Bastien Bonef

986 citations

44 papers · 805 indexed · h-index 17

Impact in

Condensed Matter Physics top 2%
- GaN-based semiconductor devices and materials
Electronic, Optical and Magnetic Materials top 10%
- Ga2O3 and related materials

Papers in ⓘ

Condensed Matter Physics 20
- GaN-based semiconductor devices and materials 20
Mechanics of Materials 22
- Metal and Thin Film Mechanics 22

Co-authors: James S. Speck (28 shared papers)Steven P. DenBaars (15 shared papers)Shuji Nakamura (14 shared papers)Feng Wu (7 shared papers)Hongjian Li (7 shared papers)Claude Weisbuch (3 shared papers)Yuh‐Renn Wu (3 shared papers)Akhil Mauze (1 shared paper)
Journals: Applied Physics Letters (6 papers)Microscopy and Microanalysis (4 papers)Journal of Applied Physics (4 papers)Optics Express (3 papers)Semiconductor Science and Technology (3 papers)
Partner nations: United States France Taiwan

In The Last Decade

Bastien Bonef

44 papers receiving 775 citations

Peers

Countries citing papers authored by Bastien Bonef

Since Specialization

Citations

This map shows the geographic impact of Bastien Bonef's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Bastien Bonef with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Bastien Bonef more than expected).

Fields of papers citing papers by Bastien Bonef

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Bastien Bonef. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Bastien Bonef. The network helps show where Bastien Bonef may publish in the future.

Co-authors

The 25 scholars most cited alongside Bastien Bonef, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Bastien Bonef Line = papers co-authored together Bastien Bonef links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

Showing the 20 most-cited of 44 papers — load more, or switch the sort, to bring in the rest.

