C. C. Tin

2.5k total citations · 1 hit paper
72 papers, 2.0k citations indexed

About

C. C. Tin is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, C. C. Tin has authored 72 papers receiving a total of 2.0k indexed citations (citations by other indexed papers that have themselves been cited), including 66 papers in Electrical and Electronic Engineering, 21 papers in Atomic and Molecular Physics, and Optics and 16 papers in Materials Chemistry. Recurrent topics in C. C. Tin's work include Semiconductor materials and devices (53 papers), Silicon Carbide Semiconductor Technologies (50 papers) and Semiconductor materials and interfaces (16 papers). C. C. Tin is often cited by papers focused on Semiconductor materials and devices (53 papers), Silicon Carbide Semiconductor Technologies (50 papers) and Semiconductor materials and interfaces (16 papers). C. C. Tin collaborates with scholars based in United States, Singapore and China. C. C. Tin's co-authors include John R. Williams, L. C. Feldman, Gil Yong Chung, K. McDonald, Robert A. Weller, Sokrates T. Pantelides, Ravi Kumar Chanana, Massimiliano Di Ventra, Mrinal K. Das and O. W. Holland and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

C. C. Tin

71 papers receiving 1.9k citations

Hit Papers

Improved inversion channel mobility for 4H-SiC MOSFETs fo... 2001 2026 2009 2017 2001 100 200 300 400 500
What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

  1. Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide
    2001 538 citations Gil Yong Chung, C. C. Tin et al. profile →

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
C. C. Tin United States 19 1.8k 406 385 311 124 72 2.0k
Thierry Chassagne France 21 1.0k 0.6× 296 0.7× 303 0.8× 495 1.6× 81 0.7× 92 1.3k
Tamara Isaacs‐Smith United States 19 1.0k 0.6× 259 0.6× 305 0.8× 246 0.8× 72 0.6× 81 1.2k
M. Bhatnagar United States 8 1.5k 0.9× 175 0.4× 524 1.4× 231 0.7× 97 0.8× 15 1.7k
J. Kretchmer United States 21 1.0k 0.6× 217 0.5× 354 0.9× 257 0.8× 57 0.5× 42 1.3k
H.B. Harrison Australia 22 2.1k 1.2× 323 0.8× 722 1.9× 440 1.4× 111 0.9× 109 2.3k
Hidekazu Tsuchida Japan 31 3.3k 1.8× 615 1.5× 909 2.4× 306 1.0× 233 1.9× 208 3.4k
Yimen Zhang China 17 1.3k 0.7× 379 0.9× 410 1.1× 476 1.5× 27 0.2× 258 1.6k
Albert A. Burk United States 25 1.8k 1.0× 215 0.5× 265 0.7× 157 0.5× 81 0.7× 85 2.0k
G. G. Fountain United States 23 1.3k 0.7× 252 0.6× 271 0.7× 418 1.3× 20 0.2× 70 1.5k
Kevin Matocha United States 19 1.4k 0.8× 295 0.7× 132 0.3× 163 0.5× 41 0.3× 82 1.5k

Countries citing papers authored by C. C. Tin

Since Specialization
Citations

This map shows the geographic impact of C. C. Tin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. C. Tin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. C. Tin more than expected).

Fields of papers citing papers by C. C. Tin

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. C. Tin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. C. Tin. The network helps show where C. C. Tin may publish in the future.

Co-authorship network of co-authors of C. C. Tin

This figure shows the co-authorship network connecting the top 25 collaborators of C. C. Tin. A scholar is included among the top collaborators of C. C. Tin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. C. Tin. C. C. Tin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Seo, Hye-Won, et al.. (2006). Lasing in whispering gallery mode in ZnO nanonails. Journal of Applied Physics. 99(9). 104 indexed citations
2.
Tin, C. C., et al.. (2005). Raman characterization of electronic properties of self-assembled GaN nanorods grown by plasma-assisted molecular-beam epitaxy. Applied Physics Letters. 87(24). 18 indexed citations
3.
Gopalakrishnan, R., et al.. (2005). Reactive Ion Etching Induced Surface Damage of Silicon Carbide. Materials science forum. 483-485. 765–768. 3 indexed citations
4.
Rusli, Rusli, et al.. (2005). Improved performance of SiC MESFETs using double-recessed structure. Microelectronic Engineering. 83(1). 92–95. 68 indexed citations
5.
Seo, Hee, Yonhua Tzeng, Noppadon Sathitsuksanoh, et al.. (2004). Growth and Characterization of ZnO Nanonail. MRS Proceedings. 829. 3 indexed citations
6.
Tin, C. C., E. Luckowski, Jeff B. Casady, et al.. (2002). Electric field breakdown mechanisms in high power epitaxial 4H-SiC p-n junction diodes. 55–58. 2 indexed citations
7.
Chung, Gil Yong, John R. Williams, C. C. Tin, et al.. (2001). Interface state density and channel mobility for 4H-SiC MOSFETs with nitrogen passivation. Applied Surface Science. 184(1-4). 399–403. 28 indexed citations
8.
Merrett, J. Neil, David C. Sheridan, John R. Williams, C. C. Tin, & John D. Cressler. (2001). A Novel Technique for Shallow Angle Beveling of SiC to Prevent Surface Breakdown in Power Devices. Materials science forum. 353-356. 623–626. 1 indexed citations
9.
Sheridan, David C., Guofu Niu, J. Neil Merrett, et al.. (2000). Simulation and Fabrication of High-Voltage 4H-SiC Diodes with Multiple Floating Guard Ring Termination. Materials science forum. 338-342. 1339–1342. 2 indexed citations
10.
Pantelides, Sokrates T., R. Buczko, Massimiliano Di Ventra, et al.. (2000). Bonding, Defects, And Defect Dynamics In The Sic-SiO2 System. MRS Proceedings. 640. 1 indexed citations
11.
Chung, Gil Yong, C. C. Tin, Jonghan Won, & John R. Williams. (2000). The Effect of Si:C Source Ratio on SiO<sub>2</sub>/SiC Interface State Density for Nitrogen Doped 4H and 6H-SiC. Materials science forum. 338-342. 1097–1100. 6 indexed citations
12.
Feng, Zhe Chuan, et al.. (1995). Raman and Rutherford backscattering analyses of cubic SiC thin films grown on Si by vertical chemical vapor deposition. Thin Solid Films. 266(1). 1–7. 36 indexed citations
13.
Feng, Zhe Chuan, et al.. (1995). Combined Raman and luminescence assessment of epitaxial 6H-SiC films grown on 6H-SiC by low pressure vertical chemical vapour deposition. Semiconductor Science and Technology. 10(10). 1418–1422. 4 indexed citations
14.
Tin, C. C., et al.. (1995). Reduction of etch pits in heteroepitaxial growth of 3CSiC on silicon. Journal of Crystal Growth. 148(1-2). 116–124. 23 indexed citations
15.
Tin, C. C., P. A. Barnes, Thomas Bardin, & J.G. Pronko. (1991). Near-surface defects associated with 2.0-MeV 16O+ ion implantation in n-GaAs. Journal of Applied Physics. 70(2). 739–743. 2 indexed citations
16.
Tzeng, Yonhua, et al.. (1990). High electrical resistivity diamond films deposited from an oxyacetylene flame. Applied Physics Letters. 57(8). 789–791. 18 indexed citations
17.
Weichman, F. L., et al.. (1989). EL2 and gallium antisite defects in GaAs: Si. Canadian Journal of Physics. 67(4). 375–378. 4 indexed citations
18.
Tin, C. C., et al.. (1989). Capacitance-voltage studies of InP metal-oxide-semiconductor devices irradiated with 4He+ ions. Journal of Applied Physics. 66(9). 4201–4205. 2 indexed citations
19.
Tin, C. C., et al.. (1987). Optical and electrical studies of liquid-encapsulated Czochralski semi-insulating GaAs with different carbon concentrations. Canadian Journal of Physics. 65(8). 945–949. 2 indexed citations
20.
Tin, C. C., et al.. (1986). A new method of analysis of photoluminescence decay curves. Journal of Luminescence. 35(1). 17–23. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact

Breakdown of academic impact, for papers by Thierry Chassagne Breakdown of academic impact, for papers by Tamara Isaacs‐Smith Breakdown of academic impact, for papers by M. Bhatnagar Breakdown of academic impact, for papers by J. Kretchmer Breakdown of academic impact, for papers by H.B. Harrison Breakdown of academic impact, for papers by Hidekazu Tsuchida Breakdown of academic impact, for papers by Yimen Zhang Breakdown of academic impact, for papers by Albert A. Burk Breakdown of academic impact, for papers by G. G. Fountain Breakdown of academic impact, for papers by Kevin Matocha
Rankless by CCL
2026