Geoffrey Yeap

846 citations

48 papers · 508 indexed · h-index 13

Impact in

Hardware and Architecture top 10%
- VLSI and Analog Circuit Testing
Electrical and Electronic Engineering top 10%
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Low-power high-performance VLSI design
- Ferroelectric and Negative Capacitance Devices
- Integrated Circuits and Semiconductor Failure Analysis
- VLSI and FPGA Design Techniques
- Advanced Memory and Neural Computing

Papers in ⓘ

Hardware and Architecture 6
- VLSI and Analog Circuit Testing 5
Electrical and Electronic Engineering 48
- Advancements in Semiconductor Devices and Circuit Design 37
- Semiconductor materials and devices 33
- Low-power high-performance VLSI design 17
- Integrated Circuits and Semiconductor Failure Analysis 10
- Radio Frequency Integrated Circuit Design 5
- VLSI and FPGA Design Techniques 5

Co-authors: Ming-Ren Lin (3 shared papers)S. Krishnan (2 shared papers)Seong‐Ook Jung (10 shared papers)Joseph Wang (11 shared papers)Hanwool Jeong (4 shared papers)S. C. Song (6 shared papers)Juhyun Park (3 shared papers)Po‐Sheng Wang (3 shared papers)
Journals: IEEE Transactions on Electron Devices (5 papers)IEEE Transactions on Circuits and Systems I Regular Papers (2 papers)IEEE Transactions on Very Large Scale Integration (VLSI) Systems (1 paper)IEEE Journal of Solid-State Circuits (1 paper)IEEE Transactions on Microwave Theory and Techniques (1 paper)
Partner nations: United States United Kingdom South Korea

In The Last Decade

Geoffrey Yeap

46 papers receiving 479 citations

Peers

Countries citing papers authored by Geoffrey Yeap

Since Specialization

Citations

This map shows the geographic impact of Geoffrey Yeap's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Geoffrey Yeap with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Geoffrey Yeap more than expected).

Fields of papers citing papers by Geoffrey Yeap

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Geoffrey Yeap. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Geoffrey Yeap. The network helps show where Geoffrey Yeap may publish in the future.

