molecular Physics, and Optics (401 citations), Electrical and Electronic Engineering (690 citations), Structural Biology (10 citations), Biomedical Engineering (211 citations) and Surfaces, Coatings and Films (22 citations). Y. Bogumilowicz has collaborated with scholars based in France, United States and Switzerland. Frequent co-authors include Jean‐Michel Hartmann, T. Billon, G. Rolland, P. Holliger, M. Martin, F. Bassani, T. Baron, J.F. Damlencourt, E. Sánchez and Xinyu Bao. Their work appears in journals such as Journal of Crystal Growth, Semiconductor Science and Technology, Applied Physics Letters, Thin Solid Films and Materials Science and Engineering B.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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