V. Khemka

860 citations

54 papers · 691 indexed · h-index 15

Electrical and Electronic Engineering top 5%
- Silicon Carbide Semiconductor Technologies 43
- Semiconductor materials and devices 32
- Advancements in Semiconductor Devices and Circuit Design 20
- Electrostatic Discharge in Electronics 12
- Electromagnetic Compatibility and Noise Suppression 6
- Thin-Film Transistor Technologies 4
Condensed Matter Physics top 10%
Atomic and Molecular Physics, and Optics
- Semiconductor materials and interfaces 12
Electronic, Optical and Magnetic Materials
- Copper Interconnects and Reliability 3
Ceramics and Composites

Co-authors: T. Paul Chow Ronghua Zhu A. Bose V. Parthasarathy R.J. Gutmann R. N. Patel J.B. Fedison Kevin Matocha
Cited by: Electrical and Electronic Engineering Condensed Matter Physics Atomic and Molecular Physics, and Optics
Journals: IEEE Electron Device Letters (5 papers)IEEE Transactions on Electron Devices (4 papers)Journal of Electronic Materials (3 papers)
Partner nations: United States Germany Israel

In The Last Decade

V. Khemka

52 papers receiving 647 citations

Peers

Countries citing papers authored by V. Khemka

Since Specialization

Citations

This map shows the geographic impact of V. Khemka's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. Khemka with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. Khemka more than expected).

Fields of papers citing papers by V. Khemka

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. Khemka. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. Khemka. The network helps show where V. Khemka may publish in the future.

