John Borland

661 citations

70 papers · 490 indexed · h-index 9

Impact in

Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon and Solar Cell Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Thin-Film Transistor Technologies
Structural Biology

Papers in ⓘ

Electrical and Electronic Engineering 64
- Semiconductor materials and devices 35
- Silicon and Solar Cell Technologies 32
- Integrated Circuits and Semiconductor Failure Analysis 27
- Advancements in Semiconductor Devices and Circuit Design 13
- Thin-Film Transistor Technologies 11
Atomic and Molecular Physics, and Optics 13
- Semiconductor materials and interfaces 12

Co-authors: Michael Current (5 shared papers)O. W. Holland (2 shared papers)J. W. Mayer (2 shared papers)J. M. Poate (2 shared papers)Eric Chason (2 shared papers)A.F. Tasch (2 shared papers)T. Dı́az de la Rubia (2 shared papers)J. Melngailis (2 shared papers)
Journals: Journal of The Electrochemical Society (2 papers)Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms (2 papers)Journal of materials research/Pratt's guide to venture capital sources (1 paper)Journal of Applied Physics (1 paper)Thin Solid Films (1 paper)
Partner nations: United States Japan Taiwan

In The Last Decade

John Borland

56 papers receiving 440 citations

Peers

Countries citing papers authored by John Borland

Since Specialization

Citations

This map shows the geographic impact of John Borland's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by John Borland with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites John Borland more than expected).

Fields of papers citing papers by John Borland

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by John Borland. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by John Borland. The network helps show where John Borland may publish in the future.

Co-authors

The 25 scholars most cited alongside John Borland, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with John Borland Line = papers co-authored together John Borland links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 70 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Ion beams in silicon processing and characterization Journal of Applied Physics ·Eric Chason, S. T. Picraux, J. M. Poate, John Borland, Michael Current, T. Dı́az de la Rubia, D. J. Eaglesham, O. W. Holland, Mark E. Law, C. W. Magee, J. W. Mayer, J. Melngailis, A.F. Tasch	1997	213
2	Properties of chemical-vapor-deposited titanium nitride Thin Solid Films ·J.B. Price, John Borland, S. C. Selbrede	1993	74
3	Cluster Ion Implantation System: Claris for Beyond 45nm Device Fabrication (Ii) ECS Transactions ·Masayasu Tanjyo, Nariaki Hamamoto, Tsutomu Nagayama, S. Umisedo, Yuji Koga, Noriaki Maehara, H. Une, Takao Matsumoto, Nobuo Nagai, John Borland	2009	14
4	Low Temperature Shallow Junction Formation For 70nm Technology Node And Beyond MRS Proceedings ·John Borland	2002	13
5	Surface planarity and microstructure of low temperature silicon SEG and ELO Journal of materials research/Pratt's guide to venture capital sources ·M. Arst, K. N. Ritz, S. Redkar, John Borland, Julius Hann, J.T. Chen	1991	12
6	Hillock defects in InGaAs/InP multi-layers grown by MBE Journal of Crystal Growth ·H. Saito, John Borland, H. Asahi, Haruo Nagai, Kiyoshi Nawata	1983	10
7	Novel device structures by selective epitaxial growth (SEG) John Borland	1987	9
8	Ultra-shallow junction (USJ) sheet resistance measurements with a non-penetrating four point probe Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ·Mark C. Benjamin, Robert Hillard, John Borland	2005	9
9	Reaction kinetics of SiO 2 /Si(100) interface in H 2 ambient in a reduced pressure epitaxial reactor. Liu S T, Lap Ki Chan, John Borland	1987	8
10	45nm Node p+ USJ Formation With High Dopant Activation And Low Damage John Borland, S. Shishiguchi, A. Mineji, W. Krull, D. C. Jacobson, Masayasu Tanjyo, W. Lerch, S. Paul, J. Gelpey, S. McCoy, J. Venturini, M. Current, Vladimir Faifer, Robert Hillard, Mark C. Benjamin, Tom Walker, A. Buczkowski, Zhiqiang Li, J. Chen	2006	7
11	ULSI Quality Silicon Epitaxial Growth at 850°C Journal of The Electrochemical Society ·V. J. Silvestri, Karen Nummy, Paul Ronsheim, R. Bendernagel, D. R. Kerr, Viet-Phong Phan, John Borland, Julius Hann	1990	7
12	Optimized BF<sub>3</sub> P<sup>2</sup> LAD implantation with Si-PAI for shallow, abrupt and high quality p<sup>+</sup>/n junctions formed using low temperature SPE annealing Susan B. Felch, John Borland, Ziwie Fang Ziwie Fang, Bon-Woong Koo, H.-J. Gossmann, K. S. Jones, C. D. Lindfors	2002	5
13	Accurate determination of ultra-shallow junction sheet resistance with a non-penetrating four point probe Robert Hillard, John Borland, C. Win Ye	2004	4
14	Molecular Dopants and High Mass Dopants for HALO and Extension Implantation A. Mineji, John Borland, S. Shishiguchi, M. Hane, Masayasu Tanjyo, Tsutomu Nagayama	2007	4
15	Strain evaluation in Ge and Sn implanted Si layers with laser and rapid thermal annealing Materials Science in Semiconductor Processing ·Shota Komago, Ryo Yokogawa, Kazutoshi Yoshioka, John Borland, T. Kuroi, Yoji Kawasaki, Atsushi Ogura	2020	4
16	Reducing the Temperature of Conventional Silicon Epitaxy for Selective Poly‐Epi Growth Journal of The Electrochemical Society ·Ido Rahat, J. Shappir, David B. Fraser, Jun Wei, John Borland, I. Beinglass	1991	4
17	Using dopant activation of implanted wafers for low temperature (400°C-600°C) measurement in CVD equipment design John Borland, C. Galewski	2002	4
18	Comparison of B, BF[sub 2] & B[sub 18]H[sub 22] for Extension and BF[sub 2], B[sub 18]H[sub 22] & In HALO Implantation for 32 nm Node Using Various Diffusion-less Annealing Techniques AIP conference proceedings ·John Borland, Hiroki Kiyama, Edmund G. Seebauer, Susan B. Felch, Amitabh Jain, Yevgeniy V. Kondratenko	2008	4
19	Boosting Ge-Epi P-Well Mobility & Crystal Quality with Si or Sn Implantation and Melt Annealing ECS Transactions ·John Borland, Shang-Shuin Chaung, Tseung‐Yuen Tseng, Abhijeet Joshi, Bülent M. Başol, Yao Jen Lee, T. Kuroi, Toshiyuki Tabata, Karim Huet, Gary Goodman, Nadya Khapochkina, Temel Büyüklimanli	2018	3
20	(Invited) Smartphones: Driving Technology to More than Moore 3-D Stacked Devices/Chips and More Moore FinFET 3-D Doping with High Mobility Channel Materials from 20/22nm Production to 5/7nm Exploratory Research ECS Transactions ·John Borland	2015	3

About John Borland

John Borland is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Biomedical Engineering, Materials Chemistry and Computational Mechanics, having authored 70 papers that have together received 490 indexed citations. Recurring topics across this work include Semiconductor materials and devices (35 papers), Silicon and Solar Cell Technologies (32 papers), Integrated Circuits and Semiconductor Failure Analysis (27 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers), Semiconductor materials and interfaces (12 papers), Thin-Film Transistor Technologies (11 papers), Advanced Surface Polishing Techniques (6 papers) and Ion-surface interactions and analysis (5 papers). The work is most often cited by research in Electrical and Electronic Engineering (372 citations), Structural Biology (9 citations), Computational Mechanics (123 citations), Mechanics of Materials (90 citations) and Atomic and Molecular Physics, and Optics (99 citations). John Borland has collaborated with scholars based in United States, Japan and Taiwan. Frequent co-authors include Michael Current, O. W. Holland, J. W. Mayer, J. M. Poate, Eric Chason, A.F. Tasch, T. Dı́az de la Rubia, J. Melngailis, S. T. Picraux and C. W. Magee. Their work appears in journals such as Journal of The Electrochemical Society, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms, Journal of materials research/Pratt's guide to venture capital sources, Journal of Applied Physics and Thin Solid Films.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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