R. Mo

877 total citations
16 papers, 121 citations indexed

About

R. Mo is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Control and Systems Engineering. According to data from OpenAlex, R. Mo has authored 16 papers receiving a total of 121 indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Electrical and Electronic Engineering, 3 papers in Atomic and Molecular Physics, and Optics and 1 paper in Control and Systems Engineering. Recurrent topics in R. Mo's work include Semiconductor materials and devices (11 papers), Advancements in Semiconductor Devices and Circuit Design (9 papers) and Thin-Film Transistor Technologies (4 papers). R. Mo is often cited by papers focused on Semiconductor materials and devices (11 papers), Advancements in Semiconductor Devices and Circuit Design (9 papers) and Thin-Film Transistor Technologies (4 papers). R. Mo collaborates with scholars based in United States, China and Australia. R. Mo's co-authors include E. Leobandung, Siyuranga O. Koswatta, Sebastian Engelmann, P. M. Solomon, Wilfried Haensch, Seyoung Kim, Xiaoyu Sun, J. Bruley, Takashi Ando and Vijay Narayanan and has published in prestigious journals such as Journal of Colloid and Interface Science, Physica B Condensed Matter and Journal of Materials Research and Technology.

In The Last Decade

R. Mo

15 papers receiving 118 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
R. Mo United States 8 113 20 17 17 10 16 121
N. Breil United States 6 125 1.1× 28 1.4× 22 1.3× 9 0.5× 4 0.4× 13 132
O. Golonzka United States 6 178 1.6× 9 0.5× 19 1.1× 16 0.9× 7 0.7× 6 183
Aniket Gupta India 11 296 2.6× 14 0.7× 31 1.8× 69 4.1× 12 1.2× 26 310
Chun-Chen Yeh United States 5 109 1.0× 10 0.5× 27 1.6× 6 0.4× 10 1.0× 16 119
Marko Simicic Belgium 9 382 3.4× 17 0.8× 16 0.9× 62 3.6× 8 0.8× 36 403
John Ellis-Monaghan United States 9 230 2.0× 34 1.7× 30 1.8× 11 0.6× 5 0.5× 19 234
E. Josse France 11 298 2.6× 29 1.4× 37 2.2× 18 1.1× 6 0.6× 37 305
Stanisław Stopiński Poland 6 101 0.9× 39 1.9× 13 0.8× 14 0.8× 8 0.8× 26 116
Hantao Sun China 5 44 0.4× 30 1.5× 10 0.6× 19 1.1× 10 1.0× 8 63
Ru Huang China 10 357 3.2× 16 0.8× 81 4.8× 32 1.9× 6 0.6× 62 380

Countries citing papers authored by R. Mo

Since Specialization
Citations

This map shows the geographic impact of R. Mo's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by R. Mo with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites R. Mo more than expected).

Fields of papers citing papers by R. Mo

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by R. Mo. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by R. Mo. The network helps show where R. Mo may publish in the future.

Co-authorship network of co-authors of R. Mo

This figure shows the co-authorship network connecting the top 25 collaborators of R. Mo. A scholar is included among the top collaborators of R. Mo based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with R. Mo. R. Mo is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

16 of 16 papers shown
1.
Mo, R., et al.. (2025). Study of mechanical properties and wear-resistance of TiCp and HEAp co-reinforced 5083 aluminum matrix composites. Journal of Materials Research and Technology. 41. 1065–1075.
2.
Wang, Yunpeng, Hui Yu, R. Mo, et al.. (2025). Self-supported lignin-derived carbon coupling with Mo-doped NiO and NiCo alloy heterojunction stimulates lattice tensile strain and electron transfer for boosting ampere-level urea electrolysis. Journal of Colloid and Interface Science. 699(Pt 2). 138211–138211. 3 indexed citations
3.
Mo, R., Yong Yang, Kai Ni, et al.. (2025). A Computationally Efficient Current-Sensorless Three-Vector Modulated Model Predictive Control With Neutral-Point Voltage Balancing for T-Type Inverters With LC Filters. IEEE Transactions on Transportation Electrification. 11(5). 11187–11198. 1 indexed citations
4.
Mo, R., Yong Yang, Weimin Wu, et al.. (2023). Low-Complexity Virtual-Vector-Based FCS-MPC With Unaffected Neutral-Point Voltage for Three-Phase T-Type Inverters. IEEE Journal of Emerging and Selected Topics in Power Electronics. 12(2). 1683–1693. 7 indexed citations
5.
Kim, Seyoung, Xiaoyu Sun, P. M. Solomon, et al.. (2018). Capacitor-based Cross-point Array for Analog Neural Network with Record Symmetry and Linearity. 25–26. 33 indexed citations
6.
Cartier, E., A. Majumdar, Takashi Ando, et al.. (2017). Electron mobility in thin In0.53Ga0.47As channel.. European Solid-State Device Research Conference. 292–295. 2 indexed citations
7.
Cartier, E., A. Majumdar, Takashi Ando, et al.. (2017). Electron mobility in thin In<inf>0.53</inf>Ga<inf>0.47</inf>As channel. 479. 292–295. 2 indexed citations
8.
9.
Yau, Jeng-Bang, J. Cai, T.H. Ning, et al.. (2016). Ge-on-insulator lateral bipolar transistors. 8. 130–133. 1 indexed citations
10.
11.
12.
Yau, Jeng-Bang, J. Cai, C. D’Emic, et al.. (2015). SiGe-on-insulator symmetric lateral bipolar transistors. 1–2. 9 indexed citations
13.
Li, Shumin, Qi Zhu, Nan Zhou, et al.. (2010). The quantum effects on the transmission properties of periodic rod array. 2010 IEEE MTT-S International Microwave Symposium. 1–1. 1 indexed citations
14.
Ren, Zhibin, M. Ieong, Jian Cai, et al.. (2006). Selective epitaxial channel ground plane thin SOI CMOS devices. 42. 733–736. 5 indexed citations
15.
Frank, Martin M., Huiling Shang, Sandrine Rivillon, et al.. (2005). High-k Gate Dielectrics on Silicon and Germanium: Impact of Surface Preparation. Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena. 103-104. 3–6. 7 indexed citations
16.
Mo, R., et al.. (1999). Defect states at silicon surfaces. Physica B Condensed Matter. 273-274. 468–472. 11 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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