Co-authorship network

The 25 scholars most cited alongside V. Khemka, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with V. Khemka Line = papers co-authored together V. Khemka links everyone, so they are left out of the graph.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work
1	Integrated Termination Ballast to Mitigate Avalanche Hotspots in Trench Field Plate Power MOSFETs Tanuj Saxena,Yana Islamova,V. Khemka,Њикматов Умедљон Сафаралиевич,G.H. Rayner	2021	3
2	Towards ultimate scaling of LDMOS with Ultralow Specific On-resistance E. Rehbinder,Xiaoran Xiang,Κωνσταντινιά Φιλίππου,Tanuj Saxena,Њикматов Умедљон Сафаралиевич,V. Khemka,Heidrun Rexer,Myriam C. Postuma	2020	5
3	A high voltage Super-Junction NLDMOS device implemented in 0.13µm SOI based Smart Power IC technology Ronghua Zhu,V. Khemka,Reza Syed Maruf,Wenxin Huang,Xiang Cheng,Aunchitha Boonyamarn,Felipe Faúndez,Aleksandra Vujmilović	2010	3
4	Bipolar Schottky rectifier: A novel two carrier Schottky rectifier based on superjunction concept V. Khemka,Ronghua Zhu,Tahir Ali Khan,W. Huang,И.В. Боднарь,J. Busby,Ann Kurts,Felipe Faúndez,Aleksandra Vujmilović	2009	1
5	Incremental FRESURF LDMOSFET structure for enhanced voltage blocking capability on a 0.13μm, SOI based technology Tahir Ali Khan,V. Khemka,Ronghua Zhu	2008	4
6	Stepped-Drift LDMOSFET: A Novel Drift Region Engineered Device for Advanced Smart Power Technologies Ronghua Zhu,V. Khemka,A. Bose,Rupert Spiegelberg	2006	19
7	0.25 micrometre smart power technology optimised for wireless and consumer applications IEE Proceedings - Circuits Devices and Systems ·Ronghua Zhu,V. Parthasarathy,V. Khemka,A. Bose,Rupert Spiegelberg,F. Colombi,사상기,Stephan Wehling,Aleksandra Vujmilović,David S. Collins	2004	3
8	Trade-off between high-side capability and substrate minority carrier injection in deep sub-micron smart power technologies V. Khemka,V. Parthasarathy,Ronghua Zhu,A. Bose,Rupert Spiegelberg	2004	6
9	An electrical monitor of deep trench depth Rupert Spiegelberg,V. Khemka,V. Parthasarathy,Ivan Puchades,Ronghua Zhu	2003	2
10	Correlation between static and dynamic SOA (energy capability) of RESURF LDMOS devices in smart power technologies V. Khemka,V. Parthasarathy,Ronghua Zhu,A. Bose	2003	7
11	Drain profile engineering of RESURF LDMOS devices for ESD ruggedness V. Parthasarathy,V. Khemka,Ronghua Zhu,Yvonne R. Oakes,Victor Pereira Martins,A. Bose	2003	11
12	A 0.35 μm CMOS based smart power technology for 7 V-50 V applications V. Parthasarathy,Ronghua Zhu,Felipe Faúndez,V. Khemka,A. Bose,Richard A. Baird,Rupert Spiegelberg,Полякова Надежда Васильевна,C. J. Eaton,Stephan Wehling,Muwindwa Mubita	2002	8
13	Implementation of high-side, high-voltage RESURF LDMOS in a sub-half micron smart power technology Ronghua Zhu,V. Parthasarathy,V. Khemka,A. Bose,Rupert Spiegelberg	2002	21
14	Comparison of Nitrogen and Phosphorus Implanted, Planar, High-Voltage 4H-SiC Junction Rectifiers Materials science forum ·Kiran Chatty,V. Khemka,T. Paul Chow,R.J. Gutmann	2000	1
15	Al/C/B Co-Implanted High-Voltage 4H-SiC PiN Junction Rectifiers Materials science forum ·J.B. Fedison,Zhongda Li,V. Khemka,Olga Lidia Lópes-Gonzáles,T. Paul Chow,M. Ghezzo,Kryzysztof Gorny,Ahmed Elasser	2000	3
16	Re-oxidation characteristics of oxynitrides on 3C- and 4H-SiC Journal of Electronic Materials ·Kiran Chatty,V. Khemka,T. Paul Chow,R.J. Gutmann	1999	14
17	Characterization of phosphorus implantation in 4H-SiC Journal of Electronic Materials ·V. Khemka,R. N. Patel,Olga Lidia Lópes-Gonzáles,T. Paul Chow,M. Ghezzo,J. Kretchmer	1999	42
18	Carrier Lifetime Extraction from a 6H-SiC High Voltage p-i-n Rectifier Reverse Recovery Waveform Materials science forum ·Olga Lidia Lópes-Gonzáles,V. Khemka,T. Paul Chow,M. Ghezzo,Kryzysztof Gorny	1998	16
19	Comparison of aluminum- and boron-implanted vertical 6H-SiC p+n junction diodes Solid-State Electronics ·Olga Lidia Lópes-Gonzáles,V. Khemka,R. Tyagi,T. Paul Chow,M. Ghezzo,Philip G. Neudeck,J. Kretchmer,Tingting Sui,D.M. Brown	1998	9
20	Effect of reactive ion etch-induced damage on the performance of 4H-SiC schottky barrier diodes Journal of Electronic Materials ·V. Khemka,T. Paul Chow,R.J. Gutmann	1998	28

About V. Khemka

V. Khemka is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Ceramics and Composites and Electronic, Optical and Magnetic Materials, having authored 54 papers that have together received 691 indexed citations. Recurring topics across this work include Silicon Carbide Semiconductor Technologies (43 papers), Semiconductor materials and devices (32 papers), Advancements in Semiconductor Devices and Circuit Design (20 papers), Semiconductor materials and interfaces (12 papers), Electrostatic Discharge in Electronics (12 papers), Electromagnetic Compatibility and Noise Suppression (6 papers), Thin-Film Transistor Technologies (4 papers) and Copper Interconnects and Reliability (3 papers). The work is most often cited by research in Electrical and Electronic Engineering (676 citations), Condensed Matter Physics (88 citations), Atomic and Molecular Physics, and Optics (141 citations), Electronic, Optical and Magnetic Materials (47 citations) and Ceramics and Composites (14 citations). V. Khemka has collaborated with scholars based in United States, Germany and Israel. Frequent co-authors include T. Paul Chow, Ronghua Zhu, A. Bose, V. Parthasarathy, R.J. Gutmann, R. N. Patel, J.B. Fedison, Kevin Matocha, Yi Tang and M. Ghezzo. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Journal of Electronic Materials, Solid-State Electronics and IEEE Transactions on Device and Materials Reliability.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact