C.F. Wheatley

1.2k total citations
45 papers, 1.0k citations indexed

About

C.F. Wheatley is a scholar working on Electrical and Electronic Engineering, Mechanical Engineering and Industrial and Manufacturing Engineering. According to data from OpenAlex, C.F. Wheatley has authored 45 papers receiving a total of 1.0k indexed citations (citations by other indexed papers that have themselves been cited), including 42 papers in Electrical and Electronic Engineering, 2 papers in Mechanical Engineering and 2 papers in Industrial and Manufacturing Engineering. Recurrent topics in C.F. Wheatley's work include Semiconductor materials and devices (32 papers), Radiation Effects in Electronics (26 papers) and Advancements in Semiconductor Devices and Circuit Design (22 papers). C.F. Wheatley is often cited by papers focused on Semiconductor materials and devices (32 papers), Radiation Effects in Electronics (26 papers) and Advancements in Semiconductor Devices and Circuit Design (22 papers). C.F. Wheatley collaborates with scholars based in United States and France. C.F. Wheatley's co-authors include J.L. Titus, D.I. Burton, Ronald D. Schrimpf, K.F. Galloway, M. Allenspach, J.R. Brews, R.L. Pease, G.H. Johnson, C. Dachs and A.B. Campbell and has published in prestigious journals such as IEEE Transactions on Power Electronics, IEEE Transactions on Electron Devices and SAE technical papers on CD-ROM/SAE technical paper series.

In The Last Decade

C.F. Wheatley

41 papers receiving 956 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
C.F. Wheatley United States 19 1.0k 96 32 31 23 45 1.0k
G.H. Johnson United States 10 529 0.5× 60 0.6× 18 0.6× 14 0.5× 11 0.5× 20 546
M. Gehlhausen United States 9 460 0.5× 34 0.4× 19 0.6× 8 0.3× 9 0.4× 11 479
C.R. Cirba United States 14 572 0.6× 44 0.5× 16 0.5× 9 0.3× 5 0.2× 23 576
K. Lilja United States 14 589 0.6× 315 3.3× 11 0.3× 18 0.6× 16 0.7× 37 609
E.W. Enlow United States 7 544 0.5× 40 0.4× 10 0.3× 11 0.4× 5 0.2× 12 560
C. Chatry France 10 284 0.3× 58 0.6× 17 0.5× 12 0.4× 9 0.4× 20 314
S.L. Kosier United States 11 804 0.8× 29 0.3× 13 0.4× 18 0.6× 4 0.2× 31 810
Mark C. Hakey United States 6 355 0.4× 74 0.8× 8 0.3× 7 0.2× 10 0.4× 11 380
A.Y. Nikiforov Russia 13 359 0.4× 65 0.7× 6 0.2× 30 1.0× 11 0.5× 48 386
M. DeLaus United States 7 675 0.7× 28 0.3× 11 0.3× 9 0.3× 4 0.2× 13 680

Countries citing papers authored by C.F. Wheatley

Since Specialization
Citations

This map shows the geographic impact of C.F. Wheatley's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by C.F. Wheatley with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites C.F. Wheatley more than expected).

Fields of papers citing papers by C.F. Wheatley

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by C.F. Wheatley. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by C.F. Wheatley. The network helps show where C.F. Wheatley may publish in the future.

