G.H. Johnson
Impact in
-
- Radiation Effects in Electronics
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Electrostatic Discharge in Electronics
- Silicon Carbide Semiconductor Technologies
- Low-power high-performance VLSI design
- Hardware and Architecture top 10%
- VLSI and Analog Circuit Testing
Papers in
-
- Radiation Effects in Electronics 13
- Advancements in Semiconductor Devices and Circuit Design 13
- Semiconductor materials and devices 10
- Integrated Circuits and Semiconductor Failure Analysis 5
- Electrostatic Discharge in Electronics 4
-
- VLSI and Analog Circuit Testing 2
- Co-authors
- Ronald D. SchrimpfK.F. GallowayC. DachsJ.M. PalauJ.L. TitusR. KogaR.L. PeaseC.F. Wheatley
- Journals
- IEEE Transactions on Nuclear Science (7 papers)Quality and Reliability Engineering International (1 paper)Applied Physics Letters (1 paper)IEEE Transactions on Electron Devices (1 paper)Microelectronics Reliability (1 paper)
- Partner nations
- United StatesFrance
In The Last Decade
G.H. Johnson
20 papers receiving 510 citations
Peers
Comparison fields: 5 of 32
- Electrical and Electronic Engineering 529
- Hardware and Architecture 60
- Nuclear Energy and Engineering 4
- Automotive Engineering 18
- Radiation 12
Countries citing papers authored by G.H. Johnson
This map shows the geographic impact of G.H. Johnson's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G.H. Johnson with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G.H. Johnson more than expected).
Fields of papers citing papers by G.H. Johnson
This network shows the impact of papers produced by G.H. Johnson. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G.H. Johnson. The network helps show where G.H. Johnson may publish in the future.
Co-authorship network
The 18 scholars most cited alongside G.H. Johnson, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.
All Works
| # | Work | ||
|---|---|---|---|
| 1 | ISS: U.S. National Laboratory | 2018 | 1 |
| 2 | 2002 | 6 | |
| 3 | 2002 | 5 | |
| 4 | 2002 | 5 | |
| 5 | 1996 | 5 | |
| 6 | 1996 | 101 | |
| 7 | 1996 | 11 | |
| 8 | 1996 | 19 | |
| 9 | 1996 | 78 | |
| 10 | 1995 | 93 | |
| 11 | 1995 | 5 | |
| 12 | Temperature dependence of single-event burnout in n-channel power MOSFET's | 1994 | 1 |
| 13 | 1994 | 9 | |
| 14 | 1993 | 86 | |
| 15 | 1992 | 57 | |
| 16 | Analytical modeling of single-event burnout of power transistors. | 1992 | 2 |
| 17 | 1991 | 41 | |
| 18 | Features of a heavy-ion-generated-current filament used in modeling single-event burnout of power MOSFETs | 1990 | 9 |
| 19 | 1988 | 10 | |
| 20 | 1953 | 2 |
About G.H. Johnson
G.H. Johnson is a scholar working on Electrical and Electronic Engineering, Hardware and Architecture, Atomic and Molecular Physics, and Optics, Astronomy and Astrophysics and Cellular and Molecular Neuroscience, having authored 20 papers that have together received 546 indexed citations. Recurring topics across this work include Radiation Effects in Electronics (13 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers), Semiconductor materials and devices (10 papers), Integrated Circuits and Semiconductor Failure Analysis (5 papers), Electrostatic Discharge in Electronics (4 papers), VLSI and Analog Circuit Testing (2 papers), Gyrotron and Vacuum Electronics Research (1 paper) and Planetary Science and Exploration (1 paper). The work is most often cited by research in Electrical and Electronic Engineering (529 citations), Hardware and Architecture (60 citations), Nuclear Energy and Engineering (4 citations), Automotive Engineering (18 citations) and Radiation (12 citations). G.H. Johnson has collaborated with scholars based in United States and France. Frequent co-authors include Ronald D. Schrimpf, K.F. Galloway, C. Dachs, J.M. Palau, J.L. Titus, R. Koga, R.L. Pease, C.F. Wheatley, M. Allenspach and Daniel M. Fleetwood. Their work appears in journals such as IEEE Transactions on Nuclear Science, Quality and Reliability Engineering International, Applied Physics Letters, IEEE Transactions on Electron Devices and Microelectronics Reliability.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.