P. Fini

8.9k citations

93 papers · 7.5k indexed · 2 hit papers · h-index 42

Impact in

Condensed Matter Physics top 0.05%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 0.5%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 92
- GaN-based semiconductor devices and materials 92
Electronic, Optical and Magnetic Materials 52
- Ga2O3 and related materials 52

Co-authors: James S. Speck Steven P. DenBaars Umesh K. Mishra J. P. Ibbetson S. Keller B. Heying E. J. Tarsa Shuji Nakamura
Journals: Applied Physics Letters (25 papers)Journal of Crystal Growth (13 papers)Journal of Applied Physics (9 papers)Japanese Journal of Applied Physics (8 papers)MRS Internet Journal of Nitride Semiconductor Research (5 papers)
Partner nations: United States Germany Sweden

In The Last Decade

P. Fini

90 papers receiving 7.3k citations

Hit Papers

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Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors 2006 · 553 citations

Peers

Countries citing papers authored by P. Fini

Since Specialization

Citations

This map shows the geographic impact of P. Fini's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by P. Fini with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites P. Fini more than expected).

Fields of papers citing papers by P. Fini

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by P. Fini. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by P. Fini. The network helps show where P. Fini may publish in the future.

Co-authors

The 25 scholars most cited alongside P. Fini, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with P. Fini Line = papers co-authored together P. Fini links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Characterization of nanoscale electronic structure in nonpolar GaN using scanning capacitance microscopy Journal of Applied Physics ·van Dam A, Edward T. Yu, B. A. Haskell, P. Fini, Shuji Nakamura, James S. Speck, Steven P. DenBaars	2008	6
2	Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics ·Shigefusa F. Chichibu, Akira Uedono, Takeyoshi Onuma, B. A. Haskell, A. Chakraborty, T. Koyama, P. Fini, S. Keller, Steven P. DenBaars, James S. Speck, Umesh K. Mishra, Shuji Nakamura, S. Yamaguchi, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Jung Han, T. Sota	2007	26
3	Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors Nature Materials ·Shigefusa F. Chichibu, Akira Uedono, Takeyoshi Onuma, B. A. Haskell, Arpan Chakraborty, Takahiro Koyama, P. Fini, S. Keller, Steven P. DenBaars, James S. Speck, Umesh K. Mishra, Shuji Nakamura, Shigeo Yamaguchi, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Jung Han, Takayuki Sota Hit paper breakdown →	2006	553
4	Photoluminescence of a ‐plane GaN: comparison between MOCVD and HVPE grown layers Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·T. Paskova, R. Schifano, T. Malinauskas, J. P. Bergman, B. Ḿonemar, S. Figge, D. Hommel, B. A. Haskell, P. Fini, James S. Speck, Shuji Nakamura	2006	7
5	Phase selection of microcrystalline GaN synthesized in supercritical ammonia Journal of Crystal Growth ·Tadao Hashimoto, Kenji Fujito, Rajat Sharma, Ericq Horler, P. Fini, James S. Speck, Shuji Nakamura	2006	21
6	Defect reduction in (11¯00) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy Applied Physics Letters ·B. A. Haskell, Troy J. Baker, Melvin McLaurin, Feng Wu, P. Fini, Steven P. DenBaars, James S. Speck, Shuji Nakamura	2005	165
7	292 nm AlGaN Single-Quantum Well Light Emitting Diodes Grown on Transparent AlN Base Japanese Journal of Applied Physics ·Camilla Elise Joergensen, P. Morgan Pattison, John F. Kaeding, Rajat Sharma, P. Fini, Shuji Nakamura	2003	81
8	Morphological and optical properties of InGaN laser diodes on laterally overgrown GaN Journal of Crystal Growth ·M. Hansen, P. Fini, Michael D. Craven, B. Heying, James S. Speck, Steven P. DenBaars	2002	17
9	HBT on LEO GaN L. McCarthy, Y. Smorchkova, P. Fini, Huili Grace Xing, M.J.W. Rodwell, James S. Speck, Steven P. DenBaars, Umesh K. Mishra	2002	1
10	Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors Applied Physics Letters ·L. McCarthy, I. P. Smorchkova, Huili Grace Xing, P. Fini, S. Keller, James S. Speck, Steven P. DenBaars, M.J.W. Rodwell, Umesh K. Mishra	2001	32
11	Electrical transport of an AlGaN/GaN two-dimensional electron gas MRS Internet Journal of Nitride Semiconductor Research ·A. Saxler, P. Debray, R. Perrin, S. Elhamri, W. C. Mitchel, C. R. Elsass, I. P. Smorchkova, B. Heying, E. Haus, P. Fini, J. P. Ibbetson, S. Keller, P. M. Petroff, Steven P. DenBaars, Umesh K. Mishra, James S. Speck	2000	1
12	Determination of tilt in the lateral epitaxial overgrowth of GaN using X-ray diffraction Journal of Crystal Growth ·P. Fini, H. Marchand, J. P. Ibbetson, Steven P. DenBaars, Umesh K. Mishra, James S. Speck	2000	83
13	Effects of growth conditions on the incorporation of oxygen in AlGaN layers grown by plasma assisted molecular beam epitaxy Applied Physics Letters ·C. R. Elsass, Tom Mates, B. Heying, C. Poblenz, P. Fini, P. M. Petroff, Steven P. DenBaars, James S. Speck	2000	46
14	Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer MRS Internet Journal of Nitride Semiconductor Research ·H. Marchand, N. Zhang, Lingyan Zhao, Yuval Golan, S. J. Rosner, G. Girolami, P. Fini, J. P. Ibbetson, S. Keller, Steven P. DenBaars, James S. Speck, Umesh K. Mishra	1999	110
15	Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy Journal of Applied Physics ·I. P. Smorchkova, C. R. Elsass, J. P. Ibbetson, R. Vetury, B. Heying, P. Fini, E. Haus, Steven P. DenBaars, James S. Speck, Umesh K. Mishra	1999	364
16	Atomic force microscopy observation of threading dislocation density reduction in lateral epitaxial overgrowth of gallium nitride by MOCVD MRS Internet Journal of Nitride Semiconductor Research ·H. Marchand, J. P. Ibbetson, P. Fini, P. Kozodoy, S. Keller, Steven P. DenBaars, James S. Speck, Umesh K. Mishra	1998	71
17	Electrical characterization of GaN p-n junctions with and without threading dislocations Applied Physics Letters ·P. Kozodoy, J. P. Ibbetson, H. Marchand, P. Fini, S. Keller, James S. Speck, Steven P. DenBaars, Umesh K. Mishra	1998	318
18	Microstructure of GaN laterally overgrown by metalorganic chemical vapor deposition Applied Physics Letters ·H. Marchand, Ítalo Henrique Alves da Silva, J. P. Ibbetson, P. Fini, P. Kozodoy, S. Keller, James S. Speck, Steven P. DenBaars, Umesh K. Mishra	1998	197
19	Substrate Reactivity and “Controlled Contamination” in Metalorganic Chemical Vapor Deposition of GaN on Sapphire Japanese Journal of Applied Physics ·Yuval Golan, P. Fini, Steven P. DenBaars, James S. Speck	1998	14
20	Substrate Surface Treatments and “Controlled Contamination” in GaN / Sapphire MOCVD MRS Proceedings ·Yuval Golan, P. Fini, Steven P. DenBaars, James S. Speck	1997	3

About P. Fini

P. Fini is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Mechanics of Materials, Materials Chemistry and Electrical and Electronic Engineering, having authored 93 papers that have together received 7.5k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (92 papers), Ga2O3 and related materials (52 papers), ZnO doping and properties (40 papers), Semiconductor materials and devices (31 papers), Metal and Thin Film Mechanics (29 papers), Semiconductor Quantum Structures and Devices (11 papers), Silicon Carbide Semiconductor Technologies (6 papers) and Acoustic Wave Resonator Technologies (3 papers). The work is most often cited by research in Condensed Matter Physics (6.8k citations), Electronic, Optical and Magnetic Materials (3.4k citations), Atomic and Molecular Physics, and Optics (2.3k citations), Materials Chemistry (3.2k citations) and Mechanics of Materials (1.6k citations). P. Fini has collaborated with scholars based in United States, Germany and Sweden. Frequent co-authors include James S. Speck, Steven P. DenBaars, Umesh K. Mishra, J. P. Ibbetson, S. Keller, B. Heying, E. J. Tarsa, Shuji Nakamura, H. Marchand and C. R. Elsass. Their work appears in journals such as Applied Physics Letters, Journal of Crystal Growth, Journal of Applied Physics, Japanese Journal of Applied Physics and MRS Internet Journal of Nitride Semiconductor Research.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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