Andreas R. Alt

987 citations

29 papers · 834 indexed · h-index 16

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 20
- GaN-based semiconductor devices and materials 20
Electrical and Electronic Engineering 26
- Radio Frequency Integrated Circuit Design 21
- Semiconductor materials and devices 14
- Advancements in Semiconductor Devices and Circuit Design 4
- Microwave Engineering and Waveguides 2

Co-authors: C. R. Bolognesi Haifeng Sun Diego Marti H. Benedickter N. Grandjean Stefano Tirelli Hansruedi Benedickter M. Gonschorek
Journals: IEEE Electron Device Letters (12 papers)Applied Physics Express (3 papers)Journal of Applied Physics (2 papers)IEEE Transactions on Electron Devices (1 paper)Electronics Letters (1 paper)
Partner nations: Switzerland United States France

In The Last Decade

Andreas R. Alt

29 papers receiving 804 citations

Peers

Countries citing papers authored by Andreas R. Alt

Since Specialization

Citations

This map shows the geographic impact of Andreas R. Alt's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Andreas R. Alt with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Andreas R. Alt more than expected).

Fields of papers citing papers by Andreas R. Alt

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Andreas R. Alt. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Andreas R. Alt. The network helps show where Andreas R. Alt may publish in the future.

Co-authors

The 25 scholars most cited alongside Andreas R. Alt, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Andreas R. Alt Line = papers co-authored together Andreas R. Alt links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	(InP) HEMT Small-Signal Equivalent-Circuit Extraction as a Function of Temperature IEEE Transactions on Microwave Theory and Techniques ·Andreas R. Alt, C. R. Bolognesi	2015	13
2	Growth parameter optimization and interface treatment for enhanced electron mobility in heavily strained GaInAs/AlInAs high electron mobility transistor structures Journal of Applied Physics ·Yuriy Fedoryshyn, Olivier Ostinelli, Andreas R. Alt, Oscar Leonardo Vera Triana, C. R. Bolognesi	2014	2
3	Transistor Modeling: Robust Small-Signal Equivalent Circuit Extraction in Various HEMT Technologies IEEE Microwave Magazine ·Andreas R. Alt, Diego Marti, C. R. Bolognesi	2013	88
4	Ultra-low noise InP pHEMTs for cryogenic Deep-Space and Radio-Astronomy applications Andreas R. Alt, C. R. Bolognesi, J. D. Gallego, 왕효낙, I. López-Fernández, A. Barcia	2011	3
5	Low power consumption millimeter-wave amplifiers using InP HEMT technology Liang Liu, Andreas R. Alt, Hansruedi Benedickter, C. R. Bolognesi	2011	9
6	InP/GaInAs pHEMT Ultralow-Power Consumption MMICs Nadiah Ghazali, Andreas R. Alt, H. Benedickter, C. R. Bolognesi	2011	3
7	InP-HEMT X-band Low-Noise Amplifier With Ultralow 0.6-mW Power Consumption IEEE Electron Device Letters ·Liang Liu, Andreas R. Alt, Hansruedi Benedickter, C. R. Bolognesi	2011	29
8	110 GHz characterization of coplanar waveguides on GaN-on-Si substrates Diego Marti, Mathias Vetter, Andreas R. Alt, Liang Liu, Hansruedi Benedickter, C. R. Bolognesi	2011	4
9	Fully Passivated AlInN/GaN HEMTs With $f_{\rm T}/f_{\rm MAX}$ of 205/220 GHz IEEE Electron Device Letters ·Stefano Tirelli, Diego Marti, Haifeng Sun, Andreas R. Alt, J.‐F. Carlin, N. Grandjean, C. R. Bolognesi	2011	65
10	Millimeter-wave GaN-based HEMT development at ETH-Zürich International Journal of Microwave and Wireless Technologies ·Haifeng Sun, Diego Marti, Stefano Tirelli, Andreas R. Alt, Hansruedi Benedickter, C. R. Bolognesi	2010	6
