J. Dechamp

650 total citations
35 papers, 445 citations indexed

About

J. Dechamp is a scholar working on Electrical and Electronic Engineering, Biomedical Engineering and Materials Chemistry. According to data from OpenAlex, J. Dechamp has authored 35 papers receiving a total of 445 indexed citations (citations by other indexed papers that have themselves been cited), including 30 papers in Electrical and Electronic Engineering, 15 papers in Biomedical Engineering and 7 papers in Materials Chemistry. Recurrent topics in J. Dechamp's work include 3D IC and TSV technologies (22 papers), Electronic Packaging and Soldering Technologies (14 papers) and Advanced Surface Polishing Techniques (9 papers). J. Dechamp is often cited by papers focused on 3D IC and TSV technologies (22 papers), Electronic Packaging and Soldering Technologies (14 papers) and Advanced Surface Polishing Techniques (9 papers). J. Dechamp collaborates with scholars based in France, Belgium and Japan. J. Dechamp's co-authors include L. Di Cioccio, L. Clavelier, Marc Zussy, F. Letertre, A. Tauzin, N. Kernevez, T. Akatsu, R. Taïbi, C. Deguet and Roland Fortunier and has published in prestigious journals such as Journal of Applied Physics, Journal of The Electrochemical Society and Electronics Letters.

In The Last Decade

J. Dechamp

34 papers receiving 432 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
J. Dechamp France 13 373 155 120 81 42 35 445
Vincent Larrey France 10 250 0.7× 85 0.5× 57 0.5× 72 0.9× 32 0.8× 51 330
Ryo Takigawa Japan 16 499 1.3× 123 0.8× 122 1.0× 189 2.3× 24 0.6× 52 559
C. Deguet France 14 494 1.3× 197 1.3× 144 1.2× 142 1.8× 10 0.2× 34 565
T. Sato Japan 9 305 0.8× 111 0.7× 41 0.3× 74 0.9× 40 1.0× 18 367
Hideki Kitada Japan 12 469 1.3× 141 0.9× 44 0.4× 67 0.8× 48 1.1× 61 534
J. Cotte United States 15 502 1.3× 150 1.0× 84 0.7× 155 1.9× 24 0.6× 31 591
Zhiqiang Mu China 9 97 0.3× 110 0.7× 89 0.7× 70 0.9× 41 1.0× 43 257
Y. Le Tiec France 10 431 1.2× 88 0.6× 70 0.6× 62 0.8× 10 0.2× 23 468
J.B. McKitterick United States 8 837 2.2× 222 1.4× 89 0.7× 117 1.4× 80 1.9× 23 907
A Stoffel Germany 10 251 0.7× 133 0.9× 67 0.6× 114 1.4× 10 0.2× 20 341

Countries citing papers authored by J. Dechamp

Since Specialization
Citations

This map shows the geographic impact of J. Dechamp's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by J. Dechamp with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites J. Dechamp more than expected).

Fields of papers citing papers by J. Dechamp

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by J. Dechamp. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by J. Dechamp. The network helps show where J. Dechamp may publish in the future.

