R. Schwindt

1.0k citations

30 papers · 822 indexed · h-index 14

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 24
- GaN-based semiconductor devices and materials 24
Electrical and Electronic Engineering 28
- Radio Frequency Integrated Circuit Design 16
- Silicon Carbide Semiconductor Technologies 9
- Semiconductor materials and devices 9
- Microwave Engineering and Waveguides 4
- Advancements in Semiconductor Devices and Circuit Design 2

Co-authors: V. Kumar I. Adesida A. Kuliev Wu Lu Cam Nguyen E. L. Piner G. Simin M. Asif Khan
Journals: Electronics Letters (7 papers)Solid-State Electronics (4 papers)IEEE Transactions on Microwave Theory and Techniques (4 papers)IEEE Electron Device Letters (2 papers)IEEE Microwave and Wireless Components Letters (2 papers)
Partner nations: United States South Korea Türkiye

In The Last Decade

R. Schwindt

30 papers receiving 764 citations

Peers

Countries citing papers authored by R. Schwindt

Since Specialization

Citations

This map shows the geographic impact of R. Schwindt's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Schwindt with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Schwindt more than expected).

Fields of papers citing papers by R. Schwindt

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Schwindt. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Schwindt. The network helps show where R. Schwindt may publish in the future.

Co-authorship network

The 25 scholars most cited alongside R. Schwindt, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with R. Schwindt Line = papers co-authored together R. Schwindt links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	A Reliable Low Gate Bias Model Extraction Procedure for AlGaN/GaN HEMTs Łukasz Krajewski, V. Kumar, R. Schwindt, I. Adesida	2006	5
2	A low gate bias model extraction technique for AlGaN/GaN HEMTs IEEE Transactions on Microwave Theory and Techniques ·Guang Chen, V. Kumar, R. Schwindt, I. Adesida	2006	62
3	Temperature-dependence of a GaN-based HEMT monolithic X- band low noise amplifier Bilkent University Institutional Repository (Bilkent University) ·R. Schwindt, V. Kumar, Özgür Aktaş, Jesús Toledo Arriaza, I. Adesida	2005	10
4	GaN electronics with high electron mobility transistors I. Adesida, V. Kumar, Jolanta Martyncevienė, A. Kuliev, R. Schwindt, 玉江山邨	2004	1
5	Microwave noise performances of AlGaN/GaN HEMTs on semi-insulating 6H-SiC substrates Electronics Letters ·Jeri Wohnhas, V. Kumar, R. Schwindt, A. Kuliev, R. Birkhahn, D. Gotthold, Shiping Guo, Ida M Fortin, P. Harston	2004	9
6	Polyimide Passivated AlGaN–GaN HFETs With 7.65 W/mm at 18 GHz IEEE Electron Device Letters ·Aw Latajka, Shyh‐Chiang Shen, R. Schwindt, K. William Watson, U. Chowdhury, M.M. Wong, Ting Zhu, Dongwon Yoo, Russell D. Dupuis, Meixin Feng	2004	14
7	High performance 0.25 µm gate-length AlGaN/GaN HEMTs on 6H-SiC with power density of 6.7 W/mm at 18 GHz Electronics Letters ·V. Kumar, Jeri Wohnhas, A. Kuliev, Özgür Aktaş, R. Schwindt, R. Birkhahn, D. Gotthold, Efrat Katz, Ida M Fortin, I. Adesida	2003	3
8	High performance 0.25 μm gate-length AlGaN/GaN HEMTs on sapphire with power density of over 4.5 W/mm at 20 GHz Solid-State Electronics ·V. Kumar, A. Kuliev, R. Schwindt, Intissar Tabsh Abou-Khadra, G. Simin, J. Yang, M. Asif Khan, I. Adesida	2003	31
9	Millimeter-wave high-power 0.25-/spl mu/m gate-length AlGaN/GaN HEMTs on SiC substrates IEEE Microwave and Wireless Components Letters ·R. Schwindt, V. Kumar, A. Kuliev, G. Simin, Jinwei Yang, M.A. Khan, Intissar Tabsh Abou-Khadra, I. Adesida	2003	8
10	High performance 0.25 μm gate-length AlGaN/GaN HEMTs on sapphire with transconductance of over 400 mS/mm Electronics Letters ·V. Kumar, Wu Lu, Farid Khan, R. Schwindt, A. Kuliev, G. Simin, J. Yang, M. Asif Khan, I. Adesida	2002	13
11	DC, RF, and microwave noise performances of AlGaN/GaN HEMTs on sapphire substrates IEEE Transactions on Microwave Theory and Techniques ·Wu Lu, V. Kumar, R. Schwindt, E. L. Piner, I. Adesida	2002	35
12	A comparative study of surface passivation on AlGaN/GaN HEMTs Solid-State Electronics ·Wu Lu, V. Kumar, R. Schwindt, E. L. Piner, I. Adesida	2002	110
13	AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz IEEE Electron Device Letters ·V. Kumar, Wu Lu, R. Schwindt, A. Kuliev, G. Simin, J. Yang, M. Asif Khan, I. Adesida	2002	191
14	Monolithic integration of InAlAs/InGaAs enhancement and depletion (E/D)-mode metamorphic HEMTs on GaAs substrate D.C. Dumka, W. E. Hoke, P. J. Lemonias, R. Schwindt, Dylan Meinster, I. Adesida	2002	2
15	High-Performance AlGaN/GaN High Electron Mobility Transistors on SiC physica status solidi (a) ·V. Kumar, A. Kuliev, R. Schwindt, G. Simin, Jinwei Yang, M. Asif Khan, I. Adesida	2002	5
16	A CAD procedure for the double-layer broadside-coupled Marchand balun R. Schwindt, Cam Nguyen	2002	4
17	A new compact band-pass filter employing three parallel-coupled lines R. Schwindt, Cam Nguyen	2002	2
18	Generalized scattering parameters for two coupled transmission-line structures in an inhomogeneous medium Microwave and Optical Technology Letters ·R. Schwindt, Cam Nguyen	1996	4
19	Computer-aided analysis and design of a planar multilayer Marchand balun IEEE Transactions on Microwave Theory and Techniques ·R. Schwindt, Cam Nguyen	1994	31
20	Spectral domain analysis of three symmetric coupled lines and application to a new bandpass filter IEEE Transactions on Microwave Theory and Techniques ·R. Schwindt, Cam Nguyen	1994	36

About R. Schwindt

R. Schwindt is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Biomedical Engineering, having authored 30 papers that have together received 822 indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (24 papers), Radio Frequency Integrated Circuit Design (16 papers), Semiconductor Quantum Structures and Devices (9 papers), Silicon Carbide Semiconductor Technologies (9 papers), Semiconductor materials and devices (9 papers), Ga2O3 and related materials (7 papers), Microwave Engineering and Waveguides (4 papers) and Advancements in Semiconductor Devices and Circuit Design (2 papers). The work is most often cited by research in Condensed Matter Physics (687 citations), Electronic, Optical and Magnetic Materials (238 citations), Electrical and Electronic Engineering (676 citations), Atomic and Molecular Physics, and Optics (254 citations) and Materials Chemistry (106 citations). R. Schwindt has collaborated with scholars based in United States, South Korea and Türkiye. Frequent co-authors include V. Kumar, I. Adesida, A. Kuliev, Wu Lu, Cam Nguyen, E. L. Piner, G. Simin, M. Asif Khan, J. Yang and Guang Chen. Their work appears in journals such as Electronics Letters, Solid-State Electronics, IEEE Transactions on Microwave Theory and Techniques, IEEE Electron Device Letters and IEEE Microwave and Wireless Components Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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