G. Ghibaudo

666 total citations
14 papers, 501 citations indexed

About

G. Ghibaudo is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, G. Ghibaudo has authored 14 papers receiving a total of 501 indexed citations (citations by other indexed papers that have themselves been cited), including 13 papers in Electrical and Electronic Engineering, 2 papers in Atomic and Molecular Physics, and Optics and 2 papers in Biomedical Engineering. Recurrent topics in G. Ghibaudo's work include Advancements in Semiconductor Devices and Circuit Design (10 papers), Semiconductor materials and devices (9 papers) and Integrated Circuits and Semiconductor Failure Analysis (4 papers). G. Ghibaudo is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (10 papers), Semiconductor materials and devices (9 papers) and Integrated Circuits and Semiconductor Failure Analysis (4 papers). G. Ghibaudo collaborates with scholars based in France, Italy and United States. G. Ghibaudo's co-authors include T. Boutchacha, R. Clerc, G. Pananakakis, R. Gwoziecki, C.A. Dimitriadis, D.H. Tassis, A. Tsormpatzoglou, Stéphane Altazin, E.G. Ioannidis and Quentin Rafhay and has published in prestigious journals such as Applied Physics Letters, IEEE Transactions on Electron Devices and Solid-State Electronics.

In The Last Decade

G. Ghibaudo

12 papers receiving 488 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
G. Ghibaudo France 9 478 71 36 36 31 14 501
Juin J. Liou United States 10 518 1.1× 70 1.0× 42 1.2× 49 1.4× 74 2.4× 35 568
Oana Moldovan Spain 13 525 1.1× 83 1.2× 52 1.4× 112 3.1× 16 0.5× 29 559
Cem Alper Switzerland 12 453 0.9× 112 1.6× 67 1.9× 38 1.1× 7 0.2× 33 469
Ching-Sung Ho China 6 268 0.6× 43 0.6× 16 0.4× 33 0.9× 11 0.4× 7 284
N. Shen Singapore 10 404 0.8× 139 2.0× 33 0.9× 31 0.9× 25 0.8× 15 442
Anubha Goel India 10 407 0.9× 171 2.4× 24 0.7× 35 1.0× 22 0.7× 28 448
Antonios Bazigos Switzerland 11 378 0.8× 104 1.5× 81 2.3× 73 2.0× 9 0.3× 39 411
Ghader Darbandy Germany 12 394 0.8× 91 1.3× 22 0.6× 59 1.6× 5 0.2× 51 418
J. De Blauwe Belgium 9 469 1.0× 42 0.6× 56 1.6× 209 5.8× 9 0.3× 17 492
Annie Kumar Singapore 12 351 0.7× 77 1.1× 42 1.2× 109 3.0× 7 0.2× 27 367

Countries citing papers authored by G. Ghibaudo

Since Specialization
Citations

This map shows the geographic impact of G. Ghibaudo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Ghibaudo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Ghibaudo more than expected).

Fields of papers citing papers by G. Ghibaudo

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Ghibaudo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Ghibaudo. The network helps show where G. Ghibaudo may publish in the future.

Co-authorship network of co-authors of G. Ghibaudo

This figure shows the co-authorship network connecting the top 25 collaborators of G. Ghibaudo. A scholar is included among the top collaborators of G. Ghibaudo based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Ghibaudo. G. Ghibaudo is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

14 of 14 papers shown
1.
Cluzel, J., Jean‐Paul Barnes, R. Gwoziecki, et al.. (2019). Investigation of nBTI degradation on GaN-on-Si E-mode MOSc-HEMT. SPIRE - Sciences Po Institutional REpository. 4.3.1–4.3.4. 21 indexed citations
2.
Kumar, Pushpendra, C. Leroux, A. Toffoli, et al.. (2017). Effect of La and Al addition used for threshold voltage shift on the BTI reliability of HfON-based FDSOI MOSFETs. HAL (Le Centre pour la Communication Scientifique Directe). 2B–2.1. 2 indexed citations
3.
Coquand, R., M. Cassé, Sylvain Barraud, et al.. (2013). Strain-Induced Performance Enhancement of Trigate and Omega-Gate Nanowire FETs Scaled Down to 10-nm Width. IEEE Transactions on Electron Devices. 60(2). 727–732. 47 indexed citations
4.
Molas, G., P. Blaise, Elisa Vianello, et al.. (2011). Study of defects in Al<inf>2</inf>O<inf>3</inf> blocking layers of TANOS memories by atomistic simulation, electrical characterization and physico-chemical material analyses. Institutional Research Information System (University of Udine). 72. 1–2. 1 indexed citations
5.
Altazin, Stéphane, R. Clerc, R. Gwoziecki, et al.. (2011). Analytical modeling of organic solar cells and photodiodes. Applied Physics Letters. 99(14). 38 indexed citations
6.
Buckley, Julien, Régis Barattin, Adrian Calboréan, et al.. (2010). From Atomistic to Device Level Investigation of Hybrid Redox Molecular/Silicon Field-Effect Memory Devices. IEEE Transactions on Nanotechnology. 10(2). 275–283. 10 indexed citations
7.
Ioannidis, E.G., A. Tsormpatzoglou, D.H. Tassis, et al.. (2010). Effect of Localized Interface Charge on the Threshold Voltage of Short-Channel Undoped Symmetrical Double-Gate MOSFETs. IEEE Transactions on Electron Devices. 58(2). 433–440. 33 indexed citations
8.
Puget, S., Pascal Le Masson, P. Mazoyer, et al.. (2010). Modeling the Independent Double Gate Transistor in Accumulation Regime for 1TDRAM Application. IEEE Transactions on Electron Devices. 57(4). 855–865.
9.
Cathignol, Augustin, et al.. (2009). Abnormally high local electrical fluctuations in heavily pocket-implanted bulk long MOSFET. Solid-State Electronics. 53(2). 127–133. 23 indexed citations
10.
Rafhay, Quentin, R. Clerc, G. Ghibaudo, & G. Pananakakis. (2008). Impact of source-to-drain tunnelling on the scalability of arbitrary oriented alternative channel material nMOSFETs. Solid-State Electronics. 52(10). 1474–1481. 23 indexed citations
11.
Revil, N., et al.. (2008). Impact of inside spacer process on fully self-aligned 250 GHz SiGe:C HBTs reliability performances: a-Si vs. nitride. Microelectronics Reliability. 48(8-9). 1198–1201. 2 indexed citations
12.
Reimbold, G., et al.. (2007). Initial and PBTI-induced traps and charges in Hf-based oxides/TiN stacks. Microelectronics Reliability. 47(4-5). 489–496. 19 indexed citations
13.
14.
Ghibaudo, G. & T. Boutchacha. (2002). Electrical noise and RTS fluctuations in advanced CMOS devices. Microelectronics Reliability. 42(4-5). 573–582. 282 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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