N. Cave

1.1k total citations
34 papers, 737 citations indexed

About

N. Cave is a scholar working on Electrical and Electronic Engineering, Materials Chemistry and Atomic and Molecular Physics, and Optics. According to data from OpenAlex, N. Cave has authored 34 papers receiving a total of 737 indexed citations (citations by other indexed papers that have themselves been cited), including 26 papers in Electrical and Electronic Engineering, 13 papers in Materials Chemistry and 8 papers in Atomic and Molecular Physics, and Optics. Recurrent topics in N. Cave's work include Semiconductor materials and devices (13 papers), Advancements in Semiconductor Devices and Circuit Design (7 papers) and Silicon and Solar Cell Technologies (6 papers). N. Cave is often cited by papers focused on Semiconductor materials and devices (13 papers), Advancements in Semiconductor Devices and Circuit Design (7 papers) and Silicon and Solar Cell Technologies (6 papers). N. Cave collaborates with scholars based in United States, Taiwan and United Kingdom. N. Cave's co-authors include Michael Todd, B. J. Wilkens, John Kouvetakis, J. Menéndez, A. J. Kinloch, F. J. Boerio, R. B. Gregory, Clarence J. Tracy, Peter Fejes and Shinn‐Gwo Hong and has published in prestigious journals such as Physical review. B, Condensed matter, Applied Physics Letters and Journal of Applied Physics.

In The Last Decade

N. Cave

33 papers receiving 702 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
N. Cave United States 15 431 429 142 119 107 34 737
L. Ion Romania 19 561 1.3× 678 1.6× 178 1.3× 71 0.6× 114 1.1× 81 931
Konrad Jarausch United States 11 526 1.2× 395 0.9× 137 1.0× 72 0.6× 132 1.2× 24 871
P. Y. Timbrell Australia 12 446 1.0× 616 1.4× 93 0.7× 77 0.6× 120 1.1× 22 782
G. Jonathan Kluth United States 9 548 1.3× 256 0.6× 180 1.3× 95 0.8× 292 2.7× 12 684
Mustapha Diani Morocco 18 500 1.2× 506 1.2× 46 0.3× 73 0.6× 139 1.3× 74 800
C. Chaneliere France 9 769 1.8× 460 1.1× 49 0.3× 83 0.7× 111 1.0× 12 908
S. Fernández Spain 18 578 1.3× 660 1.5× 151 1.1× 85 0.7× 122 1.1× 85 969
A. Gagnaire France 14 621 1.4× 420 1.0× 244 1.7× 43 0.4× 139 1.3× 33 858
F. Gaspari Canada 14 328 0.8× 471 1.1× 49 0.3× 135 1.1× 51 0.5× 55 694
T. P. Smirnova Russia 15 477 1.1× 460 1.1× 43 0.3× 100 0.8× 69 0.6× 54 672

Countries citing papers authored by N. Cave

Since Specialization
Citations

This map shows the geographic impact of N. Cave's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by N. Cave with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites N. Cave more than expected).

Fields of papers citing papers by N. Cave

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by N. Cave. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by N. Cave. The network helps show where N. Cave may publish in the future.

Co-authorship network of co-authors of N. Cave

This figure shows the co-authorship network connecting the top 25 collaborators of N. Cave. A scholar is included among the top collaborators of N. Cave based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with N. Cave. N. Cave is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Yuan, Jun, V. Chan, N. Rovedo, et al.. (2009). Blanket SMT With In Situ N2 Plasma Treatment on the $\langle \hbox{100} \rangle$ Wafer for the Low-Cost Low-Power Technology Application. IEEE Electron Device Letters. 30(9). 916–918. 1 indexed citations
2.
Grudowski, Piotr, Mehul D. Shroff, V. Kolagunta, et al.. (2006). 1-D and 2-D Geometry Effects in Uniaxially-Strained Dual Etch Stop Layer Stressor Integrations. 62–63. 23 indexed citations
3.
Grudowski, Piotr, Cheng‐Hsien Wu, V. Kolagunta, et al.. (2006). 65nm SOI CMOS Technology for High Performance Microprocessor Application. 1–2. 1 indexed citations
4.
Tseng, H.‐H., et al.. (2002). Ultra-thin decoupled plasma nitridation (DPN) oxynitride gate dielectric for 80-nm advanced technology. IEEE Electron Device Letters. 23(12). 704–706. 31 indexed citations
6.
Cave, N., et al.. (2001). Theoretical and experimental optimization of numerical aperture and partial coherence for complementary phase-shift processes. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 4346. 755–755. 3 indexed citations
7.
Thompson, Matthew A., et al.. (2001). Effects of complementary phase-shift imaging on gate CD control. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 4346. 464–464. 2 indexed citations
8.
Cave, N., et al.. (1999). Practicing extension of 248-nm DUV optical lithography using trim-mask PSM. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3679. 10–10. 8 indexed citations
9.
Matsuda, Akitaka, et al.. (1998). A study of barium strontium titanate thin films for use in bypass capacitors. Journal of materials research/Pratt's guide to venture capital sources. 13(1). 197–204. 30 indexed citations
10.
Tracy, Clarence J., R. B. Gregory, Peter Fejes, et al.. (1997). A study of sputtered barium strontium titanate and strontium titanate thin films. Integrated ferroelectrics. 17(1-4). 165–178. 3 indexed citations
11.
Meléndez‐Lira, M., et al.. (1997). Microscopic carbon distribution in Si1yCyalloys: A Raman scattering study. Physical review. B, Condensed matter. 56(7). 3648–3650. 16 indexed citations
12.
Cave, N., et al.. (1995). Measuring the tensor nature of stress in silicon using polarized off-axis Raman spectroscopy. Applied Physics Letters. 66(26). 3639–3641. 26 indexed citations
13.
Walther, M., R. Tsui, H. Goronkin, et al.. (1994). Growth of GaSb / AlSb heterostructures on patterned substrates by molecular beam epitaxy. Journal of Crystal Growth. 143(1-2). 1–6. 4 indexed citations
14.
Kouvetakis, John, et al.. (1994). Novel Synthetic Routes to Carbon-Nitrogen Thin Films. Chemistry of Materials. 6(6). 811–814. 202 indexed citations
15.
Watanabe, J., et al.. (1993). The Application of Solid Phase Epitaxy for the Incorporation of Substitutional Carbon in Silicon. MRS Proceedings. 321. 3 indexed citations
17.
Hong, Shinn‐Gwo, N. Cave, & F. J. Boerio. (1992). The Modification of Epoxy/Metal Interphases by Adsorbed Contaminants. The Journal of Adhesion. 36(4). 265–279. 31 indexed citations
18.
Cave, N. & A. J. Kinloch. (1992). Self-assembling monolayer silane films as adhesion promoters. Polymer. 33(6). 1162–1170. 29 indexed citations
19.
Cave, N., et al.. (1991). Interfacial interactions of octadecyltrichlorosilane adsorbed onto aluminium substrates. Surface and Interface Analysis. 17(2). 120–121. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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