N. Kaluza

499 total citations
27 papers, 442 citations indexed

About

N. Kaluza is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, N. Kaluza has authored 27 papers receiving a total of 442 indexed citations (citations by other indexed papers that have themselves been cited), including 25 papers in Condensed Matter Physics, 14 papers in Electrical and Electronic Engineering and 12 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in N. Kaluza's work include GaN-based semiconductor devices and materials (23 papers), Semiconductor materials and devices (12 papers) and ZnO doping and properties (9 papers). N. Kaluza is often cited by papers focused on GaN-based semiconductor devices and materials (23 papers), Semiconductor materials and devices (12 papers) and ZnO doping and properties (9 papers). N. Kaluza collaborates with scholars based in Germany, Slovakia and Egypt. N. Kaluza's co-authors include H. Hardtdegen, Thomas Schäpers, H. Lüth, Vitaliy A. Guzenko, R. Meijers, Raffaella Calarco, J. Gutowski, K. Sebald, Zdeněk Sofer and Patrick Lehnen and has published in prestigious journals such as Nano Letters, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

N. Kaluza

26 papers receiving 428 citations

Peers

Countries citing papers authored by N. Kaluza

Since Specialization

Citations

This map shows the geographic impact of N. Kaluza's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. Kaluza with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. Kaluza more than expected).

Fields of papers citing papers by N. Kaluza

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. Kaluza. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. Kaluza. The network helps show where N. Kaluza may publish in the future.

Co-authorship network of co-authors of N. Kaluza

This figure shows the co-authorship network connecting the top 25 collaborators of N. Kaluza. A scholar is included among the top collaborators of N. Kaluza based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with N. Kaluza. N. Kaluza is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	Growth of buffer structures for AlGaN/GaN HEMT on silicon substrates 2015 ·Università del Salento ·Y. Dikme, H. Kalisch, (unknown), (unknown), (unknown), P. Javorka, M. Marso, N. Kaluza, (unknown), M. Heuken	0
2	Influence of growth temperature on GaN:Cr incorporation and structural properties in MOVPE 2009 ·Journal of Crystal Growth ·(unknown), H. Hardtdegen, N. Kaluza, (unknown), U. Breuer, Hans-Peter Bochem, P. Rutérana, (unknown), (unknown), Thomas Schäpers, Bernd Beschoten, Detlev Grützmacher, H. Lüth	8
3	Enhanced spin-orbit scattering length in narrowAlxGa1−xN∕GaNwires 2007 ·Physical Review B ·Patrick Lehnen, Thomas Schäpers, N. Kaluza, (unknown), H. Hardtdegen	29
4	Influence of the reactor inlet configuration on the AlGaN growth efficiency 2006 ·Journal of Crystal Growth ·E.V. Yakovlev, Р.А. Талалаев, N. Kaluza, H. Hardtdegen, H.L. Bay	7
5	Technology related issues regarding fabrication of AlGaN/GaN-based MOSHFETs with GdScO3 as dielectric 2006 ·(unknown), M. Roeckerath, (unknown), (unknown), Andrew J. Fox, J. Schubert, N. Kaluza, M. Marso, H. Lüth, P. Kordoš	1
6	Observation of growth during the MOVPE of III-nitrides 2006 ·Journal de Physique IV (Proceedings) ·H. Hardtdegen, N. Kaluza, (unknown), (unknown), R. Schmidt, Zdeněk Sofer, J.‐T. Zettler	4
7	Weak antilocalization in gate-controlledAlxGa1−xN∕GaNtwo-dimensional electron gases 2006 ·Physical Review B ·(unknown), (unknown), N. Kaluza, Vitaliy A. Guzenko, H. Hardtdegen, Thomas Schäpers	46
8	New method for the in situ determination of Al_xGa_1–xN composition in MOVPE by real‐time optical reflectance 2006 ·physica status solidi (a) ·H. Hardtdegen, N. Kaluza, Zdeněk Sofer, (unknown), (unknown), H.L. Bay, Y. Dikme, H. Kalisch, Rolf A. Jansen, M. Heuken, A. Strittmatter, L. Reißmann, D. Bimberg, J.‐T. Zettler	2
9	The State of Strain in Single GaN Nanocolumns As Derived from Micro-Photoluminescence Measurements 2006 ·Nano Letters ·(unknown), K. Sebald, H. Hardtdegen, R. Meijers, Raffaella Calarco, (unknown), N. Kaluza, J. Gutowski, H. Lüth	90
10	Weak antilocalization in a polarization-doped AlxGa1−xN∕GaN heterostructure with single subband occupation 2006 ·Applied Physics Letters ·(unknown), Thomas Schäpers, N. Kaluza, H. Hardtdegen, Vitaliy A. Guzenko	50
11	Spin‐orbit coupling in gated AlGaN/GaN 2‐dimensional electron gases 2006 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Thomas Schäpers, (unknown), (unknown), N. Kaluza, Vitaliy A. Guzenko, H. Hardtdegen	5
12	Uniform III‐nitride growth in single wafer horizontal MOVPE reactors 2005 ·physica status solidi (a) ·H. Hardtdegen, N. Kaluza, (unknown), P. Javorka, (unknown), A. Alam, Thomas Schmitt, R. Beccard	10
13	Use of wafer temperature determination for the study of unintentional parameter influences for the MOVPE of III‐nitrides 2005 ·physica status solidi (b) ·H. Hardtdegen, N. Kaluza, (unknown), (unknown), Zdeněk Sofer, M. Zorn, K. Haberland, J.‐T. Zettler	7
14	Epitaxial growth of Fe on GaN(0001): structural and magnetic properties 2005 ·physica status solidi (a) ·Raffaella Calarco, R. Meijers, N. Kaluza, Vitaliy A. Guzenko, (unknown), Thomas Schäpers, H. Lüth, Mikhail Fonin, S. Krzyk, (unknown), Bernd Beschoten, G. Güntherodt	12
15	Epitaxial growth and characterization of Fe thin films on wurtzite GaN(0001) 2005 ·Journal of Crystal Growth ·R. Meijers, Raffaella Calarco, N. Kaluza, H. Hardtdegen, (unknown), H.L. Bay, H. Lüth, (unknown), Daniel E. Bürgler	24
16	MOVPE growth and in situ characterization of GaN layers on sapphire substrates 2004 ·physica status solidi (a) ·H. Hardtdegen, N. Kaluza, R. Schmidt, (unknown), E.V. Yakovlev, Р.А. Талалаев, Yu.N. Makarov, J.‐T. Zettler	17
17	MOVPE GaN growth: determination of activation energy using in-situ reflectometry 2004 ·Journal of Crystal Growth ·N. Kaluza, (unknown), H. Hardtdegen, (unknown)	10
18	Use of SiC band gap temperature dependence for absolute calibration of emissivity corrected pyrometers in III-nitride MOVPE 2004 ·Journal of Crystal Growth ·(unknown), N. Kaluza, H. Hardtdegen, M. Zorn, K. Haberland, J.‐T. Zettler	10
19	MOVPE process for horizontal reactors with reduced parasitic deposition 2004 ·Journal of Crystal Growth ·H. Hardtdegen, N. Kaluza, (unknown), R. Schmidt, (unknown), E.V. Yakovlev, Р.А. Талалаев, Yu.N. Makarov	12
20	Si(111) as alternative substrate for AlGaN/GaN HEMT 2003 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Y. Dikme, (unknown), (unknown), (unknown), H. Kalisch, J. Woitok, (unknown), P. Javorka, M. Marso, N. Kaluza, Rolf A. Jansen, M. Heuken	4

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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