C. C. Tin

2.5k citations
72 papers · 2.0k · 1 hit paper · h-index 19

Impact in

Papers in

C. C. Tin

71 papers receiving 1.9k citations

Hit Papers

Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide 2001 · 538 citations
5380+8+16Years since publication100200300400500

Peers

C. C. Tin
Comparison fields: 5 of 65
  • Electrical and Electronic Engineering 1.8k
  • Electronic, Optical and Magnetic Materials 406
  • Ceramics and Composites 124
  • Acoustics and Ultrasonics 17
  • Atomic and Molecular Physics, and Optics 385
Replace Michael Woda with:
Michael Woda Germany
H.B. Harrison Australia
C. E. Land United States
Tamara Isaacs‐Smith United States
A. Giussani Germany
M. Bhatnagar United States
Albert A. Burk United States
Mario Saggio Italy
Hidekazu Tsuchida Japan
Thierry Chassagne France
C. C. Tin relative to Michael Woda Germany Michael Woda's profile →
Citations per field
00.5×2.8×
Michael Woda · 1×
Citations per year

Countries citing papers authored by C. C. Tin

Since Specialization
Citations

This map shows the geographic impact of C. C. Tin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. C. Tin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. C. Tin more than expected).

Fields of papers citing papers by C. C. Tin

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. C. Tin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. C. Tin. The network helps show where C. C. Tin may publish in the future.

Co-authors

The 25 scholars most cited alongside C. C. Tin, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with C. C. Tin Line = papers co-authored together C. C. Tin links everyone, so they are left out of the graph.

All Works

20 of 20 papers shown

Showing the 20 most-cited of 72 papers — load more, or switch the sort, to bring in the rest.

#Work
1
Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide
Hit paper breakdown →
2001538
2 2000359
3 2006104
4 200090
5 200384
6 200674
7 200568
8 200462
9 200352
10 200049
11 201447
12 199536
13 200128
14 200525
15 198724
16 199523
17 200520
18 200520
19 199419
20 199018

About C. C. Tin

C. C. Tin is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Materials Chemistry, Electronic, Optical and Magnetic Materials and Condensed Matter Physics, having authored 72 papers that have together received 2.0k indexed citations. Recurring topics across this work include Semiconductor materials and devices (53 papers), Silicon Carbide Semiconductor Technologies (50 papers), Semiconductor materials and interfaces (16 papers), Thin-Film Transistor Technologies (9 papers), Copper Interconnects and Reliability (8 papers), ZnO doping and properties (7 papers), Diamond and Carbon-based Materials Research (6 papers) and Integrated Circuits and Semiconductor Failure Analysis (6 papers). The work is most often cited by research in Electrical and Electronic Engineering (1.8k citations), Electronic, Optical and Magnetic Materials (406 citations), Ceramics and Composites (124 citations), Acoustics and Ultrasonics (17 citations) and Atomic and Molecular Physics, and Optics (385 citations). C. C. Tin has collaborated with scholars based in United States, Singapore and China. Frequent co-authors include John R. Williams, L. C. Feldman, Gil Yong Chung, K. McDonald, Robert A. Weller, Sokrates T. Pantelides, Ravi Kumar Chanana, Massimiliano Di Ventra, Mrinal K. Das and O. W. Holland. Their work appears in journals such as Journal of Applied Physics, Applied Physics Letters, Microelectronic Engineering, Applied Surface Science and Journal of Crystal Growth.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact