R.R. Siergiej

1.4k citations

53 papers · 1.0k indexed · h-index 17

Electrical and Electronic Engineering top 5%
Civil and Structural Engineering top 5%
Atomic and Molecular Physics, and Optics top 10%
Statistical and Nonlinear Physics top 5%
Condensed Matter Physics top 10%

Co-authors: Anant Agarwal C.D. Brandt R.C. Clarke M.H. White S. Sriram Jeff B. Casady Albert A. Burk S. R. Seshadri
Topics: Silicon Carbide Semiconductor Technologies (36 papers)Semiconductor materials and devices (17 papers)Electromagnetic Compatibility and Noise Suppression (13 papers)
Cited by: Electrical and Electronic Engineering Nuclear Energy and Engineering Statistical and Nonlinear Physics
Journals: Journal of The Electrochemical Society IEEE Transactions on Electron Devices Thin Solid Films
Partner nations: United States Germany China

In The Last Decade

R.R. Siergiej

50 papers receiving 947 citations

Peers

Countries citing papers authored by R.R. Siergiej

Since Specialization

Citations

This map shows the geographic impact of R.R. Siergiej's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R.R. Siergiej with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R.R. Siergiej more than expected).

Fields of papers citing papers by R.R. Siergiej

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R.R. Siergiej. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R.R. Siergiej. The network helps show where R.R. Siergiej may publish in the future.

