J. Crofton

961 total citations
24 papers, 772 citations indexed

About

J. Crofton is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Mechanical Engineering. According to data from OpenAlex, J. Crofton has authored 24 papers receiving a total of 772 indexed citations (citations by other indexed papers that have themselves been cited), including 24 papers in Electrical and Electronic Engineering, 16 papers in Atomic and Molecular Physics, and Optics and 9 papers in Mechanical Engineering. Recurrent topics in J. Crofton's work include Silicon Carbide Semiconductor Technologies (22 papers), Semiconductor materials and interfaces (14 papers) and Aluminum Alloys Composites Properties (7 papers). J. Crofton is often cited by papers focused on Silicon Carbide Semiconductor Technologies (22 papers), Semiconductor materials and interfaces (14 papers) and Aluminum Alloys Composites Properties (7 papers). J. Crofton collaborates with scholars based in United States, Netherlands and China. J. Crofton's co-authors include John R. Williams, Michael J. Bozack, Lisa M. Porter, Suzanne E. Mohney, P.G. McMullin, P. A. Barnes, S. Sriram, J. A. Edmond, Tamara Isaacs‐Smith and E. Luckowski and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

J. Crofton

23 papers receiving 739 citations

Peers

Countries citing papers authored by J. Crofton

Since Specialization

Citations

This map shows the geographic impact of J. Crofton's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Crofton with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Crofton more than expected).

Fields of papers citing papers by J. Crofton

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Crofton. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Crofton. The network helps show where J. Crofton may publish in the future.

Co-authorship network of co-authors of J. Crofton

This figure shows the co-authorship network connecting the top 25 collaborators of J. Crofton. A scholar is included among the top collaborators of J. Crofton based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Crofton. J. Crofton is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Nickel Ohmic Contacts to N-Implanted (0001) 4H-SiC 2010 ·Journal of Electronic Materials ·(unknown), A. C. Ahyi, (unknown), (unknown), Tamara Isaacs‐Smith, John R. Williams, J. Crofton	6
2	Ohmic Contacts to P-Type Epitexial and Imlanted 4H-SiC 2006 ·Materials science forum ·J. Crofton, John R. Williams, A. Victor Adedeji, James D. Scofield, Sarit Dhar, L. C. Feldman, Michael J. Bozack	2
3	Liquid-Phase Epitaxial Growth of Heavily Doped Al p-Type Contact Layers for SiC Devices and Resulting Ohmic Contacts 2002 ·Materials science forum ·A. L. Syrkin, V. Dmitriev, O. V. Kovalenkov, (unknown), J. Crofton	10
4	Fabrication procedures and characterization of 6H-SiC MESFETs for use in high temperature electronics 2002 ·Jeff B. Casady, E. Luckowski, Wayne Johnson, J. Crofton, John R. Williams	2
5	Morphological study of the Al–Ti ohmic contact to p-type SiC 2002 ·Solid-State Electronics ·Suzanne E. Mohney, (unknown), (unknown), J. Crofton	36
6	Finding the optimum Al–Ti alloy composition for use as an ohmic contact to p-type SiC 2002 ·Solid-State Electronics ·J. Crofton, Suzanne E. Mohney, John R. Williams, Tamara Isaacs‐Smith	63
7	High temperature ohmic contacts to p-type SiC 2002 ·J. Crofton, (unknown), (unknown), R.R. Siergiej, S. S. Mani, Jeff B. Casady, Tom Oder, John R. Williams, E. Luckowski, Tamara Isaacs‐Smith, Venkatesh Iyer, Suzanne E. Mohney	1
8	Low Resistance Ohmic Contacts to n-SiC Using Niobium 2000 ·Materials science forum ·Tom Oder, John R. Williams, (unknown), Michael J. Bozack, J. Crofton	4
9	Al/Ni And Al/Ti Ohmic Contact To P-type SiC Diffused Layer 2000 ·MRS Proceedings ·(unknown), Stanislav I. Soloviev, (unknown), (unknown), Tangali S. Sudarshan, John R. Williams, J. Crofton	2
10	Searching for Device Processing Compatible Ohmic Contacts to Implanted p-Type 4H-SiC 2000 ·Materials science forum ·(unknown), Feng Yan, K. Tone, Jian Hui Zhao, J. Crofton	11
11	Engineering the Al-Ti/p-SiC Ohmic Contact for Improved Performance 2000 ·MRS Proceedings ·(unknown), Suzanne E. Mohney, (unknown), J. Crofton, John R. Williams, Tamara Isaacs‐Smith	5
12	Refractory metal boride ohmic contacts to P-type 6H-SiC 1998 ·Journal of Electronic Materials ·Tom Oder, John R. Williams, Suzanne E. Mohney, J. Crofton	16
13	Improved ohmic contact to n-type 4H and 6H-SiC using nichrome 1998 ·Journal of Electronic Materials ·E. Luckowski, J. M. DeLucca, John R. Williams, Suzanne E. Mohney, Michael J. Bozack, Tamara Isaacs‐Smith, J. Crofton	20
14	The Physics of Ohmic Contacts to SiC 1997 ·physica status solidi (b) ·J. Crofton, Lisa M. Porter, John R. Williams	154
15	Electrical characterization and charge transport in 6H-SIC MESFET’S 1996 ·AIP conference proceedings ·E. Luckowski, John R. Williams, Jeff B. Casady, Wayne Johnson, J. Crofton	0
16	Improved Nickel Silicide Ohmic Contacts to N-Type 4H and 6H-SiC Using Nichrome 1996 ·MRS Proceedings ·E. Luckowski, John R. Williams, Michael J. Bozack, Tamara Isaacs‐Smith, J. Crofton	10
17	Reverse leakage current calculations for SiC Schottky contacts 1996 ·IEEE Transactions on Electron Devices ·J. Crofton, S. Sriram	55
18	High-temperature ohmic contact to n-type 6H-SiC using nickel 1995 ·Journal of Applied Physics ·J. Crofton, P.G. McMullin, John R. Williams, Michael J. Bozack	158
19	Contact resistance measurements on p-type 6H-SiC 1993 ·Applied Physics Letters ·J. Crofton, P. A. Barnes, John R. Williams, J. A. Edmond	104
20	Quantum mechanical tunneling in an ohmic contact 1992 ·American Journal of Physics ·J. Crofton, P. A. Barnes, Michael J. Bozack	7

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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