J. C. Bourgoin

713 total citations
52 papers, 602 citations indexed

About

J. C. Bourgoin is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry. According to data from OpenAlex, J. C. Bourgoin has authored 52 papers receiving a total of 602 indexed citations (citations by other indexed papers that have themselves been cited), including 37 papers in Electrical and Electronic Engineering, 35 papers in Atomic and Molecular Physics, and Optics and 9 papers in Materials Chemistry. Recurrent topics in J. C. Bourgoin's work include Semiconductor Quantum Structures and Devices (24 papers), Semiconductor materials and devices (23 papers) and Semiconductor materials and interfaces (16 papers). J. C. Bourgoin is often cited by papers focused on Semiconductor Quantum Structures and Devices (24 papers), Semiconductor materials and devices (23 papers) and Semiconductor materials and interfaces (16 papers). J. C. Bourgoin collaborates with scholars based in France, Tunisia and Portugal. J. C. Bourgoin's co-authors include D. Stiévenard, M. Lannoo, H. J. von Bardeleben, M. Zazoui, H. Mutka, L. Zuppiroli, P. Molinié, Song Feng, V. Donchev and H. Mâaref and has published in prestigious journals such as Physical Review Letters, Physical review. B, Condensed matter and Applied Physics Letters.

In The Last Decade

J. C. Bourgoin

50 papers receiving 573 citations

Peers

J. C. Bourgoin

EEE

AMPO

MC

CMP

EOMM

A.H. Kean United Kingdom

A. G. Thompson United States

W. Reichert United States

H. Abad United States

N. D. Wilsey United States

F. Chevrier France

P. Kaczor Poland

M. Baudet France

Avid Kamgar United States

P. Roentgen Switzerland

A.H. Kean United Kingdom

J. C. Bourgoin

385 ×0.9

EEE

386 ×0.9

AMPO

171 ×1.3

MC

89 ×1.3

CMP

42 ×0.7

EOMM

Citations per year, relative to J. C. Bourgoin J. C. Bourgoin (= 1×) peers A.H. Kean

Countries citing papers authored by J. C. Bourgoin

Since Specialization

Citations

This map shows the geographic impact of J. C. Bourgoin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. C. Bourgoin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. C. Bourgoin more than expected).

Fields of papers citing papers by J. C. Bourgoin

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. C. Bourgoin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. C. Bourgoin. The network helps show where J. C. Bourgoin may publish in the future.

Co-authorship network of co-authors of J. C. Bourgoin

This figure shows the co-authorship network connecting the top 25 collaborators of J. C. Bourgoin. A scholar is included among the top collaborators of J. C. Bourgoin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. C. Bourgoin. J. C. Bourgoin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

1.

Bourgoin, J. C., et al.. (2014). On the Prediction of Solar Cell Degradation in Space. ESASP. 719. 1. 1 indexed citations

2.

Baur, C., et al.. (2014). Performance Analysis of AZUR 3G28 Triple-Junction Solar Cells Optimized for Operation in Jupiter Environment. Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft). 719. 5. 3 indexed citations

3.

Bourgoin, J. C. & K. Khirouni. (2013). Evaluation of the degradation of solar cells in space. 2(3).

4.

Zazoui, M., et al.. (2011). Analysis of Multijunction solar cells: Electroluminescence study. PRSM. 5(2). 4 indexed citations

5.

Bchetnia, A., A. Rebey, J.L. Fave, J. C. Bourgoin, & B. El Jani. (2006). Effects of thermal annealing onn-type GaAs:V grown by MOCVD. Journal of Physics D Applied Physics. 39(7). 1337–1341. 5 indexed citations

6.

Jabbour, Joey M., M. Zazoui, G.C. Sun, J. C. Bourgoin, & O. Gilard. (2005). Radiation resistance of GaAs–GaAlAs vertical cavity surface emitting lasers. Journal of Applied Physics. 97(4). 6 indexed citations

7.

Bourgoin, J. C., M. Zazoui, G.C. Sun, et al.. (2003). Non-empirical modelization of space degradation of multijunction cells. Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft). 1. 709–711. 2 indexed citations

8.

Bourgoin, J. C., et al.. (1997). Detection of the metastable state of the EL2 defect in GaAs. Journal of Applied Physics. 82(8). 4124–4125. 10 indexed citations

9.

Zazoui, M., et al.. (1993). Electron emission from defects in multiband semiconductors. Physical review. B, Condensed matter. 47(8). 4296–4300. 4 indexed citations

10.

Feng, Shipeng, V. Donchev, J. C. Bourgoin, et al.. (1993). Band offset of GaAs-GaInP heterojunctions. Semiconductor Science and Technology. 8(12). 2092–2096. 23 indexed citations

11.

Mâaref, H., et al.. (1992). Minority carrier capture cross section of the EL2 defect in GaAs. Applied Physics Letters. 61(20). 2452–2454. 10 indexed citations

12.

Pons, Dirk & J. C. Bourgoin. (1991). Carrier hopping capture in semiconductors. Physical review. B, Condensed matter. 43(14). 11840–11849. 3 indexed citations

13.

Feng, Shipeng, J. C. Bourgoin, F. Omnès, & Manijeh Razeghi. (1991). Defects in organometallic vapor-phase epitaxy-grown GaInP layers. Applied Physics Letters. 59(8). 941–943. 27 indexed citations

14.

Bourgoin, J. C.. (1990). Physics of DX Centers in GaAs Alloys. Trans Tech Publications Ltd. eBooks. 51 indexed citations

15.

Bardeleben, H. J. von & J. C. Bourgoin. (1989). The Metastability of the EL2 and DX Defects in GaAs and 3-5 Alloys. MRS Proceedings. 163.

16.

Bourgoin, J. C. & H. J. von Bardeleben. (1989). Donors in semiconductors and metastability. Physical review. B, Condensed matter. 40(14). 10006–10008. 10 indexed citations

17.

Bourgoin, J. C. & M. Lannoo. (1988). A critical look at EL2 models. Revue de Physique Appliquée. 23(5). 863–869. 10 indexed citations

18.

Bardeleben, H. J. von, J. C. Bourgoin, & D. Stiévenard. (1988). Compensation mechanism in semi-insulating GaAs: The role of intrinsic acceptor defects. Applied Physics Letters. 53(12). 1089–1091. 27 indexed citations

19.

Bardeleben, H. J. von, N. T. Bagraev, & J. C. Bourgoin. (1987). Optically induced regeneration of the stable configuration of the EL2 defect in GaAs. Applied Physics Letters. 51(18). 1451–1453. 21 indexed citations

20.

Stiévenard, D., M. Lannoo, & J. C. Bourgoin. (1985). Transient capacitance spectroscopy in heavily compensated semiconductors. Solid-State Electronics. 28(5). 485–492. 42 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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