E. Kohn

1.2k total citations
39 papers, 943 citations indexed

About

E. Kohn is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, E. Kohn has authored 39 papers receiving a total of 943 indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Electrical and Electronic Engineering, 24 papers in Condensed Matter Physics and 19 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in E. Kohn's work include GaN-based semiconductor devices and materials (24 papers), Semiconductor Quantum Structures and Devices (15 papers) and Semiconductor materials and devices (12 papers). E. Kohn is often cited by papers focused on GaN-based semiconductor devices and materials (24 papers), Semiconductor Quantum Structures and Devices (15 papers) and Semiconductor materials and devices (12 papers). E. Kohn collaborates with scholars based in Germany, France and United States. E. Kohn's co-authors include I. Daumiller, N. Grandjean, Farid Medjdoub, Christophe Gaquière, M. Gonschorek, C. Kirchner, M. A. Py, K.J. Ebeling, J.‐F. Carlin and M. Kamp and has published in prestigious journals such as Analytical Chemistry, Journal of The Electrochemical Society and IEEE Transactions on Microwave Theory and Techniques.

In The Last Decade

E. Kohn

38 papers receiving 892 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
E. Kohn Germany	14	761	652	310	298	178	39	943
K.P. Lee United States	8	505 0.7×	462 0.7×	198 0.6×	209 0.7×	198 1.1×	17	652
C. Dua France	16	766 1.0×	784 1.2×	248 0.8×	240 0.8×	134 0.8×	63	977
Yasuo Ohno Japan	17	706 0.9×	832 1.3×	262 0.8×	240 0.8×	179 1.0×	90	1.0k
A.P. Zhang United States	8	693 0.9×	549 0.8×	253 0.8×	272 0.9×	197 1.1×	12	791
M. Kunze Germany	13	572 0.8×	404 0.6×	197 0.6×	226 0.8×	303 1.7×	23	780
R. D. Briggs United States	14	351 0.5×	544 0.8×	210 0.7×	182 0.6×	178 1.0×	31	714
Muneyoshi Suita Japan	16	702 0.9×	557 0.9×	210 0.7×	390 1.3×	245 1.4×	38	840
N. G. Kolin Russia	16	518 0.7×	422 0.6×	215 0.7×	356 1.2×	189 1.1×	57	722
G. Kelner United States	20	741 1.0×	1.4k 2.1×	477 1.5×	334 1.1×	233 1.3×	36	1.6k
R. L. Henry United States	13	869 1.1×	659 1.0×	246 0.8×	378 1.3×	284 1.6×	32	985

Countries citing papers authored by E. Kohn

Since Specialization

Citations

This map shows the geographic impact of E. Kohn's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by E. Kohn with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites E. Kohn more than expected).

Fields of papers citing papers by E. Kohn

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by E. Kohn. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by E. Kohn. The network helps show where E. Kohn may publish in the future.

Co-authorship network of co-authors of E. Kohn

This figure shows the co-authorship network connecting the top 25 collaborators of E. Kohn. A scholar is included among the top collaborators of E. Kohn based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with E. Kohn. E. Kohn is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

Alomari, M., David Maier, H. Behmenburg, et al.. (2013). Current collapse reduction in InAlGaN/GaN high electron mobility transistors by surface treatment of thermally stable ultrathin in situ SiN passivation. Solid-State Electronics. 89. 207–211. 9 indexed citations

Maier, David, M. Alomari, E. Kohn, et al.. (2010). High temperature stability of nitride-based power HEMTs. OPen Access Repositorium der Universität Ulm (OPARU) (Ulm University). 1–4. 2 indexed citations

Medjdoub, Farid, J.‐F. Carlin, Christophe Gaquière, N. Grandjean, & E. Kohn. (2008). Status of the Emerging InAlN/GaN Power HEMT Technology. HAL (Le Centre pour la Communication Scientifique Directe). 2(1). 1–7. 63 indexed citations

Medjdoub, Farid, J.‐F. Carlin, M. Gonschorek, et al.. (2007). Barrier layer downscaling of InAIN/GaN HEMTs. HAL (Le Centre pour la Communication Scientifique Directe). 109–110. 8 indexed citations

Medjdoub, Farid, J.‐F. Carlin, M. Gonschorek, et al.. (2006). Can InAlN/GaN be an alternative to high power / high temperature AlGaN/GaN devices?. HAL (Le Centre pour la Communication Scientifique Directe). 1–4. 139 indexed citations

Medjdoub, Farid, J.‐F. Carlin, M. Gonschorek, et al.. (2006). Small-signal characteristics of AlInN/GaN HEMTs. Electronics Letters. 42(13). 779–780. 33 indexed citations

Bessemoulin, A., et al.. (2004). Coplanar W-band low noise amplifier MMIC using 100-nm gate-length GaAs PHEMTs. Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft). 1. 25–28. 3 indexed citations

Adamschik, M., et al.. (2004). Application of CVD-diamond for catheter ablation in the heart. Diamond and Related Materials. 13(4-8). 1080–1083. 11 indexed citations

Ziegler, Volker, et al.. (2002). Metamorphic HFETs on GaAs with InP-subchannels for device performance improvements. 182–185. 2 indexed citations

10.

Guhel, Y., B. Boudart, Virginie Hoel, et al.. (2002). Effects of high temperature on the electrical behavior of AlGaN/GaN HEMTs. Microwave and Optical Technology Letters. 34(1). 4–6. 14 indexed citations

11.

Neuburger, Martin, I. Daumiller, M. Kunze, et al.. (2002). The Role of Charge Dipoles in GaN HFET Design. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics. 86–89. 5 indexed citations

12.

Daumiller, I., D. Théron, Christophe Gaquière, et al.. (2001). Current instabilities in GaN-based devices. IEEE Electron Device Letters. 22(2). 62–64. 127 indexed citations

13.

Gräbeldinger, H., Barbara Kühn, F. Scholz, et al.. (1999). Short-channel AlGaN/GaN HEMTs with 70 nm T-gate. Electronics Letters. 35(23). 2018–2019. 6 indexed citations

14.

Daumiller, I., C. Kirchner, M. Kamp, K.J. Ebeling, & E. Kohn. (1999). Evaluation of the temperature stability of AlGaN/GaN heterostructure FETs. IEEE Electron Device Letters. 20(9). 448–450. 147 indexed citations

15.

Kishimoto, Shigeru, T. Mizutani, M. Tomizawa, et al.. (1999). Potential profile measurement of GaAs MESFETs passivated with low-temperature grown GaAs layer by Kelvin probe force microscopy. Solid-State Electronics. 43(8). 1547–1553. 13 indexed citations

16.

Höck, G., Michael Glück, T. Hackbarth, H.-J. Herzog, & E. Kohn. (1998). Carrier mobilities in modulation doped Si1−xGex heterostructures with respect to FET applications. Thin Solid Films. 336(1-2). 141–144. 34 indexed citations

17.

Long, Wei, et al.. (1997). Analytical modeling of dual-gate HFET's. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 16(12). 1409–1417. 3 indexed citations

18.

Geiger, Dorin, et al.. (1995). Noise in channel doped GaInP/InGaAs HFET devices. Electronics Letters. 31(15). 1295–1297. 5 indexed citations

19.

Kohn, E.. (1980). A Correlation Between Etch Characteristics of GaAs Etch Solutions Containing H 2 O 2 and Surface Film Characteristics. Journal of The Electrochemical Society. 127(2). 505–508. 6 indexed citations

20.

Heime, K., et al.. (1974). Very low resistance NiAuGeNi contacts to n-GaAs. Solid-State Electronics. 17(8). 835–837. 46 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact