V. Khemka

860 total citations
54 papers, 691 citations indexed

About

V. Khemka is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, V. Khemka has authored 54 papers receiving a total of 691 indexed citations (citations by other indexed papers that have themselves been cited), including 54 papers in Electrical and Electronic Engineering, 12 papers in Atomic and Molecular Physics, and Optics and 3 papers in Condensed Matter Physics. Recurrent topics in V. Khemka's work include Silicon Carbide Semiconductor Technologies (43 papers), Semiconductor materials and devices (32 papers) and Advancements in Semiconductor Devices and Circuit Design (20 papers). V. Khemka is often cited by papers focused on Silicon Carbide Semiconductor Technologies (43 papers), Semiconductor materials and devices (32 papers) and Advancements in Semiconductor Devices and Circuit Design (20 papers). V. Khemka collaborates with scholars based in United States, Germany and Israel. V. Khemka's co-authors include T. Paul Chow, Ronghua Zhu, A. Bose, V. Parthasarathy, R.J. Gutmann, R. N. Patel, J.B. Fedison, Kevin Matocha, Yi Tang and M. Ghezzo and has published in prestigious journals such as IEEE Transactions on Electron Devices, IEEE Electron Device Letters and Solid-State Electronics.

In The Last Decade

V. Khemka

52 papers receiving 647 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
V. Khemka United States 15 676 141 88 47 40 54 691
D. Alok United States 13 580 0.9× 202 1.4× 45 0.5× 56 1.2× 41 1.0× 27 594
Jesse B. Tucker United States 8 280 0.4× 78 0.6× 85 1.0× 39 0.8× 43 1.1× 28 330
Tsutomu Yatsuo Japan 15 702 1.0× 111 0.8× 33 0.4× 85 1.8× 27 0.7× 77 715
C. Arnodo France 11 372 0.6× 195 1.4× 45 0.5× 23 0.5× 49 1.2× 23 393
Takafumi Okuda Japan 14 723 1.1× 158 1.1× 30 0.3× 87 1.9× 67 1.7× 63 758
Martin Domeij Sweden 19 1.1k 1.7× 171 1.2× 62 0.7× 69 1.5× 90 2.3× 101 1.2k
Reinhold Schörner Germany 15 781 1.2× 172 1.2× 32 0.4× 91 1.9× 114 2.9× 36 796
Greg Dunne United States 12 793 1.2× 87 0.6× 75 0.9× 133 2.8× 69 1.7× 33 840
Alexander Bolotnikov United States 14 442 0.7× 64 0.5× 29 0.3× 40 0.9× 27 0.7× 36 471
Luigia Lanni Sweden 15 538 0.8× 65 0.5× 35 0.4× 59 1.3× 48 1.2× 33 568

Countries citing papers authored by V. Khemka

Since Specialization
Citations

This map shows the geographic impact of V. Khemka's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. Khemka with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. Khemka more than expected).

Fields of papers citing papers by V. Khemka

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. Khemka. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. Khemka. The network helps show where V. Khemka may publish in the future.

Co-authorship network of co-authors of V. Khemka

This figure shows the co-authorship network connecting the top 25 collaborators of V. Khemka. A scholar is included among the top collaborators of V. Khemka based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with V. Khemka. V. Khemka is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Saxena, Tanuj, et al.. (2020). Towards ultimate scaling of LDMOS with Ultralow Specific On-resistance. 42–45. 5 indexed citations
3.
Zhu, Ronghua, et al.. (2010). A high voltage Super-Junction NLDMOS device implemented in 0.13µm SOI based Smart Power IC technology. 79–82. 3 indexed citations
4.
5.
Khan, Tahir Ali, V. Khemka, & Ronghua Zhu. (2008). Incremental FRESURF LDMOSFET structure for enhanced voltage blocking capability on a 0.13μm, SOI based technology. 279–282. 4 indexed citations
6.
7.
Zhu, Ronghua, et al.. (2004). 0.25 micrometre smart power technology optimised for wireless and consumer applications. IEE Proceedings - Circuits Devices and Systems. 151(3). 198–198. 3 indexed citations
8.
9.
Khemka, V., et al.. (2003). An electrical monitor of deep trench depth. 19–21. 2 indexed citations
10.
Khemka, V., V. Parthasarathy, Ronghua Zhu, & A. Bose. (2003). Correlation between static and dynamic SOA (energy capability) of RESURF LDMOS devices in smart power technologies. 125–128. 7 indexed citations
11.
Parthasarathy, V., et al.. (2003). Drain profile engineering of RESURF LDMOS devices for ESD ruggedness. 265–268. 11 indexed citations
12.
Parthasarathy, V., et al.. (2002). A 0.35 μm CMOS based smart power technology for 7 V-50 V applications. 317–320. 8 indexed citations
13.
14.
Chatty, Kiran, V. Khemka, T. Paul Chow, & R.J. Gutmann. (2000). Comparison of Nitrogen and Phosphorus Implanted, Planar, High-Voltage 4H-SiC Junction Rectifiers. Materials science forum. 338-342. 1331–1334. 1 indexed citations
15.
Fedison, J.B., Zhongda Li, V. Khemka, et al.. (2000). Al/C/B Co-Implanted High-Voltage 4H-SiC PiN Junction Rectifiers. Materials science forum. 338-342. 1367–1370. 3 indexed citations
16.
Chatty, Kiran, V. Khemka, T. Paul Chow, & R.J. Gutmann. (1999). Re-oxidation characteristics of oxynitrides on 3C- and 4H-SiC. Journal of Electronic Materials. 28(3). 161–166. 14 indexed citations
17.
Khemka, V., et al.. (1999). Characterization of phosphorus implantation in 4H-SiC. Journal of Electronic Materials. 28(3). 167–174. 42 indexed citations
18.
Khemka, V., et al.. (1998). Carrier Lifetime Extraction from a 6H-SiC High Voltage p-i-n Rectifier Reverse Recovery Waveform. Materials science forum. 264-268. 1065–1068. 16 indexed citations
19.
Khemka, V., R. Tyagi, T. Paul Chow, et al.. (1998). Comparison of aluminum- and boron-implanted vertical 6H-SiC p+n junction diodes. Solid-State Electronics. 42(1). 17–22. 9 indexed citations
20.
Khemka, V., T. Paul Chow, & R.J. Gutmann. (1998). Effect of reactive ion etch-induced damage on the performance of 4H-SiC schottky barrier diodes. Journal of Electronic Materials. 27(10). 1128–1135. 28 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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