Shiro Ozaki

753 total citations
50 papers, 596 citations indexed

About

Shiro Ozaki is a scholar working on Electrical and Electronic Engineering, Condensed Matter Physics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Shiro Ozaki has authored 50 papers receiving a total of 596 indexed citations (citations by other indexed papers that have themselves been cited), including 41 papers in Electrical and Electronic Engineering, 35 papers in Condensed Matter Physics and 21 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Shiro Ozaki's work include GaN-based semiconductor devices and materials (35 papers), Radio Frequency Integrated Circuit Design (21 papers) and Ga2O3 and related materials (16 papers). Shiro Ozaki is often cited by papers focused on GaN-based semiconductor devices and materials (35 papers), Radio Frequency Integrated Circuit Design (21 papers) and Ga2O3 and related materials (16 papers). Shiro Ozaki collaborates with scholars based in Japan, China and United States. Shiro Ozaki's co-authors include Naoya Okamoto, Toshihiro Ohki, Kozo Makiyama, Yuichi Minoura, Masaru Sato, Norikazu Nakamura, K. Joshin, Junji Kotani, Atsushi Yamada and Kenya Nishiguchi and has published in prestigious journals such as IEEE Transactions on Electron Devices, Japanese Journal of Applied Physics and IEEE Electron Device Letters.

In The Last Decade

Shiro Ozaki

44 papers receiving 568 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name	h						Papers	Cites
Shiro Ozaki Japan	13	477	430	225	115	110	50	596
Yang Lu China	14	398 0.8×	415 1.0×	169 0.8×	86 0.7×	121 1.1×	65	530
Quentin Diduck United States	9	412 0.9×	328 0.8×	126 0.6×	100 0.9×	114 1.0×	31	490
Don Disney United States	12	827 1.7×	531 1.2×	244 1.1×	91 0.8×	98 0.9×	35	943
H. Blanck France	17	693 1.5×	503 1.2×	120 0.5×	96 0.8×	271 2.5×	78	788
P. Prajoon India	14	483 1.0×	297 0.7×	125 0.6×	106 0.9×	150 1.4×	39	606
Satyaki Ganguly United States	13	414 0.9×	524 1.2×	306 1.4×	144 1.3×	115 1.0×	30	630
Ioulia Smorchkova United States	16	610 1.3×	586 1.4×	117 0.5×	92 0.8×	206 1.9×	31	724
Junjie Yang China	13	271 0.6×	275 0.6×	135 0.6×	110 1.0×	98 0.9×	55	423
R. Schwindt United States	14	676 1.4×	687 1.6×	238 1.1×	106 0.9×	254 2.3×	30	822
Tongde Huang China	13	442 0.9×	371 0.9×	189 0.8×	156 1.4×	133 1.2×	44	586

Countries citing papers authored by Shiro Ozaki

Since Specialization

Citations

This map shows the geographic impact of Shiro Ozaki's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Shiro Ozaki with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Shiro Ozaki more than expected).

Fields of papers citing papers by Shiro Ozaki

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Shiro Ozaki. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Shiro Ozaki. The network helps show where Shiro Ozaki may publish in the future.

Co-authorship network of co-authors of Shiro Ozaki

This figure shows the co-authorship network connecting the top 25 collaborators of Shiro Ozaki. A scholar is included among the top collaborators of Shiro Ozaki based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Shiro Ozaki. Shiro Ozaki is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

Nakasha, Yasuhiro, et al.. (2025). 37.1-dBm W-Band Power Amplifier Module Using GaN-Based HEMTs Stabilized With Resistive Back Metal for Broadband Wireless Applications. IEEE Microwave and Wireless Technology Letters. 35(3). 358–361.

Nakasha, Yasuhiro, Shiro Ozaki, Naoya Okamoto, et al.. (2025). A 9.3% PAE, 9.2-dBm POUT power amplifier and -1.9-dB Gc upconverting mixer using InP-based MOS HEMTs for 300-GHz phased-array transmitters. IEICE Electronics Express. 22(5). 20240699–20240699.

Ozaki, Shiro. (2024). InP-based MOS-HEMT for Sub-THz High-power Amplifiers. The Journal of the Institute of Electrical Engineers of Japan. 144(6). 335–338. 1 indexed citations

Ozaki, Shiro, et al.. (2024). High Output Power and Efficiency 300-GHz Band InP-Based MOS-HEMT Power Amplifiers With Composite-Channel and Double-Side Doping. IEEE Journal of the Electron Devices Society. 12. 965–973. 1 indexed citations

Zhou, Liang, et al.. (2024). Sub-THz SC-FDE MIMO Systems with Deep Neural Network Equalization for 100 Gbps of 6G. 1–5.

