P. Kurpas

675 total citations
52 papers, 547 citations indexed

About

P. Kurpas is a scholar working on Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Condensed Matter Physics. According to data from OpenAlex, P. Kurpas has authored 52 papers receiving a total of 547 indexed citations (citations by other indexed papers that have themselves been cited), including 44 papers in Electrical and Electronic Engineering, 22 papers in Atomic and Molecular Physics, and Optics and 19 papers in Condensed Matter Physics. Recurrent topics in P. Kurpas's work include Radio Frequency Integrated Circuit Design (20 papers), Semiconductor Quantum Structures and Devices (20 papers) and GaN-based semiconductor devices and materials (19 papers). P. Kurpas is often cited by papers focused on Radio Frequency Integrated Circuit Design (20 papers), Semiconductor Quantum Structures and Devices (20 papers) and GaN-based semiconductor devices and materials (19 papers). P. Kurpas collaborates with scholars based in Germany, France and Portugal. P. Kurpas's co-authors include W. Richter, M. Weyers, M. Zorn, J.‐T. Zettler, W. Heinrich, Markus Pristovsek, Frank Brunner, F. Reinhardt, Serguei Chevtchenko and K. Haberland and has published in prestigious journals such as Physical review. B, Condensed matter, Scientific Reports and Applied Surface Science.

In The Last Decade

P. Kurpas

50 papers receiving 528 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
P. Kurpas Germany 14 418 312 145 114 39 52 547
Yoshiharu Yamauchi Japan 14 392 0.9× 356 1.1× 170 1.2× 150 1.3× 20 0.5× 39 534
M. Ozeki Japan 12 396 0.9× 364 1.2× 105 0.7× 130 1.1× 12 0.3× 36 487
M. G. Lamont United States 12 354 0.8× 464 1.5× 85 0.6× 178 1.6× 28 0.7× 18 579
C. Anayama Japan 11 303 0.7× 295 0.9× 73 0.5× 71 0.6× 18 0.5× 25 378
M. A. A. Pudensi United States 11 271 0.6× 268 0.9× 69 0.5× 154 1.4× 69 1.8× 17 489
J. C. P. Chang United States 14 378 0.9× 444 1.4× 52 0.4× 163 1.4× 15 0.4× 28 512
G. F. McLane United States 11 287 0.7× 143 0.5× 91 0.6× 152 1.3× 17 0.4× 43 409
K. L. Hess United States 10 332 0.8× 315 1.0× 56 0.4× 104 0.9× 14 0.4× 22 413
M. Bissiri Italy 13 281 0.7× 394 1.3× 206 1.4× 117 1.0× 15 0.4× 18 466
V. G. Mokerov Russia 11 234 0.6× 253 0.8× 77 0.5× 89 0.8× 14 0.4× 76 350

Countries citing papers authored by P. Kurpas

Since Specialization
Citations

This map shows the geographic impact of P. Kurpas's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Kurpas with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Kurpas more than expected).

Fields of papers citing papers by P. Kurpas

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Kurpas. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Kurpas. The network helps show where P. Kurpas may publish in the future.

Co-authorship network of co-authors of P. Kurpas

This figure shows the co-authorship network connecting the top 25 collaborators of P. Kurpas. A scholar is included among the top collaborators of P. Kurpas based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with P. Kurpas. P. Kurpas is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Carvalho, Nuno Borges, J.M. Sampaio, P. Gonçalves, et al.. (2022). Pioneering evaluation of GaN transistors in geostationary satellites. Scientific Reports. 12(1). 12886–12886. 4 indexed citations
2.
Wentzel, Andreas, Serguei Chevtchenko, P. Kurpas, & W. Heinrich. (2015). A flexible GaN MMIC enabling digital power amplifiers for the future wireless infrastructure. 1–4. 19 indexed citations
3.
Chevtchenko, Serguei, et al.. (2014). A Compact GaN-MMIC Non-Uniform Distributed Power Amplifier for 2 to 12 GHz. German Microwave Conference. 1–3. 6 indexed citations
4.
Würfl, Joachim, Oliver Hilt, Eldad Bahat‐Treidel, et al.. (2013). Enabling GaN high speed devices: Microwave meets power electronics - And vice versa. European Microwave Integrated Circuit Conference. 176–179. 3 indexed citations
5.
6.
Wentzel, Andreas, Serguei Chevtchenko, P. Kurpas, & W. Heinrich. (2013). A dual-band voltage-mode class-D PA for 0.8/1.8 GHz applications. 11 indexed citations
7.
Meliani, Chafik, et al.. (2012). A high-gain X-band GaN-MMIC power amplifier. German Microwave Conference. 1–4. 4 indexed citations
8.
Bengtsson, Olof, Serguei Chevtchenko, Ralf Doerner, P. Kurpas, & W. Heinrich. (2011). Load-pull investigation of GaN-HEMT for supply modulated applications. German Microwave Conference. 1–4. 2 indexed citations
9.
Wiechuła, Danuta, et al.. (2006). Multivariate Statistical Analysis of Metal Concentrations in Teeth of Residents of Silesian Region, Southern Poland. Archives of Environmental Contamination and Toxicology. 51(2). 314–320. 13 indexed citations
10.
Kurpas, P., et al.. (2005). A 3.2 W coplanar single-device X-band amplifier with GaAs HBT. 49–52. 1 indexed citations
11.
Kurpas, P., A. Maaßdorf, P. Heymann, et al.. (2005). Flip-chip mounted 26 V GalnP/GaAs power UBTs. 561–564. 7 indexed citations
12.
Brunner, Frank, et al.. (2003). Investigation of short-term current gain stability of GaInP/GaAs-HBTs grown by MOVPE. Microelectronics Reliability. 43(6). 839–844. 2 indexed citations
13.
Kurpas, P., Frank Brunner, P. Heymann, et al.. (2002). High-voltage GaAs power-HBTs for base-station amplifiers. 2. 633–636. 16 indexed citations
14.
Zorn, M., et al.. (2002). Real-time monitoring of P-based semiconductor growth by linear-optical spectroscopy. 590–593. 1 indexed citations
15.
Ressel, P., P. H. Hao, W. Österle, et al.. (2000). Pd/Sb(Zn) and Pd/Ge(Zn) ohmic contacts on p-type indium gallium arsenide: The employment of the solid phase regrowth principle to achieve optimum electrical and metallurgical properties. Journal of Electronic Materials. 29(7). 964–972. 1 indexed citations
16.
Zorn, M., P. Kurpas, A. Shkrebtii, et al.. (1999). Correlation of InGaP(001) surface structure during growth and bulk ordering. Physical review. B, Condensed matter. 60(11). 8185–8190. 47 indexed citations
17.
Kurpas, P., et al.. (1998). Growth monitoring of GaInP/GaAs heterojunction bipolar transistors by reflectance anisotropy spectroscopy. Journal of Crystal Growth. 195(1-4). 217–222. 1 indexed citations
18.
Richter, E., et al.. (1997). Hydrogen in carbon-doped GaAs base layer of GaInP/GaAs heterojunction bipolar transistors. Materials Science and Engineering B. 44(1-3). 337–340. 7 indexed citations
19.
Richter, W., et al.. (1992). Photodecomposition of precursors for metal organic vapour phase epitaxy. Applied Surface Science. 54. 1–7. 2 indexed citations
20.
Richter, W., et al.. (1991). Gas phase studies of MOVPE by optical methods. Journal of Crystal Growth. 107(1-4). 13–25. 29 indexed citations

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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