Co-authorship network of co-authors of C.F. Wheatley

This figure shows the co-authorship network connecting the top 25 collaborators of C.F. Wheatley. A scholar is included among the top collaborators of C.F. Wheatley based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with C.F. Wheatley. C.F. Wheatley is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Wheatley, C.F., et al.. (2002). Power MOSFETs hardened for single event effects (SEE) in space. 253–257. 5 indexed citations
2.
Calvet, M.-C., P. Calvel, M. Allenspach, et al.. (2002). Experimental evidence of the temperature and angular dependence in SEGR [power MOSFETs]. 313–320. 1 indexed citations
3.
Titus, Jeffrey L., et al.. (2001). A Study of Ion Energy and Its Effects Upon an SEGR-Hardened Stripe-Cell MOSFET Technology. 7 indexed citations
4.
Savage, M.W., et al.. (2001). An improved stripe-cell SEGR hardened power MOSFET technology. IEEE Transactions on Nuclear Science. 48(6). 1872–1878. 23 indexed citations
5.
Wheatley, C.F., et al.. (2001). Early lethal SEGR failures of VDMOSFETs considering nonuniformity in the rad-hard device distribution. IEEE Transactions on Nuclear Science. 48(6). 2217–2221. 11 indexed citations
6.
Titus, J.L., C.F. Wheatley, D.I. Burton, et al.. (1999). Prediction of early lethal SEGR failures of VDMOSFETs for commercial space systems'. IEEE Transactions on Nuclear Science. 46(6). 1640–1651. 23 indexed citations
7.
Titus, J.L., et al.. (1998). Effect of ion energy upon dielectric breakdown of the capacitor response in vertical power MOSFETs. IEEE Transactions on Nuclear Science. 45(6). 2492–2499. 68 indexed citations
8.
Titus, J.L., C.F. Wheatley, M. Allenspach, et al.. (1996). Influence of ion beam energy on SEGR failure thresholds of vertical power MOSFETs. IEEE Transactions on Nuclear Science. 43(6). 2938–2943. 41 indexed citations
9.
Calvel, P., M. Allenspach, J.L. Titus, et al.. (1996). Measurement of a cross-section for single-event gate rupture in power MOSFETs. IEEE Electron Device Letters. 17(4). 163–165. 25 indexed citations
10.
Calvet, M.-C., P. Calvel, M. Allenspach, et al.. (1996). Experimental evidence of the temperature and angular dependence in SEGR [power MOSFET]. IEEE Transactions on Nuclear Science. 43(3). 936–943. 16 indexed citations
11.
Brews, J.R., et al.. (1995). (Single-Event Gate-Rupture in Power MOSFETs: Prediction of Breakdown Biases and Evaluation of Oxide. IEEE Transactions on Nuclear Science. 42(6). 1922. 11 indexed citations
12.
Brews, J.R., M. Allenspach, Ronald D. Schrimpf, et al.. (1993). A conceptual model of a single-event gate-rupture in power MOSFETs. IEEE Transactions on Nuclear Science. 40(6). 1959–1966. 80 indexed citations
13.
Wheatley, C.F., et al.. (1986). Circuit influences on COMFET™ (IGT) dynamic latching current. 73–80. 1 indexed citations
14.
Wheatley, C.F., et al.. (1986). Applications of COMFETS (IGT) to 40 kHZ off-line switcher. 1–7. 2 indexed citations
15.
Wheatley, C.F. & W. Einthoven. (1976). On the proportioning of chip area for multistage Darlington power transistors. IEEE Transactions on Electron Devices. 23(8). 870–878. 6 indexed citations
16.
Wheatley, C.F.. (1974). Integrated Solid-State Devices. SAE technical papers on CD-ROM/SAE technical paper series. 1. 1 indexed citations
17.
Wheatley, C.F.. (1967). An AC/DC Line-Operated Transistorized TV Receiver. IEEE Transactions on Broadcast and Television Receivers. 13(1). 9–23. 2 indexed citations
18.
Wheatley, C.F.. (1965). Destructive Circuit Malfunctions and Corrective Techniques in Horizontal Deflection. IEEE Transactions on Broadcast and Television Receivers. 11(2). 102–111. 4 indexed citations
19.
Wheatley, C.F., et al.. (1963). A 19-inch, 114-degree, line-operated all-transistor TV receiver. IEEE Transactions on Broadcast and Television Receivers. BTR-9(2). 62–71.
20.
Wheatley, C.F., et al.. (1961). An Ultra-Low-Distortion Transistorized Power Amplifier. BTR-7(2). 81–87. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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