J.‐F. Carlin

1.2k total citations
40 papers, 1.0k citations indexed

About

J.‐F. Carlin is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, J.‐F. Carlin has authored 40 papers receiving a total of 1.0k indexed citations (citations by other indexed papers that have themselves been cited), including 29 papers in Condensed Matter Physics, 22 papers in Electrical and Electronic Engineering and 18 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in J.‐F. Carlin's work include GaN-based semiconductor devices and materials (27 papers), Semiconductor Quantum Structures and Devices (14 papers) and Semiconductor materials and devices (12 papers). J.‐F. Carlin is often cited by papers focused on GaN-based semiconductor devices and materials (27 papers), Semiconductor Quantum Structures and Devices (14 papers) and Semiconductor materials and devices (12 papers). J.‐F. Carlin collaborates with scholars based in Switzerland, Germany and Austria. J.‐F. Carlin's co-authors include M. Ilegems, N. Grandjean, E. Feltin, J. Dorsaz, R. Butté, U. Oesterlé, R. P. Stanley, J. Kuzmı́k, D. Pogány and G. Christmann and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

J.‐F. Carlin

38 papers receiving 975 citations

Peers

Countries citing papers authored by J.‐F. Carlin

Since Specialization

Citations

This map shows the geographic impact of J.‐F. Carlin's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J.‐F. Carlin with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J.‐F. Carlin more than expected).

Fields of papers citing papers by J.‐F. Carlin

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J.‐F. Carlin. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J.‐F. Carlin. The network helps show where J.‐F. Carlin may publish in the future.