Co-authors

The 25 scholars most cited alongside Geoffrey Yeap, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Geoffrey Yeap Line = papers co-authored together Geoffrey Yeap links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 48 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Fringing-induced barrier lowering (FIBL) in sub-100 nm MOSFETs with high- K gate dielectrics Electronics Letters ·Geoffrey Yeap, S. Krishnan, Ming-Ren Lin	1998	69
2	Smart mobile SoCs driving the semiconductor industry: Technology trend, challenges and opportunities Geoffrey Yeap	2013	43
3	Single-Ended 9T SRAM Cell for Near-Threshold Voltage Operation With Enhanced Read Performance in 22-nm FinFET Technology IEEE Transactions on Very Large Scale Integration (VLSI) Systems ·Younghwi Yang, Juhyun Park, Seung Chul Song, Joseph Wang, Geoffrey Yeap, Seong‐Ook Jung	2014	34
4	15.1 A 5nm 135Mb SRAM in EUV and High-Mobility-Channel FinFET Technology with Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-V_MIN Applications Jonathan Chang, Yen-Huei Chen, Gary Chan, Hank Cheng, Po‐Sheng Wang, Yangsyu Lin, Hidehiro Fujiwara, Robin Lee, Hung-Jen Liao, Ping-Wei Wang, Geoffrey Yeap, Quincy Li	2020	33
5	Single Bit-Line 7T SRAM Cell for Near-Threshold Voltage Operation With Enhanced Performance and Energy in 14 nm FinFET Technology IEEE Transactions on Circuits and Systems I Regular Papers ·Younghwi Yang, Hanwool Jeong, Seung Chul Song, Joseph Wang, Geoffrey Yeap, Seong‐Ook Jung	2016	32
6	FinFET SRAM Optimization With Fin Thickness and Surface Orientation IEEE Transactions on Electron Devices ·Mingu Kang, S. C. Song, Seonghoon Woo, H. K. Park, Mohamed H. Abu-Rahma, Lixin Ge, B. M. Han, Jiannong Wang, Geoffrey Yeap, Seong‐Ook Jung	2010	29
7	Holistic technology optimization and key enablers for 7nm mobile SoC S. C. Song, Jun Xu, Niladri Narayan Mojumder, K. Rim, Dominic Yang, Jerry Bao, Jian Zhu, J. Wang, Mustafa Badaroglu, Vladimir Machkaoutsan, P. Narayanasetti, B. Bucki, J. Fischer, Geoffrey Yeap	2015	23
8	A 5-nm 135-Mb SRAM in EUV and High-Mobility Channel FinFET Technology With Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-V _MIN Applications IEEE Journal of Solid-State Circuits ·Tsung-Yung Jonathan Chang, Yen-Huei Chen, Wei-Min Chan, Hank Cheng, Po‐Sheng Wang, Yangsyu Lin, Hidehiro Fujiwara, Robin Lee, Hung-Jen Liao, Ping-Wei Wang, Geoffrey Yeap, Quincy Li	2020	22
9	Holistic technology optimization and key enablers for 7nm mobile SoC S. C. Song, Junyi Xu, N. N. Mojumder, K. Rim, Darun Yang, J. Bao, J. Zhu, J. Wang, M. Badaroglu, V. Machkaoutsan, P. Narayanasetti, B. Bucki, Jannis Fischer, Geoffrey Yeap	2015	20
10	A Reliability Enhanced 5nm CMOS Technology Featuring 5^th Generation FinFET with Fully-Developed EUV and High Mobility Channel for Mobile SoC and High Performance Computing Application Juan LIU, Subhadeep Mukhopadhyay, Amit Kundu, S.H. Chen, H.C. Wang, Dongsheng Huang, J.H. Lee, Meiyuan Wang, Ryan Lu, Shiwei Lin, Y.M. Chen, Huiling Shang, P.W. Wang, Hsin-Ying Lin, Geoffrey Yeap, Jun He	2020	19
11	Challenges and opportunities of chip package interaction with fine pitch Cu pillar for 28nm Andy Bao, Lily Zhao, Yangyang Sun, Michael Han, Geoffrey Yeap, Steve Bezuk, Pat Holmes, Cecille Alcira, Xuefeng Zhang, Kenneth Lee	2014	17
12	Approaches to Area Efficient High-Performance Voltage-Controlled Oscillators in Nanoscale CMOS IEEE Transactions on Microwave Theory and Techniques ·Amit Jha, Pavan Yelleswarapu, Ken Liao, Geoffrey Yeap, Kenneth K. O	2020	12
13	RF and mixed-signal performances of a low cost 28nm low-power CMOS technology for wireless system-on-chip applications Symposium on VLSI Technology ·Ming‐Ta Yang, Ken Liao, Robert Welstand, Charles Teng, Wing Sy, Ying Chen, R. Dutta, P.R. Chidambaram, Michael Han, Yang Du, Geoffrey Yeap	2011	12
14	Leakage current in low standby power and high performance devices Geoffrey Yeap	2002	10
15	Asymmetric Independent-Gate MOSFET SRAM for High Stability IEEE Transactions on Electron Devices ·Mingu Kang, Hyunkook Park, J. Wang, Geoffrey Yeap, Seong‐Ook Jung	2011	10
16	Selective co growth on Cu for void-free via fill Jun‐Fei Zheng, Philip Chen, Tomas H. Baum, Ruben Lieten, William J. Hunks, Steven Lippy, Asa Frye, Weimin Li, James O’Neill, Jeff Xu, John Zhu, Jerry Bao, Vladimir Machkaoutsan, Mustafa Badaroglu, Geoffrey Yeap, Gayle Murdoch, J. Bömmels, Zsolt Tökei	2015	9
17	Unified Technology Optimization Platform using Integrated Analysis (UTOPIA) for holistic technology, design and system co-optimization at <= 7nm nodes S. C. Song, Jeff Xu, Dominic Yang, K. Rim, Peijie Feng, Jerry Bao, Jianhuan Zhu, J. Wang, Giri Nallapati, Mustafa Badaroglu, P. Narayanasetti, B. Bucki, J. Fischer, Geoffrey Yeap	2016	8
18	Non-Gaussian distribution of SRAM read current and design impact to low power memory using Voltage Acceleration Method Symposium on VLSI Technology ·Joseph Wang, Ping Liu, Yandong Gao, P. V. Mane- Deshmukh, Sam Yang, Ying Chen, Wing Sy, Lixin Ge, E. Terzioglu, Mohamed H. Abu-Rahma, Manish Garg, Sei Seung Yoon, Michael Han, M. Sani, Geoffrey Yeap	2011	7
19	Read-Preferred SRAM Cell With Write-Assist Circuit Using Back-Gate ETSOI Transistors in 22-nm Technology IEEE Transactions on Electron Devices ·Younghwi Yang, Hanwool Jeong, Frank Yang, Joseph Wang, Geoffrey Yeap, Seong‐Ook Jung	2012	7
20	High performance mobile SoC design and technology co-optimization to mitigate high-K metal gate process induced variations Sam Yang, Lixin Ge, Jeff Lin, Michael Han, Da Yang, Joseph Wang, Kasim Mahmood, Y. Tony Song, Dana Yuan, Dong-Won Seo, M. Pedrali-Noy, Dinesh Alladi, Sameer Wadhwa, Xiaoliang Bai, Liang Dai, Sei Seung Yoon, E. Terzioglu, S. Bazarjani, Geoffrey Yeap	2014	6

About Geoffrey Yeap

Geoffrey Yeap is a scholar working on Hardware and Architecture, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Industrial and Manufacturing Engineering and Automotive Engineering, having authored 48 papers that have together received 508 indexed citations. Recurring topics across this work include Advancements in Semiconductor Devices and Circuit Design (37 papers), Semiconductor materials and devices (33 papers), Low-power high-performance VLSI design (17 papers), Integrated Circuits and Semiconductor Failure Analysis (10 papers), Radio Frequency Integrated Circuit Design (5 papers), VLSI and FPGA Design Techniques (5 papers), VLSI and Analog Circuit Testing (5 papers) and Copper Interconnects and Reliability (4 papers). The work is most often cited by research in Hardware and Architecture (68 citations), Electrical and Electronic Engineering (489 citations), Electronic, Optical and Magnetic Materials (35 citations), Computational Theory and Mathematics (13 citations) and Atomic and Molecular Physics, and Optics (24 citations). Geoffrey Yeap has collaborated with scholars based in United States, United Kingdom and South Korea. Frequent co-authors include Ming-Ren Lin, S. Krishnan, Seong‐Ook Jung, Joseph Wang, Hanwool Jeong, S. C. Song, Juhyun Park, Po‐Sheng Wang, Lixin Ge and Mingu Kang. Their work appears in journals such as IEEE Transactions on Electron Devices, IEEE Transactions on Circuits and Systems I Regular Papers, IEEE Transactions on Very Large Scale Integration (VLSI) Systems, IEEE Journal of Solid-State Circuits and IEEE Transactions on Microwave Theory and Techniques.

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