D. Alok

740 total citations
27 papers, 594 citations indexed

About

D. Alok is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, D. Alok has authored 27 papers receiving a total of 594 indexed citations (citations by other indexed papers that have themselves been cited), including 27 papers in Electrical and Electronic Engineering, 6 papers in Atomic and Molecular Physics, and Optics and 3 papers in Materials Chemistry. Recurrent topics in D. Alok's work include Silicon Carbide Semiconductor Technologies (26 papers), Semiconductor materials and devices (20 papers) and Thin-Film Transistor Technologies (7 papers). D. Alok is often cited by papers focused on Silicon Carbide Semiconductor Technologies (26 papers), Semiconductor materials and devices (20 papers) and Thin-Film Transistor Technologies (7 papers). D. Alok collaborates with scholars based in United States, Finland and India. D. Alok's co-authors include B. Jayant Baliga, E. Arnold, P.K. McLarty, R. Raghunathan, R.J. Gutmann, Kiran Chatty, P.M. Shenoy, Michael G. Spencer, K. Wongchotigul and T. Paul Chow and has published in prestigious journals such as Applied Physics Letters, Journal of The Electrochemical Society and IEEE Transactions on Electron Devices.

In The Last Decade

D. Alok

27 papers receiving 578 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
D. Alok United States	13	580	202	56	45	41	27	594
V. Khemka United States	15	676 1.2×	141 0.7×	47 0.8×	88 2.0×	40 1.0×	54	691
T. Troffer Germany	8	505 0.9×	142 0.7×	58 1.0×	20 0.4×	59 1.4×	12	514
Fanny Dahlquist Sweden	9	525 0.9×	153 0.8×	80 1.4×	23 0.5×	16 0.4×	11	529
K. Rottner Sweden	10	399 0.7×	114 0.6×	52 0.9×	23 0.5×	51 1.2×	25	409
Mitsuhiro Kushibe Japan	11	354 0.6×	164 0.8×	40 0.7×	37 0.8×	42 1.0×	32	376
Alessia Frazzetto Italy	12	395 0.7×	143 0.7×	81 1.4×	81 1.8×	51 1.2×	19	427
T. Dalibor Germany	9	665 1.1×	231 1.1×	88 1.6×	10 0.2×	57 1.4×	17	679
Akimasa Kinoshita Japan	12	375 0.6×	128 0.6×	43 0.8×	14 0.3×	48 1.2×	40	407
J. P. Bergman Sweden	4	406 0.7×	158 0.8×	50 0.9×	25 0.6×	32 0.8×	6	417
E. Luckowski United States	9	309 0.5×	164 0.8×	31 0.6×	17 0.4×	47 1.1×	23	324

Countries citing papers authored by D. Alok

Since Specialization

Citations

This map shows the geographic impact of D. Alok's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by D. Alok with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites D. Alok more than expected).

Fields of papers citing papers by D. Alok

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by D. Alok. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by D. Alok. The network helps show where D. Alok may publish in the future.

Co-authorship network of co-authors of D. Alok

This figure shows the co-authorship network connecting the top 25 collaborators of D. Alok. A scholar is included among the top collaborators of D. Alok based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with D. Alok. D. Alok is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Shenoy, P.M., et al.. (2002). Vertical Schottky barrier diodes on 3C-SiC grown on Si. 411–414. 7 indexed citations

Alok, D., B. Jayant Baliga, & P.K. McLarty. (2002). Low contact resistivity ohmic contacts to 6H-silicon carbide. 162. 691–694. 8 indexed citations

Alok, D. & B. Jayant Baliga. (2002). A planar, nearly ideal, SiC device edge termination. 1. 96–100. 1 indexed citations

Chatty, Kiran, T. P. Chow, R.J. Gutmann, E. Arnold, & D. Alok. (2002). Comparative hall measurements on wet- and dry-oxidized 4H-SiC MOSFETs. Journal of Electronic Materials. 31(5). 356–360. 3 indexed citations

Alok, D. & B. Jayant Baliga. (2002). Nitrogen implanted high voltage, planar, 6H-SiC N/sup +/-P junction diodes. 107–110. 3 indexed citations

Arnold, E. & D. Alok. (2001). Effect of interface states on electron transport in 4H-SiC inversion layers. IEEE Transactions on Electron Devices. 48(9). 1870–1877. 104 indexed citations

Alok, D., et al.. (2000). Process Dependence of Inversion Layer Mobility in 4H-SiC Devices. Materials science forum. 338-342. 1077–1080. 5 indexed citations

Alok, D., et al.. (1999). Bias-Temperature-Stress Induced Mobility Improvement in 4H-SiC MOSFETs. MRS Proceedings. 572. 2 indexed citations

Alok, D., et al.. (1998). Effect of Surface Preparation and Thermal Anneal on Electrical Characteristics of 4H-SiC Schottky Barrier Diodes. Materials science forum. 264-268. 929–932. 12 indexed citations

10.

Alok, D. & B. Jayant Baliga. (1997). SiC device edge termination using finite area argon implantation. IEEE Transactions on Electron Devices. 44(6). 1013–1017. 54 indexed citations

11.

Alok, D., et al.. (1997). Residual damage effects on gate contacts formed on SiC surfaces etched by using the amorphization technique. Journal of Electronic Materials. 26(3). 108–112. 1 indexed citations

12.

Alok, D. & B. Jayant Baliga. (1997). Kinetics of Enhanced Thermal Oxidation of Silicon Carbide Using Amorphization by Ion Implantation. Journal of The Electrochemical Society. 144(3). 1135–1137. 12 indexed citations

13.

Alok, D., et al.. (1996). Reactive ion etching of trenches in 6H-SiC. Journal of Electronic Materials. 25(5). 875–878. 12 indexed citations

14.

Alok, D., R. Raghunathan, & B. Jayant Baliga. (1996). Planar edge termination for 4H-silicon carbide devices. IEEE Transactions on Electron Devices. 43(8). 1315–1317. 30 indexed citations

15.

Alok, D. & B. Jayant Baliga. (1996). High voltage (450 V) 6H-SiC lateral MESFET structure. Electronics Letters. 32(20). 1929–1931. 7 indexed citations

16.

Alok, D. & B. Jayant Baliga. (1995). A novel method for etching trenches in silicon carbide. Journal of Electronic Materials. 24(4). 311–314. 16 indexed citations

17.

Shenoy, P.M., et al.. (1995). Low resistivity as-deposited ohmic contacts to 3C-SiC. Journal of Electronic Materials. 24(4). 315–318. 12 indexed citations

18.

Raghunathan, R., D. Alok, & B. Jayant Baliga. (1995). High voltage 4H-SiC Schottky barrier diodes. IEEE Electron Device Letters. 16(6). 226–227. 87 indexed citations

19.

Alok, D., B. Jayant Baliga, & P.K. McLarty. (1994). Thermal oxidation of 6H-silicon carbide at enhanced growth rates. IEEE Electron Device Letters. 15(10). 424–426. 24 indexed citations

20.

Alok, D., B. Jayant Baliga, & P.K. McLarty. (1994). A simple edge termination for silicon carbide devices with nearly ideal breakdown voltage. IEEE Electron Device Letters. 15(10). 394–395. 73 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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