Co-authorship network of co-authors of J.‐F. Carlin

This figure shows the co-authorship network connecting the top 25 collaborators of J.‐F. Carlin. A scholar is included among the top collaborators of J.‐F. Carlin based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J.‐F. Carlin. J.‐F. Carlin is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work	Indexed citations
1	Origin of giant enhancement of phase contrast in electron holography of modulation-doped n-type GaN 2024 ·Ultramicroscopy ·(unknown), (unknown), Qianqian Lan, J.‐F. Carlin, R. Butté, N. Grandjean, Rafal E. Dunin–Borkowski, Ph. Ebert	0
2	Smooth GaN membranes by polarization-assisted electrochemical etching 2021 ·Applied Physics Letters ·(unknown), (unknown), (unknown), J.‐F. Carlin, N. Grandjean, Åsa Haglund	11
3	Interplay of intrinsic and extrinsic states in pinning and passivation of m-plane facets of GaN n-p-n junctions 2020 ·Journal of Applied Physics ·(unknown), (unknown), (unknown), J.‐F. Carlin, R. Butté, N. Grandjean, H. Eisele, Rafal E. Dunin–Borkowski, Ph. Ebert	2
4	Fermi-level pinning and intrinsic surface states of Al1−xInxN(101¯) surfaces 2017 ·Applied Physics Letters ·(unknown), (unknown), L. Lymperakis, Jörg Neugebauer, H. Eisele, J.‐F. Carlin, R. Butté, N. Grandjean, Rafal E. Dunin–Borkowski, Ph. Ebert	5
5	GaN-based superluminescent diodes with long lifetime 2016 ·Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE ·Antonino Castiglia, Marco Rossetti, N. Matuschek, (unknown), Marcus Duelk, C Velez, J.‐F. Carlin, N. Grandjean	12
6	GaN superluminescent diodes and their applications 2016 ·C Velez, Marcus Duelk, (unknown), Marco Rossetti, N. Grandjean, J.‐F. Carlin	4
7	High temperature stability of nitride-based power HEMTs 2010 ·OPen Access Repositorium der Universität Ulm (OPARU) (Ulm University) ·David Maier, M. Alomari, E. Kohn, M.A. diForte-Poisson, C. Dua, S.L. Delage, N. Grandjean, J.‐F. Carlin, Andrey Chuvilin, Ute Kaiser, David Troadec, Christophe Gaquière	2
8	Current collapse reduction in InAlN/GaN MOS HEMTs by in situ surface pre-treatment and atomic layer deposition of ZrO ₂ high- k gate dielectrics 2009 ·Electronics Letters ·S. Abermann, G. Pozzovivo, J. Kuzmı́k, Clemens Ostermaier, Christoph Henkel, Ole Bethge, G. Strasser, D. Pogány, J.‐F. Carlin, N. Grandjean, E. Bertagnolli	16
9	Above 500 °C operation of InAlN/GaN HEMTs 2009 ·David Maier, M. Alomari, N. Grandjean, J.‐F. Carlin, (unknown), C. Dua, Andrey Chuvilin, David Troadec, Christophe Gaquière, Ute Kaiser, S.L. Delage, E. Kohn	4
10	Off‐state breakdown in InAlN/AlN/GaN high electron mobility transistors 2009 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·J. Kuzmı́k, G. Pozzovivo, J.‐F. Carlin, M. Gonschorek, E. Feltin, N. Grandjean, G. Strasser, D. Pogány, E. Gornik	15
11	Influence of GaN capping on performance of InAlN/AlN/GaN MOS‐HEMT with Al₂O₃ gate insulation grown by CVD 2008 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·G. Pozzovivo, J. Kuzmı́k, S. Golka, K. Čičo, K. Fröhlich, J.‐F. Carlin, M. Gonschorek, N. Grandjean, W. Schrenk, G. Strasser, D. Pogány	12
12	Evaluation of AlInN/GaN HEMTs on sapphire substrate in microwave, time and temperature domains 2007 ·Electronics Letters ·Farid Medjdoub, D. Ducatteau, Christophe Gaquière, J.‐F. Carlin, M. Gonschorek, E. Feltin, M. A. Py, N. Grandjean, E. Kohn	16
13	Thermal stability of 5 nm barrier InAlN/GaN HEMTs 2007 ·Infoscience (Ecole Polytechnique Fédérale de Lausanne) ·Farid Medjdoub, M. Alomari, J.‐F. Carlin, M. Gonschorek, E. Feltin, M. A. Py, N. Grandjean, E. Kohn	4
14	MOCVD of HfO₂ and ZrO₂ high-k gate dielectrics for InAlN/AlN/GaN MOS-HEMTs 2007 ·Semiconductor Science and Technology ·S. Abermann, G. Pozzovivo, J. Kuzmı́k, G. Strasser, D. Pogány, J.‐F. Carlin, N. Grandjean, E. Bertagnolli	61
15	Progresses in III‐nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials 2005 ·physica status solidi (b) ·J.‐F. Carlin, (unknown), J. Dorsaz, Sylvain Nicolay, G. Christmann, E. Feltin, R. Butté, N. Grandjean	131
16	Lattice-matched distributed Bragg reflectors for nitride-based vertical cavity surface emitting lasers 2005 ·Electronics Letters ·E. Feltin, R. Butté, J.‐F. Carlin, J. Dorsaz, N. Grandjean, M. Ilegems	36
17	In-Situ Monitoring of GaN Growth by Hydride Vapor Phase Epitaxy 2002 ·physica status solidi (a) ·D. Martin, J.‐F. Carlin, V. Wagner, (unknown), M. Ilegems	9
18	Tuning InAs/GaAs quantum dot properties under Stranski-Krastanov growth mode for 1.3 μm applications 2002 ·Journal of Applied Physics ·(unknown), A. Markus, Andrea Fiore, U. Oesterlé, R. P. Stanley, J.‐F. Carlin, R. Houdré, M. Ilegems, L. Lazzarini, L. Nasi, Maria Teresa Todaro, E. Piscopiello, R. Cingolani, M. Catalano, J. Kątcki, J. Ratajczak	87
19	Experimental S-2DEG-S junction characteristics and a novel interpretation 1996 ·Czechoslovak Journal of Physics ·(unknown), C. J. P. M. Harmans, J. E. Mooij, J.‐F. Carlin, A. Rudra, M. Ilegems	1
20	Quantitative study of the incorporation of group III elements in chemical beam epitaxy of GaInAsP alloys 1993 ·Journal of Crystal Growth ·J.‐F. Carlin, A. Rudra, M. Ilegems	7

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact