K. Rottner

500 total citations
25 papers, 409 citations indexed

About

K. Rottner is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, K. Rottner has authored 25 papers receiving a total of 409 indexed citations (citations by other indexed papers that have themselves been cited), including 25 papers in Electrical and Electronic Engineering, 9 papers in Atomic and Molecular Physics, and Optics and 4 papers in Materials Chemistry. Recurrent topics in K. Rottner's work include Silicon Carbide Semiconductor Technologies (21 papers), Semiconductor materials and devices (15 papers) and Semiconductor materials and interfaces (8 papers). K. Rottner is often cited by papers focused on Silicon Carbide Semiconductor Technologies (21 papers), Semiconductor materials and devices (15 papers) and Semiconductor materials and interfaces (8 papers). K. Rottner collaborates with scholars based in Sweden, Germany and Austria. K. Rottner's co-authors include Adolf Schöner, N. Nordell, R. Helbig, Stefan Karlsson, Gerhard Pensl, T. Troffer, Carl‐Mikael Zetterling, Mikael Östling, Fanny Dahlquist and Dennis E. Walker and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Crystal Growth.

In The Last Decade

K. Rottner

25 papers receiving 387 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
K. Rottner Sweden 10 399 114 52 51 28 25 409
T. Troffer Germany 8 505 1.3× 142 1.2× 58 1.1× 59 1.2× 53 1.9× 12 514
Akimasa Kinoshita Japan 12 375 0.9× 128 1.1× 43 0.8× 48 0.9× 19 0.7× 40 407
D. Alok United States 13 580 1.5× 202 1.8× 56 1.1× 41 0.8× 30 1.1× 27 594
E. Luckowski United States 9 309 0.8× 164 1.4× 31 0.6× 47 0.9× 10 0.4× 23 324
Ravi Kumar Chanana India 8 807 2.0× 141 1.2× 150 2.9× 65 1.3× 36 1.3× 18 817
T. Dalibor Germany 9 665 1.7× 231 2.0× 88 1.7× 57 1.1× 31 1.1× 17 679
Hervé Peyre France 12 331 0.8× 101 0.9× 98 1.9× 93 1.8× 20 0.7× 55 372
G. Landis United States 11 312 0.8× 120 1.1× 72 1.4× 135 2.6× 13 0.5× 18 365
G. Weidner Germany 10 281 0.7× 72 0.6× 37 0.7× 171 3.4× 12 0.4× 37 315
N.S. Savkina Russia 13 502 1.3× 175 1.5× 50 1.0× 92 1.8× 57 2.0× 76 538

Countries citing papers authored by K. Rottner

Since Specialization
Citations

This map shows the geographic impact of K. Rottner's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by K. Rottner with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites K. Rottner more than expected).

Fields of papers citing papers by K. Rottner

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by K. Rottner. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by K. Rottner. The network helps show where K. Rottner may publish in the future.

Co-authorship network of co-authors of K. Rottner

This figure shows the co-authorship network connecting the top 25 collaborators of K. Rottner. A scholar is included among the top collaborators of K. Rottner based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with K. Rottner. K. Rottner is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Rottner, K., Di Mou, Anne Henry, et al.. (1999). SiC power devices for high voltage applications. Materials Science and Engineering B. 61-62. 330–338. 64 indexed citations
2.
Galeckas, Augustinas, Jan Linnros, K. Rottner, et al.. (1999). Investigation of surface recombination and carrier lifetime in 4H/6H-SiC. Materials Science and Engineering B. 61-62. 239–243. 21 indexed citations
3.
Schöner, Adolf, Stefan Karlsson, Thomas Schmitt, et al.. (1999). Hall effect investigations of 4H–SiC epitaxial layers grown on semi-insulating and conducting substrates. Materials Science and Engineering B. 61-62. 389–394. 17 indexed citations
4.
Capano, M. A., Sei‐Hyung Ryu, James A. Cooper, et al.. (1999). Surface roughening in ion implanted 4H-silicon carbide. Journal of Electronic Materials. 28(3). 214–218. 89 indexed citations
5.
Haug, Christian, et al.. (1999). Determination of hydrogen in 6H–SiC epitaxial layers by the 15N nuclear reaction analysis technique. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 155(1-2). 132–136. 4 indexed citations
6.
Dahlquist, Fanny, Carl‐Mikael Zetterling, Mikael Östling, & K. Rottner. (1998). Junction Barrier Schottky Diodes in 4H-SiC and 6H-SiC. Materials science forum. 264-268. 1061–1064. 40 indexed citations
7.
Nordell, N., Adolf Schöner, K. Rottner, et al.. (1998). Boron implantation and epitaxial regrowth studies of 6H SiC. Journal of Electronic Materials. 27(7). 833–837. 3 indexed citations
8.
Zetterling, Carl‐Mikael, et al.. (1998). Junction barrier Schottky diodes in 6H SiC. Solid-State Electronics. 42(9). 1757–1759. 10 indexed citations
9.
Rottner, K., et al.. (1998). Hot Spots In 4H Sic P+N Diodes Studied By The Optical Beam Induced Current Technique. MRS Proceedings. 512. 5 indexed citations
10.
Karlsson, Stefan, et al.. (1998). High Energy Implantation of Boron in 4H-SiC. MRS Proceedings. 512. 3 indexed citations
11.
Tobias, Peter S., A. Baranzahi, Ingemar Lundström, et al.. (1998). Studies of the Ambient Dependent Inversion of Catalytic Metal - Oxide - Silicon Carbide Devices Based on 6H- and 4H-SiC Material. Materials science forum. 264-268. 1089–1092. 3 indexed citations
12.
Schöner, Adolf, et al.. (1997). Hydrogen incorporation in epitaxial layers of 4H- and 6H-silicon carbide grown by vapor phase epitaxy. Diamond and Related Materials. 6(10). 1293–1296. 11 indexed citations
13.
Rottner, K., Adolf Schöner, Susan Savage, et al.. (1997). 2.5 kV ion-implanted p+ n diodes in 6H-SiC. Diamond and Related Materials. 6(10). 1485–1488. 7 indexed citations
14.
Rottner, K., et al.. (1997). OBIC studies on 6H-SiC Schottky rectifiers with different surface pretreatments. Diamond and Related Materials. 6(10). 1396–1399. 5 indexed citations
15.
Schöner, Adolf, N. Nordell, K. Rottner, R. Helbig, & Gerhard Pensl. (1996). Dependence of the aluminium ionization energy on doping concentration and compensation in 6H-SiC. 493–496. 6 indexed citations
16.
Rottner, K., et al.. (1996). OBIC Measurements on 6H-SiC Schottky Diodes. MRS Proceedings. 423. 4 indexed citations
17.
Schöner, Adolf, K. Rottner, & N. Nordell. (1996). Theory and Realization of a Two-Layer Hall Effect Measurement Concept for Characterization of Epitaxial and Implanted Layers of SiC. MRS Proceedings. 423. 7 indexed citations
18.
Troffer, T., et al.. (1996). Phosphorus-related donors in 6H-SiC generated by ion implantation. Journal of Applied Physics. 80(7). 3739–3743. 65 indexed citations
19.
Rottner, K. & R. Helbig. (1994). Detection of C?H bonds in crystalline ?-SiC by IR-absorption measurements. Applied Physics A. 59(4). 427–429. 6 indexed citations
20.
Rottner, K. & R. Helbig. (1994). Graphite as carbon source in chemical vapor deposition of α-silicon carbide. Journal of Crystal Growth. 144(3-4). 258–266. 13 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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