M. Alomari

1.1k citations

44 papers · 867 indexed · h-index 14

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 34
- GaN-based semiconductor devices and materials 34
Mechanics of Materials 15
- Metal and Thin Film Mechanics 14

Co-authors: E. Kohn N. Grandjean B. Pécz M.A. diForte-Poisson Christophe Gaquière Farid Medjdoub David Maier J.‐F. Carlin
Journals: IEEE Electron Device Letters (3 papers)IEEE Transactions on Electron Devices (3 papers)Diamond and Related Materials (3 papers)IEEE Sensors Journal (3 papers)Japanese Journal of Applied Physics (1 paper)
Partner nations: Germany Switzerland France

In The Last Decade

M. Alomari

44 papers receiving 830 citations

Peers

Countries citing papers authored by M. Alomari

Since Specialization

Citations

This map shows the geographic impact of M. Alomari's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Alomari with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Alomari more than expected).

Fields of papers citing papers by M. Alomari

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Alomari. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Alomari. The network helps show where M. Alomari may publish in the future.

Co-authorship network

The 25 scholars most cited alongside M. Alomari, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with M. Alomari Line = papers co-authored together M. Alomari links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Novel Normally-Off AlGaN/GaN-on-Si MIS-HEMT Exploiting Nanoholes Gate Structure Yomna M. Abdelmoniem, Marcellino Livia, M. Alomari, Joachim N. Burghartz, Ingmar Kallfass	2022	1
2	Physical Modeling of Charge Trapping Effects in GaN/Si Devices and Incorporation in the ASM-HEMT Model IEEE Journal of the Electron Devices Society ·Yomna M. Abdelmoniem, M. Alomari, Marcellino Livia, Dirk Fahle, H. Hahn, M. Heuken, Joachim N. Burghartz	2021	15
3	Model and Simulation of GaN-Based Pressure Sensors for High Temperature Applications—Part I: Physics Based Compact Modeling IEEE Sensors Journal ·Marcellino Livia, Yomna M. Abdelmoniem, M. Alomari, Joachim N. Burghartz	2021	4
4	Analysis of an AlGaN/AlN Super-Lattice Buffer Concept for 650-V Low-Dispersion and High-Reliability GaN HEMTs IEEE Transactions on Electron Devices ·Félix Iduriaga Bambra, Heike Grahn-Hoek, Desiree Delgadillo‐Chase, Mathias Schröder, M. Alomari, Dirk Fahle, M. Marx, M. Heuken, H. Kalisch, Andrei Vescan, Joachim N. Burghartz	2020	26
5	Temperature dependent lateral and vertical conduction mechanisms in AlGaN/GaN HEMT on thinned silicon substrate Japanese Journal of Applied Physics ·Félix Iduriaga Bambra, Eduardo Troche‐Pesqueira, Desiree Delgadillo‐Chase, M. Alomari, Dirk Fahle, M. Heuken, Joachim N. Burghartz	2019	3
6	Characterization of Thin-Film Temperature Sensors and Ultra-Thin Chips for HySiF Integration Fanli Jin, Desiree Delgadillo‐Chase, M. Alomari, Xia Jian-ming, B.D. Taplin, Joachim N. Burghartz	2019	2
7	Localization and analysis of surface charges trapped in AlGaN/GaN HEMTs using multiple secondary MIS gates Félix Iduriaga Bambra, Eduardo Troche‐Pesqueira, Desiree Delgadillo‐Chase, M. Alomari, Joachim N. Burghartz, 善夫菱川, Thomas Reindl	2018	2
8	Low-Dispersion, High-Voltage, Low-Leakage GaN HEMTs on Native GaN Substrates IEEE Transactions on Electron Devices ·Eduardo Troche‐Pesqueira, Félix Iduriaga Bambra, M. Alomari, Ildikó Cora, L. Tóth, B. Pécz, C Rossi, Muhammad Adi Saputra, Joachim N. Burghartz	2018	35
9	Temperature Dependent Vertical Conduction of GaN HEMT Structures on Silicon and Bulk GaN Substrates physica status solidi (a) ·Félix Iduriaga Bambra, Eduardo Troche‐Pesqueira, Desiree Delgadillo‐Chase, M. Alomari, M. Heuken, C Rossi, Muhammad Adi Saputra, Ildikó Cora, L. Tóth, B. Pécz, Joachim N. Burghartz	2018	6
10	Comprehensive compact electro-thermal GaN HEMT model Eduardo Troche‐Pesqueira, Alshaimaa Al Mokadem, Félix Iduriaga Bambra, M. Alomari, Joachim N. Burghartz	2017	2
