M. Stutzmann

34.7k total citations · 7 hit papers
676 papers, 28.6k citations indexed

About

M. Stutzmann is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Condensed Matter Physics. According to data from OpenAlex, M. Stutzmann has authored 676 papers receiving a total of 28.6k indexed citations (citations by other indexed papers that have themselves been cited), including 421 papers in Materials Chemistry, 408 papers in Electrical and Electronic Engineering and 211 papers in Condensed Matter Physics. Recurrent topics in M. Stutzmann's work include GaN-based semiconductor devices and materials (208 papers), Silicon Nanostructures and Photoluminescence (196 papers) and Thin-Film Transistor Technologies (171 papers). M. Stutzmann is often cited by papers focused on GaN-based semiconductor devices and materials (208 papers), Silicon Nanostructures and Photoluminescence (196 papers) and Thin-Film Transistor Technologies (171 papers). M. Stutzmann collaborates with scholars based in Germany, United States and Spain. M. Stutzmann's co-authors include O. Ambacher, Martin S. Brandt, R. Dimitrov, José A. Garrido, Martin Eickhoff, L.F. Eastman, C. C. Tsai, W. B. Jackson, W. J. Schaff and Michael J. Murphy and has published in prestigious journals such as Journal of the American Chemical Society, Physical Review Letters and Advanced Materials.

In The Last Decade

M. Stutzmann

666 papers receiving 27.7k citations

Hit Papers

5 papers align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

1999 2.3k citations O. Ambacher, M. Stutzmann et al. Journal of Applied Physics profile →
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures

2000 1.3k citations O. Ambacher, M. Stutzmann et al. Journal of Applied Physics profile →
Light-induced metastable defects in hydrogenated amorphous silicon: A systematic study

1985 980 citations M. Stutzmann et al. profile →
Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures

2002 821 citations O. Ambacher, Martin Hermann et al. profile →
The origin of visible luminescencefrom “porous silicon”: A new interpretation

1992 732 citations Martin S. Brandt, M. Stutzmann et al. profile →
Optical constants of epitaxial AlGaN films and their temperature dependence

1997 512 citations O. Ambacher, M. Stutzmann et al. Journal of Applied Physics profile →
Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry

1998 483 citations O. Ambacher, M. Stutzmann et al. profile →

Peers

Countries citing papers authored by M. Stutzmann

Since Specialization

Citations

This map shows the geographic impact of M. Stutzmann's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by M. Stutzmann with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites M. Stutzmann more than expected).

Fields of papers citing papers by M. Stutzmann

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by M. Stutzmann. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by M. Stutzmann. The network helps show where M. Stutzmann may publish in the future.

Co-authorship network of co-authors of M. Stutzmann

This figure shows the co-authorship network connecting the top 25 collaborators of M. Stutzmann. A scholar is included among the top collaborators of M. Stutzmann based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with M. Stutzmann. M. Stutzmann is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

Sort: Min cites: Since: Top N: Style:

