S. Heikman

5.8k citations

80 papers · 4.8k indexed · h-index 35

Impact in

Condensed Matter Physics top 0.1%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 1%
- Ga2O3 and related materials

Papers in

Condensed Matter Physics 75
- GaN-based semiconductor devices and materials 75
Electronic, Optical and Magnetic Materials 27
- Ga2O3 and related materials 27

Co-authors: Umesh K. Mishra S. Keller Steven P. DenBaars D. Buttari James S. Speck Alessandro Chini A. Chakraborty L. Shen
Journals: IEEE Electron Device Letters (13 papers)Applied Physics Letters (8 papers)IEEE Microwave and Wireless Components Letters (4 papers)Journal of Applied Physics (4 papers)Japanese Journal of Applied Physics (3 papers)
Partner nations: United States United Kingdom Italy

In The Last Decade

S. Heikman

79 papers receiving 4.5k citations

Peers

Countries citing papers authored by S. Heikman

Since Specialization

Citations

This map shows the geographic impact of S. Heikman's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by S. Heikman with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites S. Heikman more than expected).

Fields of papers citing papers by S. Heikman

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by S. Heikman. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by S. Heikman. The network helps show where S. Heikman may publish in the future.

Co-authorship network

The 25 scholars most cited alongside S. Heikman, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with S. Heikman Line = papers co-authored together S. Heikman links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	A 97.8% Efficient GaN HEMT Boost Converter With 300-W Output Power at 1 MHz IEEE Electron Device Letters ·Yifeng Wu, Matt Jacob-Mitos, M. Moore, S. Heikman	2008	231
2	AlGaN/GaN-on-SiC HEMT Technology Status R.P. Smith, S.T. Sheppard, Yifeng Wu, S. Heikman, Simon M. Wood, W.L. Pribble, J. Milligan	2008	16
3	Effect of ohmic contacts on buffer leakage of GaN transistors IEEE Electron Device Letters ·Y. Dora, A. Chakraborty, S. Heikman, L. McCarthy, S. Keller, Steven P. DenBaars, Umesh K. Mishra	2006	53
4	Microwave Class-F and Inverse Class-F Power Amplifiers Designs using GaN Technology and GaAs pHEMT Si‐Ping Gao, Peter Butterworth, A. Sambell, Jianxing Wu, Hongtao Xu, S. Heikman, Umesh K. Mishra, R.A. York	2006	9
5	MMIC class-F power amplifiers using field-plated GaN HEMTs IEE Proceedings - Microwaves Antennas and Propagation ·Si‐Ping Gao, Jianxing Wu, Hongtao Xu, S.I. Long, S. Heikman, Umesh K. Mishra, R.A. York	2006	5
6	High power GaN oscillators using field-plated HEMT structure IEEE MTT-S International Microwave Symposium Digest, 2005. ·Hongtao Xu, Jianxing Wu, S. Heikman, S. Keller, Umesh K. Mishra, R.A. York	2005	12
7	Influence of the Dynamic Access Resistance in the<tex>$g_m$</tex>and<tex>$f_T$</tex>Linearity of AlGaN/GaN HEMTs IEEE Transactions on Electron Devices ·Tomás Palacios, Siddharth Rajan, A. Chakraborty, S. Heikman, S. Keller, Steven P. DenBaars, Umesh K. Mishra	2005	165
8	Switching characteristics of high-breakdown voltage AlGaN/GaN HEMTs Y. Dora, Chang Soo Suh, A. Chakraborty, S. Heikman, S. Chandrasekarana, V. Mehrotra, Umesh K. Mishra	2005	5
9	Al Ga N ∕ Ga N metal-oxide-semiconductor heterostructure field-effect transistors using barium strontium titanate Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·P. Hansen, Lvkang Shen, Yuan Wu, A. Rodríguez, K. Terao, S. Heikman, D. Buttari, T. R. Taylor, Steven P. DenBaars, Umesh K. Mishra, R.A. York, James S. Speck	2004	13
10	Effect of gate recessing on linearity characteristics of AlGaN/GaN HEMTs IRIS UNIMORE (University of Modena and Reggio Emilia) ·Alessandro Chini, D. Buttari, R. Coffie, L. Shen, Tomás Palacios, S. Heikman, A. Chakraborty, S. Keller, Umesh K. Mishra	2004	3
11	High performance AlGaN/GaN HEMTs with a field plated gate structure IRIS UNIMORE (University of Modena and Reggio Emilia) ·Alessandro Chini, D. Buttari, R. Coffie, Likun Shen, S. Heikman, A. Chakraborty, S. Keller, Umesh K. Mishra	2004	5
12	P-GaN/AlGaN/GaN high electron mobility transistors IRIS UNIMORE (University of Modena and Reggio Emilia) ·R. Coffie, S. Heikman, D. Buttari, Sarah L. Keller, Alessandro Chini, L. Shen, N. Zhang, Louise Johansson Spaak, Debdeep Jena, Umesh K. Mishra	2003	3
13	Non-planar Selective Area Growth and Characterization of GaN and AlGaN Japanese Journal of Applied Physics ·S. Heikman, S. Keller, Steven P. DenBaars, Umesh K. Mishra, F. Bertram, J. Christen	2003	24
14	GaN planar-doped-barrier electron emitter with piezoelectric surface barrier lowering Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ·L. Shen, Fei Chun Cheng, Vera Lucia Mira Gonçalves, S. Heikman, Umesh K. Mishra	2003	2
15	2.1 A/mm current density AlGaN/GaN HEMT Electronics Letters ·Alessandro Chini, R. Coffie, Gaudenzio Meneghesso, Enrico Zanoni, D. Buttari, S. Heikman, S. Keller, Umesh K. Mishra	2003	33
16	AlGaN/GaN current aperture vertical electron transistors I. Ben-Yaacov, Sebastián Donoso Rodríguez, S. Heikman, Steven P. DenBaars, Umesh K. Mishra	2003	10
17	Realization of wide electron slabs by polarization bulk doping in graded III–V nitride semiconductor alloys Applied Physics Letters ·Debdeep Jena, S. Heikman, Daniel Green, D. Buttari, R. Coffie, Huili Grace Xing, S. Keller, Steven P. DenBaars, James S. Speck, Umesh K. Mishra, Ioulia Smorchkova	2002	151
18	Indium-surfactant-assisted growth of high-mobility AlN/GaN multilayer structures by metalorganic chemical vapor deposition Applied Physics Letters ·S. Keller, S. Heikman, I. Ben-Yaacov, L. Shen, Steven P. DenBaars, Umesh K. Mishra	2001	55
19	AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy Journal of Applied Physics ·I. P. Smorchkova, 郭师峰, Thomas E. Mates, L. Shen, S. Heikman, Brendan Moran, S. Keller, Steven P. DenBaars, James S. Speck, Umesh K. Mishra	2001	261
20	Mass Transport Regrowth of GaN for Ohmic Contacts to AlGaN/GaN physica status solidi (a) ·S. Heikman, S. Keller, Brendan Moran, R. Coffie, Steven P. DenBaars, Umesh K. Mishra	2001	7

About S. Heikman

S. Heikman is a scholar working on Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Atomic and Molecular Physics, and Optics and Materials Chemistry, having authored 80 papers that have together received 4.8k indexed citations. Recurring topics across this work include GaN-based semiconductor devices and materials (75 papers), Radio Frequency Integrated Circuit Design (34 papers), Ga2O3 and related materials (27 papers), Semiconductor materials and devices (22 papers), Semiconductor Quantum Structures and Devices (19 papers), ZnO doping and properties (18 papers), Silicon Carbide Semiconductor Technologies (13 papers) and Advanced Power Amplifier Design (11 papers). The work is most often cited by research in Condensed Matter Physics (4.4k citations), Electronic, Optical and Magnetic Materials (2.2k citations), Electrical and Electronic Engineering (3.1k citations), Atomic and Molecular Physics, and Optics (1.0k citations) and Materials Chemistry (1.2k citations). S. Heikman has collaborated with scholars based in United States, United Kingdom and Italy. Frequent co-authors include Umesh K. Mishra, S. Keller, Steven P. DenBaars, D. Buttari, James S. Speck, Alessandro Chini, A. Chakraborty, L. Shen, R. Coffie and Tomás Palacios. Their work appears in journals such as IEEE Electron Device Letters, Applied Physics Letters, IEEE Microwave and Wireless Components Letters, Journal of Applied Physics and Japanese Journal of Applied Physics.

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