Joachim Würfl

4.3k citations

195 papers · 3.5k · h-index 31

Impact in

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 2%
- Ga2O3 and related materials

Papers in

Electrical and Electronic Engineering 171
- Semiconductor materials and devices 88
- Silicon Carbide Semiconductor Technologies 62
- Radio Frequency Integrated Circuit Design 47
Condensed Matter Physics 134
- GaN-based semiconductor devices and materials 133

Co-authors: Oliver Hilt (68 shared papers)Eldad Bahat‐Treidel (48 shared papers)Frank Brunner (53 shared papers)G. Tränkle (43 shared papers)R. Lossy (27 shared papers)W. Heinrich (24 shared papers)A. Knauer (10 shared papers)Rimma Zhytnytska (11 shared papers)
Journals: Microelectronics Reliability (15 papers)Applied Physics Letters (14 papers)IEEE Transactions on Electron Devices (10 papers)IEEE Electron Device Letters (9 papers)physica status solidi (a) (7 papers)
Partner nations: Germany Austria Taiwan

In The Last Decade

Joachim Würfl

188 papers receiving 3.4k citations

Peers

Countries citing papers authored by Joachim Würfl

Since Specialization

Citations

This map shows the geographic impact of Joachim Würfl's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Joachim Würfl with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Joachim Würfl more than expected).

Fields of papers citing papers by Joachim Würfl

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Joachim Würfl. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Joachim Würfl. The network helps show where Joachim Würfl may publish in the future.

Co-authors

The 25 scholars most cited alongside Joachim Würfl, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Joachim Würfl Line = papers co-authored together Joachim Würfl links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 195 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	AlGaN/GaN/GaN:C Back-Barrier HFETs With Breakdown Voltage of Over 1 kV and Low $R_{\scriptscriptstyle{\rm ON}} \times A$ IEEE Transactions on Electron Devices ·Eldad Bahat‐Treidel, Frank Brunner, Oliver Hilt, Eunjung Cho, Joachim Würfl, G. Tränkle	2010	191
2	Fast-Switching GaN-Based Lateral Power Schottky Barrier Diodes With Low Onset Voltage and Strong Reverse Blocking IEEE Electron Device Letters ·Eldad Bahat‐Treidel, Oliver Hilt, Rimma Zhytnytska, Andreas Wentzel, Chafik Meliani, Joachim Würfl, G. Tränkle	2012	157
3	Gate Reliability Investigation in Normally-Off p-Type-GaN Cap/AlGaN/GaN HEMTs Under Forward Bias Stress IEEE Electron Device Letters ·M. Ťapajna, Oliver Hilt, Eldad Bahat‐Treidel, Joachim Würfl, J. Kuzmı́k	2016	138
4	Punchthrough-Voltage Enhancement of AlGaN/GaN HEMTs Using AlGaN Double-Heterojunction Confinement IEEE Transactions on Electron Devices ·Eldad Bahat‐Treidel, Oliver Hilt, Frank Brunner, Joachim Würfl, GÜnther Trankle	2008	129
5	Analysis of the Survivability of GaN Low-Noise Amplifiers IEEE Transactions on Microwave Theory and Techniques ·Matthias Rudolph, R. Behtash, Ralf Doerner, K. Hirche, Joachim Würfl, W. Heinrich, G. Tränkle	2007	128
6	Lateral 1.8 kV $\beta$ -Ga₂O₃ MOSFET With 155 MW/cm² Power Figure of Merit IEEE Electron Device Letters ·Kornelius Tetzner, Eldad Bahat‐Treidel, Oliver Hilt, Andreas Popp, Saud Bin Anooz, G. Wagner, Andreas Thies, Karina Ickert, Hassan Gargouri, Joachim Würfl	2019	120
7	AlGaN/GaN/AlGaN DH-HEMTs Breakdown Voltage Enhancement Using Multiple Grating Field Plates (MGFPs) IEEE Transactions on Electron Devices ·Eldad Bahat‐Treidel, Oliver Hilt, Frank Brunner, V. Sidorov, Joachim Würfl, G. Tränkle	2010	115
8	High gain ultraviolet photodetectors based on AlGaN/GaN heterostructures for optical switching Applied Physics Letters ·Martin Martens, Jessica Schlegel, Patrick Vogt, Frank Brunner, R. Lossy, Joachim Würfl, M. Weyers, Michael Kneissl	2011	105
9	Normally-off high-voltage p-GaN gate GaN HFET with carbon-doped buffer Oliver Hilt, Frank Brunner, E. Cho, A. Knauer, Eldad Bahat‐Treidel, Joachim Würfl	2011	100
10	Investigation of the Dynamic On-State Resistance of 600 V Normally-Off and Normally-On GaN HEMTs IEEE Transactions on Industry Applications ·Nasser Badawi, Oliver Hilt, Eldad Bahat‐Treidel, Jan Böcker, Joachim Würfl, Sibylle Dieckerhoff	2016	80
11	Reducing Thermal Resistance of AlGaN/GaN Electronic Devices Using Novel Nucleation Layers IEEE Electron Device Letters ·G.J. Riedel, James W. Pomeroy, K.P. Hilton, J.O. Maclean, D. J. Wallis, Michael J. Uren, T. Martin, Urban Forsberg, Anders Lundskog, A. Kakanakova‐Georgieva, Г. Позина, Erik Janzén, R. Lossy, R. Pazirandeh, Frank Brunner, Joachim Würfl, Martin Kuball	2009	66
12	Normally-off AlGaN/GaN HFET with p-type Ga Gate and AlGaN buffer Oliver Hilt, A. Knauer, Frank Brunner, Eldad Bahat‐Treidel, Joachim Würfl	2010	62
13	Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors Applied Physics Letters ·M. Ťapajna, Oliver Hilt, Eldad Bahat‐Treidel, Joachim Würfl, J. Kuzmı́k	2015	57
14	Techniques towards GaN power transistors with improved high voltage dynamic switching properties Joachim Würfl, Oliver Hilt, Eldad Bahat‐Treidel, Rimma Zhytnytska, Przemyslaw Kotara, Frank Brunner, Olaf Krueger, M. Weyers	2013	52
15	Normally-off AlGaN/GaN HFET with p-type GaN gate and AlGaN buffer Oliver Hilt, A. Knauer, Frank Brunner, Eldad Bahat‐Treidel, Joachim Würfl	2010	47
16	Self-Heating in GaN Transistors Designed for High-Power Operation IEEE Transactions on Electron Devices ·J. Kuzmı́k, M. Ťapajna, L. Válik, Marián Molnár, D. Donoval, Clément Fleury, D. Pogány, G. Strasser, Oliver Hilt, Frank Brunner, Joachim Würfl	2014	46
17	AlGaN/GaN HEMT With Integrated Recessed Schottky-Drain Protection Diode IEEE Electron Device Letters ·Eldad Bahat‐Treidel, R. Lossy, Joachim Würfl, G. Tränkle	2009	43
18	Impact of buffer composition on the dynamic on-state resistance of high-voltage AlGaN/GaN HFETs Zenodo (CERN European Organization for Nuclear Research) ·Oliver Hilt, Eldad Bahat‐Treidel, Eunjung Cho, Sebastian Singwald, Joachim Würfl	2012	43
19	Proton and Heavy Ion Irradiation Effects on AlGaN/GaN HFET Devices IEEE Transactions on Nuclear Science ·G. Sonia, U. Zeimer, L. Wang, M. Weyers, Joachim Würfl, G. Tränkle, Frank Brunner, A. Denker, R. Lossy, M. Mai, J. Opitz‐Coutureau, Gerhard Pensl, E. Richter, J. Schmidt	2006	41
20	Challenges to overcome breakdown limitations in lateral β-Ga2O3 MOSFET devices Microelectronics Reliability ·Kornelius Tetzner, Oliver Hilt, Andreas Popp, Saud Bin Anooz, Joachim Würfl	2020	39

About Joachim Würfl

Joachim Würfl is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials and Materials Chemistry, having authored 195 papers that have together received 3.5k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (133 papers), Semiconductor materials and devices (88 papers), Silicon Carbide Semiconductor Technologies (62 papers), Ga2O3 and related materials (47 papers), Radio Frequency Integrated Circuit Design (47 papers), Semiconductor Quantum Structures and Devices (30 papers), Semiconductor materials and interfaces (22 papers) and ZnO doping and properties (17 papers). The work is most often cited by research in Condensed Matter Physics (2.6k citations), Electronic, Optical and Magnetic Materials (1.3k citations), Electrical and Electronic Engineering (2.7k citations), Atomic and Molecular Physics, and Optics (703 citations) and Materials Chemistry (734 citations). Joachim Würfl has collaborated with scholars based in Germany, Austria and Taiwan. Frequent co-authors include Oliver Hilt, Eldad Bahat‐Treidel, Frank Brunner, G. Tränkle, R. Lossy, W. Heinrich, A. Knauer, Rimma Zhytnytska, J. Kuzmı́k and M. Ťapajna. Their work appears in journals such as Microelectronics Reliability, Applied Physics Letters, IEEE Transactions on Electron Devices, IEEE Electron Device Letters and physica status solidi (a).

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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Joachim Würfl

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