20 of 20 papers shown

#	Work	Indexed citations
1	Conversion of a 3D printer for versatile automation of dip coating processes 2023 ·Review of Scientific Instruments ·(unknown), (unknown), Ian D. Sharp, M. Stutzmann	6
2	Environmental sensitivity of GaN nanofins grown by selective area molecular beam epitaxy 2023 ·Nanotechnology ·(unknown), (unknown), (unknown), (unknown), (unknown), M. Stutzmann	1
3	Spatially‐Modulated Silicon Interface Energetics Via Hydrogen Plasma‐Assisted Atomic Layer Deposition of Ultrathin Alumina 2022 ·Advanced Materials Interfaces ·Alex Henning, (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), Johanna Eichhorn, Patrick Zeller, Matteo Amati, Luca Gregoratti, Jonathan J. Finley, Bernhard Rieger, M. Stutzmann, Ian D. Sharp	4
4	The Physics of Renewable Energy 2022 ·M. Stutzmann, (unknown)	4
5	Crystal side facet-tuning of GaN nanowires and nanofins grown by molecular beam epitaxy 2022 ·Journal of Applied Physics ·(unknown), (unknown), (unknown), (unknown), (unknown), (unknown), (unknown), M. Stutzmann	10
6	Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substrates 2021 ·Nanoscale Advances ·(unknown), (unknown), (unknown), (unknown), (unknown), (unknown), M. Stutzmann	9
7	Charge transfer doping in functionalized silicon nanosheets/P3HT hybrid material for applications in electrolyte-gated field-effect transistors 2018 ·Journal of Materials Chemistry C ·(unknown), (unknown), (unknown), M. Stutzmann, Martin S. Brandt, Markus Becherer, Paolo Lugli, Bernhard Rieger	11
8	Silicon Nanocrystal Superlattice Nucleation and Growth 2017 ·Langmuir ·(unknown), Yixuan Yu, (unknown), (unknown), Camila A. Saez Cabezas, (unknown), (unknown), Detlef‐M. Smilgies, Rui N. Pereira, M. Stutzmann, Brian A. Korgel	8
9	Silicon‐based nanocomposites for thermoelectric application 2016 ·physica status solidi (a) ·Gabi Schierning, (unknown), (unknown), (unknown), (unknown), Roland Schmechel, (unknown), Nils Petermann, Hartmut Wiggers, (unknown), Dietrich E. Wolf, (unknown), (unknown), M. Stutzmann, Martin S. Brandt	18
10	Hydrophobic Interaction and Charge Accumulation at the Diamond-Electrolyte Interface 2011 ·Physical Review Letters ·Markus Dankerl, (unknown), Stefan Birner, (unknown), M. Stutzmann, José A. Garrido	28
11	Combined TPRx, in situ GISAXS and GIXAS studies of model semiconductor-supported platinum catalysts in the hydrogenation of ethene 2010 ·Physical Chemistry Chemical Physics ·(unknown), (unknown), Sungsik Lee, Byeongdu Lee, Marcel Di Vece, Xuebing Li, Sönke Seifert, Randall E. Winans, M. Stutzmann, Johannes A. Lercher, Štefan Vajda	36
12	Photocatalytic Cleavage of Self‐Assembled Organic Monolayers by UV‐Induced Charge Transfer from GaN Substrates 2010 ·Advanced Materials ·(unknown), (unknown), (unknown), (unknown), Barbara Baur, (unknown), Bert Nickel, Ian D. Sharp, M. Stutzmann, Martin Eickhoff	30
13	Triple-twin domains in Mg doped GaN wurtzite nanowires: structural and electronic properties of this zinc-blende-like stacking 2009 ·Nanotechnology ·Jordi Arbiol, Sònia Estradé, Joan Daniel Prades, A. Cirera, Florian Furtmayr, (unknown), Andreas Läufer, M. Stutzmann, Martin Eickhoff, Mhairi Gass, Andrew Bleloch, F. Peiró, J.R. Morante	78
14	Light-Induced Dielectrophoretic Manipulation of DNA 2007 ·Biophysical Journal ·(unknown), Joachim O. Rädler, Stefan Klein, M. Stutzmann, Martin S. Brandt	60
15	Preface: phys. stat. sol. (a) 202/12 2005 ·physica status solidi (a) ·Wolfgang Neumann, M. Stutzmann, Stefan Hildebrandt	1
16	Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures – Part B: Sensor applications 2003 ·Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics ·Martin Eickhoff, J. Schalwig, Gustav Steinhoff, (unknown), L. Görgens, R. Neuberger, Martin Hermann, Barbara Baur, Gerhard Müller, O. Ambacher, M. Stutzmann	111
17	Group III-nitrides and their heterostructures : growth, characterization and applications 2003 ·Wiley-VCH eBooks ·F. Bechstedt, Bertrand Meyer, M. Stutzmann	2
18	Space charge spectroscopy of diamond 2001 ·Diamond and Related Materials ·Christoph E. Nebel, R. Zeisel, M. Stutzmann	5
19	Large Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy and Laser-Induced Liftoff 1999 ·Japanese Journal of Applied Physics ·Michael K. Kelly, R. P. Vaudo, V. M. Phanse, L. Görgens, (unknown), M. Stutzmann	257
20	Hydrogen in semiconductors: bulk and surface properties : proceedings of the Sixth Trieste IUPAP-ICTP Semiconductor Symposium International Centre for Theoretical Physics, Trieste, Italy, 27-31 August 1990 1991 ·North-Holland eBooks ·M. Stutzmann, Julien Chevallier	5

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

Explore authors with similar magnitude of impact