Geoffrey Yeap

846 total citations
48 papers, 508 citations indexed

About

Geoffrey Yeap is a scholar working on Electrical and Electronic Engineering, Hardware and Architecture and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Geoffrey Yeap has authored 48 papers receiving a total of 508 indexed citations (citations by other indexed papers that have themselves been cited), including 48 papers in Electrical and Electronic Engineering, 6 papers in Hardware and Architecture and 4 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Geoffrey Yeap's work include Advancements in Semiconductor Devices and Circuit Design (37 papers), Semiconductor materials and devices (33 papers) and Low-power high-performance VLSI design (17 papers). Geoffrey Yeap is often cited by papers focused on Advancements in Semiconductor Devices and Circuit Design (37 papers), Semiconductor materials and devices (33 papers) and Low-power high-performance VLSI design (17 papers). Geoffrey Yeap collaborates with scholars based in United States, United Kingdom and South Korea. Geoffrey Yeap's co-authors include Ming-Ren Lin, S. Krishnan, Seong‐Ook Jung, Joseph Wang, Hanwool Jeong, S. C. Song, Juhyun Park, Hidehiro Fujiwara, Po‐Sheng Wang and Lixin Ge and has published in prestigious journals such as IEEE Journal of Solid-State Circuits, IEEE Transactions on Microwave Theory and Techniques and IEEE Transactions on Electron Devices.

In The Last Decade

Geoffrey Yeap

46 papers receiving 479 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Geoffrey Yeap United States 13 489 68 35 30 24 48 508
Rajiv Dunne United States 9 563 1.2× 84 1.2× 33 0.9× 48 1.6× 21 0.9× 11 575
D. Deschacht France 8 257 0.5× 68 1.0× 35 1.0× 40 1.3× 43 1.8× 44 287
Yidnekachew S. Mekonnen United States 6 303 0.6× 62 0.9× 18 0.5× 30 1.0× 16 0.7× 15 337
J.-H. Chern United States 8 374 0.8× 102 1.5× 22 0.6× 22 0.7× 24 1.0× 24 414
W.W.-M. Dai United States 11 377 0.8× 133 2.0× 15 0.4× 16 0.5× 47 2.0× 46 405
Kwangok Jeong United States 13 347 0.7× 141 2.1× 18 0.5× 47 1.6× 13 0.5× 36 385
H. Oda Japan 12 466 1.0× 30 0.4× 9 0.3× 51 1.7× 24 1.0× 70 489
P.K. Chatterjee United States 12 381 0.8× 37 0.5× 16 0.5× 45 1.5× 43 1.8× 29 420
J.D. Warnock United States 11 373 0.8× 86 1.3× 7 0.2× 37 1.2× 32 1.3× 32 409
Takashi Ishigaki Japan 13 505 1.0× 46 0.7× 38 1.1× 19 0.6× 98 4.1× 32 560

Countries citing papers authored by Geoffrey Yeap

Since Specialization
Citations

This map shows the geographic impact of Geoffrey Yeap's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Geoffrey Yeap with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Geoffrey Yeap more than expected).

Fields of papers citing papers by Geoffrey Yeap

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Geoffrey Yeap. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Geoffrey Yeap. The network helps show where Geoffrey Yeap may publish in the future.

Co-authorship network of co-authors of Geoffrey Yeap

This figure shows the co-authorship network connecting the top 25 collaborators of Geoffrey Yeap. A scholar is included among the top collaborators of Geoffrey Yeap based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Geoffrey Yeap. Geoffrey Yeap is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Chang, Tsung-Yung Jonathan, Yen-Huei Chen, Po‐Sheng Wang, et al.. (2025). A 38.1Mb/mm2 SRAM in a 2nm-CMOS-Nanosheet Technology for High-Density and Energy-Efficient Compute. 492–494.
2.
Kim, Young Suk, et al.. (2023). A 4.24-GHz 128×256 SRAM Operating Double Pump Read Write Same Cycle in 5-nm Technology. IEEE Solid-State Circuits Letters. 7. 6–9. 1 indexed citations
3.
4.
Jha, Amit, et al.. (2020). Approaches to Area Efficient High-Performance Voltage-Controlled Oscillators in Nanoscale CMOS. IEEE Transactions on Microwave Theory and Techniques. 69(1). 147–156. 12 indexed citations
5.
6.
Chang, Tsung-Yung Jonathan, Yen-Huei Chen, Po‐Sheng Wang, et al.. (2020). A 5-nm 135-Mb SRAM in EUV and High-Mobility Channel FinFET Technology With Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-V MIN Applications. IEEE Journal of Solid-State Circuits. 56(1). 179–187. 22 indexed citations
7.
Song, S. C., Jun Xu, Niladri Narayan Mojumder, et al.. (2015). Holistic technology optimization and key enablers for 7nm mobile SoC. T198–T199. 23 indexed citations
8.
Chen, Philip, Ruben Lieten, William J. Hunks, et al.. (2015). Selective co growth on Cu for void-free via fill. 265–268. 9 indexed citations
9.
Jeong, Hanwool, et al.. (2015). Variation-Aware Figure of Merit for Integrated Circuit in Near-Threshold Region. IEEE Transactions on Electron Devices. 62(6). 1754–1759. 4 indexed citations
10.
Yeap, Geoffrey. (2014). Technology-design-manufacturing co-optimization for advanced mobile SoCs. 1–8. 4 indexed citations
11.
Sun, Yangyang, et al.. (2014). Challenges and opportunities of chip package interaction with fine pitch Cu pillar for 28nm. 47–49. 17 indexed citations
12.
13.
Jeong, Hanwool, et al.. (2012). Read-Preferred SRAM Cell With Write-Assist Circuit Using Back-Gate ETSOI Transistors in 22-nm Technology. IEEE Transactions on Electron Devices. 59(10). 2575–2581. 7 indexed citations
14.
Yang, Ming‐Ta, et al.. (2011). RF and mixed-signal performances of a low cost 28nm low-power CMOS technology for wireless system-on-chip applications. Symposium on VLSI Technology. 40–41. 12 indexed citations
15.
Wang, Joseph, Ping Liu, Ying Chen, et al.. (2011). Non-Gaussian distribution of SRAM read current and design impact to low power memory using Voltage Acceleration Method. Symposium on VLSI Technology. 220–221. 7 indexed citations
16.
Kim, Ji Su, et al.. (2011). SRAM bitcell design for low voltage operation in deep submicron technologies. 1–4. 3 indexed citations
17.
Du, Yang, et al.. (2010). BSIM4-based lateral diode model for RF ESD applications. 1–5. 2 indexed citations
18.
Kang, Mingu, S. C. Song, Seonghoon Woo, et al.. (2010). FinFET SRAM Optimization With Fin Thickness and Surface Orientation. IEEE Transactions on Electron Devices. 57(11). 2785–2793. 29 indexed citations
19.
Yeap, Geoffrey, et al.. (2002). Sub-100 nm nMOSFETs with direct tunneling thermal, nitrous and nitric oxides. 10–11. 4 indexed citations
20.
Krishnan, Srinath, Geoffrey Yeap, Bin Yu, Qian Xiang, & Ming-Ren Lin. (1998). High-k scaling for gate insulators: an insightful study. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE. 3506. 65–65. 4 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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