G. Regula

530 total citations
58 papers, 438 citations indexed

About

G. Regula is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, G. Regula has authored 58 papers receiving a total of 438 indexed citations (citations by other indexed papers that have themselves been cited), including 55 papers in Electrical and Electronic Engineering, 22 papers in Atomic and Molecular Physics, and Optics and 18 papers in Materials Chemistry. Recurrent topics in G. Regula's work include Silicon and Solar Cell Technologies (43 papers), Semiconductor materials and interfaces (20 papers) and Silicon Carbide Semiconductor Technologies (16 papers). G. Regula is often cited by papers focused on Silicon and Solar Cell Technologies (43 papers), Semiconductor materials and interfaces (20 papers) and Silicon Carbide Semiconductor Technologies (16 papers). G. Regula collaborates with scholars based in France, Norway and Russia. G. Regula's co-authors include B. Pichaud, M. Lancin, Nathalie Mangelinck‐Noël, G. Reinhart, M.G. Tsoutsouva, E. B. Yakimov, Hosni Idrissi, J. Baruchel, Laurent Barrallier and E. Ntsoenzok and has published in prestigious journals such as Journal of Applied Physics, Acta Materialia and Journal of Applied Crystallography.

In The Last Decade

G. Regula

54 papers receiving 435 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
G. Regula France 12 344 181 105 80 44 58 438
Bei Wu United States 9 303 0.9× 171 0.9× 68 0.6× 90 1.1× 39 0.9× 11 392
Jean‐Louis Santailler France 13 227 0.7× 202 1.1× 61 0.6× 47 0.6× 81 1.8× 43 392
С. А. Шевченко Russia 9 184 0.5× 177 1.0× 120 1.1× 76 0.9× 22 0.5× 46 305
Jinjer Huang China 13 255 0.7× 108 0.6× 188 1.8× 60 0.8× 94 2.1× 58 401
S. S. Mani United States 11 298 0.9× 128 0.7× 79 0.8× 35 0.4× 138 3.1× 30 487
M. Italia Italy 12 430 1.3× 133 0.7× 124 1.2× 135 1.7× 28 0.6× 36 499
J. Ryu United States 10 393 1.1× 146 0.8× 103 1.0× 27 0.3× 83 1.9× 15 526
P.W. Pellegrini United States 11 188 0.5× 117 0.6× 201 1.9× 57 0.7× 50 1.1× 26 323
D. J. Godfrey United Kingdom 11 222 0.6× 88 0.5× 85 0.8× 28 0.3× 53 1.2× 47 347
E. Lampin France 13 245 0.7× 352 1.9× 95 0.9× 77 1.0× 34 0.8× 31 523

Countries citing papers authored by G. Regula

Since Specialization
Citations

This map shows the geographic impact of G. Regula's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by G. Regula with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites G. Regula more than expected).

Fields of papers citing papers by G. Regula

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by G. Regula. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by G. Regula. The network helps show where G. Regula may publish in the future.