Co-authorship network of co-authors of J. Dechamp

This figure shows the co-authorship network connecting the top 25 collaborators of J. Dechamp. A scholar is included among the top collaborators of J. Dechamp based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with J. Dechamp. J. Dechamp is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Borel, S., et al.. (2024). Low Resistance and High Isolation HD TSV for 3-Layer CMOS Image Sensors. SPIRE - Sciences Po Institutional REpository. 771–777. 2 indexed citations
2.
Navone, Christelle, L. Sanchez, B. Rousset, et al.. (2023). Large Diameter Epi-Ready InP on Si (InPOSi) Substrates. SPIRE - Sciences Po Institutional REpository. 1 indexed citations
3.
Montméat, Pierre, et al.. (2022). Initiated Chemical Vapor Deposition of polysiloxane as adhesive nanolayer for silicon wafer bonding. Materials Science in Semiconductor Processing. 148. 106808–106808. 6 indexed citations
4.
Argoud, Maxime, et al.. (2021). Lamination of dry film epoxy molding compounds for 3D packaging: advances and challenges. SPIRE - Sciences Po Institutional REpository. 2043–2048. 3 indexed citations
5.
Montméat, Pierre, et al.. (2020). Temporary polymer bonding for the manufacturing of thin wafers: An innovative low temperature process. Materials Science in Semiconductor Processing. 123. 105550–105550. 3 indexed citations
6.
Dechamp, J., et al.. (2020). Through Mold Interconnection assessment for advanced Fan Out Wafer Level Packaging applications. SPIRE - Sciences Po Institutional REpository. 1–4. 1 indexed citations
7.
Maindron, Tony, et al.. (2019). Curved OLED microdisplays. Journal of the Society for Information Display. 27(11). 723–733. 8 indexed citations
8.
Bousquet, Marie, J. Dechamp, Marc Zussy, et al.. (2019). Single-mode high frequency LiNbO3Film Bulk Acoustic Resonator. SPIRE - Sciences Po Institutional REpository. 84–87. 39 indexed citations
9.
Stewart, Paul, N. Bresson, G. Romano, et al.. (2019). Towards a Complete Direct Hybrid Bonding D2W Integration Flow: Known-Good-Dies and Die Planarization Modules Development. SPIRE - Sciences Po Institutional REpository. 1–5. 9 indexed citations
10.
Jouve, A., Arnaud Garnier, Maxime Argoud, et al.. (2015). Silicon based dry-films evaluation for 2.5D and 3D Wafer-Level system integration improvement. TS1.4.1–TS1.4.8. 1 indexed citations
11.
Baudin, François, L. Di Cioccio, V. Delaye, et al.. (2012). Direct bonding of titanium layers on silicon. Microsystem Technologies. 19(5). 647–653. 6 indexed citations
12.
Taïbi, R., L. Di Cioccio, C. Chappaz, et al.. (2011). Investigation of stress induced voiding and electromigration phenomena on direct copper bonding interconnects for 3D integration. 6.5.1–6.5.4. 24 indexed citations
13.
Signamarcheix, Thomas, T. Salvetat, Emmanuel Nolot, et al.. (2010). 200 mm Silicon on Porous Layer Substrates Made by the Smart Cut Technology for Double Layer Transfer Applications. ECS Transactions. 33(4). 207–216. 1 indexed citations
14.
Widiez, J., S. Saada, J. Dechamp, et al.. (2010). Silicon-On-Diamond layer integration by wafer bonding technology. Diamond and Related Materials. 19(7-9). 796–805. 22 indexed citations
15.
Widiez, J., S. Saada, J. Dechamp, et al.. (2009). Fabrication of Silicon on Diamond (SOD) substrates by either the Bonded and Etched-back SOI (BESOI) or the Smart-Cut™ technology. Solid-State Electronics. 54(2). 158–163. 16 indexed citations
16.
Widiez, J., F. Andrieu, S. Saada, et al.. (2009). First demonstration of heat dissipation improvement in CMOS technology using Silicon-On-Diamond (SOD) substrates. HAL (Le Centre pour la Communication Scientifique Directe). 1–2. 10 indexed citations
17.
Deguet, C., J. Dechamp, Christophe Morales, et al.. (2006). 200 mm Germanium-On-Insulator (GeOI) Structures Realized from Epitaxial Wafers Using the Smart Cut(TM) Technology. ECS Meeting Abstracts. MA2005-01(11). 483–483. 3 indexed citations
18.
Cioccio, L. Di, B. Biasse, M. Kostrzewa, et al.. (2006). Recent Results on Advanced Molecular Wafer Bonding Technology for 3D Integration on Silicon. 518–518. 1 indexed citations
19.
Cioccio, L. Di, B. Biasse, M. Kostrzewa, et al.. (2006). Recent Results on Advanced Molecular Wafer Bonding Technology for 3D Integration on Silicon. ECS Meeting Abstracts. MA2005-01(11). 518–518. 4 indexed citations
20.
Moriceau, H., C. R. Gorla, Anne‐Marie Charvet, et al.. (2005). Transfer of patterned Si and SiO/sub 2/ layers for the fabrication of patterned and mixed SOI. 183. 203–204.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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