T. Troffer

633 total citations
12 papers, 514 citations indexed

About

T. Troffer is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Mechanical Engineering. According to data from OpenAlex, T. Troffer has authored 12 papers receiving a total of 514 indexed citations (citations by other indexed papers that have themselves been cited), including 12 papers in Electrical and Electronic Engineering, 4 papers in Atomic and Molecular Physics, and Optics and 4 papers in Mechanical Engineering. Recurrent topics in T. Troffer's work include Silicon Carbide Semiconductor Technologies (10 papers), Semiconductor materials and devices (6 papers) and Silicon and Solar Cell Technologies (4 papers). T. Troffer is often cited by papers focused on Silicon Carbide Semiconductor Technologies (10 papers), Semiconductor materials and devices (6 papers) and Silicon and Solar Cell Technologies (4 papers). T. Troffer collaborates with scholars based in Germany, Sweden and United States. T. Troffer's co-authors include Gerhard Pensl, Thomas Frank, M. Schadt, Markus Maier, J. Heindl, H. Itoh, H. P. Strunk, Adolf Schöner, W. J. Choyke and Robert P. Devaty and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Materials science forum.

In The Last Decade

T. Troffer

12 papers receiving 497 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
T. Troffer Germany 8 505 142 59 58 53 12 514
K. Rottner Sweden 10 399 0.8× 114 0.8× 51 0.9× 52 0.9× 28 0.5× 25 409
T. Dalibor Germany 9 665 1.3× 231 1.6× 57 1.0× 88 1.5× 31 0.6× 17 679
D. Alok United States 13 580 1.1× 202 1.4× 41 0.7× 56 1.0× 30 0.6× 27 594
Frank Schmid Germany 13 411 0.8× 111 0.8× 77 1.3× 47 0.8× 65 1.2× 23 435
Akimasa Kinoshita Japan 12 375 0.7× 128 0.9× 48 0.8× 43 0.7× 19 0.4× 40 407
N.S. Savkina Russia 13 502 1.0× 175 1.2× 92 1.6× 50 0.9× 57 1.1× 76 538
Lori A. Lipkin United States 14 809 1.6× 131 0.9× 79 1.3× 178 3.1× 50 0.9× 24 832
Hervé Peyre France 12 331 0.7× 101 0.7× 93 1.6× 98 1.7× 20 0.4× 55 372
Ravi Kumar Chanana India 8 807 1.6× 141 1.0× 65 1.1× 150 2.6× 36 0.7× 18 817
Danilo Crippa Italy 12 418 0.8× 55 0.4× 71 1.2× 151 2.6× 36 0.7× 40 459

Countries citing papers authored by T. Troffer

Since Specialization
Citations

This map shows the geographic impact of T. Troffer's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by T. Troffer with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites T. Troffer more than expected).

Fields of papers citing papers by T. Troffer

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by T. Troffer. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by T. Troffer. The network helps show where T. Troffer may publish in the future.

Co-authorship network of co-authors of T. Troffer

This figure shows the co-authorship network connecting the top 25 collaborators of T. Troffer. A scholar is included among the top collaborators of T. Troffer based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with T. Troffer. T. Troffer is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

12 of 12 papers shown
1.
Itoh, Hisayoshi, T. Troffer, & Gerhard Pensl. (1998). Coimplantation Effects on the Electrical Properties of Boron and Aluminium Acceptors in 4H-SiC. Materials science forum. 264-268. 685–688. 15 indexed citations
2.
Frank, Thomas, T. Troffer, Gerhard Pensl, et al.. (1998). Incorporation of the D-Center in SiC Controlled either by Coimplantation of Si/B and C/B or by Site-Competition Epitaxy. Materials science forum. 264-268. 681–684. 13 indexed citations
3.
Sridhara, S.G., L. L. Clemen, Robert P. Devaty, et al.. (1998). Photoluminescence and transport studies of boron in 4H SiC. Journal of Applied Physics. 83(12). 7909–7919. 100 indexed citations
4.
Devaty, Robert P., W. J. Choyke, S.G. Sridhara, et al.. (1998). Optical Properties of Silicon Carbide: Some Recent Developments. Materials science forum. 264-268. 455–460. 5 indexed citations
5.
Troffer, T., Gerhard Pensl, Adolf Schöner, et al.. (1998). Electrical Characterization of the Gallium Acceptor in 4H- and 6H-SiC. Materials science forum. 264-268. 557–560. 13 indexed citations
6.
Sridhara, S.G., Robert P. Devaty, W. J. Choyke, et al.. (1998). Boron Four Particle Acceptor Bound Exciton Complex in 4H SiC. Materials science forum. 264-268. 461–464. 7 indexed citations
7.
Troffer, T., et al.. (1998). Formation of Pyramidal Pits at the Interface of 3C-SiC and Si(001) Substrates Grown by Gas Source MBE. Materials science forum. 264-268. 247–250. 4 indexed citations
8.
Itoh, Hisayoshi, et al.. (1998). Effects of C or Si co-implantation on the electrical activation of B atoms implanted in 4H–SiC. Applied Physics Letters. 73(10). 1427–1429. 28 indexed citations
9.
Troffer, T., M. Schadt, Thomas Frank, et al.. (1997). Doping of SiC by Implantation of Boron and Aluminum. physica status solidi (a). 162(1). 277–298. 245 indexed citations
10.
Pensl, Gerhard, Valeri Afanas’ev, M. Baßler, et al.. (1996). Electrical properties of silicon carbide polytypes. 142. 275–280. 6 indexed citations
11.
Troffer, T., et al.. (1996). Phosphorus-related donors in 6H-SiC generated by ion implantation. Journal of Applied Physics. 80(7). 3739–3743. 65 indexed citations
12.
Pensl, Gerhard & T. Troffer. (1995). Silicon Carbide - A Promising Wide-Band-Gap Semiconductor for Electronic Devices. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 47-48. 115–126. 13 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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