Masayuki Senoh

21.0k total citations · 21 hit papers
44 papers, 17.2k citations indexed

About

Masayuki Senoh is a scholar working on Condensed Matter Physics, Atomic and Molecular Physics, and Optics and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Masayuki Senoh has authored 44 papers receiving a total of 17.2k indexed citations (citations by other indexed papers that have themselves been cited), including 44 papers in Condensed Matter Physics, 31 papers in Atomic and Molecular Physics, and Optics and 17 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Masayuki Senoh's work include GaN-based semiconductor devices and materials (44 papers), Semiconductor Quantum Structures and Devices (31 papers) and Ga2O3 and related materials (17 papers). Masayuki Senoh is often cited by papers focused on GaN-based semiconductor devices and materials (44 papers), Semiconductor Quantum Structures and Devices (31 papers) and Ga2O3 and related materials (17 papers). Masayuki Senoh collaborates with scholars based in Japan. Masayuki Senoh's co-authors include Shuji Nakamura, Takashi Mukai, Naruhito Iwasa, Shin‐ichi Nagahama, Takao Yamada, Toshio Matsushita, Yasunobu Sugimoto, Hiroyuki Kiyoku, Tokuya Kozaki and Hitoshi Umemoto and has published in prestigious journals such as Applied Physics Letters, Journal of Applied Physics and Journal of Physics Condensed Matter.

In The Last Decade

Masayuki Senoh

44 papers receiving 16.5k citations

Hit Papers

5 papers align trajectories

What are hit papers?

Hit papers significantly outperform the citation benchmark for their cohort. A paper qualifies if it has ≥500 total citations, achieves ≥1.5× the top-1% citation threshold for papers in the same subfield and year (this is the minimum needed to enter the top 1%, not the average within it), or reaches the top citation threshold in at least one of its specific research topics.

Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes

1994 3.1k citations Shuji Nakamura, Takashi Mukai et al. Applied Physics Letters profile →
InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

1996 2.1k citations Shuji Nakamura, Masayuki Senoh et al. Japanese Journal of Applied Physics profile →
High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

1995 1.2k citations Shuji Nakamura, Masayuki Senoh et al. Japanese Journal of Applied Physics profile →
Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes

1995 896 citations Shuji Nakamura, Masayuki Senoh et al. Japanese Journal of Applied Physics profile →
Thermal Annealing Effects on P-Type Mg-Doped GaN Films

1992 893 citations Shuji Nakamura, Takashi Mukai et al. Japanese Journal of Applied Physics profile →
Hole Compensation Mechanism of P-Type GaN Films

1992 876 citations Shuji Nakamura, Naruhito Iwasa et al. Japanese Journal of Applied Physics profile →
High-Power GaN P-N Junction Blue-Light-Emitting Diodes

1991 662 citations Shuji Nakamura, Takashi Mukai et al. Japanese Journal of Applied Physics profile →
InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate

1998 609 citations Shuji Nakamura, Masayuki Senoh et al. Applied Physics Letters profile →
High-power InGaN/GaN double-heterostructure violet light emitting diodes

1993 548 citations Shuji Nakamura, Masayuki Senoh et al. Applied Physics Letters profile →
High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes

1995 493 citations Shuji Nakamura, Masayuki Senoh et al. Applied Physics Letters profile →
P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes

1993 465 citations Shuji Nakamura, Masayuki Senoh et al. Japanese Journal of Applied Physics profile →
Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes

1996 436 citations Shuji Nakamura, Masayuki Senoh et al. Applied Physics Letters profile →
InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices

1997 387 citations Shuji Nakamura, Masayuki Senoh et al. Japanese Journal of Applied Physics profile →
High-brightness InGaN/AlGaN double-heterostructure blue-green-light-emitting diodes

1994 356 citations Shuji Nakamura, Takashi Mukai et al. profile →
Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers

1991 332 citations Shuji Nakamura, Masayuki Senoh et al. Japanese Journal of Applied Physics profile →
Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates

1998 290 citations Shuji Nakamura, Masayuki Senoh et al. Applied Physics Letters profile →
Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours

1997 286 citations Shuji Nakamura, Masayuki Senoh et al. Applied Physics Letters profile →
InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets

1996 267 citations Shuji Nakamura, Masayuki Senoh et al. Japanese Journal of Applied Physics profile →
Blue InGaN-based laser diodes with an emission wavelength of 450 nm

2000 229 citations Shuji Nakamura, Masayuki Senoh et al. Applied Physics Letters profile →
High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates

1998 218 citations Shuji Nakamura, Masayuki Senoh et al. Japanese Journal of Applied Physics profile →
InGaN multi-quantum-well structure laser diodes grown on MgAl2O4 substrates

1996 216 citations Shuji Nakamura, Masayuki Senoh et al. Applied Physics Letters profile →

Peers

Countries citing papers authored by Masayuki Senoh

Since Specialization

Citations

This map shows the geographic impact of Masayuki Senoh's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Masayuki Senoh with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Masayuki Senoh more than expected).

Fields of papers citing papers by Masayuki Senoh

Since Specialization

Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Masayuki Senoh. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Masayuki Senoh. The network helps show where Masayuki Senoh may publish in the future.

