Steven A. Ringel

7.5k citations

223 papers · 6.3k indexed · h-index 48

Condensed Matter Physics top 0.5%
- GaN-based semiconductor devices and materials 72
Electronic, Optical and Magnetic Materials top 0.5%
- Ga2O3 and related materials 50
Electrical and Electronic Engineering top 0.5%
- Semiconductor materials and devices 71
- solar cell performance optimization 68
- Chalcogenide Semiconductor Thin Films 48
Atomic and Molecular Physics, and Optics top 1%
- Semiconductor Quantum Structures and Devices 96
- Semiconductor materials and interfaces 40
Renewable Energy, Sustainability and the Environment top 2%
Materials Chemistry
- ZnO doping and properties 38

Co-authors: Aaron R. Arehart James S. Speck Umesh K. Mishra Esmat Farzana Eugene A. Fitzgerald Tyler J. Grassman John A. Carlin Siddharth Rajan
Cited by: Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering
Journals: Applied Physics Letters (43 papers)Journal of Applied Physics (26 papers)IEEE Journal of Photovoltaics (13 papers)
Partner nations: United States Australia India

In The Last Decade

Steven A. Ringel

217 papers receiving 6.1k citations

Peers

Countries citing papers authored by Steven A. Ringel

Since Specialization

Citations

This map shows the geographic impact of Steven A. Ringel's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Steven A. Ringel with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Steven A. Ringel more than expected).

Fields of papers citing papers by Steven A. Ringel

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Steven A. Ringel. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Steven A. Ringel. The network helps show where Steven A. Ringel may publish in the future.

Co-authorship network

The 25 scholars most cited alongside Steven A. Ringel, linked wherever they have co-authored with each other. Click a name or a connecting line to browse the papers they share.

Border = papers with Steven A. Ringel Line = papers co-authored together Steven A. Ringel links everyone, so they are left out of the graph.