Co-authorship network of co-authors of G. Regula

This figure shows the co-authorship network connecting the top 25 collaborators of G. Regula. A scholar is included among the top collaborators of G. Regula based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with G. Regula. G. Regula is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Regula, G., I. Périchaud, G. Reinhart, et al.. (2025). A method to relate the presence of structural defects and impurities and their impact on the electrical activity in silicon for photovoltaic applications. Solar Energy Materials and Solar Cells. 282. 113415–113415.
2.
Regula, G., G. Reinhart, I. Périchaud, et al.. (2023). Crystal distortions and structural defects at several scales generated during the growth of silicon contaminated with carbon. Acta Materialia. 252. 118904–118904. 4 indexed citations
3.
Becker, M., É. Pihan, Laurent Barrallier, et al.. (2020). Investigation of subgrains in directionally solidified cast mono-seeded silicon and their interactions with twin boundaries. Solar Energy Materials and Solar Cells. 218. 110817–110817. 7 indexed citations
4.
Tsoutsouva, M.G., et al.. (2019). Random angle grain boundary formation and evolution dynamics during Si directional solidification. Acta Materialia. 171. 253–260. 7 indexed citations
5.
Barakel, Damien, Olivier Palais, Marisa Di Sabatino, et al.. (2019). Role of Impurities in Silicon Solidification and Electrical Properties Studied by Complementary In Situ and Ex Situ Methods. physica status solidi (a). 216(17). 6 indexed citations
6.
Becker, M., G. Regula, G. Reinhart, et al.. (2019). Simultaneous X-ray radiography and diffraction topography imaging applied to silicon for defect analysis during melting and crystallization. Journal of Applied Crystallography. 52(6). 1312–1320. 10 indexed citations
7.
Boudjelthia, El Amin Kouadri, E. Ntsoenzok, Roland Benoit, et al.. (2015). Plasma immersion ion implantation: A viable candidate for low cost purification of mc-Si by nanocavities?. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 366. 150–154. 1 indexed citations
8.
Yakimov, E. B., G. Regula, & B. Pichaud. (2013). Cathodoluminescence and electron beam induced current investigations of stacking faults mechanically introduced in 4H-SiC in the brittle domain. Journal of Applied Physics. 114(8). 15 indexed citations
9.
Dumont, M., G. Regula, Marie‐Vanessa Coulet, et al.. (2013). Growth and migration of nanocavities in He+ multi-implanted Si measured by in situ small-angle X-ray scattering. Materials Science and Engineering B. 182. 45–51. 6 indexed citations
10.
Canino, Mariaconcetta, G. Regula, Ming Xu, et al.. (2011). Roles of local He concentration and Si sample orientation on cavity growth in amorphous silicon. The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics. 91(34). 4324–4331. 1 indexed citations
11.
Lancin, M., M. Texier, G. Regula, & B. Pichaud. (2009). Defects created in N-doped 4H-SiC in the brittle regime: Stacking fault multiplicity and dislocation cores. The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics. 89(15). 1251–1266. 18 indexed citations
12.
Canino, Mariaconcetta, G. Regula, M. Lancin, et al.. (2008). Cavities at the Si projected range by high dose and energy Si ion implantation in Si. Materials Science and Engineering B. 159-160. 153–156. 2 indexed citations
13.
Canino, Mariaconcetta, et al.. (2008). Defect engineering via ion implantation to control B diffusion in Si. Materials Science and Engineering B. 159-160. 338–341. 7 indexed citations
14.
Regula, G., et al.. (2007). Silver Nanocrystals at Cavities Created by High Energy Helium Implantation in Bulk Silicon. MRS Proceedings. 994. 1 indexed citations
15.
Raïssi, Mahfoudh, G. Regula, S. Nitsche, et al.. (2007). Nanocavity Buffer Induced by Gas Ion Implantation in Silicon Substrate for Strain Relaxation of Heteroepitaxial Si1-xGex/Si Thin Layers. MRS Proceedings. 994. 2 indexed citations
16.
Coulet, Marie‐Vanessa, et al.. (2007). Characterization of Nanocavities in Silicon Using Small Angle X-Ray Scattering. MRS Proceedings. 994.
17.
Lancin, M., G. Regula, J. Douin, et al.. (2006). Investigation of mechanical stress induced-double stacking faults in (11-20) N-doped 4H-SiC combining optical and transmission electron microscopy, contrast simulation, and dislocations core reconstruction. Materials science forum. 527. 379. 1 indexed citations
18.
Regula, G., et al.. (2006). Rare Gas Ion Implanted-Silicon Template for the Growth of Relaxed Si1−xGex/Si (100). AIP conference proceedings. 866. 283–286. 1 indexed citations
19.
20.
Idrissi, Hosni, G. Regula, M. Lancin, J. Douin, & B. Pichaud. (2005). Study of Shockley partial dislocation mobility in highly N‐doped 4H‐SiC by cantilever bending. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2(6). 1998–2003. 16 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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