Co-authorship network of co-authors of Masayuki Senoh

This figure shows the co-authorship network connecting the top 25 collaborators of Masayuki Senoh. A scholar is included among the top collaborators of Masayuki Senoh based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Masayuki Senoh. Masayuki Senoh is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

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20 of 20 papers shown

#	Work	Indexed citations
1	GaN-Based Light-Emitting Diodes and Laser Diodes, and Their Recent Progress 2001 ·physica status solidi (a) ·Shin‐ichi Nagahama, Naruhito Iwasa, Masayuki Senoh, Toshio Matsushita, Yasunobu Sugimoto, Hiroyuki Kiyoku, Tokuya Kozaki, Makoto Sano, Hiroaki Matsumura, Hitoshi Umemoto, Kazuyuki Chocho, Tomoya Yanamoto, Takashi Mukai	24
2	High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates 2000 ·Japanese Journal of Applied Physics ·Shin‐ichi Nagahama, Naruhito Iwasa, Masayuki Senoh, Toshio Matsushita, Yasunobu Sugimoto, Hiroyuki Kiyoku, Tokuya Kozaki, Masahiko Sano, Hiroaki Matsumura, Hitoshi Umemoto, Kazuyuki Chocho, Takashi Mukai	194
3	Violet InGaN/GaN/AlGaN-Based Laser Diodes Operable at 50°C with a Fundamental Transverse Mode 1999 ·Japanese Journal of Applied Physics ·Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama, Toshio Matsushita, Hiroyuki Kiyoku, Yasunobu Sugimoto, Tokuya Kozaki, Hitoshi Umemoto, Masahiko Sano, Takashi Mukai	132
4	High-Power InGaN-Based Violet Laser Diodes with a Fundamental Transverse Mode 1999 ·Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama, Toshio Matsushita, Takashi Mukai	1
5	Violet InGaN/GaN/AlGaN-Based Laser Diodes with an Output Power of 420 mW 1998 ·Japanese Journal of Applied Physics ·Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama, Naruhito Iwasa, Takao Yamada, Toshio Matsushita, Hiroyuki Kiyoku, Yasunobu Sugimoto, Tokuya Kozaki, Hitoshi Umemoto, Masahiko Sano, Kazuyuki Chocho	63
6	Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates breakdown → 1998 ·Applied Physics Letters ·Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama, Naruhito Iwasa, Takao Yamada, Toshio Matsushita, Hiroyuki Kiyoku, Yasunobu Sugimoto, Tokuya Kozaki, Hitoshi Umemoto, Masahiko Sano, Kazuyuki Chocho	290
7	High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates breakdown → 1998 ·Japanese Journal of Applied Physics ·Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama, Naruhito Iwasa, Takao Yamada, Toshio Matsushita, Hiroyuki Kiyoku, Yasunobu Sugimoto, Tokuya Kozaki, Hitoshi Umemoto, Masahiko Sano, Kazuyuki Chocho	218
8	Longitudinal mode spectra and ultrashort pulse generation of InGaN multiquantum well structure laser diodes 1997 ·Applied Physics Letters ·Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama, Naruhito Iwasa, Takao Yamada, Toshio Matsushita, Yasunobu Sugimoto, Hiroyuki Kiyoku	40
9	InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices breakdown → 1997 ·Japanese Journal of Applied Physics ·Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama, Naruhito Iwasa, Takao Yamada, Toshio Matsushita, Hiroyuki Kiyoku, Yasunobu Sugimoto, Tokuya Kozaki, Hitoshi Umemoto, Masahiko Sano, Kazuyuki Chocho	387
10	Optical gain and carrier lifetime of InGaN multi-quantum well structure laser diodes 1996 ·Applied Physics Letters ·Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama, Naruhito Iwasa, Takao Yamada, Toshio Matsushita, Yasunobu Sugimoto, Hiroyuki Kiyoku	92
11	InGaN multi-quantum-well structure laser diodes grown on MgAl2O4 substrates breakdown → 1996 ·Applied Physics Letters ·Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama, Naruhito Iwasa, Takao Yamada, Toshio Matsushita, Hiroyuki Kiyoku, Yasunobu Sugimoto	216
12	Ridge-geometry InGaN multi-quantum-well-structure laser diodes 1996 ·Applied Physics Letters ·Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama, Naruhito Iwasa, Takao Yamada, Toshio Matsushita, Yasunobu Sugimoto, Hiroyuki Kiyoku	144
13	InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets breakdown → 1996 ·Japanese Journal of Applied Physics ·Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama, Naruhito Iwasa, Takao Yamada, Toshio Matsushita, Hiroyuki Kiyoku, Yasunobu Sugimoto	267
14	High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures breakdown → 1995 ·Japanese Journal of Applied Physics ·Shuji Nakamura, Masayuki Senoh, Naruhito Iwasa, Shin‐ichi Nagahama	1244
15	Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes breakdown → 1994 ·Applied Physics Letters ·Shuji Nakamura, Takashi Mukai, Masayuki Senoh	3125
16	High-power InGaN/GaN double-heterostructure violet light emitting diodes breakdown → 1993 ·Applied Physics Letters ·Shuji Nakamura, Masayuki Senoh, Takashi Mukai	548
17	P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes breakdown → 1993 ·Japanese Journal of Applied Physics ·Shuji Nakamura, Masayuki Senoh, Takashi Mukai	465
18	Si- and Ge-Doped GaN Films Grown with GaN Buffer Layers 1992 ·Japanese Journal of Applied Physics ·Shuji Nakamura, Takashi Mukai, Masayuki Senoh	176
19	Hole Compensation Mechanism of P-Type GaN Films breakdown → 1992 ·Japanese Journal of Applied Physics ·Shuji Nakamura, Naruhito Iwasa, Masayuki Senoh, Takashi Mukai	876
20	Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers breakdown → 1991 ·Japanese Journal of Applied Physics ·Shuji Nakamura, Masayuki Senoh, Takashi Mukai	332

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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