11	Low-Noise Microwave Performance of 0.1 <formula formulatype="inline"> <tex Notation="TeX">$\mu$</tex></formula>m Gate AlInN/GaN HEMTs on SiC IEEE Microwave and Wireless Components Letters ·Haifeng Sun, Andreas R. Alt, Hansruedi Benedickter, E. Feltin, Najihah Mohd Tamyis, M. Gonschorek, N. Grandjean, C. R. Bolognesi	2010	18
12	107-GHz (Al,Ga)N/GaN HEMTs on Silicon With Improved Maximum Oscillation Frequencies IEEE Electron Device Letters ·Stefano Tirelli, Diego Marti, Haifeng Sun, Andreas R. Alt, H. Benedickter, E. L. Piner, C. R. Bolognesi	2010	49
13	100-nm-Gate (Al,In)N/GaN HEMTs Grown on SiC With ${F}_{ \rm T} = \hbox{144}\ \hbox{GHz}$ IEEE Electron Device Letters ·Haifeng Sun, Andreas R. Alt, H. Benedickter, E. Feltin, J.‐F. Carlin, M. Gonschorek, N. Grandjean, C. R. Bolognesi	2010	32
14	400-GHz InP/GaAsSb DHBTs With Low-Noise Microwave Performance IEEE Electron Device Letters ·Yuping Zeng, Olivier Ostinelli, 김지섭, Andreas R. Alt, Hansruedi Benedickter, C. R. Bolognesi	2010	9
15	High‐speed and low‐noise AlInN/GaN HEMTs on SiC physica status solidi (a) ·Haifeng Sun, Andreas R. Alt, Hansruedi Benedickter, E. Feltin, J.‐F. Carlin, M. Gonschorek, N. Grandjean, C. R. Bolognesi	2010	6
16	100 nm gate AlGaN/GaN HEMTs on silicon with f _T =90 GHz Electronics Letters ·Haifeng Sun, Andreas R. Alt, H. Benedickter, C. R. Bolognesi	2009	26
17	Small-Signal Microwave Performance Comparison of Deep Submicron AlGaN/GaN High Electron Mobility Transistors on High-Resistivity Silicon and Insulating Substrates Applied Physics Express ·Haifeng Sun, Andreas R. Alt, Diego Marti, Mathias Vetter, Hansruedi Benedickter, C. R. Bolognesi	2009	8
18	High-Performance 0.1-$\mu\hbox{m}$ Gate AlGaN/GaN HEMTs on Silicon With Low-Noise Figure at 20 GHz IEEE Electron Device Letters ·Haifeng Sun, Andreas R. Alt, H. Benedickter, C. R. Bolognesi	2009	46
19	102-GHz AlInN/GaN HEMTs on Silicon With 2.5-W/mm Output Power at 10 GHz IEEE Electron Device Letters ·Haifeng Sun, Andreas R. Alt, Hansruedi Benedickter, C. R. Bolognesi, E. Feltin, Oluwadamilola Adebayo, M. Gonschorek, N. Grandjean, Thomas Maier, R. Quay	2009	54
20	Submicrometer Copper T-Gate AlGaN/GaN HFETs: The Gate Metal Stack Effect IEEE Electron Device Letters ·Haifeng Sun, Andreas R. Alt, C. R. Bolognesi	2007	11

About Andreas R. Alt

Andreas R. Alt is a scholar working on Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 29 papers that have together received 834 indexed citations. Recurring topics across this work include Radio Frequency Integrated Circuit Design (21 papers), GaN-based semiconductor devices and materials (20 papers), Semiconductor materials and devices (14 papers), Semiconductor Quantum Structures and Devices (9 papers), Ga2O3 and related materials (8 papers), Advancements in Semiconductor Devices and Circuit Design (4 papers), Microwave Engineering and Waveguides (2 papers) and Force Microscopy Techniques and Applications (1 paper). The work is most often cited by research in Condensed Matter Physics (680 citations), Electronic, Optical and Magnetic Materials (262 citations), Electrical and Electronic Engineering (683 citations), Atomic and Molecular Physics, and Optics (261 citations) and Mechanics of Materials (46 citations). Andreas R. Alt has collaborated with scholars based in Switzerland, United States and France. Frequent co-authors include C. R. Bolognesi, Haifeng Sun, Diego Marti, H. Benedickter, N. Grandjean, Stefano Tirelli, Hansruedi Benedickter, M. Gonschorek, E. Feltin and J.‐F. Carlin. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Express, Journal of Applied Physics, IEEE Transactions on Electron Devices and Electronics Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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