R. Kies

634 total citations
21 papers, 323 citations indexed

About

R. Kies is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, R. Kies has authored 21 papers receiving a total of 323 indexed citations (citations by other indexed papers that have themselves been cited), including 21 papers in Electrical and Electronic Engineering, 8 papers in Materials Chemistry and 2 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in R. Kies's work include Semiconductor materials and devices (19 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers) and Advanced Memory and Neural Computing (5 papers). R. Kies is often cited by papers focused on Semiconductor materials and devices (19 papers), Advancements in Semiconductor Devices and Circuit Design (13 papers) and Advanced Memory and Neural Computing (5 papers). R. Kies collaborates with scholars based in France, Italy and Switzerland. R. Kies's co-authors include G. Pananakakis, G. Ghibaudo, C. Papadas, Jean‐Michel Hartmann, C. Vizioz, Sylvain Barraud, Adeline Grenier, J. A. Sturm, C. Perrot and F. Andrieu and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

R. Kies

20 papers receiving 309 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
R. Kies France 10 317 84 44 33 19 21 323
S. Brus Belgium 13 469 1.5× 98 1.2× 56 1.3× 86 2.6× 14 0.7× 48 492
Yusuke Oniki Belgium 8 257 0.8× 60 0.7× 46 1.0× 27 0.8× 17 0.9× 32 282
Wei Yip Loh Singapore 9 332 1.0× 68 0.8× 46 1.0× 63 1.9× 18 0.9× 27 348
P. O’Neil United States 6 249 0.8× 74 0.9× 25 0.6× 59 1.8× 9 0.5× 14 268
Farid Sebaai Belgium 10 397 1.3× 85 1.0× 91 2.1× 56 1.7× 21 1.1× 41 411
N. Zamani United States 5 364 1.1× 127 1.5× 12 0.3× 72 2.2× 17 0.9× 12 391
J.T. Clemens United States 9 426 1.3× 33 0.4× 54 1.2× 55 1.7× 15 0.8× 31 454
F.N. Cubaynes Belgium 9 369 1.2× 48 0.6× 60 1.4× 34 1.0× 7 0.4× 26 388
S. Locorotondo Belgium 10 266 0.8× 33 0.4× 51 1.2× 51 1.5× 13 0.7× 19 269
L. Baldi Italy 8 206 0.6× 65 0.8× 22 0.5× 67 2.0× 19 1.0× 28 244

Countries citing papers authored by R. Kies

Since Specialization
Citations

This map shows the geographic impact of R. Kies's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Kies with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Kies more than expected).

Fields of papers citing papers by R. Kies

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Kies. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Kies. The network helps show where R. Kies may publish in the future.

Co-authorship network of co-authors of R. Kies

This figure shows the co-authorship network connecting the top 25 collaborators of R. Kies. A scholar is included among the top collaborators of R. Kies based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Kies. R. Kies is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Garros, X., P. Batude, J. Lacord, et al.. (2022). Methodology for Active Junction Profile Extraction in thin film FD-SOI Enabling performance driver identification in 500°C devices for 3D sequential integration. 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits). 332–333. 1 indexed citations
2.
Barraud, Sylvain, B. Prévitali, C. Vizioz, et al.. (2020). 7-Levels-Stacked Nanosheet GAA Transistors for High Performance Computing. SPIRE - Sciences Po Institutional REpository. 1–2. 71 indexed citations
3.
Colinge, J.P., G. Ghibaudo, X. Garros, et al.. (2020). All-Operation-Regime Characterization and Modeling of Drain Current Variability in Junctionless and Inversion-Mode FDSOI Transistors. SPIRE - Sciences Po Institutional REpository. 1–2. 9 indexed citations
4.
Persico, A., F. Aussenac, R. Kies, et al.. (2013). A technological and electrical study of self-aligned charge-trap split-gate memory devices. Microelectronic Engineering. 118. 15–19. 3 indexed citations
5.
Gay, Guillaume, G. Molas, M. Bocquet, et al.. (2012). Performance and Modeling of Si-Nanocrystal Double-Layer Memory Devices With High- $k$ Control Dielectrics. IEEE Transactions on Electron Devices. 59(4). 933–940. 9 indexed citations
6.
Molas, G., R. Kies, M. Bocquet, et al.. (2011). Investigation of charge-trap memories with AlN based band engineered storage layers. Solid-State Electronics. 58(1). 68–74. 3 indexed citations
7.
Molas, G., R. Kies, M. Bocquet, et al.. (2010). Investigation of charge-trap memories with AlN based band engineered storage layers. 1–4. 1 indexed citations
8.
Gay, Guillaume, G. Molas, M. Bocquet, et al.. (2010). Hybrid silicon nanocrystals/SiN charge trapping layer with high-k dielectrics for FN and CHE programming. 1071. 54–55. 2 indexed citations
9.
Vianello, Elisa, L. Perniola, P. Blaise, et al.. (2009). New insight on the charge trapping mechanisms of SiN-based memory by atomistic simulations and electrical modeling. Institutional Research Information System (University of Udine). 1–4. 20 indexed citations
10.
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12.
Ghibaudo, G., G. Pananakakis, R. Kies, Emmanuel Vincent, & C. Papadas. (1999). Accelerated dielectric breakdown and wear out standard testing methods and structures for reliability evaluation of thin oxides. Microelectronics Reliability. 39(5). 597–613. 14 indexed citations
13.
Kies, R., et al.. (1998). Reversibility of charge trapping and SILC creation in thin oxides after stress/anneal cycling. Microelectronics Reliability. 38(6-8). 1057–1061. 15 indexed citations
14.
Pananakakis, G., et al.. (1997). Generalized trapping kinetic model for the oxide degradation after Fowler–Nordheim uniform gate stress. Journal of Applied Physics. 82(5). 2548–2557. 20 indexed citations
15.
Kies, R., G. Ghibaudo, G. Pananakakis, & G. Reimbold. (1997). Temperature dependence of transport and trapping properties of oxide-nitride-oxide dielectric films. Solid-State Electronics. 41(7). 1041–1049. 4 indexed citations
16.
Kies, R., et al.. (1996). A method for the assessment of oxide charge density and centroid in metal-oxide-semiconductor structures after uniform gate stress. Applied Physics Letters. 68(26). 3790–3792. 10 indexed citations
17.
Kies, R., T. Egilsson, G. Ghibaudo, & G. Pananakakis. (1996). Assessment of oxide charge density and centroid from Fowler-Nordheim derivative characteristics in MOS structures after uniform gate stress. Microelectronics Reliability. 36(11-12). 1619–1622. 1 indexed citations
18.
Pananakakis, G., G. Ghibaudo, R. Kies, & C. Papadas. (1995). Temperature dependence of the Fowler–Nordheim current in metal-oxide-degenerate semiconductor structures. Journal of Applied Physics. 78(4). 2635–2641. 105 indexed citations
19.
Kies, R., et al.. (1995). Temperature dependence of the leakage current in oxide-nitride-oxide interpoly dielectrics. Microelectronic Engineering. 28(1-4). 309–312. 3 indexed citations
20.
Kies, R., C. Papadas, G. Pananakakis, & G. Ghibaudo. (1994). Temperature Dependence of Fowler-Nordheim Emission Tunneling Current in MOS Structures. European Solid-State Device Research Conference. 507–510. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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