Michael Deal

3.0k total citations
82 papers, 1.8k citations indexed

About

Michael Deal is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Computational Mechanics. According to data from OpenAlex, Michael Deal has authored 82 papers receiving a total of 1.8k indexed citations (citations by other indexed papers that have themselves been cited), including 63 papers in Electrical and Electronic Engineering, 42 papers in Atomic and Molecular Physics, and Optics and 15 papers in Computational Mechanics. Recurrent topics in Michael Deal's work include Semiconductor materials and interfaces (41 papers), Semiconductor materials and devices (36 papers) and Silicon and Solar Cell Technologies (29 papers). Michael Deal is often cited by papers focused on Semiconductor materials and interfaces (41 papers), Semiconductor materials and devices (36 papers) and Silicon and Solar Cell Technologies (29 papers). Michael Deal collaborates with scholars based in United States, Belgium and Germany. Michael Deal's co-authors include J.D. Plummer, Peter B. Griffin, Yaocheng Liu, H. G. Robinson, Yoshio Nishi, D. A. Stevenson, William D. Nix, Deok‐kee Kim, B Clemens and Hemanth Jagannathan and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of The Electrochemical Society.

In The Last Decade

Michael Deal

80 papers receiving 1.7k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Michael Deal United States 20 1.4k 641 437 433 203 82 1.8k
H. Moriceau France 23 1.3k 0.9× 431 0.7× 320 0.7× 423 1.0× 140 0.7× 120 1.7k
M. Nathan Israel 23 1.2k 0.9× 729 1.1× 447 1.0× 302 0.7× 480 2.4× 86 1.9k
T. Nakamura Japan 22 1.8k 1.3× 309 0.5× 295 0.7× 326 0.8× 388 1.9× 154 2.0k
Tanemasa Asano Japan 24 1.7k 1.2× 637 1.0× 750 1.7× 510 1.2× 218 1.1× 225 2.3k
Frank Fournel France 22 1.4k 1.0× 610 1.0× 366 0.8× 555 1.3× 140 0.7× 194 1.8k
P. Vettiger Switzerland 13 708 0.5× 605 0.9× 187 0.4× 644 1.5× 83 0.4× 31 1.4k
Jan‐Åke Schweitz Sweden 24 1.1k 0.8× 558 0.9× 374 0.9× 940 2.2× 169 0.8× 72 1.9k
S. M. Oak India 25 763 0.5× 584 0.9× 702 1.6× 477 1.1× 321 1.6× 133 1.8k
L. Di Cioccio France 32 2.8k 2.0× 1.1k 1.7× 394 0.9× 442 1.0× 316 1.6× 165 3.1k
Shichang Zou China 23 1.6k 1.1× 530 0.8× 349 0.8× 209 0.5× 146 0.7× 174 1.9k

Countries citing papers authored by Michael Deal

Since Specialization
Citations

This map shows the geographic impact of Michael Deal's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Michael Deal with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Michael Deal more than expected).

Fields of papers citing papers by Michael Deal

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Michael Deal. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Michael Deal. The network helps show where Michael Deal may publish in the future.

Co-authorship network of co-authors of Michael Deal

This figure shows the co-authorship network connecting the top 25 collaborators of Michael Deal. A scholar is included among the top collaborators of Michael Deal based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Michael Deal. Michael Deal is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
2.
Deal, Michael, Paul M. Walker, Mathilde Funes de la Vega, et al.. (2021). Three-dimensional nuclear magnetic resonance spectroscopy: a complementary tool to multiparametric magnetic resonance imaging in the identification of aggressive prostate cancer at 3.0T. Quantitative Imaging in Medicine and Surgery. 11(8). 3749–3766. 6 indexed citations
3.
Ouyang, Jia‐Hu, et al.. (2013). Effect of Composition on Structural and Electrical Properties of Amorphous Ta-W-Si-C Metal Thin Films. ECS Solid State Letters. 2(10). P86–P88. 4 indexed citations
4.
5.
Deal, Michael, et al.. (2007). Process Integration and Electrical Properties of Bilayer Metal Gate/High-k MOSFETs. 26. 59–60. 1 indexed citations
6.
Jagannathan, Hemanth, et al.. (2006). Halide Passivation of Germanium Nanowires. ECS Transactions. 3(7). 1175–1180. 13 indexed citations
7.
Jagannathan, Hemanth, Michael Deal, Yoshio Nishi, et al.. (2006). Templated germanium nanowire synthesis using oriented mesoporous organosilicate thin films. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena. 24(5). 2220–2224. 11 indexed citations
8.
Deal, Michael, Wilman Tsai, P. Majhi, et al.. (2005). Characteristics and mechanism of tunable work function gate electrodes using a bilayer metal structure on SiO/sub 2/ and HfO/sub 2/. IEEE Electron Device Letters. 26(7). 445–447. 58 indexed citations
9.
Deal, Michael, et al.. (2003). Modeling p-types dopants in gallium arsenide with SUPREM 3.5. 247–250.
10.
Plummer, J.D., Michael Deal, & Peter B. Griffin. (2000). Silicon VLSI Technology: Fundamentals, Practice and Modeling. Medical Entomology and Zoology. 1086. 41–52. 438 indexed citations
11.
Tringe, Joseph W., Michael Deal, & J.D. Plummer. (2000). Transparent Probe Test Structure for Electrical and Physical Characterization of Defects in Thin Films. Journal of The Electrochemical Society. 147(12). 4633–4633. 3 indexed citations
12.
Robinson, H. G., Michael Deal, G.A.J. Amaratunga, et al.. (1992). Modeling uphill diffusion of Mg implants in GaAs using suprem-i v. Journal of Applied Physics. 71(6). 2615–2623. 30 indexed citations
13.
Allen, Emily, et al.. (1991). The Superlattice Diffusion Probe: A Tool for Modeling Diffusion in III-V Semiconductors. MRS Proceedings. 240. 1 indexed citations
14.
Stevenson, D. A., et al.. (1990). Diffusion kinetics of Si in GaAs and related defect chemistry. Journal of Applied Physics. 68(8). 4008–4013. 13 indexed citations
15.
Allen, Emily, Michael Deal, & J.D. Plummer. (1990). The effect of background doping and dose on diffusion of ion-implanted tin in gallium arsenide. Journal of Applied Physics. 67(7). 3311–3314. 2 indexed citations
16.
Deal, Michael & H. G. Robinson. (1989). Diffusion of implanted beryllium in gallium arsenide as a function of anneal temperature and dose. Applied Physics Letters. 55(10). 996–998. 16 indexed citations
17.
Anholt, R., et al.. (1988). Ion implantation into gallium arsenide. Journal of Applied Physics. 64(7). 3429–3438. 46 indexed citations
18.
Anholt, R., T. W. Sigmon, & Michael Deal. (1987). Process and Devices Models for GaAs Mesfet Technology. 53–56. 1 indexed citations
19.
Deal, Michael, Stephen Hansen, R. Anholt, et al.. (1987). SUPREM 3.5, process modeling of gallium arsenide. 256–259. 5 indexed citations
20.
Pramanik, Dipankar, et al.. (1985). Rapid Thermal Annealing Of Ion Implanted Ti Films On Si. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 530. 159–159. 2 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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