C.E. Weitzel

1.7k total citations
54 papers, 1.3k citations indexed

About

C.E. Weitzel is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, C.E. Weitzel has authored 54 papers receiving a total of 1.3k indexed citations (citations by other indexed papers that have themselves been cited), including 53 papers in Electrical and Electronic Engineering, 15 papers in Atomic and Molecular Physics, and Optics and 12 papers in Condensed Matter Physics. Recurrent topics in C.E. Weitzel's work include Radio Frequency Integrated Circuit Design (19 papers), Silicon Carbide Semiconductor Technologies (19 papers) and Semiconductor materials and devices (17 papers). C.E. Weitzel is often cited by papers focused on Radio Frequency Integrated Circuit Design (19 papers), Silicon Carbide Semiconductor Technologies (19 papers) and Semiconductor materials and devices (17 papers). C.E. Weitzel collaborates with scholars based in United States, Germany and United Kingdom. C.E. Weitzel's co-authors include Karen Moore, John W. Palmour, M. Bhatnagar, Scott T. Allen, C.H. Carter, Kevin J. Nordquist, R. T. Smith, E. Luckowski, B. J. Skromme and Dale Ganser and has published in prestigious journals such as Applied Physics Letters, Journal of The Electrochemical Society and Surface Science.

In The Last Decade

C.E. Weitzel

49 papers receiving 1.2k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
C.E. Weitzel United States	13	1.2k	297	243	121	76	54	1.3k
B. Gunnar Malm Sweden	20	1.2k 0.9×	470 1.6×	151 0.6×	155 1.3×	111 1.5×	94	1.4k
Hideki Hatano Japan	16	480 0.4×	633 2.1×	124 0.5×	196 1.6×	73 1.0×	54	791
Marco Rossetti Switzerland	18	706 0.6×	701 2.4×	234 1.0×	138 1.1×	38 0.5×	58	919
G. Sarrabayrouse France	18	913 0.7×	189 0.6×	46 0.2×	205 1.7×	53 0.7×	123	1.0k
I. V. Grekhov Russia	17	924 0.7×	434 1.5×	53 0.2×	244 2.0×	72 0.9×	142	1.2k
Philippe Grosse France	18	1.3k 1.0×	732 2.5×	44 0.2×	155 1.3×	72 0.9×	85	1.5k
S. Yamazaki Japan	16	661 0.5×	164 0.6×	49 0.2×	185 1.5×	54 0.7×	68	793
Laurent Souriau Belgium	19	880 0.7×	477 1.6×	55 0.2×	203 1.7×	123 1.6×	68	1.1k
T. T. Mnatsakanov Russia	17	888 0.7×	404 1.4×	251 1.0×	159 1.3×	91 1.2×	70	1.0k
L. E. Ramos Germany	17	363 0.3×	242 0.8×	132 0.5×	491 4.1×	80 1.1×	27	726

Countries citing papers authored by C.E. Weitzel

Since Specialization

Citations

This map shows the geographic impact of C.E. Weitzel's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C.E. Weitzel with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C.E. Weitzel more than expected).

Fields of papers citing papers by C.E. Weitzel

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C.E. Weitzel. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C.E. Weitzel. The network helps show where C.E. Weitzel may publish in the future.

Co-authorship network of co-authors of C.E. Weitzel

This figure shows the co-authorship network connecting the top 25 collaborators of C.E. Weitzel. A scholar is included among the top collaborators of C.E. Weitzel based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C.E. Weitzel. C.E. Weitzel is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Skromme, B. J., et al.. (2010). Reduction of Low-Temperature Nonlinearities in Pseudomorphic AlGaAs/InGaAs HEMTs Due to Si-Related DX Centers. IEEE Transactions on Electron Devices. 57(4). 749–754. 1 indexed citations

Huang, Wei, Herbert S. Bennett, Júlio Costa, et al.. (2006). RF, Analog and Mixed Signal Technologies for Communication ICs - An ITRS Perspective. 1–7. 9 indexed citations

Palmour, John W., C.E. Weitzel, Kevin J. Nordquist, & C.H. Carter. (2005). 4H-silicon carbide mesfet with 2.8 W/mm rf power density. 27–28.

Weitzel, C.E., et al.. (2005). Advanced technologies for power amplifiers. IEEE MTT-S International Microwave Symposium Digest, 2005.. 821–821. 1 indexed citations

Fisher, Philip A., et al.. (2005). High power density InGaP PHEMTs for 26 V operation. 375–378. 3 indexed citations

Bennett, Herbert S., Ralf Brederlow, Júlio Costa, et al.. (2005). Device and Technology Evolution for Si-Based RF Integrated Circuits. IEEE Transactions on Electron Devices. 52(7). 1235–1258. 83 indexed citations

Bennett, Herbert S., Ralf Brederlow, Júlio Costa, et al.. (2004). Radio-frequency and Analog/Mixed-signal Circuits and Devices for Wireless Communications. IEEE Circuits and Devices Magazine. 1 indexed citations

Weitzel, C.E.. (2003). RF power devices for wireless communications. 14 indexed citations

Weitzel, C.E.. (2003). RF power amplifiers for wireless communications. 127–130. 342 indexed citations

10.

Weitzel, C.E.. (2002). RF POWER AMPLIFERS FOR WIRELESS COMMUNICATIONS. 3 indexed citations

11.

Weitzel, C.E., et al.. (2000). Accumulation-Mode SiC Power MOSFET Design Issues. Materials science forum. 338-342. 1287–1290. 1 indexed citations

12.

Weitzel, C.E., et al.. (1998). Effect of Device Temperature on RF FET Power Density. Materials science forum. 264-268. 969–972. 11 indexed citations

13.

Weitzel, C.E. & Karen Moore. (1997). Silicon Carbide And Gallium Nitride Rf Power Devices. MRS Proceedings. 483. 9 indexed citations

14.

Moore, Karen, et al.. (1997). 4H-SiC MESFET with 65.7% power added efficiency at 850 MHz. IEEE Electron Device Letters. 18(2). 69–70. 32 indexed citations

15.

Allen, Scott T., John W. Palmour, C.H. Carter, et al.. (1996). Silicon carbide MESFET's with 2 W/mm and 50% P.A.E. at 1.8 GHz. 681–684 vol.2. 5 indexed citations

16.

Weitzel, C.E., et al.. (1994). 4H-SiC MESFET with 2.8 W/mm power density at 1.8 GHz. IEEE Electron Device Letters. 15(10). 406–408. 69 indexed citations

17.

Paulson, W. M., et al.. (1987). Rapid thermal annealing of si implanted gaas. Journal of Electronic Materials. 16(3). 187–193. 8 indexed citations

18.

Weitzel, C.E., et al.. (1986). A Review of GaAs MESFET Gate Electrode Fabrication Technologies. Journal of The Electrochemical Society. 133(10). 409C–416C. 6 indexed citations

19.

Smith, R. T. & C.E. Weitzel. (1982). Influence of sapphire substrate orientation on SOS crystalline quality and SOS/MOS transistor mobility. Journal of Crystal Growth. 58(1). 61–72. 15 indexed citations

20.

Goodman, Alvin M. & C.E. Weitzel. (1977). The effect of electron-beam aluminization on the Si-sapphire interface. Applied Physics Letters. 31(2). 114–117. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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