C. Vallée

11.9k total citations
133 papers, 2.9k citations indexed

About

C. Vallée is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, C. Vallée has authored 133 papers receiving a total of 2.9k indexed citations (citations by other indexed papers that have themselves been cited), including 99 papers in Electrical and Electronic Engineering, 60 papers in Materials Chemistry and 22 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in C. Vallée's work include Semiconductor materials and devices (70 papers), Ferroelectric and Negative Capacitance Devices (32 papers) and Advanced Memory and Neural Computing (31 papers). C. Vallée is often cited by papers focused on Semiconductor materials and devices (70 papers), Ferroelectric and Negative Capacitance Devices (32 papers) and Advanced Memory and Neural Computing (31 papers). C. Vallée collaborates with scholars based in France, Germany and Tunisia. C. Vallée's co-authors include P. Gonon, A. Goullet, A. Granier, G. Turban, Thomas Höhne, F. El Kamel, Pierre Noé, Jean‐Yves Raty, F. Hippert and F. Fillot and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Chemistry of Materials.

In The Last Decade

C. Vallée

129 papers receiving 2.8k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
C. Vallée France 30 2.1k 1.5k 452 399 351 133 2.9k
Bernd Szyszka Germany 28 1.9k 0.9× 2.0k 1.4× 224 0.5× 377 0.9× 554 1.6× 105 2.7k
Geun Young Yeom South Korea 27 2.1k 1.0× 1.6k 1.1× 583 1.3× 424 1.1× 564 1.6× 235 3.0k
Tansel Karabacak United States 34 1.4k 0.7× 1.2k 0.9× 636 1.4× 506 1.3× 551 1.6× 156 3.2k
Jeon G. Han South Korea 28 1.5k 0.7× 1.9k 1.3× 418 0.9× 283 0.7× 1.1k 3.1× 185 2.8k
C.R.M. Grovenor United Kingdom 22 960 0.5× 1.1k 0.7× 555 1.2× 422 1.1× 429 1.2× 75 2.5k
C. M. Gilmore United States 18 2.1k 1.0× 2.3k 1.6× 621 1.4× 498 1.2× 285 0.8× 59 3.2k
Rolf E. Hummel United States 28 1.4k 0.7× 1.4k 1.0× 608 1.3× 695 1.7× 278 0.8× 130 2.6k
Rebecca Cheung United Kingdom 28 1.6k 0.8× 971 0.7× 1.1k 2.5× 291 0.7× 320 0.9× 178 2.8k
S. Mohan India 24 1.1k 0.5× 1.1k 0.8× 236 0.5× 294 0.7× 436 1.2× 129 1.9k
Daniel Franta Czechia 25 955 0.5× 828 0.6× 553 1.2× 229 0.6× 325 0.9× 138 2.1k

Countries citing papers authored by C. Vallée

Since Specialization
Citations

This map shows the geographic impact of C. Vallée's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Vallée with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Vallée more than expected).

Fields of papers citing papers by C. Vallée

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Vallée. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Vallée. The network helps show where C. Vallée may publish in the future.

Co-authorship network of co-authors of C. Vallée

This figure shows the co-authorship network connecting the top 25 collaborators of C. Vallée. A scholar is included among the top collaborators of C. Vallée based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. Vallée. C. Vallée is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Vallée, C., et al.. (2024). Study of selective etching of TaN with respect to SiOCH dielectrics using SiF4 plasma processes. Japanese Journal of Applied Physics. 63(9). 91001–91001. 2 indexed citations
2.
Tissot, Héloïse, Beniamino Sciacca, Maïssa K. S. Barr, et al.. (2023). Conductive TiN thin films grown by plasma-enhanced atomic layer deposition: Effects of N-sources and thermal treatments. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 41(3). 7 indexed citations
3.
Vallée, C., et al.. (2023). Investigation into the effect of a PECVD-deposited SiOx chamber coating on the selective, radical-based NF3 etching of TaN with respect to BEOL low-k. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena. 41(3). 3 indexed citations
4.
Kim, Youngjin, et al.. (2021). An Empirical Investigation on the Effect of Oxygen Vacancy in ZrO2 Thin Film on the Frequency-Dependent Capacitance Degradation in the Metal–Insulator–Metal Capacitor. IEEE Transactions on Electron Devices. 68(11). 5753–5757. 12 indexed citations
5.
Vogel, Tobias, Nico Kaiser, Stefan Petzold, et al.. (2021). Defect-Induced Phase Transition in Hafnium Oxide Thin Films: Comparing Heavy Ion Irradiation and Oxygen-Engineering Effects. IEEE Transactions on Nuclear Science. 68(8). 1542–1547. 17 indexed citations
6.
Bonvalot, M., C. Vallée, C. Mannequin, et al.. (2021). Area selective deposition using alternate deposition and etch super-cycle strategies. Dalton Transactions. 51(2). 442–450. 14 indexed citations
7.
Mannequin, C., C. Vallée, T. Chevolleau, et al.. (2020). Comparative study of two atomic layer etching processes for GaN. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 38(3). 21 indexed citations
8.
Klein, Christian, et al.. (2019). Multidomain spectral method for the Gauss hypergeometric function. Numerical Algorithms. 84(1). 1–35. 6 indexed citations
9.
Gros‐Jean, M., et al.. (2018). Hydrogen passivation of silicon/silicon oxide interface by atomic layer deposited hafnium oxide and impact of silicon oxide underlayer. HAL (Le Centre pour la Communication Scientifique Directe). 1 indexed citations
10.
Gonon, P., et al.. (2017). Wide Band Frequency Characterization of Al-Doped and Undoped Rutile TiO2Thin Films for MIM Capacitors. IEEE Electron Device Letters. 38(3). 375–378. 5 indexed citations
11.
Vallée, C., et al.. (2015). Energy-band diagram configuration of Al2O3/oxygen-terminated p-diamond metal-oxide-semiconductor. Applied Physics Letters. 107(14). 33 indexed citations
12.
Vallée, C., et al.. (2014). Navigation grade accelerometer with quartz vibrating beam. 1–14. 9 indexed citations
13.
Vallée, C., Dirk Lucas, Akio Tomiyama, & Michio MURASE. (2012). Experimental investigation of stratified two-phase flows in the hot leg of a PWR for CFD validation. 1 indexed citations
14.
Kahouli, A., Fatiha Challali, Marie‐Paule Besland, et al.. (2012). Dielectric relaxation study of amorphous TiTaO thin films in a large operating temperature range. Journal of Applied Physics. 112(9). 6 indexed citations
15.
Bertaud, T., et al.. (2011). Ultra wide band frequency characterization of integrated TiTaO-based metal–insulator–metal devices. Journal of Applied Physics. 110(4). 8 indexed citations
16.
Bartosiewicz, Yann, Jean-Marie Seynhaeve, C. Vallée, Thomas Höhne, & J. Laviéville. (2010). Modeling free surface flows relevant to a PTS scenario: Comparison between experimental data and three RANS based CFD-codes. Comments on the CFD-experiment integration and best practice guideline. Nuclear Engineering and Design. 240(9). 2375–2381. 14 indexed citations
17.
Vallée, C., Dirk Lucas, Matthias Beyer, et al.. (2009). Experimental CFD grade data for stratified two-phase flows. Nuclear Engineering and Design. 240(9). 2347–2356. 8 indexed citations
18.
Vallée, C., et al.. (2007). Experimental investigation and CFD simulation of horizontal stratified two-phase flow phenomena. Nuclear Engineering and Design. 238(3). 637–646. 80 indexed citations
19.
Saxcé, Géry de, et al.. (2006). Existence and construction of bipotentials for graphs of multivalued laws. HAL (Le Centre pour la Communication Scientifique Directe). 2 indexed citations
20.
Vallée, C., et al.. (1999). Chemical etching of thin SiOxCyHz films by post-deposition exposure to oxygen plasma. Applied Surface Science. 138-139. 57–61. 19 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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