Aneesh Nainani

1.4k total citations
56 papers, 1.2k citations indexed

About

Aneesh Nainani is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Biomedical Engineering. According to data from OpenAlex, Aneesh Nainani has authored 56 papers receiving a total of 1.2k indexed citations (citations by other indexed papers that have themselves been cited), including 54 papers in Electrical and Electronic Engineering, 25 papers in Atomic and Molecular Physics, and Optics and 15 papers in Biomedical Engineering. Recurrent topics in Aneesh Nainani's work include Semiconductor materials and devices (50 papers), Advancements in Semiconductor Devices and Circuit Design (39 papers) and Semiconductor materials and interfaces (15 papers). Aneesh Nainani is often cited by papers focused on Semiconductor materials and devices (50 papers), Advancements in Semiconductor Devices and Circuit Design (39 papers) and Semiconductor materials and interfaces (15 papers). Aneesh Nainani collaborates with scholars based in United States, India and Japan. Aneesh Nainani's co-authors include Krishna C. Saraswat, Saurabh Lodha, J.B. Boos, B. R. Bennett, Yun Sun, Ze Yuan, Mathew C. Abraham, H.‐S. Philip Wong, Yoshio Nishi and Tejas Krishnamohan and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and IEEE Transactions on Electron Devices.

In The Last Decade

Aneesh Nainani

53 papers receiving 1.2k citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Aneesh Nainani United States 20 1.1k 532 288 271 24 56 1.2k
Tsutomu Tezuka Japan 19 1.4k 1.3× 322 0.6× 509 1.8× 330 1.2× 29 1.2× 79 1.5k
Arthur J. Pitera United States 22 1.4k 1.3× 764 1.4× 401 1.4× 241 0.9× 20 0.8× 46 1.5k
P. Ranade United States 17 1.3k 1.1× 220 0.4× 147 0.5× 148 0.5× 47 2.0× 36 1.3k
Raj Jammy United States 16 942 0.8× 212 0.4× 179 0.6× 169 0.6× 31 1.3× 89 977
Y. Y. Proskuryakov United Kingdom 12 541 0.5× 352 0.7× 220 0.8× 488 1.8× 18 0.8× 17 708
Wataru Mizubayashi Japan 19 1.4k 1.2× 235 0.4× 165 0.6× 287 1.1× 74 3.1× 140 1.4k
Weijie Du Japan 16 633 0.6× 621 1.2× 90 0.3× 294 1.1× 18 0.8× 38 739
Toshiyuki Tabata Japan 15 873 0.8× 243 0.5× 158 0.5× 346 1.3× 43 1.8× 64 935
Salim El Kazzi Belgium 16 477 0.4× 163 0.3× 146 0.5× 347 1.3× 34 1.4× 45 659
Keisuke Arimoto Japan 15 587 0.5× 437 0.8× 164 0.6× 148 0.5× 15 0.6× 97 686

Countries citing papers authored by Aneesh Nainani

Since Specialization
Citations

This map shows the geographic impact of Aneesh Nainani's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Aneesh Nainani with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Aneesh Nainani more than expected).

Fields of papers citing papers by Aneesh Nainani

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Aneesh Nainani. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Aneesh Nainani. The network helps show where Aneesh Nainani may publish in the future.

