Diego Marti

743 citations

27 papers · 601 indexed · h-index 14

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 17
- GaN-based semiconductor devices and materials 17
Electrical and Electronic Engineering 26
- Radio Frequency Integrated Circuit Design 24
- Semiconductor materials and devices 7
- Photonic and Optical Devices 3
- Microwave Engineering and Waveguides 2

Co-authors: C. R. Bolognesi Andreas R. Alt Stefano Tirelli N. Grandjean J.‐F. Carlin Haifeng Sun Lorenzo Lugani J. C. Roberts
Journals: IEEE Electron Device Letters (6 papers)Applied Physics Express (3 papers)IEEE Transactions on Electron Devices (2 papers)Japanese Journal of Applied Physics (1 paper)IEEE Microwave Magazine (1 paper)
Partner nations: Switzerland France Czechia

In The Last Decade

Diego Marti

25 papers receiving 556 citations

Peers

Countries citing papers authored by Diego Marti

Since Specialization

Citations

This map shows the geographic impact of Diego Marti's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Diego Marti with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Diego Marti more than expected).

Fields of papers citing papers by Diego Marti

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Diego Marti. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Diego Marti. The network helps show where Diego Marti may publish in the future.

Co-authors

The 25 scholars most cited alongside Diego Marti, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Diego Marti Line = papers co-authored together Diego Marti links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	A 16-GHz Bandwidth Cryogenic IF Amplifier With 4-K Noise Temperature for Sub-mm Radio-Astronomy Receivers IEEE Transactions on Terahertz Science and Technology ·I. López-Fernández, P.-A. Forest, 青田達也, I. Malo, Ciprian Bulz, أسماء فتحي السيد علي, Diego Marti, Ronald Hesper	2024	1
2	Highly-Linear InP/GaAsSb DHBTs with 18.2 dBm OIP3 at 45 GHz: Comparison of Common-Base and Common-Emitter Structures He-Yu Zhang, García-Jiménez Jesús, S. Fantoni Quinton, Wei Quan, Diego Marti, Liewe S. Anema, Olivier Ostinelli, C. R. Bolognesi	2022	4
3	InP/GaAsSb Double Heterojunction Bipolar Transistor Emitter-Fin Technology With f _MAX = 1.2 THz IEEE Transactions on Electron Devices ·S. Fantoni Quinton, García-Jiménez Jesús, He-Yu Zhang, أسماء فتحي السيد علي, Werner Van Appeldorn, Daxin Han, Diego Marti, Jane M Deacon, Saveria Lory Croce’, Olivier Ostinelli, C. R. Bolognesi	2022	27
4	Demonstration of 300-nm InP/GaInAsSb DHBT MMIC Technology in a 60-160GHz Ultra-Broadband Amplifier Test Vehicle He-Yu Zhang, S. Fantoni Quinton, García-Jiménez Jesús, Diego Marti, أسماء فتحي السيد علي, Kuan-Zhen, Olivier Ostinelli, C. R. Bolognesi	2022	2
5	High Power InP/Ga(In)AsSb DHBTs for Millimeter-Wave PAs: 14.5 dBm Output Power and 10.4 mw/μm² Power Density at 94 GHz SHILAP Revista de lepidopterología ·He-Yu Zhang, S. Fantoni Quinton, García-Jiménez Jesús, أسماء فتحي السيد علي, Diego Marti, Mojtaba Ebrahimi, Olivier Ostinelli, C. R. Bolognesi	2022	8
6	InP/GaAsSb Double Heterojunction Bipolar Transistor Technology with f_MAX = 1.2 THz 2021 IEEE International Electron Devices Meeting (IEDM) ·S. Fantoni Quinton, García-Jiménez Jesús, He-Yu Zhang, أسماء فتحي السيد علي, Sophie McIntyre, Daxin Han, Diego Marti, Jane M Deacon, Saveria Lory Croce’, Olivier Ostinelli, C. R. Bolognesi	2021	2
7	Type-II GaInAsSb/InP Uniform Absorber High Speed Uni-Traveling Carrier Photodiodes Journal of Lightwave Technology ·S. Fantoni Quinton, Saveria Lory Croce’, أسماء فتحي السيد علي, Diego Marti, He-Yu Zhang, García-Jiménez Jesús, Wei Quan, Martin Leich, Olivier Ostinelli, C. R. Bolognesi	2020	13
8	III-V GaAs and INP HBT devices for 4G & 5G wireless applications C. R. Bolognesi, Wei Quan, S. Fantoni Quinton, Diego Marti, Olivier Ostinelli	2018	5
9	<inline-formula> <tex-math notation="LaTeX">$W$ </tex-math> </inline-formula>-Band MMIC Amplifiers Based on AlInN/GaN HEMTs Grown on Silicon IEEE Electron Device Letters ·Diego Marti, Lorenzo Lugani, J.‐F. Carlin, Marco Malinverni, N. Grandjean, C. R. Bolognesi	2016	15
10	AlInN/GaN HEMTs on SiC and on silicon with regrown ohmic contacts by selective ammonia MBE Stefano Tirelli, Diego Marti, Lorenzo Lugani, Marco Malinverni, He Zhiman, J.‐F. Carlin, N. Grandjean, C. R. Bolognesi	2015	1
11	n+-GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts Applied Physics Letters ·Lorenzo Lugani, Marco Malinverni, Stefano Tirelli, Diego Marti, VIRGINIA MABEL BOARI DE GREISSING, J.‐F. Carlin, C. R. Bolognesi, N. Grandjean	2014	24
12	A $W$-Band On-Wafer Active Load–Pull System Based on Down-Conversion Techniques IEEE Transactions on Microwave Theory and Techniques ·Valeria Teppati, Hansruedi Benedickter, Diego Marti, Apta Kania Damayanti, Stefano Tirelli, 김지섭, أسماء فتحي السيد علي, Fatema Al Hour, Olivier Ostinelli, C. R. Bolognesi	2014	20
13	AlN-Capped AlInN/GaN High Electron Mobility Transistors with 4.5 W/mm Output Power at 40 GHz Japanese Journal of Applied Physics ·Stefano Tirelli, Diego Marti, Lorenzo Lugani, J.‐F. Carlin, N. Grandjean, C. R. Bolognesi	2013	7
14	Transistor Modeling: Robust Small-Signal Equivalent Circuit Extraction in Various HEMT Technologies IEEE Microwave Magazine ·Andreas R. Alt, Diego Marti, C. R. Bolognesi	2013	88
15	RF Performance of AlGaN/GaN High-Electron-Mobility Transistors Grown on Silicon (110) Applied Physics Express ·Diego Marti, C. R. Bolognesi, Y. Cordier, Magdalena Chmielowska, Mohammed Réda Ramdani	2011	15
16	110 GHz characterization of coplanar waveguides on GaN-on-Si substrates Diego Marti, Mathias Vetter, Andreas R. Alt, Liang Liu, Hansruedi Benedickter, C. R. Bolognesi	2011	4
17	Fully Passivated AlInN/GaN HEMTs With $f_{\rm T}/f_{\rm MAX}$ of 205/220 GHz IEEE Electron Device Letters ·Stefano Tirelli, Diego Marti, Haifeng Sun, Andreas R. Alt, J.‐F. Carlin, N. Grandjean, C. R. Bolognesi	2011	65
18	Millimeter-wave GaN-based HEMT development at ETH-Zürich International Journal of Microwave and Wireless Technologies ·Haifeng Sun, Diego Marti, Stefano Tirelli, Andreas R. Alt, Hansruedi Benedickter, C. R. Bolognesi	2010	6
19	107-GHz (Al,Ga)N/GaN HEMTs on Silicon With Improved Maximum Oscillation Frequencies IEEE Electron Device Letters ·Stefano Tirelli, Diego Marti, Haifeng Sun, Andreas R. Alt, H. Benedickter, E. L. Piner, C. R. Bolognesi	2010	49
20	Small-Signal Microwave Performance Comparison of Deep Submicron AlGaN/GaN High Electron Mobility Transistors on High-Resistivity Silicon and Insulating Substrates Applied Physics Express ·Haifeng Sun, Andreas R. Alt, Diego Marti, Mathias Vetter, Hansruedi Benedickter, C. R. Bolognesi	2009	8

