P.G. McMullin

918 total citations
23 papers, 663 citations indexed

About

P.G. McMullin is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Mechanical Engineering. According to data from OpenAlex, P.G. McMullin has authored 23 papers receiving a total of 663 indexed citations (citations by other indexed papers that have themselves been cited), including 22 papers in Electrical and Electronic Engineering, 7 papers in Atomic and Molecular Physics, and Optics and 2 papers in Mechanical Engineering. Recurrent topics in P.G. McMullin's work include Semiconductor materials and devices (11 papers), Silicon Carbide Semiconductor Technologies (10 papers) and Semiconductor Lasers and Optical Devices (5 papers). P.G. McMullin is often cited by papers focused on Semiconductor materials and devices (11 papers), Silicon Carbide Semiconductor Technologies (10 papers) and Semiconductor Lasers and Optical Devices (5 papers). P.G. McMullin collaborates with scholars based in United States and Germany. P.G. McMullin's co-authors include R.H. Hopkins, John R. Williams, Michael J. Bozack, J. Crofton, A. Rohatgi, J.R. Davis, H. McD. Hobgood, P. Rai‐Choudhury, J. R. McCormick and R.C. Clarke and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

P.G. McMullin

20 papers receiving 596 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
P.G. McMullin United States	13	614	289	93	48	37	23	663
G.A. Acket Netherlands	14	632 1.0×	426 1.5×	116 1.2×	28 0.6×	18 0.5×	41	770
B. V. Dutt United States	14	437 0.7×	395 1.4×	218 2.3×	19 0.4×	48 1.3×	35	584
R. H. Saul United States	15	418 0.7×	328 1.1×	140 1.5×	36 0.8×	7 0.2×	34	593
Y. Mizushima Japan	11	444 0.7×	310 1.1×	94 1.0×	29 0.6×	15 0.4×	45	555
M. Okayasu Japan	15	629 1.0×	342 1.2×	183 2.0×	126 2.6×	29 0.8×	46	813
J.S. Osinski United States	17	644 1.0×	509 1.8×	72 0.8×	7 0.1×	16 0.4×	53	726
I. Ladany United States	14	491 0.8×	341 1.2×	186 2.0×	15 0.3×	43 1.2×	50	606
A. Torres Spain	13	562 0.9×	337 1.2×	225 2.4×	66 1.4×	10 0.3×	51	738
Shang-Yuan Ren United States	8	260 0.4×	183 0.6×	259 2.8×	30 0.6×	53 1.4×	15	395
C. Brylinski France	16	787 1.3×	549 1.9×	77 0.8×	35 0.7×	16 0.4×	46	835

Countries citing papers authored by P.G. McMullin

Since Specialization

Citations

This map shows the geographic impact of P.G. McMullin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P.G. McMullin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P.G. McMullin more than expected).

Fields of papers citing papers by P.G. McMullin

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P.G. McMullin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P.G. McMullin. The network helps show where P.G. McMullin may publish in the future.

Co-authorship network of co-authors of P.G. McMullin

This figure shows the co-authorship network connecting the top 25 collaborators of P.G. McMullin. A scholar is included among the top collaborators of P.G. McMullin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P.G. McMullin. P.G. McMullin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Siergiej, R.R., Anant Agarwal, Albert A. Burk, et al.. (2005). Novel silicon carbide mosfet's for monolithic integrated circuits. 25–26.

Hwang, James C. M., et al.. (2003). Drain junction leakage current in SIMOX/MOSFETs. 59–59.

Agarwal, Anant, R.R. Siergiej, S. R. Seshadri, et al.. (2002). A critical look at the performance advantages and limitations of 4H-SiC power UMOSFET structures. 119–122. 19 indexed citations

Driver, M.C., R.H. Hopkins, C.D. Brandt, et al.. (2002). Advances in silicon carbide (SiC) device processing and substrate fabrication for high power microwave and high temperature electronics. 19–21. 1 indexed citations

Agarwal, Anant, R.R. Siergiej, S. R. Seshadri, et al.. (1996). Critical Materials, Device Design, Performance and Reliability Issues in 4H-SiC Power Umosfet Structures. MRS Proceedings. 423. 16 indexed citations

Crofton, J., P.G. McMullin, John R. Williams, & Michael J. Bozack. (1995). High-temperature ohmic contact to n-type 6H-SiC using nickel. Journal of Applied Physics. 77(3). 1317–1319. 158 indexed citations

Sriram, S., R.C. Clarke, Albert A. Burk, et al.. (1994). RF performance of SiC MESFET's on high resistivity substrates. IEEE Electron Device Letters. 15(11). 458–459. 50 indexed citations

Barrett, D.L., H. McD. Hobgood, R.H. Hopkins, et al.. (1993). Growth of large SiC single crystals. Journal of Crystal Growth. 128(1-4). 358–362. 74 indexed citations

McMullin, P.G., et al.. (1993). Silicon carbide devices for radiation hard applications. AIP conference proceedings. 271. 625–630. 6 indexed citations

10.

Agarwal, Anant, T.W. O'Keeffe, H. McD. Hobgood, et al.. (1993). MICROX-an all-silicon technology for monolithic microwave integrated circuits. IEEE Electron Device Letters. 14(5). 219–221. 44 indexed citations

11.

Clarke, R.C., et al.. (1992). Silicon carbide microwave MESFET's. IEEE Transactions on Electron Devices. 39(11). 2666–2666. 1 indexed citations

12.

McMullin, P.G. & S. Sinharoy. (1988). A comparative study of the electrical properties of epitaxial fluorides. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 6(3). 1367–1370. 17 indexed citations

13.

Sinharoy, S., P.G. McMullin, J. Greggi, & Y. F. Lin. (1987). Growth and characterization of lattice-matched CaxSr1−xF2 on GaAs(100). Journal of Applied Physics. 62(3). 875–878. 9 indexed citations

14.

Rohatgi, A., J.R. Davis, R.H. Hopkins, & P.G. McMullin. (1983). A study of grown-in impurities in silicon by deep-level transient spectroscopy. Solid-State Electronics. 26(11). 1039–1051. 49 indexed citations

15.

Rohatgi, A., J.R. Davis, R.H. Hopkins, et al.. (1980). Effect of titanium, copper and iron on silicon solar cells. Solid-State Electronics. 23(5). 415–422. 96 indexed citations

16.

Blum, J. M., J. C. McGroddy, P.G. McMullin, et al.. (1975). Oxygen-implanted double-heterojunction GaAs/GaAlAs injection lasers. IEEE Journal of Quantum Electronics. 11(7). 413–418. 23 indexed citations

17.

McMullin, P.G., J. M. Blum, K. K. Shih, Anders Smith, & G. R. Woolhouse. (1974). Effect of doping on degradation of GaAs–Alx Ga1−xAs injection lasers. Applied Physics Letters. 24(12). 595–597. 11 indexed citations

18.

Yang, Edward S., P.G. McMullin, Anders Smith, J. M. Blum, & K. K. Shih. (1974). Degradation-induced microwave oscillations in double-heterostructure injection lasers. Applied Physics Letters. 24(7). 324–327. 31 indexed citations

19.

Anderson, L.K., P.G. McMullin, L.A. D'Asaro, & A. Goetzberger. (1965). MICROWAVE PHOTODIODES EXHIBITING MICROPLASMA-FREE CARRIER MULTIPLICATION. Applied Physics Letters. 6(4). 62–64. 38 indexed citations

20.

McMullin, P.G.. (1964). Precise Wavelength Measurement of Infrared Optical Maser Lines. Applied Optics. 3(5). 641–641. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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