All Works

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20 of 20 papers shown

#	Work
1	Electric field-induced carrier recovery and thermal stability of radiation-induced defects in β-Ga2O3 APL Materials ·Hemant Ghadi,F.A Olanipekun,Joe F. McGlone,Lingyu Meng,幸隆杉山,Hongping Zhao,Michael W. McCurdy,Daniel M. Fleetwood,Ronald D. Schrimpf,Steven A. Ringel	2025	0
2	Comprehensive characterization of nitrogen-related defect states in β-Ga2O3 using quantitative optical and thermal defect spectroscopy methods APL Materials ·Hemant Ghadi,Dorling,Joe F. McGlone,Н Н Сизова,Shivam Sharma,Man Hoi Wong,Uttam Singisetti,Steven A. Ringel	2024	2
3	Trap characterization of high-growth-rate laser-assisted MOCVD GaN Applied Physics Letters ·Jayce Morgan,Yuxuan Zhang,Zhaoying Chen,Hongping Zhao,Steven A. Ringel,Aaron R. Arehart	2023	5
4	Identification and characterization of deep nitrogen acceptors in β-Ga2O3 using defect spectroscopies APL Materials ·Hemant Ghadi,Joe F. McGlone,Lingjian Kong,Н Н Сизова,Shivam Sharma,Man Hoi Wong,Uttam Singisetti,Ymir Kalmann Frodason,Hartwin Peelaers,John L. Lyons,Joel B. Varley,Chris G. Van de Walle,Aaron R. Arehart,Steven A. Ringel	2023	13
5	Demonstration of self-aligned β-Ga2O3 δ-doped MOSFETs with current density >550 mA/mm Applied Physics Letters ·Nidhin Kurian Kalarickal,Betina Klint Nielsen,Joe F. McGlone,楚光郑,Mark Brenner,Steven A. Ringel,Siddharth Rajan	2023	9
6	Plasma-assisted deposition and characterization of Al2O3 dielectric layers on (001) β -Ga2O3 Applied Physics Letters ·楚光郑,Betina Klint Nielsen,Nidhin Kurian Kalarickal,Hsien‐Lien Huang,Ahmad E. Islam,Chandan Joishi,Andreas Fiedler,Joe F. McGlone,Steven A. Ringel,Jinwoo Hwang,Siddharth Rajan	2023	4
7	23.4% monolithic epitaxial GaAsP/Si tandem solar cells and quantification of losses from threading dislocations Solar Energy Materials and Solar Cells ·Daniel L. Lepkowski,Tyler J. Grassman,Ikuo Tofukuji,E. Bevington,Robersy Sanchez,Mattias K. Juhl,Anastasia Soeriyadi,Анна Герца,Hamid Mehrvarz,Udo Römer,Anita Ho‐Baillie,W. Chodyniecki,Daniel Derkacs,MO Song-hai,S Parot,Stephen Bremner,Steven A. Ringel	2021	19
8	Probing unintentional Fe impurity incorporation in MOCVD homoepitaxy GaN: Toward GaN vertical power devices Journal of Applied Physics ·Yuxuan Zhang,Zhaoying Chen,Jayce Morgan,Nerivaldo dos Reis Santos,Md Rezaul Karim,Aaron R. Arehart,Steven A. Ringel,Siddharth Rajan,Hongping Zhao	2020	31
9	Evaluation of Low-Temperature Saturation Velocity in <inline-formula> <tex-math notation="LaTeX">$\beta$ </tex-math> </inline-formula>-(Al_xGa_1–x)₂O₃/Ga₂O₃ Modulation-Doped Field-Effect Transistors IEEE Transactions on Electron Devices ·Yuewei Zhang,Zhanbo Xia,Joe F. McGlone,Siddhartha Sankar Baruah,Chandan Joishi,Aaron R. Arehart,Steven A. Ringel,Siddharth Rajan	2019	71
10	Local trap spectroscopy on cross-sectioned AlGaN/GaN devices with in situ biasing Applied Physics Letters ·Munirah Lopes da Cruz,Corrò BE,Jeff L. Brown,NN Ndenecho,Steven A. Ringel,Aaron R. Arehart,Eric R. Heller,Donald L. Dorsey,J. P. Pelz	2019	2
11	$\beta$ -Ga₂O₃ Delta-Doped Field-Effect Transistors With Current Gain Cutoff Frequency of 27 GHz IEEE Electron Device Letters ·Zhanbo Xia,Hao Xue,Chandan Joishi,Joe F. McGlone,Nidhin Kurian Kalarickal,Shahadat H. Sohel,Mark Brenner,Aaron R. Arehart,Steven A. Ringel,Saurabh Lodha,Wu Lu,Siddharth Rajan	2019	125
12	Investigation of Trap-Induced Threshold Voltage Instability in GaN-on-Si MISHEMTs IEEE Transactions on Electron Devices ·Siddhartha Sankar Baruah,Jungwoo Joh,S. Krishnan,S. Pendharkar,Christine M. Jackson,Steven A. Ringel,Aaron R. Arehart	2019	15
13	Deep level defects in Ge-doped (010) β-Ga2O3 layers grown by plasma-assisted molecular beam epitaxy Journal of Applied Physics ·Esmat Farzana,Elaheh Ahmadi,James S. Speck,Aaron R. Arehart,Steven A. Ringel	2018	108
14	Effect of buffer iron doping on delta-doped β-Ga2O3 metal semiconductor field effect transistors Applied Physics Letters ·Chandan Joishi,Zhanbo Xia,Joe F. McGlone,Yuewei Zhang,Aaron R. Arehart,Steven A. Ringel,Saurabh Lodha,Siddharth Rajan	2018	50
15	Impact of deep level defects induced by high energy neutron radiation in β-Ga2O3 APL Materials ·Esmat Farzana,Syed Musthafa A.,Thomas E. Blue,Aaron R. Arehart,Steven A. Ringel	2018	105
16	Trapping Effects in Si -Doped -Ga₂O₃ MESFETs on an Fe-Doped -Ga₂O₃ Substrate IEEE Electron Device Letters ·Joe F. McGlone,Zhanbo Xia,Yuewei Zhang,Chandan Joishi,Saurabh Lodha,Siddharth Rajan,Steven A. Ringel,Aaron R. Arehart	2018	88
17	Influence of metal choice on (010) β-Ga2O3 Schottky diode properties Applied Physics Letters ·Esmat Farzana,Zeng Zhang,Pran K. Paul,Aaron R. Arehart,Steven A. Ringel	2017	172
18	Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy Applied Physics Letters ·Z. Zhang,Esmat Farzana,Aaron R. Arehart,Steven A. Ringel	2016	250
19	Electrical and structural characterizations of crystallized Al2O3/GaN interfaces formed by in situ metalorganic chemical vapor deposition Journal of Applied Physics ·Xia-Ji Liu,Christine M. Jackson,Feng Wu,B. Mazumder,Ramya Yeluri,Hideto Motohashi,S. Keller,Aaron R. Arehart,Steven A. Ringel,James S. Speck,Umesh K. Mishra	2016	12
20	Range of defect morphologies on GaAs grown on offcut (001) Ge substrates Journal of Electronic Materials ·S. M. Ting,Eugene A. Fitzgerald,R. M. Sieg,Steven A. Ringel	1998	18

About Steven A. Ringel

Steven A. Ringel is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials and Structural Biology, having authored 223 papers that have together received 6.3k indexed citations. Recurring topics across this work include Semiconductor Quantum Structures and Devices (96 papers), GaN-based semiconductor devices and materials (72 papers), Semiconductor materials and devices (71 papers), solar cell performance optimization (68 papers), Ga2O3 and related materials (50 papers), Chalcogenide Semiconductor Thin Films (48 papers), Semiconductor materials and interfaces (40 papers) and ZnO doping and properties (38 papers). The work is most often cited by research in Condensed Matter Physics (2.3k citations), Electronic, Optical and Magnetic Materials (2.6k citations), Electrical and Electronic Engineering (4.1k citations), Atomic and Molecular Physics, and Optics (2.2k citations) and Renewable Energy, Sustainability and the Environment (919 citations). Steven A. Ringel has collaborated with scholars based in United States, Australia and India. Frequent co-authors include Aaron R. Arehart, James S. Speck, Umesh K. Mishra, Esmat Farzana, Eugene A. Fitzgerald, Tyler J. Grassman, John A. Carlin, Siddharth Rajan, Steven P. DenBaars and Joe F. McGlone. Their work appears in journals such as Applied Physics Letters, Journal of Applied Physics, IEEE Journal of Photovoltaics, IEEE Electron Device Letters and APL Materials.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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