About Diego Marti

Diego Marti is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Biomedical Engineering, having authored 27 papers that have together received 601 indexed citations. Recurring topics across this work include Radio Frequency Integrated Circuit Design (24 papers), GaN-based semiconductor devices and materials (17 papers), Semiconductor Quantum Structures and Devices (11 papers), Semiconductor materials and devices (7 papers), Ga2O3 and related materials (6 papers), Photonic and Optical Devices (3 papers), Acoustic Wave Resonator Technologies (3 papers) and Microwave Engineering and Waveguides (2 papers). The work is most often cited by research in Condensed Matter Physics (470 citations), Electronic, Optical and Magnetic Materials (183 citations), Electrical and Electronic Engineering (504 citations), Atomic and Molecular Physics, and Optics (177 citations) and Materials Chemistry (60 citations). Diego Marti has collaborated with scholars based in Switzerland, France and Czechia. Frequent co-authors include C. R. Bolognesi, Andreas R. Alt, Stefano Tirelli, N. Grandjean, J.‐F. Carlin, Haifeng Sun, Lorenzo Lugani, J. C. Roberts, Marco Malinverni and Hansruedi Benedickter. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Express, IEEE Transactions on Electron Devices, Japanese Journal of Applied Physics and IEEE Microwave Magazine.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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