#	Work
1	Localization landscape theory of disorder in semiconductors. II. Urbach tails of disordered quantum well layers Physical review. B. ·Marco Piccardo, Chikang Li, Yuh‐Renn Wu, James S. Speck, Bastien Bonef, Robert M. Farrell, Marcel Filoche, Lucio Martinelli, Jacques Peretti, Claude Weisbuch	2017	77
2	AlGaN Deep-Ultraviolet Light-Emitting Diodes Grown on SiC Substrates ACS Photonics ·Burhan K. SaifAddin, Abdullah Almogbel, Christian J. Zollner, Feng Wu, Bastien Bonef, Michael Iza, Shuji Nakamura, Steven P. DenBaars, James S. Speck	2020	76
3	Metal-oxide catalyzed epitaxy (MOCATAXY): the example of the O plasma-assisted molecular beam epitaxy of β-(Al _x Ga₁₋ _x )₂O₃/β-Ga₂O₃ heterostructures Applied Physics Express ·Patrick Vogt, Akhil Mauze, Feng Wu, Bastien Bonef, James S. Speck	2018	55
4	Polarized monolithic white semipolar (20–21) InGaN light-emitting diodes grown on high quality (20–21) GaN/sapphire templates and its application to visible light communication Nano Energy ·Michel Khoury, Hongjian Li, Panpan Li, Yi Chao Chow, Bastien Bonef, Haojun Zhang, Matthew S. Wong, Sergio Pinna, Jie Song, Joowon Choi, James S. Speck, Shuji Nakamura, Steven P. DenBaars	2019	52
5	1550-nm InGaAsP multi-quantum-well structures selectively grown on v-groove-patterned SOI substrates Applied Physics Letters ·Ludovico Megalini, Bastien Bonef, Brian C. Cabinian, Hongwei Zhao, Aidan A. Taylor, James S. Speck, John E. Bowers, Jonathan Klamkin	2017	51
6	Efficient Semipolar (11–22) 550 nm Yellow/Green InGaN Light-Emitting Diodes on Low Defect Density (11–22) GaN/Sapphire Templates ACS Applied Materials & Interfaces ·Hongjian Li, Michel Khoury, Bastien Bonef, Abdullah I. Alhassan, Asad J. Mughal, E. Azimah, M.E.A. Samsudin, P. de Mierry, Shuji Nakamura, James S. Speck, Steven P. DenBaars	2017	49
7	Study of efficient semipolar (11-22) InGaN green micro-light-emitting diodes on high-quality (11-22) GaN/sapphire template Optics Express ·Hongjian Li, Matthew S. Wong, Michel Khoury, Bastien Bonef, Haojun Zhang, YiChao Chow, Panpan Li, Jared A. Kearns, Aidan A. Taylor, P. de Mierry, Z. Hassan, Shuji Nakamura, Steven P. DenBaars	2019	46
8	Indium segregation in N-polar InGaN quantum wells evidenced by energy dispersive X-ray spectroscopy and atom probe tomography Applied Physics Letters ·Bastien Bonef, M. Catalano, Cory Lund, Steven P. DenBaars, Shuji Nakamura, Umesh K. Mishra, Moon J. Kim, S. Keller	2017	34
9	Atom probe tomography of nitride semiconductors Scripta Materialia ·Lorenzo Rigutti, Bastien Bonef, James S. Speck, Fengzai Tang, Rachel A. Oliver	2017	31
10	Nanometer scale composition study of MBE grown BGaN performed by atom probe tomography Journal of Applied Physics ·Bastien Bonef, Richard C. Cramer, James S. Speck	2017	26
11	Barriers to carrier transport in multiple quantum well nitride-based c-plane green light emitting diodes Physical Review Materials ·Cheyenne Lynsky, Abdullah I. Alhassan, Guillaume Lheureux, Bastien Bonef, Steven P. DenBaars, Shuji Nakamura, Yuh‐Renn Wu, Claude Weisbuch, James S. Speck	2020	24
12	Dopant radial inhomogeneity in Mg-doped GaN nanowires Nanotechnology ·Alexandra-Madalina Siladie, Lynda Amichi, Nicolas Mollard, Isabelle Mouton, Bastien Bonef, Catherine Bougerol, Adeline Grenier, Éric Robin, Pierre‐Henri Jouneau, N. Garro, A. Cros, B. Daudin	2018	22
13	Fast Diffusion and Segregation along Threading Dislocations in Semiconductor Heterostructures Nano Letters ·Bastien Bonef, Rushabh D. Shah, Kunal Mukherjee	2019	19
14	Compositional accuracy in atom probe tomography analyses performed on III-N light emitting diodes Journal of Applied Physics ·Enrico Di Russo, N. Cherkashin, M. Korytov, A. E. Nikolaev, A. V. Sakharov, A. F. Tsatsul’nikov, Bastien Bonef, Ivan Blum, Jonathan Houard, G. Da Costa, D. Blavette, Lorenzo Rigutti	2019	18
15	Composition Analysis of III-Nitrides at the Nanometer Scale: Comparison of Energy Dispersive X-ray Spectroscopy and Atom Probe Tomography Nanoscale Research Letters ·Bastien Bonef, Miguel López‐Haro, Lynda Amichi, Mark Beeler, Adeline Grenier, Éric Robin, Pierre‐Henri Jouneau, Nicolas Mollard, Isabelle Mouton, Benedikt Haas, E. Monroy, Catherine Bougerol	2016	17
16	Growth of coherent BGaN films using BBr3 gas as a boron source in plasma assisted molecular beam epitaxy Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ·Richard C. Cramer, Bastien Bonef, John H. English, Cyrus E. Dreyer, Chris G. Van de Walle, James S. Speck	2017	17
17	560 nm InGaN micro-LEDs on low-defect-density and scalable (20-21) semipolar GaN on patterned sapphire substrates Optics Express ·Michel Khoury, Hongjian Li, Bastien Bonef, Tom Mates, Feng Wu, Panpan Li, Matthew S. Wong, Haojun Zhang, Jie Song, Joown Choi, James S. Speck, Shuji Nakamura, Steven P. DenBaars	2020	16
18	Atomic arrangement at ZnTe/CdSe interfaces determined by high resolution scanning transmission electron microscopy and atom probe tomography Applied Physics Letters ·Bastien Bonef, Lionel Gérard, Jean‐Luc Rouvière, Adeline Grenier, Pierre‐Henri Jouneau, E. Bellet‐Amalric, Henri Mariette, R. André, Catherine Bougerol	2015	16
19	Semipolar $(20\bar{2}1)$ GaN templates on sapphire: 432 nm InGaN light-emitting diodes and light extraction simulations Applied Physics Express ·Michel Khoury, Hongjian Li, Bastien Bonef, Leah Y. Kuritzky, Asad J. Mughal, Shuji Nakamura, James S. Speck, Steven P. DenBaars	2018	15
20	III-nitride blue light-emitting diodes utilizing hybrid tunnel junction with low excess voltage Semiconductor Science and Technology ·Jianfeng Wang, Erin C. Young, Wan Ying Ho, Bastien Bonef, Tal Margalith, James S. Speck	2020	13

About Bastien Bonef

Bastien Bonef is a scholar working on Condensed Matter Physics, Mechanics of Materials, Biomedical Engineering, Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics, having authored 44 papers that have together received 805 indexed citations. Recurring topics across this work include Semiconductor materials and devices (23 papers), Metal and Thin Film Mechanics (22 papers), GaN-based semiconductor devices and materials (20 papers), Advanced Materials Characterization Techniques (20 papers), Semiconductor Quantum Structures and Devices (10 papers), Diamond and Carbon-based Materials Research (6 papers), Electronic and Structural Properties of Oxides (5 papers) and Ga2O3 and related materials (3 papers). The work is most often cited by research in Condensed Matter Physics (484 citations), Electronic, Optical and Magnetic Materials (264 citations), Atomic and Molecular Physics, and Optics (328 citations), Materials Chemistry (315 citations) and Electrical and Electronic Engineering (342 citations). Bastien Bonef has collaborated with scholars based in United States, France and Taiwan. Frequent co-authors include James S. Speck, Steven P. DenBaars, Shuji Nakamura, Feng Wu, Hongjian Li, Claude Weisbuch, Yuh‐Renn Wu, Akhil Mauze, Patrick Vogt and Panpan Li. Their work appears in journals such as Applied Physics Letters, Microscopy and Microanalysis, Journal of Applied Physics, Optics Express and Semiconductor Science and Technology.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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