Hirano, Takuichi, et al.. (2024). Approximate Equation of Design Parameter and Transmission Phase for Microstrip Line Bends. 910–912.

Ozaki, Shiro, et al.. (2023). High-Efficiency 250-320GHz Power Amplifiers Using InP-Based Metal-Oxide-Semiconductor High-Electron-Mobility Transistors. IEICE Transactions on Electronics. E106.C(11). 661–668. 4 indexed citations

Ozaki, Shiro, et al.. (2023). Effect of oxidant sources on carbon-related impurities in ALD-Al₂O₃ for solid-state devices. Applied Physics Express. 16(9). 91001–91001. 5 indexed citations

Ozaki, Shiro, et al.. (2022). Low-Resistance and Low-Thermal-Budget Ohmic Contact by Introducing Periodic Microstructures for AlGaN/AlN/GaN HEMTs. IEEE Transactions on Electron Devices. 69(6). 3073–3078. 8 indexed citations

10.

Ozaki, Shiro, et al.. (2022). Surface-oxide-controlled InGaAs/InAlAs inverted-type metal-oxide-semiconductor high electron mobility transistors for sub-THz high-power amplifiers. Japanese Journal of Applied Physics. 62(SC). SC1033–SC1033. 5 indexed citations

11.

Okamoto, Naoya, Atsushi Takahashi, Yuichi Minoura, et al.. (2020). Deep GaN through-substrate via etching using Cl2/BCl3 inductively coupled plasma. Journal of Vacuum Science & Technology A Vacuum Surfaces and Films. 38(6). 4 indexed citations

12.

Ozaki, Shiro, Kozo Makiyama, Toshihiro Ohki, et al.. (2020). Improved DC performance and current stability of ultrathin-Al ₂ O ₃ /InAlN/GaN MOS-HEMTs with post-metallization-annealing process. Semiconductor Science and Technology. 35(3). 35027–35027. 13 indexed citations

13.

Ozaki, Shiro, Atsushi Yamada, Toshihiro Ohki, et al.. (2020). Thermally stable and low trap density SiN _x /AlON bi-layer structure for AlGaN/GaN MIS-HEMTs. Japanese Journal of Applied Physics. 59(4). 46505–46505. 6 indexed citations

14.

Minoura, Yuichi, Toshihiro Ohki, Naoya Okamoto, et al.. (2019). Surface activated bonding of SiC/diamond for thermal management of high-output power GaN HEMTs. Japanese Journal of Applied Physics. 59(SG). SGGD03–SGGD03. 37 indexed citations

15.

Ohki, Toshihiro, Atsushi Yamada, Yuichi Minoura, et al.. (2018). An Over 20-W/mm S-Band InAlGaN/GaN HEMT With SiC/Diamond-Bonded Heat Spreader. IEEE Electron Device Letters. 40(2). 287–290. 68 indexed citations

16.

Ozaki, Shiro, Kozo Makiyama, Toshihiro Ohki, et al.. (2015). Surface‐oxide‐controlled InAlN/GaN MOS‐HEMTs with water vapor. physica status solidi (a). 213(5). 1259–1262. 9 indexed citations

17.

Ohki, Toshihiro, Shiro Ozaki, Kozo Makiyama, et al.. (2015). X-Ku wide-bandwidth GaN HEMT MMIC Amplifier with Small Deviation of Output Power and PAE. 114(391). 59–63. 1 indexed citations

18.

Joshin, K., et al.. (2014). Millimeter-wave GaN HEMT model with V DS dependence of C DS for power amplifier applications. Asia-Pacific Microwave Conference. 582–584. 2 indexed citations

19.

Ozaki, Shiro, Kozo Makiyama, Toshihiro Ohki, et al.. (2014). Reduction in current collapse of AlGaN/GaN HEMTs using methyl silsesquioxane‐based low‐k insulator films. physica status solidi (a). 212(5). 1153–1157. 5 indexed citations

20.

Ohki, Toshihiro, Shiro Ozaki, Kozo Makiyama, et al.. (2014). X-Ku Wide-Bandwidth GaN HEMT MMIC Amplifier with Small Deviation of Output Power and PAE. 1–4. 3 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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