R. Schwindt

1.0k total citations
30 papers, 822 citations indexed

About

R. Schwindt is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, R. Schwindt has authored 30 papers receiving a total of 822 indexed citations (citations by other indexed papers that have themselves been cited), including 28 papers in Electrical and Electronic Engineering, 24 papers in Condensed Matter Physics and 10 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in R. Schwindt's work include GaN-based semiconductor devices and materials (24 papers), Radio Frequency Integrated Circuit Design (16 papers) and Semiconductor Quantum Structures and Devices (9 papers). R. Schwindt is often cited by papers focused on GaN-based semiconductor devices and materials (24 papers), Radio Frequency Integrated Circuit Design (16 papers) and Semiconductor Quantum Structures and Devices (9 papers). R. Schwindt collaborates with scholars based in United States, South Korea and Türkiye. R. Schwindt's co-authors include V. Kumar, I. Adesida, A. Kuliev, Wu Lu, Cam Nguyen, E. L. Piner, G. Simin, M. Asif Khan, J. Yang and Guang Chen and has published in prestigious journals such as IEEE Transactions on Microwave Theory and Techniques, IEEE Electron Device Letters and Electronics Letters.

In The Last Decade

R. Schwindt

30 papers receiving 764 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
R. Schwindt United States 14 687 676 254 238 106 30 822
Yasuo Ohno Japan 17 706 1.0× 832 1.2× 262 1.0× 240 1.0× 179 1.7× 90 1.0k
H. Blanck France 17 503 0.7× 693 1.0× 271 1.1× 120 0.5× 96 0.9× 78 788
Ioulia Smorchkova United States 16 586 0.9× 610 0.9× 206 0.8× 117 0.5× 92 0.9× 31 724
Tongde Huang China 13 371 0.5× 442 0.7× 133 0.5× 189 0.8× 156 1.5× 44 586
M. Antcliffe United States 16 565 0.8× 707 1.0× 241 0.9× 199 0.8× 255 2.4× 27 884
P. Janke United States 12 373 0.5× 434 0.6× 162 0.6× 121 0.5× 53 0.5× 23 505
L. Kehias United States 10 948 1.4× 823 1.2× 288 1.1× 337 1.4× 189 1.8× 22 1.1k
Yingkui Zheng China 16 645 0.9× 528 0.8× 165 0.6× 328 1.4× 136 1.3× 45 706
S. N. Yurkov Russia 12 222 0.3× 568 0.8× 257 1.0× 85 0.4× 107 1.0× 42 689

Countries citing papers authored by R. Schwindt

Since Specialization
Citations

This map shows the geographic impact of R. Schwindt's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Schwindt with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Schwindt more than expected).

Fields of papers citing papers by R. Schwindt

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Schwindt. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Schwindt. The network helps show where R. Schwindt may publish in the future.

Co-authorship network of co-authors of R. Schwindt

This figure shows the co-authorship network connecting the top 25 collaborators of R. Schwindt. A scholar is included among the top collaborators of R. Schwindt based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Schwindt. R. Schwindt is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Kumar, V., et al.. (2006). A Reliable Low Gate Bias Model Extraction Procedure for AlGaN/GaN HEMTs. 1097–1100. 5 indexed citations
2.
Chen, Guang, V. Kumar, R. Schwindt, & I. Adesida. (2006). A low gate bias model extraction technique for AlGaN/GaN HEMTs. IEEE Transactions on Microwave Theory and Techniques. 54(7). 2949–2953. 62 indexed citations
3.
Schwindt, R., et al.. (2005). Temperature-dependence of a GaN-based HEMT monolithic X- band low noise amplifier. Bilkent University Institutional Repository (Bilkent University). 46. 201–203. 10 indexed citations
4.
Adesida, I., et al.. (2004). GaN electronics with high electron mobility transistors. 1. 89–96. 1 indexed citations
5.
Kumar, V., R. Schwindt, A. Kuliev, et al.. (2004). Microwave noise performances of AlGaN/GaN HEMTs on semi-insulating 6H-SiC substrates. Electronics Letters. 40(1). 80–81. 9 indexed citations
6.
Shen, Shyh‐Chiang, R. Schwindt, U. Chowdhury, et al.. (2004). Polyimide Passivated AlGaN–GaN HFETs With 7.65 W/mm at 18 GHz. IEEE Electron Device Letters. 25(5). 238–240. 14 indexed citations
7.
Kumar, V., A. Kuliev, Özgür Aktaş, et al.. (2003). High performance 0.25 µm gate-length AlGaN/GaN HEMTs on 6H-SiC with power density of 6.7 W/mm at 18 GHz. Electronics Letters. 39(22). 1609–1611. 3 indexed citations
8.
Kumar, V., A. Kuliev, R. Schwindt, et al.. (2003). High performance 0.25 μm gate-length AlGaN/GaN HEMTs on sapphire with power density of over 4.5 W/mm at 20 GHz. Solid-State Electronics. 47(9). 1577–1580. 31 indexed citations
9.
Schwindt, R., V. Kumar, A. Kuliev, et al.. (2003). Millimeter-wave high-power 0.25-/spl mu/m gate-length AlGaN/GaN HEMTs on SiC substrates. IEEE Microwave and Wireless Components Letters. 13(3). 93–95. 8 indexed citations
10.
Kumar, V., Wu Lu, Farid Khan, et al.. (2002). High performance 0.25 μm gate-length AlGaN/GaN HEMTs on sapphire with transconductance of over 400 mS/mm. Electronics Letters. 38(5). 252–253. 13 indexed citations
11.
Lu, Wu, V. Kumar, R. Schwindt, E. L. Piner, & I. Adesida. (2002). DC, RF, and microwave noise performances of AlGaN/GaN HEMTs on sapphire substrates. IEEE Transactions on Microwave Theory and Techniques. 50(11). 2499–2504. 35 indexed citations
12.
Lu, Wu, V. Kumar, R. Schwindt, E. L. Piner, & I. Adesida. (2002). A comparative study of surface passivation on AlGaN/GaN HEMTs. Solid-State Electronics. 46(9). 1441–1444. 110 indexed citations
13.
Kumar, V., Wu Lu, R. Schwindt, et al.. (2002). AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz. IEEE Electron Device Letters. 23(8). 455–457. 191 indexed citations
14.
15.
Kumar, V., A. Kuliev, R. Schwindt, et al.. (2002). High-Performance AlGaN/GaN High Electron Mobility Transistors on SiC. physica status solidi (a). 194(2). 456–459. 5 indexed citations
16.
Schwindt, R. & Cam Nguyen. (2002). A CAD procedure for the double-layer broadside-coupled Marchand balun. 17. 389–391. 4 indexed citations
17.
Schwindt, R. & Cam Nguyen. (2002). A new compact band-pass filter employing three parallel-coupled lines. 245–247. 2 indexed citations
18.
Schwindt, R. & Cam Nguyen. (1996). Generalized scattering parameters for two coupled transmission-line structures in an inhomogeneous medium. Microwave and Optical Technology Letters. 12(6). 335–342. 4 indexed citations
19.
Schwindt, R. & Cam Nguyen. (1994). Computer-aided analysis and design of a planar multilayer Marchand balun. IEEE Transactions on Microwave Theory and Techniques. 42(7). 1429–1434. 31 indexed citations
20.
Schwindt, R. & Cam Nguyen. (1994). Spectral domain analysis of three symmetric coupled lines and application to a new bandpass filter. IEEE Transactions on Microwave Theory and Techniques. 42(7). 1183–1189. 36 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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