M. Allenspach

591 total citations
15 papers, 516 citations indexed

About

M. Allenspach is a scholar working on Electrical and Electronic Engineering, Radiation and Aerospace Engineering. According to data from OpenAlex, M. Allenspach has authored 15 papers receiving a total of 516 indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Electrical and Electronic Engineering, 1 paper in Radiation and 1 paper in Aerospace Engineering. Recurrent topics in M. Allenspach's work include Radiation Effects in Electronics (15 papers), Semiconductor materials and devices (13 papers) and Advancements in Semiconductor Devices and Circuit Design (8 papers). M. Allenspach is often cited by papers focused on Radiation Effects in Electronics (15 papers), Semiconductor materials and devices (13 papers) and Advancements in Semiconductor Devices and Circuit Design (8 papers). M. Allenspach collaborates with scholars based in United States and France. M. Allenspach's co-authors include Ronald D. Schrimpf, K.F. Galloway, J.R. Brews, C.F. Wheatley, J.L. Titus, R.L. Pease, D.I. Burton, G.H. Johnson, C. Dachs and P. Calvel and has published in prestigious journals such as IEEE Electron Device Letters, IEEE Transactions on Nuclear Science and Microelectronics Reliability.

In The Last Decade

M. Allenspach

15 papers receiving 486 citations

Peers

Countries citing papers authored by M. Allenspach

Since Specialization

Citations

This map shows the geographic impact of M. Allenspach's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Allenspach with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Allenspach more than expected).

Fields of papers citing papers by M. Allenspach

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Allenspach. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Allenspach. The network helps show where M. Allenspach may publish in the future.

Co-authorship network of co-authors of M. Allenspach

This figure shows the co-authorship network connecting the top 25 collaborators of M. Allenspach. A scholar is included among the top collaborators of M. Allenspach based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Allenspach. M. Allenspach is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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15 of 15 papers shown

#	Work	Indexed citations
1	Neutron Induced Single Event Upset (SEU) Testing of Commercial Flash Memory Devices with and without Embedded Error Correction Codes (ECC) 2019 ·M. Allenspach, (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown)	1
2	Experimental evidence of the temperature and angular dependence in SEGR [power MOSFETs] 2002 ·(unknown), M.-C. Calvet, P. Calvel, (unknown), M. Allenspach, Kenneth A. LaBel, J.L. Titus, C.F. Wheatley, Ronald D. Schrimpf, K.F. Galloway	1
3	Prediction and hardening techniques for SEGR in power MOSFET devices 1997 ·UA Campus Repository (The University of Arizona) ·M. Allenspach	1
4	Influence of ion beam energy on SEGR failure thresholds of vertical power MOSFETs 1996 ·IEEE Transactions on Nuclear Science ·J.L. Titus, C.F. Wheatley, M. Allenspach, Ronald D. Schrimpf, D.I. Burton, J.R. Brews, K.F. Galloway, R.L. Pease	41
5	Measurement of a cross-section for single-event gate rupture in power MOSFETs 1996 ·IEEE Electron Device Letters ·(unknown), P. Calvel, M. Allenspach, J.L. Titus, C.F. Wheatley, Kenneth A. LaBel, M.-C. Calvet, Ronald D. Schrimpf, K.F. Galloway	25
6	Experimental evidence of the temperature and angular dependence in SEGR [power MOSFET] 1996 ·IEEE Transactions on Nuclear Science ·(unknown), M.-C. Calvet, P. Calvel, (unknown), M. Allenspach, Kenneth A. LaBel, J.L. Titus, C.F. Wheatley, Ronald D. Schrimpf, K.F. Galloway	16
7	SEGR: A unique failure mode for power MOSFETs in spacecraft 1996 ·Microelectronics Reliability ·M. Allenspach, J.R. Brews, K.F. Galloway, G.H. Johnson, Ronald D. Schrimpf, R.L. Pease, J.L. Titus, C.F. Wheatley	11
8	A physical interpretation for the single-event-gate-rupture cross-section of n-channel power MOSFETs 1996 ·IEEE Transactions on Nuclear Science ·G.H. Johnson, K.F. Galloway, Ronald D. Schrimpf, J.L. Titus, C.F. Wheatley, M. Allenspach, C. Dachs	19
9	SEGR and SEB in n-channel power MOSFETs 1996 ·IEEE Transactions on Nuclear Science ·M. Allenspach, C. Dachs, G.H. Johnson, Ronald D. Schrimpf, E. Lorfèvre, J.M. Palau, J.R. Brews, K.F. Galloway, J.L. Titus, C.F. Wheatley	78
10	(Single-Event Gate-Rupture in Power MOSFETs: Prediction of Breakdown Biases and Evaluation of Oxide 1995 ·IEEE Transactions on Nuclear Science ·J.R. Brews, M. Allenspach, (unknown), J.L. Titus, C.F. Wheatley, R.L. Pease, (unknown), (unknown)	11
11	Single-event gate-rupture in power MOSFETs: prediction of breakdown biases and evaluation of oxide thickness dependence 1995 ·IEEE Transactions on Nuclear Science ·M. Allenspach, (unknown), J.L. Titus, C.F. Wheatley, R.L. Pease, J.R. Brews, Ronald D. Schrimpf, K.F. Galloway	65
12	Impact of oxide thickness on SEGR failure in vertical power MOSFETs; development of a semi-empirical expression 1995 ·IEEE Transactions on Nuclear Science ·J.L. Titus, C.F. Wheatley, D.I. Burton, (unknown), M. Allenspach, J.R. Brews, Ronald D. Schrimpf, K.F. Galloway, R.L. Pease	75
13	Temperature and angular dependence of substrate response in SEGR [power MOSFET] 1994 ·IEEE Transactions on Nuclear Science ·(unknown), M. Allenspach, Ronald D. Schrimpf, J.R. Brews, K.F. Galloway, P. Calvel	35
14	Evaluation of SEGR threshold in power MOSFETs 1994 ·IEEE Transactions on Nuclear Science ·M. Allenspach, J.R. Brews, (unknown), Ronald D. Schrimpf, K.F. Galloway	57
15	A conceptual model of a single-event gate-rupture in power MOSFETs 1993 ·IEEE Transactions on Nuclear Science ·J.R. Brews, M. Allenspach, Ronald D. Schrimpf, K.F. Galloway, J.L. Titus, C.F. Wheatley	80

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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