F. Letertre

1.4k total citations
57 papers, 1.0k citations indexed

About

F. Letertre is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, F. Letertre has authored 57 papers receiving a total of 1.0k indexed citations (citations by other indexed papers that have themselves been cited), including 55 papers in Electrical and Electronic Engineering, 8 papers in Atomic and Molecular Physics, and Optics and 8 papers in Biomedical Engineering. Recurrent topics in F. Letertre's work include Semiconductor materials and devices (29 papers), Silicon and Solar Cell Technologies (25 papers) and Silicon Carbide Semiconductor Technologies (19 papers). F. Letertre is often cited by papers focused on Semiconductor materials and devices (29 papers), Silicon and Solar Cell Technologies (25 papers) and Silicon Carbide Semiconductor Technologies (19 papers). F. Letertre collaborates with scholars based in France, Belgium and Italy. F. Letertre's co-authors include L. Di Cioccio, Y. Le Tiec, C. Jaussaud, M. Bruel, C. Richtarch, K.K. Bourdelle, T. Akatsu, A. Claverie, C. Mazuré and A.M. Papon and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

F. Letertre

52 papers receiving 980 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
F. Letertre France 17 938 227 218 214 99 57 1.0k
G. Krötz Germany 17 674 0.7× 193 0.9× 301 1.4× 143 0.7× 75 0.8× 61 824
T. Akatsu France 14 453 0.5× 119 0.5× 131 0.6× 167 0.8× 61 0.6× 20 522
W. Maszara United States 19 1.6k 1.8× 346 1.5× 229 1.1× 389 1.8× 104 1.1× 67 1.7k
N. Rajan United States 7 452 0.5× 192 0.8× 205 0.9× 115 0.5× 39 0.4× 11 637
Susumu Horita Japan 16 435 0.5× 200 0.9× 431 2.0× 63 0.3× 89 0.9× 85 679
C. Serre Spain 15 426 0.5× 132 0.6× 191 0.9× 102 0.5× 72 0.7× 46 574
K. Pinardi Sweden 10 318 0.3× 125 0.6× 119 0.5× 169 0.8× 26 0.3× 26 463
A. Plößl Germany 8 437 0.5× 133 0.6× 99 0.5× 195 0.9× 17 0.2× 14 536
R Todi United States 14 360 0.4× 119 0.5× 370 1.7× 64 0.3× 62 0.6× 31 561
Dominique Planson France 16 1.1k 1.2× 106 0.5× 363 1.7× 222 1.0× 28 0.3× 140 1.3k

Countries citing papers authored by F. Letertre

Since Specialization
Citations

This map shows the geographic impact of F. Letertre's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by F. Letertre with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites F. Letertre more than expected).

Fields of papers citing papers by F. Letertre

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by F. Letertre. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by F. Letertre. The network helps show where F. Letertre may publish in the future.

Co-authorship network of co-authors of F. Letertre

This figure shows the co-authorship network connecting the top 25 collaborators of F. Letertre. A scholar is included among the top collaborators of F. Letertre based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with F. Letertre. F. Letertre is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Penot, Jean-Daniel, et al.. (2010). Study of the formation, evolution, and dissolution of interfacial defects in silicon wafer bonding. Journal of Applied Physics. 107(9). 10 indexed citations
2.
Radu, Ionut, et al.. (2009). A model of interface defect formation in silicon wafer bonding. Applied Physics Letters. 94(10). 39 indexed citations
3.
Signamarcheix, Thomas, F. Allibert, F. Letertre, et al.. (2008). Germanium oxynitride (GeOxNy) as a back interface passivation layer for Germanium-on-insulator substrates. Applied Physics Letters. 93(2). 22109–22109. 5 indexed citations
4.
Nguyen, P., K.K. Bourdelle, Nicolas Daval, et al.. (2008). Splitting kinetics of Si0.8Ge0.2 layers implanted with H or sequentially with He and H. Journal of Applied Physics. 104(11). 4 indexed citations
5.
Abbadie, Alexandra, et al.. (2007). Comparison of Different Etching Techniques in Order to Reveal Dislocations in Thick Ge Layers. ECS Transactions. 6(4). 263–269. 11 indexed citations
6.
Deguet, C., J. Dechamp, Christophe Morales, et al.. (2006). 200 mm Germanium-On-Insulator (GeOI) Structures Realized from Epitaxial Wafers Using the Smart Cut(TM) Technology. ECS Meeting Abstracts. MA2005-01(11). 483–483. 3 indexed citations
7.
Auvray, Laurent, E. Blanquet, Etienne Pernot, et al.. (2006). Processing of Poly-SiC Substrates with Large Grains for Wafer-Bonding. Materials science forum. 527-529. 71–74. 2 indexed citations
8.
Dorsaz, J., J.‐F. Carlin, Mauro Mosca, et al.. (2006). First InGaN/GaN thin film LED using SiCOI engineered substrate. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 3(6). 2227–2230. 1 indexed citations
9.
Tauzin, A., K.K. Bourdelle, F. Letertre, et al.. (2006). Time Dependence Study Of Hydrogen-Induced Defects In Silicon During Thermal Anneals. AIP conference proceedings. 866. 65–68. 5 indexed citations
10.
Pons, M., E. Blanquet, Didier Chaussende, et al.. (2006). High temperature processing of poly-SiC substrates from the vapor phase for wafer-bonding. Surface and Coatings Technology. 201(7). 4014–4020. 4 indexed citations
11.
Lutsenko, E. V., Vitaly Z. Zubialevich, G. P. Yablonskii, et al.. (2005). Photoluminescence, stimulated emission and carrier dynamics in GaN/Si heterostructures studied by time‐resolved four‐wave mixing technique. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 2(7). 2724–2727. 6 indexed citations
12.
Bresson, N., S. Cristoloveanu, C. Mazuré, F. Letertre, & Hiroshi Iwai. (2005). Integration of buried insulators with high thermal conductivity in SOI MOSFETs: Thermal properties and short channel effects. Solid-State Electronics. 49(9). 1522–1528. 47 indexed citations
13.
Cioccio, L. Di, E. Jalaguier, & F. Letertre. (2005). III–V layer transfer onto silicon and applications. physica status solidi (a). 202(4). 509–515. 18 indexed citations
14.
Moriceau, H., C. R. Gorla, Anne‐Marie Charvet, et al.. (2005). Transfer of patterned Si and SiO/sub 2/ layers for the fabrication of patterned and mixed SOI. 183. 203–204.
15.
Aspar, B., C. Lagahe, H. Moriceau, et al.. (2003). Smart-Cut(R) process: an original way to obtain thin films by ion implantation. 255–260.
16.
Aspar, B., C. Jaussaud, L. Di Cioccio, et al.. (2003). New semiconductor hetero-substrates for high temperature applications using the Smart-Cut(R) technology. 61. 67–73. 1 indexed citations
17.
Letertre, F., B. Ghyselen, & B. Aspar. (2002). A new manufacturing approach for mono-crystalline SiC wafers. III-Vs Review. 15(2). 46–49. 1 indexed citations
18.
Aspar, B., H. Moriceau, E. Jalaguier, et al.. (2001). The generic nature of the Smart-Cut® process for thin film transfer. Journal of Electronic Materials. 30(7). 834–840. 81 indexed citations
19.
Barthe, M.F., L. Henry, C. Corbel, et al.. (2000). Positron annihilation at proton-induced defects in6H−SiC/SiCand6H−SiC/SiO2/Sistructures. Physical review. B, Condensed matter. 62(24). 16638–16644. 15 indexed citations
20.
Letertre, F., L. Di Cioccio, H. J. von Bardeleben, et al.. (2000). Electrical and Physical Behavior of SiC Layers on Insulator (SiCOI). Materials science forum. 338-342. 715–718. 5 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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