Co-authorship network of co-authors of Aneesh Nainani

This figure shows the co-authorship network connecting the top 25 collaborators of Aneesh Nainani. A scholar is included among the top collaborators of Aneesh Nainani based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Aneesh Nainani. Aneesh Nainani is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Misra, Abhishek, et al.. (2014). Enhanced Ge n+/p Junction Performance Using Cryogenic Phosphorus Implantation. IEEE Transactions on Electron Devices. 62(1). 69–74. 13 indexed citations
2.
Yuan, Ze, Chien‐Yu Chen, Aneesh Nainani, et al.. (2013). Optimal device architecture and hetero-integration scheme for III–V CMOS. Rare & Special e-Zone (The Hong Kong University of Science and Technology). 3 indexed citations
3.
Gupta, Shashank, et al.. (2013). Contact resistivity reduction through interfacial layer doping in metal-interfacial layer-semiconductor contacts. Journal of Applied Physics. 113(23). 88 indexed citations
4.
Pal, Ashish, Aneesh Nainani, & Krishna C. Saraswat. (2013). Addressing key challenges in 1T-DRAM: Retention time, scaling and variability — Using a novel design with GaP source-drain. 376–379. 3 indexed citations
5.
Nainani, Aneesh, et al.. (2013). Improved Nitridation of GeO2 Interfacial layer for Ge Gate Stack Technology. MRS Proceedings. 1561. 1 indexed citations
6.
Nainani, Aneesh, et al.. (2012). Fermi-level unpinning and low resistivity in contacts to n-type Ge with a thin ZnO interfacial layer. Applied Physics Letters. 101(18). 94 indexed citations
7.
Yuan, Ze, Aneesh Nainani, B. R. Bennett, et al.. (2012). Amelioration of interface state response using band engineering in III-V quantum well metal-oxide-semiconductor field-effect transistors. Applied Physics Letters. 100(14). 9 indexed citations
8.
Nainani, Aneesh, Shashank Gupta, Victor Moroz, et al.. (2012). Is strain engineering scalable in FinFET era?: Teaching the old dog some new tricks. 18.3.1–18.3.4. 28 indexed citations
9.
Nainani, Aneesh, B. R. Bennett, J.B. Boos, Mario G. Ancona, & Krishna C. Saraswat. (2012). Enhancing hole mobility in III-V semiconductors. Journal of Applied Physics. 111(10). 34 indexed citations
10.
Yuan, Ze, Aneesh Nainani, B. R. Bennett, et al.. (2012). InGaSb: Single channel solution for realizing III–V CMOS. 185–186. 14 indexed citations
11.
Gupta, Shashank, Neeraj Agarwal, Aneesh Nainani, et al.. (2012). ZnO: an attractive option for n-type metal-interfacial layer-semiconductor (Si, Ge, SiC) contacts. 91. 83–84. 24 indexed citations
12.
Yuan, Ze, Aneesh Nainani, Yun Sun, et al.. (2011). Schottky barrier height reduction for metal/n-GaSb contact by inserting TiO2 interfacial layer with low tunneling resistance. Applied Physics Letters. 98(17). 33 indexed citations
13.
Pal, Ashish, Aneesh Nainani, Shubhanshu Gupta, & Krishna C. Saraswat. (2011). Performance Improvement of One-Transistor DRAM by Band Engineering. IEEE Electron Device Letters. 33(1). 29–31. 11 indexed citations
14.
Kuzum, Duygu, Tejas Krishnamohan, Aneesh Nainani, et al.. (2010). High-Mobility Ge N-MOSFETs and Mobility Degradation Mechanisms. IEEE Transactions on Electron Devices. 58(1). 59–66. 85 indexed citations
15.
Thareja, Gaurav, Jiale Liang, Saurabh Chopra, et al.. (2010). High performance germanium n-MOSFET with antimony dopant activation beyond 1&#x00D7;10<sup>20</sup> cm<sup>&#x2212;3</sup>. 10.5.1–10.5.4. 28 indexed citations
16.
Nainani, Aneesh, et al.. (2009). Electrostatics and its effect on spatial distribution of tunnel current in metal Nanocrystal flash memories. DSpace (IIT Bombay).
17.
Kuzum, Duygu, Tejas Krishnamohan, Aneesh Nainani, et al.. (2009). Experimental demonstration of high mobility Ge NMOS. 25. 1–4. 47 indexed citations
18.
Nainani, Aneesh, Shyam Raghunathan, Masaharu Kobayashi, et al.. (2009). Engineering of strained III&#x2013;V heterostructures for high hole mobility. 10. 1–4. 16 indexed citations
19.
Bersuker, G., D. C. Gilmer, Andrea Padovani, et al.. (2009). A Novel Fluorine Incorporated Band Engineered (BE) Tunnel (SiO2/ HfSiO/ SiO2) TANOS with Excellent Program/Erase &#x00026; Endurance to 10^5 Cycles. IRIS UNIMORE (University of Modena and Reggio Emilia). 1–2. 7 indexed citations
20.
Nainani, Aneesh, Sabarni Palit, Udayan Ganguly, et al.. (2007). Development of A 3D Simulator for Metal Nanocrystal (NC) Flash Memories under NAND Operation. DSpace (IIT Bombay). 41. 947–950. 8 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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