C. Arnodo

479 total citations
23 papers, 393 citations indexed

About

C. Arnodo is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Mechanical Engineering. According to data from OpenAlex, C. Arnodo has authored 23 papers receiving a total of 393 indexed citations (citations by other indexed papers that have themselves been cited), including 23 papers in Electrical and Electronic Engineering, 11 papers in Atomic and Molecular Physics, and Optics and 4 papers in Mechanical Engineering. Recurrent topics in C. Arnodo's work include Semiconductor materials and devices (11 papers), Silicon Carbide Semiconductor Technologies (9 papers) and Semiconductor materials and interfaces (8 papers). C. Arnodo is often cited by papers focused on Semiconductor materials and devices (11 papers), Silicon Carbide Semiconductor Technologies (9 papers) and Semiconductor materials and interfaces (8 papers). C. Arnodo collaborates with scholars based in France, Bulgaria and Hungary. C. Arnodo's co-authors include O. Noblanc, C. Brylinski, S. Cassette, A. Kakanakova‐Georgieva, Ts. Marinova, E. Chartier, G. Radnóczi, B. Pécz, C. Dua and Christian Brylinski and has published in prestigious journals such as Applied Physics Letters, IEEE Journal of Solid-State Circuits and Applied Surface Science.

In The Last Decade

C. Arnodo

23 papers receiving 355 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
C. Arnodo France	11	372	195	49	45	32	23	393
V. Khemka United States	15	676 1.8×	141 0.7×	40 0.8×	88 2.0×	13 0.4×	54	691
E. Luckowski United States	9	309 0.8×	164 0.8×	47 1.0×	17 0.4×	15 0.5×	23	324
D. Alok United States	13	580 1.6×	202 1.0×	41 0.8×	45 1.0×	11 0.3×	27	594
Jesse B. Tucker United States	8	280 0.8×	78 0.4×	43 0.9×	85 1.9×	28 0.9×	28	330
T. Ohnishi Japan	12	314 0.8×	181 0.9×	14 0.3×	65 1.4×	11 0.3×	20	348
M. Bădilă Romania	11	390 1.0×	217 1.1×	48 1.0×	38 0.8×	17 0.5×	59	406
Martin Domeij Sweden	19	1.1k 3.0×	171 0.9×	90 1.8×	62 1.4×	67 2.1×	101	1.2k
Tsutomu Yatsuo Japan	15	702 1.9×	111 0.6×	27 0.6×	33 0.7×	43 1.3×	77	715
Rinus T. P. Lee Singapore	12	414 1.1×	173 0.9×	102 2.1×	62 1.4×	12 0.4×	33	469
H. Murrmann Germany	8	330 0.9×	165 0.8×	106 2.2×	18 0.4×	19 0.6×	10	378

Countries citing papers authored by C. Arnodo

Since Specialization

Citations

This map shows the geographic impact of C. Arnodo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C. Arnodo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C. Arnodo more than expected).

Fields of papers citing papers by C. Arnodo

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C. Arnodo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C. Arnodo. The network helps show where C. Arnodo may publish in the future.

Co-authorship network of co-authors of C. Arnodo

This figure shows the co-authorship network connecting the top 25 collaborators of C. Arnodo. A scholar is included among the top collaborators of C. Arnodo based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C. Arnodo. C. Arnodo is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Ouisse, T., et al.. (2000). Self-heating effects in silicon carbide MESFETs. IEEE Transactions on Electron Devices. 47(11). 2221–2227. 36 indexed citations

Noblanc, O., C. Arnodo, C. Dua, E. Chartier, & Christian Brylinski. (2000). Power Density Comparison between Microwave Power MESFET's Processed on Conductive and Semi-Insulating Wafer. Materials science forum. 338-342. 1247–1250. 34 indexed citations

Kakanakova‐Georgieva, A., Ts. Marinova, O. Noblanc, et al.. (1999). Characterization of ohmic and Schottky contacts on SiC. Thin Solid Films. 343-344. 637–641. 36 indexed citations

Kakanakova‐Georgieva, A., Ts. Marinova, O. Noblanc, et al.. (1999). XPS characterization of tungsten-based contact layers on 4H–SiC. Thin Solid Films. 337(1-2). 180–183. 6 indexed citations

Kakanakova‐Georgieva, A., Ts. Marinova, Roumen Kakanakov, et al.. (1999). Interface chemistry of WN/4H–SiC structures. Applied Surface Science. 151(3-4). 225–232. 12 indexed citations

Noblanc, O., C. Arnodo, C. Dua, E. Chartier, & C. Brylinski. (1999). Progress in the use of 4H-SiC semi-insulating wafers for microwave power MESFETs. Materials Science and Engineering B. 61-62. 339–344. 28 indexed citations

Kakanakova‐Georgieva, A., Roumen Kakanakov, Ts. Marinova, et al.. (1998). Thermostable Ti/Au/Pt/Ti Schottky contacts to n-type 4H-SiC. Semiconductor Science and Technology. 13(9). 1025–1030. 7 indexed citations

Marinova, Ts., A. Kakanakova‐Georgieva, V. Krastev, et al.. (1997). Nickel based ohmic contacts on SiC. Materials Science and Engineering B. 46(1-3). 223–226. 99 indexed citations

Noblanc, O., E. Chartier, C. Arnodo, & C. Brylinski. (1997). Microwave power MESFET on 4H-SiC. Diamond and Related Materials. 6(10). 1508–1511. 14 indexed citations

10.

Collot, P., et al.. (1991). Electrical characterization of InxGa1−xAs/Al0.4Ga0.6As/GaAs pseudomorphic semiconductor/insulator/semiconductor heterostructures. Applied Physics Letters. 58(4). 367–369. 1 indexed citations

11.

Perea, Ernesto, et al.. (1982). GaAs MESFET ICs for gigabit logic applications. IEEE Journal of Solid-State Circuits. 17(3). 569–584. 11 indexed citations

12.

Castagné, R., et al.. (1982). Two-dimensional particle modeling of submicrometer gate GaAs FET's near pinchoff. IEEE Transactions on Electron Devices. 29(8). 1244–1255. 19 indexed citations

13.

Arnodo, C., et al.. (1982). High-Speed GaAs Static Random-Access Memory. IEEE Transactions on Microwave Theory and Techniques. 30(7). 1014–1019. 2 indexed citations

14.

Arnodo, C., et al.. (1982). High-speed GaAs static random-access memory. IEEE Transactions on Electron Devices. 29(7). 1110–1115. 7 indexed citations

15.

Arnodo, C., et al.. (1981). High-speed frequency dividers with quasi-normally-off GaAs MESFETs. Electronics Letters. 17(25-26). 968–970. 3 indexed citations

16.

Laval, S., C. Bru, C. Arnodo, & R. Castagné. (1980). Velocity overshoot investigations in sub-micron GaAs devices by photoconduction experiments. 626–628. 2 indexed citations

17.

Arnodo, C., et al.. (1980). An E-Beam Fabricated GaAs D-Type Flip-Flop IC. IEEE Transactions on Microwave Theory and Techniques. 28(5). 472–478. 6 indexed citations

18.

Arnodo, C., et al.. (1977). Femtojoule logic circuit using normally-off GaAs m.e.s.f.e.t.s. Electronics Letters. 13(21). 644–645. 13 indexed citations

19.

Arnodo, C., et al.. (1976). A subnanosecond integrated switching circuit with MESFET's for LSI. IEEE Journal of Solid-State Circuits. 11(3). 385–394. 10 indexed citations

20.

Arnodo, C., et al.. (1975). MESFET Subnanosecond Integrated Gate for LSI Circuits. European Solid-State Circuits Conference. 110–110. 1 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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