J. Stoëmenos

3.9k total citations
191 papers, 3.2k citations indexed

About

J. Stoëmenos is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, J. Stoëmenos has authored 191 papers receiving a total of 3.2k indexed citations (citations by other indexed papers that have themselves been cited), including 172 papers in Electrical and Electronic Engineering, 68 papers in Materials Chemistry and 34 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in J. Stoëmenos's work include Semiconductor materials and devices (85 papers), Thin-Film Transistor Technologies (70 papers) and Silicon Carbide Semiconductor Technologies (67 papers). J. Stoëmenos is often cited by papers focused on Semiconductor materials and devices (85 papers), Thin-Film Transistor Technologies (70 papers) and Silicon Carbide Semiconductor Technologies (67 papers). J. Stoëmenos collaborates with scholars based in Greece, Germany and France. J. Stoëmenos's co-authors include N. A. Economou, J. Margail, Mitsutoshi Miyasaka, V. Heera, C. Jaussaud, M. Bruel, R. Kögler, B. Pécz, W. Skorupa and D. Meakin and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

J. Stoëmenos

186 papers receiving 3.1k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. Stoëmenos Greece 30 2.7k 1.5k 537 390 389 191 3.2k
E. P. Gusev United States 34 4.3k 1.6× 1.9k 1.3× 679 1.3× 313 0.8× 220 0.6× 84 4.6k
R. Carius Germany 36 4.3k 1.6× 3.8k 2.6× 728 1.4× 634 1.6× 193 0.5× 230 5.1k
Akiharu Morimoto Japan 28 1.6k 0.6× 1.8k 1.2× 229 0.4× 264 0.7× 149 0.4× 121 2.3k
Sadafumi Yoshida Japan 26 1.6k 0.6× 797 0.5× 623 1.2× 212 0.5× 195 0.5× 147 2.3k
J. von Borany Germany 20 914 0.3× 1.3k 0.9× 349 0.6× 356 0.9× 311 0.8× 116 1.7k
I. Mártil Spain 30 2.2k 0.8× 1.4k 1.0× 818 1.5× 274 0.7× 176 0.5× 146 2.6k
Tatsuro Miyasato Japan 17 954 0.4× 1.5k 1.0× 553 1.0× 454 1.2× 152 0.4× 80 2.0k
S. S. Chao United States 19 1.8k 0.7× 1.7k 1.1× 255 0.5× 373 1.0× 198 0.5× 34 2.2k
C. J. Mogab United States 23 1.5k 0.6× 861 0.6× 232 0.4× 332 0.9× 237 0.6× 49 1.9k
Alexandre Boulle France 26 921 0.3× 1.4k 0.9× 247 0.5× 279 0.7× 282 0.7× 129 2.1k

Countries citing papers authored by J. Stoëmenos

Since Specialization
Citations

This map shows the geographic impact of J. Stoëmenos's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Stoëmenos with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Stoëmenos more than expected).

Fields of papers citing papers by J. Stoëmenos

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Stoëmenos. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Stoëmenos. The network helps show where J. Stoëmenos may publish in the future.

Co-authorship network of co-authors of J. Stoëmenos

This figure shows the co-authorship network connecting the top 25 collaborators of J. Stoëmenos. A scholar is included among the top collaborators of J. Stoëmenos based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Stoëmenos. J. Stoëmenos is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Vouroutzis, Ν., J. Stoëmenos, N. Frangis, et al.. (2019). Structural characterization of poly-Si Films crystallized by Ni Metal Induced Lateral Crystallization. Scientific Reports. 9(1). 2844–2844. 13 indexed citations
2.
Skarlatos, D., V. Ioannou-Sougleridis, Mario Barozzi, et al.. (2018). (Invited) Issues with n-type Dopants in Germanium. ECS Transactions. 86(10). 51–58. 3 indexed citations
3.
Voelskow, M., B. Pécz, J. Stoëmenos, & W. Skorupa. (2009). Epitaxial 3C-SiC nanocrystal formation at the SiO2/Si interface after carbon implantation and subsequent annealing in CO atmosphere. Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms. 267(8-9). 1364–1367. 1 indexed citations
4.
Soueidan, Maher, Gabriel Ferro, B. Nsouli, et al.. (2006). Characterization of a 3C-SiC Single Domain Grown on 6H-SiC(0001) by a Vapor−Liquid−Solid Mechanism. Crystal Growth & Design. 6(11). 2598–2602. 31 indexed citations
5.
Smith, M., Richard McMahon, W. Skorupa, M. Voelskow, & J. Stoëmenos. (2005). A Thermal Model for Flash Lamp Annealing of 3C-SiC/Si Multi-Layer Systems (i-FLASiC). Materials science forum. 483-485. 217–220. 1 indexed citations
6.
Stoëmenos, J., D. Panknin, Martin Eickhoff, V. Heera, & W. Skorupa. (2004). Improved 3C-SiC Films Epitaxially Grown on Si by Flash Lamp Processing. Journal of The Electrochemical Society. 151(2). G136–G136. 14 indexed citations
7.
Eickhoff, Martin, et al.. (2004). Influence of crystal quality on the electronic properties of n-type 3C-SiC grown by low temperature low pressure chemical vapor deposition. Journal of Applied Physics. 95(12). 7908–7917. 19 indexed citations
8.
Stoëmenos, J., B. Pécz, & V. Heera. (2000). Consequences of High-Dose, High Temperature Al<sup>+</sup> Implantation in 6H-SiC. Materials science forum. 338-342. 881–884. 1 indexed citations
9.
Zappe, Stefan, Ε. Obermeier, J. Stoëmenos, et al.. (1999). Stabilization of the 3C-SiC/SOI system by an intermediate silicon nitride layer. Materials Science and Engineering B. 61-62. 522–525. 6 indexed citations
10.
Heera, V., J. Stoëmenos, R. Kögler, M. Voelskow, & W. Skorupa. (1999). Crystallization and surface erosion of SiC by ion irradiation at elevated temperatures. Journal of Applied Physics. 85(3). 1378–1386. 25 indexed citations
11.
Krötz, G., H.J. Möller, Martin Eickhoff, et al.. (1999). Heteroepitaxial growth of 3C-SiC on SOI for sensor applications. Materials Science and Engineering B. 61-62. 516–521. 24 indexed citations
12.
Clavaguera-Mora, M.T., et al.. (1997). Growth of SiC films obtained by LPCVD. Diamond and Related Materials. 6(10). 1306–1310. 22 indexed citations
13.
Carluccio, R., et al.. (1997). Structure of poly-Si films obtained by laser annealing. Thin Solid Films. 296(1-2). 57–60. 12 indexed citations
14.
Komninou, Ph., et al.. (1996). TOPOLOGY OF CRYSTALLITE JUNCTIONS IN EPITAXIAL SEMICONDUCTORS. Journal of the Mechanical Behavior of Materials. 7(1). 51–66. 2 indexed citations
15.
Flevaris, N. K. & J. Stoëmenos. (1993). Structural Characteristics and Mechanical Properties of Compositionally Modulated Metallic Multilayers. Journal of the Mechanical Behavior of Materials. 4(3). 201–212. 1 indexed citations
16.
Carluccio, R., A. Pecora, G. Fortunato, J. Stoëmenos, & N. A. Economou. (1992). High Substrate Temperature (420 °C) Excimer Laser Crystallization of Hydrogenated Amorphous Silicon. MRS Proceedings. 283. 3 indexed citations
17.
Stoëmenos, J., et al.. (1989). Structural study of PbTe films grown on BaF2 by hot wall epitaxy. Journal of Crystal Growth. 97(2). 443–452. 5 indexed citations
18.
Papadimitriou, L., et al.. (1988). High-temperature phases of YBa2Cu3O6+x related to the superconducting transition. Journal of Materials Science Letters. 7(5). 489–492. 6 indexed citations
19.
Paraskevopoulos, Konstantinos, E. Hatzikraniotis, M. Zamani, et al.. (1988). Intercalation studies in bismuth selenide. Materials Science and Engineering B. 1(2). 147–154. 14 indexed citations
20.
Meakin, D., P. Migliorato, J. Stoëmenos, & N. A. Economou. (1988). The growth of polycrystalline silicon films by low pressure chemical vapour deposition at relatively low temperatures. Thin Solid Films. 163. 249–254. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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