X. J. Zhou

424 total citations
10 papers, 264 citations indexed

About

X. J. Zhou is a scholar working on Electrical and Electronic Engineering, Ceramics and Composites and Infectious Diseases. According to data from OpenAlex, X. J. Zhou has authored 10 papers receiving a total of 264 indexed citations (citations by other indexed papers that have themselves been cited), including 10 papers in Electrical and Electronic Engineering, 1 paper in Ceramics and Composites and 0 papers in Infectious Diseases. Recurrent topics in X. J. Zhou's work include Semiconductor materials and devices (10 papers), Advancements in Semiconductor Devices and Circuit Design (9 papers) and Radiation Effects in Electronics (4 papers). X. J. Zhou is often cited by papers focused on Semiconductor materials and devices (10 papers), Advancements in Semiconductor Devices and Circuit Design (9 papers) and Radiation Effects in Electronics (4 papers). X. J. Zhou collaborates with scholars based in United States, France and Greece. X. J. Zhou's co-authors include Daniel M. Fleetwood, Ronald D. Schrimpf, J. Félix, E. P. Gusev, C. D’Emic, Leonidas Tsetseris, S. Cristoloveanu, Enrique Montes, Sokrates T. Pantelides and Iskander G. Batyrev and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Nuclear Science and Microelectronics Reliability.

In The Last Decade

X. J. Zhou

10 papers receiving 257 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
X. J. Zhou United States	6	255	24	21	16	8	10	264
A. Michez France	11	468 1.8×	37 1.5×	14 0.7×	25 1.6×	6 0.8×	39	499
John M. Hutson United States	11	391 1.5×	29 1.2×	6 0.3×	62 3.9×	4 0.5×	19	404
S. Rangan United States	7	322 1.3×	19 0.8×	16 0.8×	22 1.4×	2 0.3×	12	323
M. Simons United States	13	333 1.3×	30 1.3×	28 1.3×	17 1.1×	8 1.0×	30	343
Jan-Erik Mueller Germany	10	335 1.3×	24 1.0×	37 1.8×	5 0.3×	6 0.8×	34	348
M. DeLaus United States	7	675 2.6×	37 1.5×	22 1.0×	28 1.8×	4 0.5×	13	680
B.M. Haugerud United States	11	331 1.3×	18 0.8×	45 2.1×	19 1.2×	5 0.6×	18	342
P. Scheer France	11	374 1.5×	22 0.9×	53 2.5×	8 0.5×	8 1.0×	43	390
J. Malinowski United States	9	306 1.2×	15 0.6×	26 1.2×	11 0.7×	8 1.0×	30	318
Chengfa He China	10	188 0.7×	68 2.8×	17 0.8×	22 1.4×	3 0.4×	46	246

Countries citing papers authored by X. J. Zhou

Since Specialization

Citations

This map shows the geographic impact of X. J. Zhou's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by X. J. Zhou with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites X. J. Zhou more than expected).

Fields of papers citing papers by X. J. Zhou

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by X. J. Zhou. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by X. J. Zhou. The network helps show where X. J. Zhou may publish in the future.

Co-authorship network of co-authors of X. J. Zhou

This figure shows the co-authorship network connecting the top 25 collaborators of X. J. Zhou. A scholar is included among the top collaborators of X. J. Zhou based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with X. J. Zhou. X. J. Zhou is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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10 of 10 papers shown

Rosa, Giuseppe La, Suresh Uppal, William E. McMahon, et al.. (2013). Impact of hydrogen in capping layers on BTI degradation and recovery in high-κ replacement metal gate transistors. PI.3.1–PI.3.5. 2 indexed citations

Pantelides, Sokrates T., Leonidas Tsetseris, Matthew J. Beck, et al.. (2009). Performance, reliability, radiation effects, and aging issues in microelectronics — from atomic-scale physics to engineering-level modeling. 38. 76–83. 2 indexed citations

Pantelides, Sokrates T., Leonidas Tsetseris, Matthew J. Beck, et al.. (2009). Performance, reliability, radiation effects, and aging issues in microelectronics - from atomic-scale physics to engineering-level modeling. DSpace - NTUA (National Technical University of Athens). 38. 48–55. 2 indexed citations

Schrimpf, Ronald D., Kevin M. Warren, Robert A. Weller, et al.. (2008). Reliability and radiation effects in IC technologies. DSpace - NTUA (National Technical University of Athens). 97–106. 33 indexed citations

Zhou, X. J., Ronald D. Schrimpf, Daniel M. Fleetwood, et al.. (2007). Total Dose and Bias Temperature Stress Effects for HfSiON on Si MOS Capacitors. IEEE Transactions on Nuclear Science. 54(6). 1931–1937. 16 indexed citations

Fleetwood, Daniel M., Martin Rodgers, Leonidas Tsetseris, et al.. (2006). Effects of Device Aging on Microelectronics Radiation Response and Reliability. DSpace - NTUA (National Technical University of Athens). 84. 84–91. 2 indexed citations

Fleetwood, Daniel M., Martin Rodgers, Leonidas Tsetseris, et al.. (2006). Effects of device aging on microelectronics radiation response and reliability. Microelectronics Reliability. 47(7). 1075–1085. 33 indexed citations

Zhou, X. J., Daniel M. Fleetwood, J. Félix, E. P. Gusev, & C. D’Emic. (2005). Bias-temperature instabilities and radiation effects in MOS devices. IEEE Transactions on Nuclear Science. 52(6). 2231–2238. 72 indexed citations

Zhou, X. J., Leonidas Tsetseris, Sergey N. Rashkeev, et al.. (2004). Negative bias-temperature instabilities in metal–oxide–silicon devices with SiO2 and SiOxNy/HfO2 gate dielectrics. Applied Physics Letters. 84(22). 4394–4396. 33 indexed citations

10.

Fleetwood, Daniel M., et al.. (2003). Charge separation techniques for irradiated pseudo-MOS SOI transistors. IEEE Transactions on Nuclear Science. 50(6). 1891–1895. 69 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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