Co-authorship network of co-authors of R.R. Siergiej

This figure shows the co-authorship network connecting the top 25 collaborators of R.R. Siergiej. A scholar is included among the top collaborators of R.R. Siergiej based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R.R. Siergiej. R.R. Siergiej is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Investigating thin film stresses in stacked silicon dioxide/silicon nitride structures and quantifying their effects on frequency response 2007 ·Journal of Micromechanics and Microengineering ·(unknown),Gregory D. Buckner,Taeyun Kim,Angus I. Kingon,(unknown),R.R. Siergiej	16
2	InGaAs series-connected, tandem, MIM TPV converters 2003 ·3rd World Conference onPhotovoltaic Energy Conversion, 2003. Proceedings of ·(unknown),M. W. Wanlass,David M. Wilt,B. Wernsman,R.R. Siergiej,J. J. Carapella	6
3	Multi-wafer growth and processing of 0.6-eV InGaAs monolithic interconnected modules 2003 ·Christopher S. Murray,F.H. Newman,(unknown),(unknown),D. Aiken,R.R. Siergiej,B. Wernsman,Alex Taylor	3
4	Turn-off characteristics of 1000 V SiC gate-turn-off thyristors 2002 ·S. R. Seshadri,Jeff B. Casady,Anant Agarwal,R.R. Siergiej,L.B. Rowland,Phillip Sanger,C.D. Brandt,(unknown),(unknown),Rostan Rodrigues,(unknown)	3
5	A critical look at the performance advantages and limitations of 4H-SiC power UMOSFET structures 2002 ·Anant Agarwal,R.R. Siergiej,S. R. Seshadri,Mark White,P.G. McMullin,Albert A. Burk,L.B. Rowland,C.D. Brandt,R.H. Hopkins	19
6	Advances in silicon carbide (SiC) device processing and substrate fabrication for high power microwave and high temperature electronics 2002 ·M.C. Driver,R.H. Hopkins,C.D. Brandt,D.L. Barrett,Albert A. Burk,R.C. Clarke,G.W. Eldridge,H. McD. Hobgood,(unknown),P.G. McMullin,R.R. Siergiej,S. Sriram	1
7	Recent progress in 4H-SiC static induction transistors for high frequency power generation 2002 ·R. Bojko,R.R. Siergiej,G.W. Eldridge,(unknown),(unknown),J. Ostop,(unknown),(unknown),R.C. Clarke,C.D. Brandt	6
8	Application of high power silicon carbide transistors at radar frequencies 2002 ·(unknown),(unknown),R.C. Clarke,C.D. Brandt,R.R. Siergiej,Anant Agarwal	12
9	30 W VHF 6H-SiC power static induction transistor 2002 ·R.C. Clarke,R.R. Siergiej,Anant Agarwal,C.D. Brandt,Albert A. Burk,(unknown),(unknown)	2
10	Ion-implanted static induction transistors in 4H-SiC 2002 ·Anant Agarwal,(unknown),G.W. Eldridge,R.R. Siergiej,R.C. Clarke	2
11	Simulation and Fabrication of High-Voltage 4H-SiC Diodes with Multiple Floating Guard Ring Termination 2000 ·Materials science forum ·David C. Sheridan,Guofu Niu,J. Neil Merrett,John D. Cressler,C. Ellis,C. C. Tin,R.R. Siergiej	2
12	4H-SiC power devices for use in power electronic motor control 1998 ·Solid-State Electronics ·Jeff B. Casady,Anant Agarwal,S. R. Seshadri,R.R. Siergiej,L.B. Rowland,M. F. MacMillan,David C. Sheridan,Phillip Sanger,C.D. Brandt	48
13	1000 V 4H-SiC gate turn off (GTO) thyristor 1997 ·R.R. Siergiej,Jeff B. Casady,Anant Agarwal,L.B. Rowland,S. R. Seshadri,S. S. Mani,Phillip Sanger,C.D. Brandt	6
14	700-V asymmetrical 4H-SiC gate turn-off thyristors (GTO's) 1997 ·IEEE Electron Device Letters ·Anant Agarwal,Jeff B. Casady,L.B. Rowland,S. R. Seshadri,R.R. Siergiej,(unknown),C.D. Brandt	67
15	SiC for Microwave Power Transistors 1997 ·physica status solidi (a) ·S. Sriram,R.R. Siergiej,R.C. Clarke,Anant Agarwal,C.D. Brandt	47
16	SiC High Temperature Electronics for Next Generation Aircraft Controls Systems 1996 ·Volume 5: Manufacturing Materials and Metallurgy; Ceramics; Structures and Dynamics; Controls, Diagnostics and Instrumentation; Education; General ·J. F. Perkins,R.H. Hopkins,C.D. Brandt,Anant Agarwal,(unknown),R.R. Siergiej	1
17	Critical Materials, Device Design, Performance and Reliability Issues in 4H-SiC Power Umosfet Structures 1996 ·MRS Proceedings ·Anant Agarwal,R.R. Siergiej,S. R. Seshadri,Michael White,P.G. McMullin,Albert A. Burk,L.B. Rowland,C.D. Brandt,R.H. Hopkins	16
18	High power silicon carbide IMPATT diode development 1993 ·G.W. Eldridge,D.L. Barrett,Albert A. Burk,H. McD. Hobgood,R.R. Siergiej,C.D. Brandt,M. A. Tischler,Griff L. Bilbro,R.J. Trew,William H. Clark	1
19	A novel method to characterize MOS transistors with mixed gate dielectric technologies 1992 ·IEEE Transactions on Electron Devices ·R.R. Siergiej,M.H. White	6
20	A variable temperature test station for extraction of semiconductor device modeling parameters 1988 ·IEEE Transactions on Instrumentation and Measurement ·R.R. Siergiej,T.J. Krutsick,Michael White	1

About R.R. Siergiej

R.R. Siergiej is a scholar working on Electrical and Electronic Engineering, Statistical and Nonlinear Physics and Civil and Structural Engineering, having authored 53 papers that have together received 1.0k indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (36 papers), Semiconductor materials and devices (17 papers) and Electromagnetic Compatibility and Noise Suppression (13 papers). The work is most often cited by research in Electrical and Electronic Engineering (884 citations), Nuclear Energy and Engineering (5 citations) and Statistical and Nonlinear Physics (129 citations). R.R. Siergiej has collaborated with scholars based in United States, Germany and China. Frequent co-authors include Anant Agarwal, C.D. Brandt, R.C. Clarke, M.H. White, S. Sriram, Jeff B. Casady, Albert A. Burk, S. R. Seshadri, L.B. Rowland and M. F. MacMillan. Their work appears in journals such as Journal of The Electrochemical Society, IEEE Transactions on Electron Devices and Thin Solid Films.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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