11	Hydration detection through use of artificial sweat in doped- and partially-doped nanostructured CuO films Ceramics International ·Bünyamin Şahin, M. Alomari, Tolga Kaya	2015	27
12	Control of the in-plane thermal conductivity of ultra-thin nanocrystalline diamond films through the grain and grain boundary properties Acta Materialia ·J. Anaya, Stefano Rossi, M. Alomari, E. Kohn, Lajos Tóth, B. Pécz, Karl D. Hobart, Travis J. Anderson, Tatyana I. Feygelson, Bradford B. Pate, Martin Kuball	2015	102
13	Thermal analysis of submicron nanocrystalline diamond films Diamond and Related Materials ·Stefano Rossi, M. Alomari, Carlos Gilmer Castillo Correa, S. Bychikhin, D. Pogány, Jonathan Weaver, E. Kohn	2013	16
14	Current collapse reduction in InAlGaN/GaN high electron mobility transistors by surface treatment of thermally stable ultrathin in situ SiN passivation Solid-State Electronics ·M. Kiełt, M. Alomari, David Maier, H. Behmenburg, C. Giesen, M. Heuken, D. Pogány, E. Kohn, G. Strasser	2013	9
15	InAlN/GaN HEMTs for Operation in the 1000 $^{\circ} \hbox{C}$ Regime: A First Experiment IEEE Electron Device Letters ·David Maier, M. Alomari, N. Grandjean, J.‐F. Carlin, M.A. diForte-Poisson, C. Dua, S.L. Delage, E. Kohn	2012	91
16	Diamond overgrown InAlN/GaN HEMT Diamond and Related Materials ·M. Alomari, Michele Dipalo, Stefano Rossi, M.A. diForte-Poisson, S.L. Delage, J.‐F. Carlin, N. Grandjean, Christophe Gaquière, Lajos Tóth, B. Pécz, E. Kohn	2011	57
17	High temperature stability of nitride-based power HEMTs OPen Access Repositorium der Universität Ulm (OPARU) (Ulm University) ·David Maier, M. Alomari, E. Kohn, M.A. diForte-Poisson, C. Dua, S.L. Delage, N. Grandjean, J.‐F. Carlin, Andrey Chuvilin, Ute Kaiser, David Troadec, Christophe Gaquière	2010	2
18	Above 500 °C operation of InAlN/GaN HEMTs David Maier, M. Alomari, N. Grandjean, J.‐F. Carlin, DANI R.C, C. Dua, Andrey Chuvilin, David Troadec, Christophe Gaquière, Ute Kaiser, S.L. Delage, E. Kohn	2009	4
19	Thick nano-crystalline diamond overgrowth on InAlN/GaN devices for thermal management Michele Dipalo, M. Alomari, J.‐F. Carlin, N. Grandjean, DANI R.C, S.L. Delage, E. Kohn	2009	2
20	Thermal stability of 5 nm barrier InAlN/GaN HEMTs Infoscience (Ecole Polytechnique Fédérale de Lausanne) ·Farid Medjdoub, M. Alomari, J.‐F. Carlin, M. Gonschorek, E. Feltin, M. A. Py, N. Grandjean, E. Kohn	2007	4

About M. Alomari

M. Alomari is a scholar working on Condensed Matter Physics, Mechanics of Materials, Bioengineering, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials, having authored 44 papers that have together received 867 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (34 papers), Metal and Thin Film Mechanics (14 papers), Silicon Carbide Semiconductor Technologies (13 papers), Semiconductor Quantum Structures and Devices (10 papers), Acoustic Wave Resonator Technologies (7 papers), Semiconductor materials and devices (7 papers), Radio Frequency Integrated Circuit Design (6 papers) and Diamond and Carbon-based Materials Research (6 papers). The work is most often cited by research in Condensed Matter Physics (627 citations), Electronic, Optical and Magnetic Materials (243 citations), Electrical and Electronic Engineering (547 citations), Materials Chemistry (333 citations) and Mechanics of Materials (162 citations). M. Alomari has collaborated with scholars based in Germany, Switzerland and France. Frequent co-authors include E. Kohn, N. Grandjean, B. Pécz, M.A. diForte-Poisson, Christophe Gaquière, Farid Medjdoub, David Maier, J.‐F. Carlin, S.L. Delage and C. Dua. Their work appears in journals such as IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Diamond and Related Materials, IEEE Sensors Journal and Japanese Journal of Applied Physics.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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